This application claims benefit of U.S. Provisional Patent Application Ser. No. 60/337,076, entitled “Apparatus and Method For Fast-Cycle Atomic Layer Deposition,” filed Dec. 6, 2001, which is herein incorporated by reference.
Number | Name | Date | Kind |
---|---|---|---|
4058430 | Suntola et al. | Nov 1977 | A |
4389973 | Suntola et al. | Jun 1983 | A |
4413022 | Suntola et al. | Nov 1983 | A |
4486487 | Skarp | Dec 1984 | A |
4834831 | Nishizawa et al. | May 1989 | A |
4993357 | Scholz | Feb 1991 | A |
5225366 | Yoder | Jul 1993 | A |
5281274 | Yoder | Jan 1994 | A |
5294286 | Nishizawa et al. | Mar 1994 | A |
5306666 | Izumi | Apr 1994 | A |
5374570 | Nasu et al. | Dec 1994 | A |
5441703 | Jurgensen | Aug 1995 | A |
5443647 | Aucoin et al. | Aug 1995 | A |
5443657 | Rivenburg et al. | Aug 1995 | A |
5480818 | Matsumoto et al. | Jan 1996 | A |
5483919 | Yokoyama et al. | Jan 1996 | A |
5503875 | Imai et al. | Apr 1996 | A |
5674786 | Turner et al. | Oct 1997 | A |
5711811 | Suntola et al. | Jan 1998 | A |
5796116 | Nakata et al. | Aug 1998 | A |
5807792 | Ilg et al. | Sep 1998 | A |
5835677 | Li et al. | Nov 1998 | A |
5855680 | Soininen et al. | Jan 1999 | A |
5879459 | Gadgil et al. | Mar 1999 | A |
5916365 | Sherman | Jun 1999 | A |
5923056 | Lee et al. | Jul 1999 | A |
6015590 | Suntola et al. | Jan 2000 | A |
6015917 | Bhandari et al. | Jan 2000 | A |
6042652 | Hyun et al. | Mar 2000 | A |
6043177 | Falconer et al. | Mar 2000 | A |
6084302 | Sandhu | Jul 2000 | A |
6124158 | Dautartas et al. | Sep 2000 | A |
6139700 | Kang et al. | Oct 2000 | A |
6143659 | Leem | Nov 2000 | A |
6144060 | Park et al. | Nov 2000 | A |
6174377 | Doering et al. | Jan 2001 | B1 |
6174809 | Kang et al. | Jan 2001 | B1 |
6183563 | Choi et al. | Feb 2001 | B1 |
6200893 | Sneh | Mar 2001 | B1 |
6203613 | Gates et al. | Mar 2001 | B1 |
6207302 | Sugiura et al. | Mar 2001 | B1 |
6207487 | Kim et al. | Mar 2001 | B1 |
6231672 | Choi et al. | May 2001 | B1 |
6270572 | Kim et al. | Aug 2001 | B1 |
6284646 | Leem | Sep 2001 | B1 |
6287965 | Kang et al. | Sep 2001 | B1 |
6305314 | Sneh et al. | Oct 2001 | B1 |
6306216 | Kim et al. | Oct 2001 | B1 |
6335240 | Kim et al. | Jan 2002 | B1 |
6342277 | Sherman | Jan 2002 | B1 |
6348376 | Lim et al. | Feb 2002 | B2 |
6358829 | Yoon et al. | Mar 2002 | B2 |
6372598 | Kang et al. | Apr 2002 | B2 |
6379748 | Bhandari et al. | Apr 2002 | B1 |
6391785 | Satta et al. | May 2002 | B1 |
6399491 | Jeon et al. | Jun 2002 | B2 |
6416577 | Suntoloa et al. | Jul 2002 | B1 |
6416822 | Chiang et al. | Jul 2002 | B1 |
6428859 | Chiang et al. | Aug 2002 | B1 |
6447607 | Soininen et al. | Sep 2002 | B2 |
6451119 | Sneh et al. | Sep 2002 | B2 |
6451695 | Sneh | Sep 2002 | B2 |
6468924 | Lee et al. | Oct 2002 | B2 |
6475276 | Elers et al. | Nov 2002 | B1 |
6475910 | Sneh | Nov 2002 | B1 |
6478872 | Chae et al. | Nov 2002 | B1 |
6481945 | Hasper et al. | Nov 2002 | B1 |
6482262 | Elers et al. | Nov 2002 | B1 |
6482733 | Raaijmakers et al. | Nov 2002 | B2 |
6489214 | Kim et al. | Dec 2002 | B2 |
6511539 | Raaijmakers | Jan 2003 | B1 |
6534395 | Werkhoven et al. | Mar 2003 | B2 |
6551406 | Kilpi | Apr 2003 | B2 |
20010000866 | Sneh et al. | May 2001 | A1 |
20010002280 | Sneh | May 2001 | A1 |
20010009140 | Bondestam et al. | Jul 2001 | A1 |
20010009695 | Saanila et al. | Jul 2001 | A1 |
20010011526 | Doering et al. | Aug 2001 | A1 |
20010013312 | Soininen et al. | Aug 2001 | A1 |
20010014371 | Kilpi | Aug 2001 | A1 |
20010024387 | Raaijmakers et al. | Sep 2001 | A1 |
20010025979 | Kim et al. | Oct 2001 | A1 |
20010028924 | Sherman | Oct 2001 | A1 |
20010034123 | Jeon et al. | Oct 2001 | A1 |
20010041250 | Werkhoven et al. | Nov 2001 | A1 |
20010042523 | Kesala | Nov 2001 | A1 |
20010054377 | Lindfors et al. | Dec 2001 | A1 |
20010054730 | Kim et al. | Dec 2001 | A1 |
20010054769 | Raaijmakers et al. | Dec 2001 | A1 |
20020000196 | Park | Jan 2002 | A1 |
20020000598 | Kang et al. | Jan 2002 | A1 |
20020007790 | Park | Jan 2002 | A1 |
20020020869 | Park et al. | Feb 2002 | A1 |
20020021544 | Cho et al. | Feb 2002 | A1 |
20020031618 | Sherman | Mar 2002 | A1 |
20020041931 | Suntola et al. | Apr 2002 | A1 |
20020048635 | Kim et al. | Apr 2002 | A1 |
20020052097 | Park | May 2002 | A1 |
20020066411 | Chiang et al. | Jun 2002 | A1 |
20020068458 | Chaing et al. | Jun 2002 | A1 |
20020073924 | Chiang et al. | Jun 2002 | A1 |
20020074588 | Lee | Jun 2002 | A1 |
20020076481 | Chiang et al. | Jun 2002 | A1 |
20020076507 | Chiang et al. | Jun 2002 | A1 |
20020076837 | Hujanen et al. | Jun 2002 | A1 |
20020079508 | Chiang et al. | Jun 2002 | A1 |
20020081844 | Jeon et al. | Jun 2002 | A1 |
20020086106 | Park et al. | Jul 2002 | A1 |
20020092471 | Kang et al. | Jul 2002 | A1 |
20020094689 | Park | Jul 2002 | A1 |
20020098627 | Pomerede et al. | Jul 2002 | A1 |
20020104481 | Chiang et al. | Aug 2002 | A1 |
20020106451 | Skarp et al. | Aug 2002 | A1 |
20020106536 | Lee et al. | Aug 2002 | A1 |
20020108570 | Lindfors | Aug 2002 | A1 |
20020115252 | Haukka et al. | Aug 2002 | A1 |
20020134307 | Choi | Sep 2002 | A1 |
20020144655 | Chiang et al. | Oct 2002 | A1 |
20020144657 | Chiang et al. | Oct 2002 | A1 |
20020146511 | Chiang et al. | Oct 2002 | A1 |
20020155722 | Satta et al. | Oct 2002 | A1 |
20020162506 | Sneh et al. | Nov 2002 | A1 |
20020164421 | Chaing et al. | Nov 2002 | A1 |
20020164423 | Chiang et al. | Nov 2002 | A1 |
20020173130 | Pomerede et al. | Nov 2002 | A1 |
20020177282 | Song | Nov 2002 | A1 |
20020182320 | Leskela et al. | Dec 2002 | A1 |
20020187256 | Elers et al. | Dec 2002 | A1 |
20020187631 | Kim et al. | Dec 2002 | A1 |
20020196591 | Hujanen et al. | Dec 2002 | A1 |
20020197402 | Chiang et al. | Dec 2002 | A1 |
20030004723 | Chihara | Jan 2003 | A1 |
20030013320 | Kim et al. | Jan 2003 | A1 |
20030015764 | Raaijmakers et al. | Jan 2003 | A1 |
20030031807 | Elers et al. | Feb 2003 | A1 |
20030032281 | Werkhoven et al. | Feb 2003 | A1 |
20030042630 | Babcoke et al. | Mar 2003 | A1 |
20030049942 | Haukka et al. | Mar 2003 | A1 |
20030072975 | Shero et al. | Apr 2003 | A1 |
20030075273 | Kilpela et al. | Apr 2003 | A1 |
20030075925 | Lindfors et al. | Apr 2003 | A1 |
20030082296 | Elers et al. | May 2003 | A1 |
Number | Date | Country |
---|---|---|
1167569 | Jan 2002 | EP |
2355727 | May 2001 | GB |
10-82671 | Mar 1989 | JP |
2-014513 | Jan 1990 | JP |
2-230690 | Sep 1990 | JP |
2-246161 | Sep 1990 | JP |
3-234025 | Oct 1991 | JP |
4-291916 | Sep 1992 | JP |
5-029228 | Feb 1993 | JP |
5-047666 | Feb 1993 | JP |
5-074724 | Mar 1993 | JP |
5-206036 | Aug 1993 | JP |
5-234899 | Sep 1993 | JP |
5-270997 | Oct 1993 | JP |
6-224138 | May 1994 | JP |
6-177381 | Jun 1994 | JP |
6-230421 | Aug 1994 | JP |
7-286269 | Mar 1999 | JP |
11-269652 | Oct 1999 | JP |
2000-031387 | Jan 2000 | JP |
2000-058777 | Feb 2000 | JP |
2000-319772 | Mar 2000 | JP |
2001-020075 | Nov 2000 | JP |
10-308283 | Mar 2001 | JP |
2001-111000 | Apr 2001 | JP |
2001-1172767 | Jun 2001 | JP |
2001-220294 | Aug 2001 | JP |
2001-328900 | Nov 2001 | JP |
9617107 | Jun 1996 | WO |
9901595 | Jan 1999 | WO |
9929924 | Jun 1999 | WO |
9965064 | Dec 1999 | WO |
0016377 | Mar 2000 | WO |
0245167 | Jun 2000 | WO |
0054320 | Sep 2000 | WO |
0079576 | Dec 2000 | WO |
0208485 | Jan 2001 | WO |
0115220 | Mar 2001 | WO |
0117692 | Mar 2001 | WO |
0127346 | Apr 2001 | WO |
0127347 | Apr 2001 | WO |
0129280 | Apr 2001 | WO |
0129891 | Apr 2001 | WO |
0129893 | Apr 2001 | WO |
0136702 | May 2001 | WO |
0166832 | Sep 2001 | WO |
0208488 | Jan 2002 | WO |
0231875 | Apr 2002 | WO |
0243115 | May 2002 | WO |
02065525 | Aug 2002 | WO |
02067319 | Aug 2002 | WO |
Entry |
---|
Rossnagel, et al., “Plasma-enhanced Atomic Layer Deposition of Ta and Ti for Internconnect Diffusion Barriers,” J. Vac. Sci. Technol. B., vol. 18, No. 4 (Jul. 2000); p2016-20. |
Ritala, M., et al., “Chemical Vapor Deposition,” Jan. 1999, p. 6-9. |
Ritala, et al. “Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition,” Chem. Vap. Deposition 1999, 5, No. 1. |
Ritala, et al. “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources,” Science vol. 288 Apr. 14, 2000. |
Paranjpe, et al. “Atomic Layer Deposition of AlO3 for Thin Film Head Gap Applications,” J. Elec. Soc., vol. 148, No. 9 Sept., 2001 pp. G465-471. |
Niinisto, et al. “Synthesis of Oxide Thin Films and Overlayers by Atomic Layer Epitaxy for Advanced Applications,” Materials Science and Engineering B41 (1996) 23-29. |
Kukli, et al., “Tailoring the Dielectric Properties of HfO2-Ta2-O5 Nanolaminates,” Applied Physics Letters, vol. 68, No. 26, Jun. 24, 1996; p. 3737-9. |
Kukli, et al., “Properties of Ta2O5-Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy,” Journal of the Electrochemical Society, vol. 144, No. 1, Jan. 1997; p. 300-6. |
Kukli, et al., “Properties of {Nb1-xTax}2O5 Solid Solutions and {Nb1-xTax}2O5-ZrO2 Nanolaminates Gorwn by Atomic Layer Epitaxy,” 1997; p. 785-93. |
Kukli, et al., “In situ Study of Atomic Layer Epitaxy Growth of Tantalum Oxide Thin Films From Ta(OC2H5)5 and H2O,” Applied Surface Science, vol. 112, Mar. 1997, p. 236-42. |
Kukli, et al., “Atomic Layer Epitaxy Growth of Tantalum Oxide Thin Films from Ta(OC2H5)5 and H2O,” Journal of the Electrochemical Society, vol. 142, No. 5, May 1995; p. 1670-5. |
Hwang, et al. “Nanometer-Size a-PbO2-type TiO2 in Garnet: A Thermobarometer for Ultrahigh-Pressure Metamorphism,” Science Vo. 288 (Apr. 14, 2000). |
George, et al. “Surface Chemistry for Atomic Layer Growth,” J. Phys. Chem. 1996 100, 13121-13131. |
George, et al. “Atomic Layer Controlled Depositon of SiO2 and Al2O3 using ABAB . . . binary reaction sequence chemistry,” Applied Surface Science 82/83 (1994) 460-467. |
Applied. Phys. Lett. 71 (25), Dec. 22, 1997 (3604-6). |
Eisenbraum, et al. “Atomic Layer Deposition (ALD) of Tantalum-based materials for zero thickness copper barrier applications,” Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No. 01EX461) 2001. |
Chang-Wook, et al. “Plasma-assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films,” Jpn. J. Appl. Phys. 1, vol. 40, No. 1, Jan. 2001 pp. 285-289. |
Eisenbraum, et al. “Atomic Layer Deposition (ALD) of Tantalum-based materials for zero thickness copper barrier applications,” Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No. 01EX461) 2001. |
Chang-Wook, et al. “Growth and Characterization of Aluminum Oxide (Al2O3) Thin Films by Plasma-Assisted Atomic Layer Controlled Deposition,” J. Korean Inst. Met. Mater., vol. 38, No. 10, Oct. 2000 pp. 1395-1399. |
Number | Date | Country | |
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60/337076 | Dec 2001 | US |