Claims
- 1. A method for fabricating an integrated circuit, comprising the steps of:providing a semiconductor wafer with a resist pattern formed thereon; placing said semiconductor wafer in a process chamber; and spraying an ozonated deionized water mist to a surface of said semiconductor wafer to remove said resist pattern while rotating said semiconductor wafer alternately in a clockwise direction and a counterclockwise direction.
- 2. The method of claim 1, wherein said spraying step is performed at an elevated temperature in the range of 55-65° C.
- 3. The method of claim 1, wherein said ozonated deionized water mist is formed by combining deionized water with ozone in an atomizer.
- 4. The method of claim 1 wherein said step of placing said semiconductor wafer is a process chamber comprises the step of placing said semiconductor wafer in a carrier with a plurality of additional semiconductor wafers.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority under 35 USC §119(e)(1) of provisional application No. 60/165,112 filed Nov. 12, 1999.
The following co-pending applications are related and are hereby incorporated by reference:
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4778532 |
McConnell et al. |
Oct 1988 |
A |
5464480 |
Matthews |
Nov 1995 |
A |
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Mar 2001 |
B1 |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/165112 |
Nov 1999 |
US |