This Application is a Section 371 National Stage Application of International Application No. PCT/GB2012/051632, filed Jul. 11, 2012, which is incorporated by reference in its entirety and published as WO 2013/024249 A2 on Feb. 21, 2013 and which claims priority of British Application No. 1114174.4, filed Aug. 17, 2011.
The present invention relates to apparatus for treating a gas stream. The invention finds particular application in the treatment of a gas stream exhaust from a process chamber used in the semiconductor or flat panel display industry.
A primary step in the fabrication of semiconductor devices is the formation of a thin film on a semiconductor substrate by chemical reaction of vapour precursors. One known technique for depositing a thin film on a substrate is chemical vapour deposition (CVD), which is commonly plasma enhanced. In this technique, process gases are supplied to a process chamber housing the substrate and react to form a thin film over the surface of the substrate. Examples of gases supplied to the process chamber to form a thin film include, but are not restricted to: Silane and ammonia for the formation of a silicon nitride film; Silane, ammonia and nitrous oxide for the formation of a SiON film; TEOS and one of oxygen and ozone for the formation of a silicon oxide film; and AI(CH3)3 and water vapour for the formation of an aluminium oxide film.
Gases exhausted from a process chamber can be treated with high efficiency and at a relatively low cost using a plasma abatement device. In the plasma abatement process, the gas stream is caused to flow into a thermal atmospheric pressure plasma discharge, which is primarily a source of heat. The plasma causes dissociation of the gas stream into reactive species which can combine with oxygen or hydrogen to produce relatively stable by-products.
During the plasma abatement of gasses that produce solid by-products (for example, silica during silane or TEOS oxidation), blockage problems have been encountered in the reaction chamber located down stream of the plasma flare. The chamber typically consists of a pipe of dimensions which may for example be approximately 30 mm to 50 mm in diameter and 90-150 mm in length. The purpose of the reaction chambers is to contain the hot gasses in a restricted volume to allow abatement reactions to occur. However, the chamber may become blocked with for example silica particles adhering to its walls when abating silane, TEOS or organosilanes.
One way of avoiding the adhesion of particles to the walls of the chamber is to form a water weir over their surface. However, there are nevertheless “dry” areas of the plasma reactor between the electrode (anode) and the reaction chamber, and the electrode itself requires additional cleaning.
The discussion above is merely provided for general background information and is not intended to be used as an aid in determining the scope of the claimed subject matter. The claimed subject matter is not limited to implementations that solve any or all disadvantages noted in the background.
The present invention provides apparatus for treating a gas stream, comprising a first inlet for conveying a source gas into the apparatus, at least one electrode for energising the source gas to generate a plasma, a second inlet for directing the gas stream into the generated plasma, and a scraper being fitted for movement from a first position to a second position for scraping a surface to remove solid deposits accumulated on the surface.
The Summary is provided to introduce a selection of concepts in a simplified form that are further described in the Detail Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In order that the invention may be well understood, some embodiments thereof, which are given by way of example only, will now be described with reference to the accompanying drawings, in which:
Referring to
The plasma generator comprises a second inlet (not shown) for conveying a source gas into the apparatus to be energised to form said plasma flare. The apparatus preferably comprises a reagent inlet (not shown) for conveying a reagent into the apparatus for improving treatment of the gas stream.
The apparatus comprises a reactor chamber 30 downstream of the electrode 22 in which the gas stream is treated. Since solid deposits may be generated when treating certain process gasses, for example silica particles when abating silane, TEOS or organosilanes, and the deposits may adhere to the walls of the chamber, a water weir is establishing over the walls. Water 32 enters the reaction chamber through a water inlet 34 and a water layer 36 is established over the walls of the chamber preventing particles from adhering and removing particles if they have adhered. Whilst most gas is treated in the reaction chamber, some treatment does occur upstream of the reactor chamber resulting in depositing on the surface 28 of the electrode 22.
The plasma generated in the apparatus is typically at a temperature of more than 1000° C. As will be described in more detail with reference to
An actuator 38 actuates reciprocating movement of the scraper between first and second positions. In this example, the actuator is actuated by a fluid under pressure. The fluid may be liquid in which case it would be a hydraulic actuator or gas in which case it would be a pneumatic actuator. For convenience, a hydraulic actuator is referred to hereinafter, but it will be appreciated that this is interchangeable with a pneumatic actuator, depending for example on the force required to generated by the actuator.
The hydraulic actuator comprises a hydraulic cylinder 40 receiving a piston 42 connected to the scraper. However, other arrangements such as an electric motor could be used. A control 44, which for example may be a programmable logic control (PLC), is configured for selectively activating the actuator dependent on the accumulation of solid deposits on the surface of the electrode. For example, the control may cause scraping at predetermined intervals say every thirty seconds or every five minutes, depending on how quickly it has been ascertained that deposits accumulate on the electrode during treatment of a particular process gas. Alternatively, a probe (not shown) connected to the control may be provided for sensing the accumulation of deposits and the control activates the actuator when it is sensed that accumulation is above a selected amount.
In a modification, the scraper is configured so that the plasma flare is not interrupted when the scraper is in the second position for example by providing a bore in the scraper through which the flare may extend or by providing a generally C-shaped scraper so that the flare may extend through the space provided by the C-shape. These scraper configurations reduce the period of time during which the material of the scraper is directly exposed to the high temperature of the plasma. When in the second position the material of the scraper is not directly exposed to the plasma and is only exposed during transit between the first and second positions. Further, if the scraper were accidentally to become fixed in the second position, the plasma would still be conveyed into the reaction chamber and reduced damage would occur to the scraper.
Alternatively or preferably additionally, the scraper is configured so that when in the second position it does not significantly inhibit the flow of process gas into apparatus. In this regard, the scraper is preferably provided with means by which the process gas can be conveyed through or around the scraper when the scraper is in the second condition.
Referring now in more detail to
The scraper is also shaped such that when in the second position the process gas stream is allowed to pass through the bore as shown by arrow 12. The scraper has a surface 48 (shown by broken lines in
The position of piston 42 is shown in broken lines in
A modified treatment apparatus is shown in
The upper surface 64 of the weir guide is dry and not flushed with water. Additionally, it is not in direct contact with the plasma flare 16. Accordingly, the surface is susceptible to the accumulation of deposits and therefore the scraper 26 in this apparatus is arranged to scrape the upper surface 64 during reciprocating movement between the first and the second positions. That is, a first, or upper, leading edge 66 of the scraper scrapes deposits from the electrode and a second, or lower, leading edge 68 of the scraper scrapes deposits from the upper surface 64 of the weir guide 62.
Another embodiment of the invention is shown schematically in
Another scraper 90 is shown in
The plasma generator 14 may in one example be formed by the DC plasma torch shown in
The scrapers described herein are advantageously corrosion resistant in the presence of halogens like fluorine and have good mechanical strength. Additionally, the scrapers preferably have high thermal conductivity to minimise local heating (and consequently, destruction) during interaction with the plasma flare for short periods. The characteristics of nickel 201 alloy is a suitable material from which to make the scrapers having a thermal conductivity of 79.3 W/mC which is several times higher than stainless steel alloys for example. Nickel 201 is also resistant to corrosive gases which may be present in the apparatus and has good mechanical strength.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims.
Number | Date | Country | Kind |
---|---|---|---|
1114174.4 | Aug 2011 | GB | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/GB2012/051632 | 7/11/2012 | WO | 00 | 7/25/2014 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2013/024249 | 2/21/2013 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
5091625 | Kohda et al. | Feb 1992 | A |
6855190 | Nikkhah | Feb 2005 | B1 |
20030054299 | Kawamura et al. | Mar 2003 | A1 |
20030175052 | Adachi et al. | Sep 2003 | A1 |
20050226790 | Park et al. | Oct 2005 | A1 |
20070148061 | Lau et al. | Jun 2007 | A1 |
20090274592 | Bergeron | Nov 2009 | A1 |
20100061908 | Smith | Mar 2010 | A1 |
20120085636 | Al-Saud et al. | Apr 2012 | A1 |
Number | Date | Country |
---|---|---|
102136410 | Jul 2011 | CN |
H0352777 | Mar 1991 | JP |
H1081150 | Mar 1998 | JP |
2003299942 | Oct 2003 | JP |
2007263554 | Oct 2007 | JP |
2008093442 | Apr 2008 | JP |
2011038666 | Feb 2011 | JP |
2004064983 | Aug 2004 | WO |
2009010792 | Jan 2009 | WO |
2009134663 | Nov 2009 | WO |
Entry |
---|
Prosecution history of corresponding Chinese Application No. 201280040000.3 including: First Office Action dated Feb. 2, 2015 and Chinese Search Report dated Jan. 21, 2015. |
PCT International Search Report dated Apr. 2, 2013 for corresponding Application No. PCT/GB2012/051632, filed Jul. 11, 2012. |
PCT International Written Opinion dated Apr. 2, 2013 for corresponding Application No. PCT/GB2012/051632, filed Jul. 11, 2012. |
British Search Report dated Nov. 25, 2011 for corresponding Application No. GB1114174.4. |
Office Action and Response for corresponding Chinese Application No. 201280040000.3, Sep. 29, 2015. |
Japan Office Action dated Mar. 7, 2016 for corresponding Japanese Application No. 2014-525484. |
Office Action dated Apr. 21, 2016 and Search Report dated Apr. 15, 2016 for corresponding Taiwanese Application No. 101125911. |
Number | Date | Country | |
---|---|---|---|
20150027369 A1 | Jan 2015 | US |