The invention relates generally to systems and methods for providing fluid for immersion lithography and, more particularly, for controlling the fluid flow and pressure to provide stable conditions for immersion lithography.
An exposure apparatus is one type of precision assembly that is commonly used to transfer images from a reticle onto a semiconductor wafer during semiconductor processing. A typical exposure apparatus includes an illumination source, a reticle stage assembly that retains a reticle, an optical assembly, a wafer stage assembly that retains a semiconductor wafer, a measurement system, and a control system. The resist coated wafer is placed in the path of the radiation emanating from a patterned mask and exposed by the radiation. When the resist is developed, the mask pattern is transferred onto the wafer. In microscopy, extreme ultraviolet (EUV) radiation is transmitted through a thin specimen to a resist covered plate. When the resist is developed, a topographic shape relating to the specimen structure is left.
Immersion lithography is a technique that can enhance the resolution of projection lithography by permitting exposures with a numerical aperture (NA) greater than one, which is the theoretical maximum for conventional “dry” systems. By filling the space between the final optical element and the resist-coated target (i.e., wafer), immersion lithography permits exposure with light that would otherwise be totally internally reflected at an optic-air interface. Numerical apertures as high as the index of the immersion liquid (or of the resist or lens material, whichever is least) are possible. Liquid immersion also increases the wafer depth of focus, i.e., the tolerable error in the vertical position of the wafer, by the index of the immersion liquid compared to a dry system with the same numerical aperture. Immersion lithography thus has the potential to provide resolution enhancement equivalent to the shift from 248 to 193 nm. Unlike a shift in the exposure wavelength, however, the adoption of immersion would not require the development of new light sources, optical materials, or coatings, and should allow the use of the same or similar resists as conventional lithography at the same wavelength. In an immersion system where only the final optical element and its housing and the wafer (and perhaps the stage as well) are in contact with the immersion fluid, much of the technology and design developed for conventional tools in areas such as contamination control, carry over directly to immersion lithography.
One of the challenges of immersion lithography is to design a system for delivery and recovery of a fluid, such as water, between the final optical element and the wafer, so as to provide a stable condition for immersion lithography.
Embodiments of the invention are directed to systems and methods of controlling the fluid flow and pressure to provide stable conditions for immersion lithography. A fluid is provided in a space between the lens and the substrate during the immersion lithography process. Fluid is supplied to the space and is recovered from the space through a porous member in fluidic communication with the space. Maintaining the pressure in the porous member under the bubble point of the porous member can eliminate noise created by mixing air with the fluid during fluid recovery. The bubble point is a characteristic of the porous member that depends on the size of the holes in the porous member (the largest hole) and the contact angle that the fluid forms with the porous member (as a parameter based on the property of the porous material and the property of the fluid). Because the bubble point is typically a very low pressure, the control of this low pressure becomes an important issue.
An aspect of the invention is directed to a method of recovering a fluid from a space between a lens and a substrate in an immersion lithography system. The method includes drawing the fluid from the space via a recovery flow line through a porous member and maintaining a pressure of the fluid in the porous member below a bubble point of the porous member during drawing of the fluid from the space.
In some embodiments, maintaining the pressure is accomplished by providing an overflow container kept at a preset pressure and directing the fluid drawn from the space through the porous member via the recovery flow line to the overflow container. Maintaining the pressure can further include siphoning the fluid from the overflow container to a collection tank. The fluid is siphoned down by gravity to the collection tank disposed below the overflow container. In other embodiments, maintaining the pressure includes providing a fluid level buffer, drawing the fluid from the space via a buffer flow line through the porous member to the fluid level buffer, sensing a pressure or a fluid level at the fluid level buffer, and controlling the fluid flow drawn from the space via the recovery flow line through the porous member based on the sensed pressure or fluid level at the fluid level buffer. Controlling the fluid flow can include controlling a variable valve disposed in the recovery flow line downstream of the porous member. In still other embodiments, maintaining the pressure includes providing a fluid level buffer, drawing the fluid from the space via a buffer flow line through the porous member to the fluid level buffer, sensing a pressure or a fluid level at the fluid level buffer, and controlling a vacuum pressure at an outlet of the recovery flow line through the porous member based on the sensed pressure or fluid level at the fluid level buffer. Controlling the vacuum pressure can include controlling a vacuum regulator in a collection tank at the outlet of the recovery flow line.
In accordance with another aspect of the invention, an apparatus for recovering a fluid from a space between a lens and a substrate in an immersion lithography system includes an inner part that includes a lens opening to accommodate a portion of the lens and to position the lens apart from the substrate separated by the space to receive a fluid in the space between the lens and the substrate. An outer part is disposed around the inner part, and includes a porous member fluidicly coupled with the space and with a fluid recovery outlet to draw fluid from the space via the porous member to the fluid recovery outlet. A pressure control system is fluidicly coupled with the porous member to maintain a pressure at the surface of the porous member below a bubble point of the porous member during drawing of the fluid from the space via the porous member.
In some embodiments, the pressure control system includes an overflow container fluidicly coupled with the porous member and a vacuum regulator that regulates a pressure in the overflow container. A collection tank is fluidicly coupled to and disposed below the overflow container. In other embodiments, the pressure control system includes a fluid level buffer fluidicly coupled with the porous member, a sensor that senses a pressure or a fluid level at the fluid level buffer and a controller that adjusts a flow rate of the fluid drawn from the space through the fluid recovery outlet, based on a sensor signal output from the sensor, to maintain a pressure at the surface of the porous member below a bubble point of the porous member during drawing of the fluid from the space via the porous member. The pressure control system can include a valve disposed downstream of the fluid recovery outlet, and the controller controls the valve to adjust the flow rate of the fluid drawn from the space through the fluid recovery outlet. In still other embodiments, the pressure control system includes a collection tank fluidicly coupled to the fluid recovery outlet and a controllable vacuum regulator that regulates a pressure in the collection tank. The controller controls the controllable vacuum regulator to adjust the flow rate of the fluid drawn from the space through the fluid recovery outlet to the collection tank by controlling the pressure in the collection tank.
In specific embodiments, the inner part is spaced from the outer part by an intermediate spacing. The inner part includes an inner cavity forming a part of the spacing between the lens and the substrate, and the inner part includes apertures disposed above the inner cavity for at least one of introducing fluid into and drawing fluid from the inner cavity. The inner part includes apertures disposed on opposite sides of the lens opening for introducing fluid into the inner cavity. The inner part includes a pair of buffer slots disposed on opposite sides of the lens opening in a direction of scan of the immersion lithography system. The inner part includes purge holes and each of the pair of buffer slots is fluidicly coupled to at least one of the purge holes. The porous member is selected from the group consisting of a mesh, a porous material, and a member having etched holes therein.
In accordance with another aspect of the invention, an apparatus includes an optical projection system having a last optical element and that projects an image onto a workpiece, and a stage that supports the workpiece adjacent to the optical projection system when the image is being projected onto the workpiece. A gap is provided between the last optical element and the workpiece and is filled with an immersion fluid. A porous material is positioned adjacent to the gap and recovers fluid exiting the gap. A control system maintains a pressure on the porous material. The pressure is at or below the bubble point of the porous material.
The invention will be described in conjunction with the accompanying drawings of exemplary embodiments in which like reference numerals designate like elements and in which:
The outer part 30 is spaced from the inner part 32 by an intermediate spacing or groove 48, which may be referred to as an atmospheric groove. The outer part 30 includes one or more fluid recovery openings 50 disposed on opposite sides of the final optical element 22. A porous member 51 is disposed in a slot or outer cavity 53 that extends around the inner part 32 and fluidicly communicates with the pair of fluid recovery openings 50. The porous member 51 may be a mesh or may be formed of a porous material having holes typically in the size range of about 50-200 microns. For example, the porous member 51 may be a wire mesh including woven pieces or layers of material made of metal, plastic, or the like, a porous metal, a porous glass, a porous plastic, a porous ceramic, or a sheet of material having chemically etched holes (e.g., by photo-etching). The porous member 51 is desirably hydrophilic. The outer part 30 further includes a fluid buffer outlet 56 and a fluid recovery outlet 58. In another embodiment of the nozzle 20′ as seen in
One feature of the nozzle 20 is that it is made in two pieces, namely, the outer part 30 and the inner part 32. The inner part 32 keeps the fluid between the lens and the wafer surface, and the outer part 30 is mainly provided for fluid recovery. Vibration might be introduced during fluid recovery from the outer part 30 through the porous member 51 to the other components of the lithography system, including the inner part 32 which may be used to direct an autofocus beam to the wafer 16. A damping material can be mounted between the outer part 30 and the mounting piece to which the outer part 30 is mounted to minimize the transmission of vibration from the outer part 30. In addition, the outer part 30 that includes the porous member may be prone to contamination and thus needs to be replaced for maintenance. Making the outer part 30 as a separate part facilitates easier maintenance. It can also minimize readjustment and recalibration time after replacement of the outer part as opposed to replacing the entire nozzle 20. Manufacturability of the nozzle 20 can also be improved if the nozzle 20 is made in two separate parts. It is understood that the nozzle 20 may be made of a single piece in alternative embodiments.
Another feature of the nozzle 20 is the atmospheric groove 48 between the inner part 32 and the outer part 30. This atmospheric groove 48 functions as a breaking edge to prevent fluid in the inner part 32 from being drawn out by the porous member 51 on the outer part 30 if the fluid recovery rate is faster than the fluid supply rate. In the situation when there is no breaking edge, a balance between the fluid recovery rate and the fluid supply rate has to be maintained so that fluid can be kept within the inner part 32 at all times during scanning. Having the atmospheric groove 48 allows the recovery rate to be set at a maximum to minimize fluid leakage out of the outer part 30 during scanning. The atmospheric groove 48 also acts as a buffer for fluid to go in and out during scanning, minimizing water supply and recovery requirements.
In the process of immersion lithography, a fluid is to be filled between the projection lens 14 and the wafer 16 from a dry state and, at other times, the fluid is to be recovered. For example, in the beginning of exposure of a new wafer, the fluid is to completely fill the inner cavity 34 of the inner part 32 before starting exposure. During this process, ideally no air bubbles can exist between the projection lens 14 and wafer 16 or other optical paths such as the auto focus beam. The fluid supply in the inner cavity of the inner part 32 is designed to be at the highest point in the cavity (via apertures 38) so that the fluid is filled from top down, allowing air bubbles to be pushed out of the inner cavity during the filling process. The fluid desirably is initially supplied from one side in this embodiment (the set of apertures 38 on one side), so that the fluid is filled from one side to the other, again allowing air bubbles to be pushed out to avoid trapping air therein. Other arrangements are also possible, as long as the fluid is being filled from the inside out.
On occasion, the fluid has to be fully recovered from the inner cavity of the inner part 32. In
The inner part 32 has two groups or rows of holes 38 for supplying or recovering the fluid. Each row can be independently controlled to either supply or recover the fluid. In the case where both rows are chosen for fluid supply, all the fluid is recovered through the porous member 51 in the outer part 30. Because both rows are supplying fluid, a pressure can build up in the inner cavity causing deformation of the final optical element 22 of the projection lens 14 or the wafer 16 or both. The fluid flow across the final optical element 22 may also be limited, and thus the temperature of the fluid between the final optical element 22 and the wafer 16 may eventually rise, causing adverse effects. On the other hand, if one row is chosen for supply and the other for recovery, a fluid flow will be driven across the final optical element 22, minimizing temperature rise. It can also reduce the pressure otherwise created by supplying fluid from both rows. In this case, less fluid needs to be recovered through the porous member 51, lowering the fluid recovery requirement in the porous member. In other nozzle configurations, multiple fluid supplies and recoveries may be provided so as to optimize the performance.
During scanning motion of the wafer stage 18 (in the direction of scan 44 in
Recovering fluid through the porous member 51 by maintaining the pressure in the porous member 51 under the bubble point can eliminate noise created by mixing air with the fluid during fluid recovery. The bubble point is a characteristic of the porous member 51 that depends on the size of the holes in the porous member 51 (the largest hole) and the contact angle that the fluid forms with the porous member 51 (as a parameter based on the property of the porous material and the property of the fluid). Due to the fact that the bubble point is typically a very low pressure (e.g., about 1000 pascal), the control of this low pressure becomes an important issue.
In the pressure control system 100 of
In the pressure control system 120 of
In
It is to be understood that the above description is intended to be illustrative and not restrictive. Many embodiments will be apparent to those of skill in the art upon reviewing the above description. The scope of the invention should not be limited to the above description.
Also, the present invention could be applied to Twin-Stage-Type Lithography Systems. Twin-Stage-Type Lithography Systems, for example, are disclosed in U.S. Pat. No. 6,262,796 and U.S. Pat. No. 6,341,007, the disclosures of which are incorporated herein by reference in their entireties.
This is a divisional of U.S. patent application Ser. No. 12/461,243 filed Aug. 5, 2009 (now U.S. Pat. No. 8,520,187), which in turn is a continuation of U.S. patent application Ser. No. 11/790,233 filed Apr. 24, 2007 (now abandoned), which is a divisional of U.S. patent application Ser. No. 11/362,833 filed Feb. 28, 2006 (now U.S. Pat. No. 7,292,313), which is a continuation of International Application No. PCT/US2004/022915 filed Jul. 16, 2004, which claims the benefit of U.S. Provisional Patent Application No. 60/500,312 filed Sep. 3, 2003, and U.S. Provisional Patent Application No. 60/541,329 filed Feb. 2, 2004. The disclosures of these applications are incorporated herein by reference in their entireties.
Number | Name | Date | Kind |
---|---|---|---|
3648587 | Stevens | Mar 1972 | A |
4346164 | Tabarelli et al. | Aug 1982 | A |
4480910 | Takanashi et al. | Nov 1984 | A |
4509852 | Tabarelli et al. | Apr 1985 | A |
5610683 | Takahashi | Mar 1997 | A |
5715039 | Fukuda et al. | Feb 1998 | A |
5825043 | Suwa | Oct 1998 | A |
6262796 | Loopstra et al. | Jul 2001 | B1 |
6341007 | Nishi et al. | Jan 2002 | B1 |
7053983 | Tokita | May 2006 | B2 |
7292313 | Poon et al. | Nov 2007 | B2 |
7367345 | Hemker et al. | May 2008 | B1 |
7388648 | Lof et al. | Jun 2008 | B2 |
7576833 | Poon et al. | Aug 2009 | B2 |
8520187 | Poon et al. | Aug 2013 | B2 |
20020163629 | Switkes et al. | Nov 2002 | A1 |
20020191166 | Hasegawa et al. | Dec 2002 | A1 |
20030030916 | Suenaga | Feb 2003 | A1 |
20030174408 | Rostalski et al. | Sep 2003 | A1 |
20040000627 | Schuster | Jan 2004 | A1 |
20040060195 | Garcia et al. | Apr 2004 | A1 |
20040075895 | Lin | Apr 2004 | A1 |
20040109237 | Epple et al. | Jun 2004 | A1 |
20040114117 | Bleeker | Jun 2004 | A1 |
20040118184 | Violette | Jun 2004 | A1 |
20040119954 | Kawashima et al. | Jun 2004 | A1 |
20040125351 | Krautschik | Jul 2004 | A1 |
20040136494 | Lof et al. | Jul 2004 | A1 |
20040160582 | Lof et al. | Aug 2004 | A1 |
20040165159 | Lof et al. | Aug 2004 | A1 |
20040169834 | Richter et al. | Sep 2004 | A1 |
20040169924 | Flagello et al. | Sep 2004 | A1 |
20040180294 | Baba-Ali et al. | Sep 2004 | A1 |
20040180299 | Rolland et al. | Sep 2004 | A1 |
20040182422 | Boyd et al. | Sep 2004 | A1 |
20040207824 | Lof et al. | Oct 2004 | A1 |
20040211920 | Maria Derksen et al. | Oct 2004 | A1 |
20040224265 | Endo et al. | Nov 2004 | A1 |
20040224525 | Endo et al. | Nov 2004 | A1 |
20040227923 | Flagello et al. | Nov 2004 | A1 |
20040233405 | Kato et al. | Nov 2004 | A1 |
20040253547 | Endo et al. | Dec 2004 | A1 |
20040253548 | Endo et al. | Dec 2004 | A1 |
20040257544 | Vogel et al. | Dec 2004 | A1 |
20040259008 | Endo et al. | Dec 2004 | A1 |
20040259040 | Endo et al. | Dec 2004 | A1 |
20040263808 | Sewell | Dec 2004 | A1 |
20040263809 | Nakano | Dec 2004 | A1 |
20050002004 | Kolesynchenko et al. | Jan 2005 | A1 |
20050007569 | Streefkerk et al. | Jan 2005 | A1 |
20050007570 | Streefkerk et al. | Jan 2005 | A1 |
20050018155 | Cox et al. | Jan 2005 | A1 |
20050018156 | Mulkens et al. | Jan 2005 | A1 |
20050024609 | De Smit et al. | Feb 2005 | A1 |
20050030497 | Nakamura | Feb 2005 | A1 |
20050030498 | Mulkens | Feb 2005 | A1 |
20050030506 | Schuster | Feb 2005 | A1 |
20050036121 | Hoogendam et al. | Feb 2005 | A1 |
20050036183 | Yeo et al. | Feb 2005 | A1 |
20050036184 | Yeo et al. | Feb 2005 | A1 |
20050036213 | Mann et al. | Feb 2005 | A1 |
20050037269 | Levinson | Feb 2005 | A1 |
20050041225 | Sengers et al. | Feb 2005 | A1 |
20050042554 | Dierichs et al. | Feb 2005 | A1 |
20050046813 | Streefkerk et al. | Mar 2005 | A1 |
20050046934 | Ho et al. | Mar 2005 | A1 |
20050048223 | Pawloski et al. | Mar 2005 | A1 |
20050068639 | Pierrat et al. | Mar 2005 | A1 |
20050073670 | Carroll | Apr 2005 | A1 |
20050084794 | Meagley et al. | Apr 2005 | A1 |
20050094116 | Flagello et al. | May 2005 | A1 |
20050100745 | Lin et al. | May 2005 | A1 |
20050110973 | Streefkerk et al. | May 2005 | A1 |
20050117224 | Shafer et al. | Jun 2005 | A1 |
20050122497 | Lyons et al. | Jun 2005 | A1 |
20050132914 | Mulkens et al. | Jun 2005 | A1 |
20050134815 | Van Santen et al. | Jun 2005 | A1 |
20050134817 | Nakamura | Jun 2005 | A1 |
20050141098 | Schuster | Jun 2005 | A1 |
20050145265 | Ravkin et al. | Jul 2005 | A1 |
20050145803 | Hakey et al. | Jul 2005 | A1 |
20050146694 | Tokita | Jul 2005 | A1 |
20050146695 | Kawakami | Jul 2005 | A1 |
20050147920 | Lin et al. | Jul 2005 | A1 |
20050153424 | Coon | Jul 2005 | A1 |
20050158673 | Hakey et al. | Jul 2005 | A1 |
20050164502 | Deng et al. | Jul 2005 | A1 |
20050174549 | Duineveld et al. | Aug 2005 | A1 |
20050175940 | Dierichs | Aug 2005 | A1 |
20050185269 | Epple et al. | Aug 2005 | A1 |
20050190435 | Shafer et al. | Sep 2005 | A1 |
20050190455 | Rostalski et al. | Sep 2005 | A1 |
20050205108 | Chang et al. | Sep 2005 | A1 |
20050213061 | Hakey et al. | Sep 2005 | A1 |
20050213072 | Schenker et al. | Sep 2005 | A1 |
20050217135 | O'Donnell et al. | Oct 2005 | A1 |
20050217137 | Smith et al. | Oct 2005 | A1 |
20050217703 | O'Donnell | Oct 2005 | A1 |
20050219481 | Cox et al. | Oct 2005 | A1 |
20050219482 | Baselmans et al. | Oct 2005 | A1 |
20050219499 | Maria Zaal et al. | Oct 2005 | A1 |
20050225737 | Weissenrieder et al. | Oct 2005 | A1 |
20050231694 | Kolesynchenko et al. | Oct 2005 | A1 |
20050237501 | Furukawa et al. | Oct 2005 | A1 |
20050243292 | Baselmans et al. | Nov 2005 | A1 |
20050245005 | Benson | Nov 2005 | A1 |
20050253090 | Gau et al. | Nov 2005 | A1 |
20050259232 | Streefkerk et al. | Nov 2005 | A1 |
20050259233 | Streefkerk et al. | Nov 2005 | A1 |
20050259234 | Hirukawa et al. | Nov 2005 | A1 |
20050264778 | Lof et al. | Dec 2005 | A1 |
20050270505 | Smith | Dec 2005 | A1 |
20050280791 | Nagasaka et al. | Dec 2005 | A1 |
20050282405 | Harpham et al. | Dec 2005 | A1 |
20060023183 | Novak et al. | Feb 2006 | A1 |
20060023188 | Hara | Feb 2006 | A1 |
20060038968 | Kemper et al. | Feb 2006 | A1 |
20060061739 | Hoogendam et al. | Mar 2006 | A1 |
20060087630 | Kemper et al. | Apr 2006 | A1 |
20060119818 | Nagasaka | Jun 2006 | A1 |
20060139593 | Nagasaka et al. | Jun 2006 | A1 |
20060152697 | Poon et al. | Jul 2006 | A1 |
20060158627 | Kemper et al. | Jul 2006 | A1 |
20060176456 | Nagasaka et al. | Aug 2006 | A1 |
20060209278 | Kiuchi et al. | Sep 2006 | A1 |
20060209414 | Van Santen et al. | Sep 2006 | A1 |
20060261288 | Van Santen | Nov 2006 | A1 |
20070110213 | Leenders et al. | May 2007 | A1 |
20070222967 | Poon et al. | Sep 2007 | A1 |
20080291409 | Nakano | Nov 2008 | A1 |
20090002648 | Poon et al. | Jan 2009 | A1 |
Number | Date | Country |
---|---|---|
1501173 | Jun 2004 | CN |
221 563 | Apr 1985 | DE |
224 448 | Jul 1985 | DE |
0 605 103 | Jul 1994 | EP |
1 420 298 | May 2004 | EP |
1 477 856 | Nov 2004 | EP |
1 486 827 | Dec 2004 | EP |
1 489 462 | Dec 2004 | EP |
1 571 697 | Sep 2005 | EP |
1 598 855 | Nov 2005 | EP |
1 612 850 | Jan 2006 | EP |
1646074 | Apr 2006 | EP |
1646075 | Apr 2006 | EP |
1662554 | May 2006 | EP |
A-57-153433 | Sep 1982 | JP |
A-58-202448 | Nov 1983 | JP |
A-59-19912 | Feb 1984 | JP |
A-62-65326 | Mar 1987 | JP |
A-63-157419 | Jun 1988 | JP |
A-4-305915 | Oct 1992 | JP |
A-4-305917 | Oct 1992 | JP |
A-5-62877 | Mar 1993 | JP |
A-6-124873 | May 1994 | JP |
A-7-220990 | Aug 1995 | JP |
A-8-316125 | Nov 1996 | JP |
A-10-303114 | Nov 1998 | JP |
A-10-340846 | Dec 1998 | JP |
A-11-176727 | Jul 1999 | JP |
A-2000-58436 | Feb 2000 | JP |
A-2004-289126 | Oct 2004 | JP |
A-2004-320016 | Nov 2004 | JP |
A-2004-349645 | Dec 2004 | JP |
A-2005-12228 | Jan 2005 | JP |
A-2005-19864 | Jan 2005 | JP |
WO-A-2005006415 | Jan 2005 | JP |
WO-A-2005006417 | Jan 2005 | JP |
A-2005-045082 | Feb 2005 | JP |
A-2005-045223 | Feb 2005 | JP |
A-2005-045232 | Feb 2005 | JP |
WO-A-2005020299 | Mar 2005 | JP |
A-2005-109426 | Apr 2005 | JP |
A-2006-510146 | Mar 2006 | JP |
A-2006-511021 | Mar 2006 | JP |
A-2006-523029 | Oct 2006 | JP |
A-2007-525007 | Aug 2007 | JP |
200502719 | Jan 2005 | TW |
200507049 | Feb 2005 | TW |
WO 9949504 | Sep 1999 | WO |
WO 0020940 | Apr 2000 | WO |
WO 02091078 | Nov 2002 | WO |
WO 03077037 | Sep 2003 | WO |
WO 2004019128 | Mar 2004 | WO |
WO 2004053955 | Jun 2004 | WO |
WO 2004055803 | Jul 2004 | WO |
WO 2004057589 | Jul 2004 | WO |
WO 2004057590 | Jul 2004 | WO |
WO 2004077154 | Sep 2004 | WO |
WO 2004081666 | Sep 2004 | WO |
WO 2004086468 | Oct 2004 | WO |
WO 2004090577 | Oct 2004 | WO |
WO 2004090633 | Oct 2004 | WO |
WO 2004090634 | Oct 2004 | WO |
WO 2004090956 | Oct 2004 | WO |
WO 2004092830 | Oct 2004 | WO |
WO 2004092833 | Oct 2004 | WO |
WO 2004093130 | Oct 2004 | WO |
WO 2004093159 | Oct 2004 | WO |
WO 2004093160 | Oct 2004 | WO |
WO 2004095135 | Nov 2004 | WO |
WO 2005001432 | Jan 2005 | WO |
WO 2005001572 | Jan 2005 | WO |
WO 2005003864 | Jan 2005 | WO |
WO 2005006026 | Jan 2005 | WO |
WO 2005006418 | Jan 2005 | WO |
WO 2005008339 | Jan 2005 | WO |
WO 2005013008 | Feb 2005 | WO |
WO 2005015283 | Feb 2005 | WO |
WO 2005017625 | Feb 2005 | WO |
WO 2005019935 | Mar 2005 | WO |
WO 2005022266 | Mar 2005 | WO |
WO 2005024325 | Mar 2005 | WO |
WO 2005024517 | Mar 2005 | WO |
WO 2005034174 | Apr 2005 | WO |
WO 2005050324 | Jun 2005 | WO |
WO 2005054953 | Jun 2005 | WO |
WO 2005054955 | Jun 2005 | WO |
WO 2005059617 | Jun 2005 | WO |
WO 2005059618 | Jun 2005 | WO |
WO 2005059645 | Jun 2005 | WO |
WO 2005059654 | Jun 2005 | WO |
WO 2005062128 | Jul 2005 | WO |
WO 2005064400 | Jul 2005 | WO |
WO 2005064405 | Jul 2005 | WO |
WO 2005069055 | Jul 2005 | WO |
WO 2005069078 | Jul 2005 | WO |
WO 2005069081 | Jul 2005 | WO |
WO 2005071491 | Aug 2005 | WO |
WO 2005074606 | Aug 2005 | WO |
WO 2005076084 | Aug 2005 | WO |
WO 2005081030 | Sep 2005 | WO |
WO 2005081067 | Sep 2005 | WO |
WO 2005098504 | Oct 2005 | WO |
WO 2005098505 | Oct 2005 | WO |
WO 2005098506 | Oct 2005 | WO |
WO 2005106589 | Nov 2005 | WO |
WO 2005111689 | Nov 2005 | WO |
WO 2005111722 | Nov 2005 | WO |
WO 2005119368 | Dec 2005 | WO |
WO 2005119369 | Dec 2005 | WO |
Entry |
---|
Emerging Lithographic Technologies VI, Proceedings of SPIE, vol. 4688 (2002), “Semiconductor Foundry, Lithography, and Partners”, B.J. Lin, pp. 11-24. |
Optical Microlithography XV, Proceedings of SPIE, vol. 4691 (2002), “Resolution Enhancement of 157 nm Lithography by Liquid Immersion”, M. Switkes et al., pp. 459-465. |
J. Microlith., Microfab., Microsyst., vol. 1 No. 3, Oct. 2002, Society of Photo-Optical Instrumentation Engineers, “Resolution enhancement of 157 nm lithography by liquid immersion”, M. Switkes et al., pp. 1-4. |
Nikon Corporation, 3rd 157 nm symposium, Sep. 4, 2002, “Nikon F2 Exposure Tool”, Soichi Owa et al., 25 pages (slides 1-25). |
Nikon Corporation, Immersion Lithography Workshop, Dec. 11, 2002, 24 pages (slides 1-24). |
Optical Microlithography XVI, Proceedings of SPIE vol. 5040 (2003), “Immersion lithography; its potential performance and issues”, Soichi Owa et al., pp. 724-733. |
Nikon Corporation, Immersion Workshop, Jan. 27, 2004, “Update on 193 nm immersion exposure tool”, S. Owa et al., 38 pages (slides 1-38). |
Nikon Corporation, Litho Forum, Jan. 28, 2004, “Update on 193 nm immersion exposure tool”, S. Owa et al., 51 pages (slides 1-51). |
Nikon Corporation, NGL Workshop, Jul. 10, 2003, :Potential performance and feasibility of immersion lithography, Soichi Owa et al., 33 pages, slides 1-33. |
Oct. 11, 2006 Office Action in U.S. Appl. No. 11/362,833. |
Jun. 22, 2007 Notice of Allowance in U.S. Appl. No. 11/362,833. |
Feb. 5, 2009 Office Action in U.S. Appl. No. 11/790,233. |
May 13, 2009 Office Action in U.S. Appl. No. 11/579,442. |
Nov. 10, 2009 Office Action in U.S. Appl. No. 11/579,442. |
Apr. 7, 2009 Notice of Allowance in U.S. Appl. No. 11/987,788. |
Sep. 17, 2008 Office Action in U.S. Appl. No. 11/987,788. |
Jul. 22, 2008 Office Action in Japanese Application No. 2006-525323, with translation. |
Mar. 3, 2009 Notice of Allowance in Japanese Application No. 2006-525323, with translation. |
Apr. 27, 2007 Office Action in Chinese Application No. 2004800238885, with translation. |
Feb. 24, 2010 Office Action in Chinese Application No. 200810092257.9, with translation. |
Aug. 15, 2005 Written Opinion in International Application No. PCT/US04/22915. |
Jan. 22, 2008 Office Action in European Application No. 05741209.0. |
Mar. 20, 2006 Written Opinion in International Application No. PCT/US2005/014200. |
Sep. 15, 2008 Supplemental European Search Report in European Application No. 04778426.9. |
Aug. 15, 2005 International Search Report in International Application No. PCT/US04/22915. |
Mar. 20, 2006 International Search Report in International Application No. PCT/US2005/014200. |
Feb. 4, 2011 Office Action in U.S. Appl. No. 11/579,442. |
Jun. 14, 2011 Office Action issued in JP Application No. 2008-242895 (with English translation). |
Jun. 15, 2011 Office Action issued in TW Application No. 093126654 (with English translation). |
Jun. 21, 2011 Notice of Allowance issued in U.S. Appl. No. 11/579,442. |
Sep. 20, 2011 Office Action issued in JP Application No. 2008-242895 (with English translation). |
Dec. 28, 2012 Office Action issued in Korean Application No. 2011-7024246 (with English translation). |
Mar. 5, 2013 Office Action issued in Japanese Patent Application No. 2010-255404 (with translation). |
Mar. 19, 2013 Office Action issued in European Patent Application No. 04778426.9. |
Mar. 18, 2013 Office Action issued in European Patent Application No. 05741209.0. |
Aug. 27, 2010 Office Action issued in U.S. Appl. No. 12/461,243. |
May 12, 2011 Office Action issued in U.S. Appl. No. 12/461,243. |
Jan. 4, 2013 Office Action issued in U.S. Appl. No. 12/461,243. |
Apr. 29, 2013 Notice of Allowance issued in U.S. Appl. No. 12/461,243. |
Jul. 9, 2013 Office Action issued in Japanese Application No. 2012-015910 (with translation). |
Apr. 22, 2014 Office Action issued in Taiwanese Patent Application No. 100146764 (with translation). |
Aug. 5, 2014 Office Action issued in U.S. Appl. No. 13/137,964. |
Sep. 2, 2014 Office Action issued in Japanese Patent Application No. 2013-186437 (with translation). |
Number | Date | Country | |
---|---|---|---|
20130301015 A1 | Nov 2013 | US |
Number | Date | Country | |
---|---|---|---|
60541329 | Feb 2004 | US | |
60500312 | Sep 2003 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 12461243 | Aug 2009 | US |
Child | 13944281 | US | |
Parent | 11362833 | Feb 2006 | US |
Child | 11790233 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 11790233 | Apr 2007 | US |
Child | 12461243 | US | |
Parent | PCT/US2004/022915 | Jul 2004 | US |
Child | 11362833 | US |