Claims
- 1. A method of fabricating a boron structure for an ion source comprising:
positioning a substrate in a processing chamber; forming a boron material on a surface of the substrate to form a composite structure; removing the boron material from the chamber; and assembling an ion source housing with the boron material.
- 2. The method of claim 1 further comprising machining the composite structure.
- 3. The method of claim 1 wherein the forming step comprises depositing boron in a vacuum chamber.
- 4. The method of claim 1 further comprising depositing a film having a thickness in the range of 0.5 to 3.0 mm.
- 5. The method of claim 1 wherein the substrate comprises graphite.
- 6. The method of claim 1 further comprising forming an aperture in the substrate structure to define a beam path for ions exiting the ion source.
- 7. The method of claim 1 further comprising:
forming a plurality of composite boron structures; and assembling the plurality of structures to provide an ion source chamber.
- 8. The method of claim 1 further comprising depositing a amorphous boron film having a density of at least 50% of maximum density.
- 9. The method of claim 1 further comprising forming the boron material using a chemical vapor deposition process.
- 10. The method of claim 1 further comprising providing a chemical vapor deposition reactor, providing a boron containing gas within the reactor and heating the substrate.
- 11. The method of claim 1 further comprising forming an amorphous boron material on the substrate.
- 12. The method of claim 10 further comprising depositing the boron material at a temperature of less than about 1500° C. to form an amorphous material.
- 13. An ion source comprising:
an ion source housing including an amorphous boron material having a density of at least 50% of the maximum density of boron; a cathode; an anode; and an aperture through which ions exit the ion source.
- 14. The ion source of claim 13 wherein the boron material comprises a layer having a thickness in a range of 0.5 mm to 3.0 mm.
- 15. The ion source of claim 13 wherein the boron material is on a substrate.
- 16. The ion source of claim 13 wherein the ion source is a Bernas source.
- 17. The ion source of claim 13 wherein the housing comprises a plurality of assembled boron components.
- 18. A method for chemical vapor deposition of a boron structure for an ion source comprising:
positioning a substrate in a chemical vapor deposition chamber; depositing a boron material in the chamber; removing the boron material from the chamber; and assembling an ion source housing with the boron material.
- 19. The method of claim 18 further comprising heating a substrate in the chamber on which the boron material is deposited.
- 20. The method of claim 19 wherein the heating step comprises inductively heating the substrate.
RELATED APPLICATIONS
[0001] This application is a divisional application of U.S. Ser. No. 09/290,471 filed on Apr. 12, 1999 which is a continuation application of U.S. Ser. No. 09/002,748 (now U.S. Pat. No. 5,914,494) filed on Jan. 5, 1998 which is a continuation application of International Application No. PCT/US97/17938 filed on Oct. 3, 1997 which is a continuation-in-part application of U.S. Ser. No. 08/725,980 filed Oct. 4, 1996 which is a continuation-in-part of U.S. Ser. No. 08/622,849 filed on Mar. 27, 1996, the teachings of the above applications being incorporated herein by reference in their entirety.
Divisions (1)
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Number |
Date |
Country |
Parent |
09290471 |
Apr 1999 |
US |
Child |
09739193 |
Dec 2000 |
US |
Continuations (2)
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Number |
Date |
Country |
Parent |
09002748 |
Jan 1998 |
US |
Child |
09290471 |
Apr 1999 |
US |
Parent |
PCT/US97/17938 |
Oct 1997 |
US |
Child |
09002748 |
Jan 1998 |
US |
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
08725980 |
Oct 1996 |
US |
Child |
PCT/US97/17938 |
Oct 1997 |
US |
Parent |
08622849 |
Mar 1996 |
US |
Child |
08725980 |
Oct 1996 |
US |