Choyke et al.; Review of Optical Work in SiC since 1968; From the Book: Silicon Carbide--1973, Edited by R. C. Marshall, J. W. Faust, Jr., and Ryan, University of South Carolina Press, Columbia, S.C. 1974. |
Segall et al.; Compensation in Epitaxial Cubic SiC Films; NASA Technical Memorandum 87269; Mar., 1986. |
Patrick et al.; Localized Vibrational Modes of a Persistent Defect in Ion-Implanted SiC; J. Phys. Chem. Solids, 1973, vol. 34, pp. 565-567. Pergamon Press. Printed in Great Britain. |
Patrick et al.; Photoluminescence of Radiation Defects in Ion-Implanted 6H SiC; Physical Review B, vol. 5, No. 8, Apr. 15, 1972, pp. 3253-3259. |
Freitas, Jr., et al.; Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition; J. Appl. Phys. 61(5), Mar. 1, 1987, pp. 2011-2016. |
Okumura, et al.; Photoluminescence of Unintentionally Doped and N-Doped 3C-SiCGrown by Chemical Vapor Deposition; Electrotechnical Laboratory 1-1-4, umezono, Tusukuba, Ibaraki, 305 (Rec. Nov. 13, 1987; accepted for publ. Dec. 14, 1987). |
Carlos, et al.; Residual Donors in Beta-SiC Films; Mat. Res. Symp. Proc. vol. 97, 1987; pp. 253-258. |
Yoshida et al., Heteroepitaxial growth of SiC polytypes; Jul. 1, 1987; J. Appl. Phys. 62(1), pp. 303-305. |