Embodiments of the present disclosure generally relate to substrate processing, such as semiconductor substrate processing.
Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. During processing, the substrate is positioned on a substrate support within a processing chamber. In some processes, the substrate is heated by a heater embedded in the substrate support. The interior of the processing chamber is placed under vacuum while the substrate is processed by exposure to heat and process gases. In some processes, such as chemical vapor deposition (CVD) processes, the deposition of substances at the edge of a substrate leads to flaking of the deposited layers, which adversely impacts the product yield from a substrate. Typically, such edge deposition is addressed by use of a shadow ring that sits above a substrate, and overlaps with the edge of the substrate. However, the shadow ring tends to act as a heat sink drawing heat away from the substrate, which adversely affects the uniformity of deposition of substances onto the substrate.
Thus, there is a need for improved apparatus that facilitates the processing of substrates.
The present disclosure generally relates to substrate processing, and particularly to apparatus and systems that promote a uniform deposition of substances onto a substrate by mitigating detrimental heat loss from the substrate.
In one embodiment, a shadow ring for a processing chamber includes an annular member. The annular member includes a body and a lip projecting radially inwardly from the body. The shadow ring further includes a plurality of apertures, each aperture extending from a corresponding upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring.
In one embodiment, a processing chamber includes a chamber body and a substrate support enclosed within the chamber body. The substrate support includes a first material including a first emissivity and a coating of a second material on at least a portion of a surface of the substrate support. The second material includes a second emissivity greater than the first emissivity.
In one embodiment, a processing chamber includes a chamber body and a liner disposed within the chamber body, the liner including a heater. The processing chamber further includes a substrate support enclosed within the chamber body, and movable between a raised position and a lowered position, a purge ring disposed on the substrate support, and a shadow ring. When the substrate support is in the raised position, the shadow ring is disposed on the purge ring. When the substrate support is in the lowered position, the shadow ring is disposed on the liner.
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
The present disclosure concerns substrate processing and components for chambers used in substrate processing.
The substrate support 104 contains, or is formed from, one or more metallic or ceramic materials. Exemplary metallic or ceramic materials include one or more metals, metal oxides, metal nitrides, metal oxynitrides, or any combination thereof. For example, the substrate support 104 may contain or be formed from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, or any combination thereof.
An exhaust port 156 is coupled to a vacuum pump 157. The vacuum pump 157 removes excess process gases or by-products from the processing volume 120 via the exhaust port 156 during and/or after processing.
A gas supply source 111 includes one or more gas sources. The gas supply source 111 is configured to deliver the one or more gases from the one or more gas sources to the processing volume 120. Each of the one or more gas sources provides a processing gas (such as argon, hydrogen or helium). In some embodiments, one or more of a carrier gas and an ionizable gas may be provided into the processing volume 120 along with one or more precursors. When processing a 300 mm substrate, the processing gases are introduced to the processing chamber 100 at a flow rate from about 6500 sccm to about 8000 sccm, from about 100 sccm to about 10,000 sccm, or from about 100 sccm to about 1000 sccm. Alternatively, other flow rates may be utilized. In some examples, a remote plasma source can be used to deliver plasma to the processing chamber 100 and can be coupled to the gas supply source 111.
The showerhead 112 features openings 118 for admitting process gas or gases into the processing volume 120 from the gas supply source 111. The process gases are supplied to the processing chamber 100 via a gas feed 114, and the process gases enter a plenum 116 prior to flowing through the openings 118. In some embodiments, different process gases that are flowed simultaneously during a processing operation enter the processing chamber 100 via separate gas feeds and separate plenums prior to entering the processing volume 120 through the showerhead 112.
When the substrate 150 is being processed, a shadow ring 160 sits on an upper surface of the purge ring 148. The shadow ring 160 is removable from the purge ring 148 in order to facilitate placement and removal of the substrate 150 onto, and from, the substrate support 104. In some embodiments, the shadow ring 160 is made from a ceramic material, such as aluminum oxide or aluminum nitride. The shadow ring 160 is an annular member, including a body 162 and a radially inward lip 164 that extends to an inner edge 165. The shadow ring 160 is sized such that the lip 164 is positioned above the edge 154 of the substrate 150 when the substrate 150 is positioned on the substrate support 104. As illustrated, in some embodiments, the lip 164 of the shadow ring 160 partially overlaps the substrate 150.
When the substrate 150 is being processed, the purge gas exits the ports 144 into the pocket 146, then flows from the pocket 146 between the purge ring 148 and the substrate support 104 towards the substrate 150. The purge ring 148 and the shadow ring 160 route the purge gas around the edge 154 of the substrate 150 and between the substrate 150 and the lip 164 of the shadow ring 160.
When the substrate 150 is being processed, the heating element 122 heats the substrate support 104 and the purge gas flowing through the one or more channels 142. The substrate support 104 heats the substrate 150. The portion of the substrate 150 overlapped by the shadow ring 160 loses heat to the lip 164 of the shadow ring 160. The loss of heat to the lip 164 of the shadow ring 160 is promoted by the proximity of the shadow ring 160 to the substrate 150 where the shadow ring 160 overlaps the substrate 150. Without being bound by theory, it is postulated that at the typical pressures of processing operations, a primary mechanism of heat transfer from the substrate 150 to the shadow ring 160 is by radiation.
Although the lip 164 of the shadow ring 160 is heated by heat transfer from the substrate 150, the lip 164 conducts heat to the rest of the body 162 of the shadow ring 160. A temperature of the lip 164 can remain lower than the temperature of the substrate 150 near the edge 154, which provides a temperature gradient driving further heat transfer from the substrate 150 to the lip 164 of the shadow ring 160. The temperature of the substrate 150 near the edge 154 can decrease and adversely affect the uniformity of deposition onto the substrate 150.
In some embodiments of the present disclosure, the shadow ring 160 includes one or more features configured to mitigate the effects of the transfer of heat from the substrate 150 to the shadow ring 160. In some embodiments, the shadow ring 160 is adapted such that heat conduction from the lip 164 to the rest of the body 102 of the shadow ring 160 is assuaged. In some embodiments, the shadow ring 160 is adapted such that heat transfer from the substrate 150 to the lip 164 of the shadow ring 160 is hindered.
The shadow ring 160A is a monolithic body. As shown in
In
In some embodiments, each hole 174 of one circle of holes 174 is aligned with a corresponding hole 174 of another circle of holes 174 along a radius from the geometric center of the shadow ring 160A′. As illustrated, in some embodiments, each hole 174 of one circle of holes 174 is not aligned with a corresponding hole 174 of another circle of holes 174 along a radius from the geometric center of the shadow ring 160A′.
In some embodiments, the shadow ring 160A of
In the shadow ring 160A of any of
As illustrated, in some embodiments, the one or more apertures 170 may be located within the lip 164. In some embodiments, the one or more apertures 170 may be located within the body 162. In some embodiments, the one or more apertures 170 may be located within the lip 164 and within the body 162.
As illustrated, in some embodiments, the one or more apertures 170 may be located within the inner body 180B. In some embodiments, the one or more apertures 170 may be located within the outer body 180A. In some embodiments, the one or more apertures 170 may be located within the inner body 180B and within the outer body 180A.
As illustrated, in some embodiments, the stepped configuration may be formed on the inner body 180B. In some embodiments, the stepped configuration may be formed on the outer body 180A. In some embodiments, the stepped configuration may be formed at least in part on the inner body 180B and at least in part on the outer body 180A.
In some embodiments, the treatment includes the application of a coating. The coating is selected such that an emissivity of the coating is less than an emissivity of the material of the body of the shadow ring 160H. In an example, the coating includes a layered structure of tantalum and a tantalum oxide, such as Ta2O5. In another example, the coating includes a titanium-yttrium ceramic, such as TiO2—Y2O3.
In some embodiments, the treatment includes polishing the lower surface such that the lower surface is more reflective than a non-polished surface of the shadow ring 160H. In some embodiments, the treatment includes the application of a coating and polishing.
As illustrated, in some embodiments, the inner edge 165 of the lip 164 is subjected to the treatment. Without being bound by theory, it is postulated that, in operation, the treatment applied to the portion 184 of the lower surface 168 and/or the inner edge 165 hinders heat transfer from the substrate 150 to the lip 164 of the shadow ring 160H.
In some embodiments, the shadow ring 160H may incorporate a feature of any one or more of the shadow ring 160A, 160B, or 160C.
In some embodiments of the present disclosure, the processing chamber 100 includes one or more features configured to mitigate the effects of the transfer of heat from the substrate 150 to the shadow ring 160. In some embodiments, the substrate support 104 is adapted to transfer heat to a portion of the substrate 150 near the edge 154 of the substrate 150 that is not in contact with the substrate support 104. In some embodiments, the processing chamber 100 includes equipment adapted to heat the shadow ring separately from any heating of the shadow ring by the substrate support 104.
In some embodiments, the treatment includes the application of a coating. The coating is selected such that an emissivity of the coating is greater than an emissivity of the material of the substrate support 104′. In an example, the coating includes oxidized Inconel 718.
The portion 132 of the surface of the substrate support 104′ transmits heat by radiation to the portion of the substrate 150 near the edge 154 of the substrate 150 that is not in contact with the substrate support 104′. Such transfer of heat at least partially compensates for the transfer of heat from the portion of the substrate 150 near the edge 154 of the substrate 150 to the lip 164 of the shadow ring 160. The reduction in temperature experienced by the portion of the substrate 150 near the edge 154 of the substrate 150 is mitigated at least partially by the transfer of heat from the portion 132 of the surface of the substrate support 104′ that has been subjected to the emissivity-enhancement treatment.
In some embodiments, the shadow ring 160 may incorporate a feature of any one or more of the shadow ring 160A, 160B, 160C, or 160H.
When the substrate support 104 is raised in preparation for processing the substrate 150, the shadow ring 160 is lifted off the liner 108 by the purge ring 148. Having been heated by the liner 108, the shadow ring 160 is less of a heat sink than if the shadow ring 160 had not been heated by the liner 108. Heat transfer from the lip 164 of the shadow ring 160 to the rest of the body 102 of the shadow ring 160 is not as great as if the shadow ring 160 had not been heated by the liner 108. While processing the substrate 150, the temperature of the lip 164 increases due to an initial heat transfer from the substrate 150. However, the rate of heat transfer from the lip 164 to the rest of the body 162 of the shadow ring 160 is lower than if the shadow ring 160 had not been heated by the liner 108. The rate of heat transfer from the substrate 150 to the lip 164 diminishes, and heat loss from the substrate 150 to the lip 164 reduces.
In some embodiments, the shadow ring 160 sits on the liner 108 close to the showerhead 112. In some embodiments, the showerhead 112 includes a heater that heats the shadow ring 160. In some of such embodiments, the liner does not include a heater.
In some embodiments, the shadow ring 160 may incorporate a feature of any one or more of the shadow ring 160A, 160B, 160C, or 160H. In some embodiments, at least a portion of a surface of the substrate support 104 may incorporate the surface treatment of the substrate support 104′.
Line 196 shows a significant deposition occurring towards the edge 154 of the substrate 150 compared with deposition across the rest of the substrate 150. Such deposition towards the edge 154 of the substrate 150 is undesirable. Because the operations conducted in a processing chamber 100 are subject to influence by many variables, an evaluation between line 196 and line 198 is appropriately limited to comparing the characteristics of each line 196, 198 rather than the absolute values recorded. Nevertheless, the beneficial effect of the shadow ring 160A upon deposition towards the edge 154 of the substrate 150 is demonstrated.
In a processing operation, embodiments of the present disclosure promote an even deposition of substances onto a substrate while mitigating a tendency for detrimental deposition at the edge of the substrate. The consistency of product quality produced by processing chambers incorporating one or more embodiments of the present disclosure is greater than the consistency of product quality produced by processing chambers not incorporating one or more embodiments of the present disclosure.
It is contemplated that elements and features of any one disclosed embodiment may be beneficially incorporated in one or more other embodiments. While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
This application claims benefit of U.S. Provisional Application No. 63/338,661; filed May 5, 2022; which is herein incorporated by reference in its entirety.
Number | Date | Country | |
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63338661 | May 2022 | US |