Patents Abstracts of Japan, vol. 134 E 115: JP-A-3-228321 (NEC) Oct. 9, 1991. |
Patents Abstracts of Japan, E-1368 May 20, 1993, vol. 17, No. 257: JP-A-5-3176 (NEC) Jan. 8, 1993. |
Patents Abstracts of Japan, E-1133 Mar. 18, 1993, vol. 17, No. 128: JP-A-4-302422 (NEC) Oct. 26, 1992. |
Patents Abstracts of Japan, E-1173 Mar. 4, 1992, vol. 16, No. 88: JP-A-3-272140 (Fujitsu) Dec. 3, 1991. |
Patents Abstracts of Japan, vol. 60 E 1520: JP-A-5-326453 Dec. 10, 1992. |
Patent Abstract of Japan No. 63/202922 (A) Yanabe Aug. 22, 1988. |
Patent Abstract of Japan No. 63/94630 (A) Tsuji Apr. 25, 1988. |
Research Disclosure Publ. Feb. 1986, No. 26238, p. 98, Backside Etch of Silicon Nitride on Device . . . . |
"Etching of Thin SiO.sub.2 layers using wet HF Gas" (Van der Heide et al.), 8257 Journal of Vacuum Science & Technology, May/Jun. 1989, No. 3, Part II, New York, pp. 1719-1723. |
Patent Abstract of Japan No. 0 531 5300 (Yasayuki), dated Nov. 26, 1994. |
Patent Abstract of Japan No. 0 322 8321 (Tsuneo), dated Oct. 9, 1991. |