Claims
- 1. A method of fabricating a boron structure for an ion source comprising:
- positioning a substrate in a deposition chamber;
- depositing boron on a surface of the substrate to form a composite structure;
- removing the composite structure from the chamber; and
- assembling an ion source with the composite structure.
- 2. The method of claim 1 further comprising machining the composite structure.
- 3. The method of claim 1 wherein the deposition step comprises depositing boron in a vacuum chamber.
- 4. The method of claim 1 further comprising depositing a film having a thickness in the range of 0.5 to 3.0 mm.
- 5. The method of claim 1 wherein the substrate comprises graphite.
- 6. The method of claim 1 further comprising forming an aperture in the substrate structure to define a beam path for ions exiting the ion source.
- 7. The method of claim 1 further comprising:
- forming a plurality of composite boron structures; and
- assembling the plurality of structures to provide an ion source chamber.
- 8. The method of claim 1 further comprising depositing a amorphous boron film having a density of at least 50% of maximum density.
- 9. A method of fabricating a boron structure for an ion source comprising:
- positioning a substrate in a processing chamber;
- forming a boron layer on a surface of the substrate;
- removing the boron layer from the chamber; and
- processing the boron layer and assembling the ion source.
- 10. The method of claim 9 further comprising machining the boron layer.
- 11. The method of claim 9 wherein the forming step comprises depositing boron in a vacuum chamber.
- 12. The method of claim 9 further comprising forming a film having a thickness in the range of 0.5 to 3.0 mm.
- 13. The method of claim 9 wherein the substrate comprises graphite.
- 14. The method of claim 9 further comprising forming an aperture in the substrate structure to define a beam path for ions exiting the ion source.
- 15. The method of claim 9 further comprising:
- forming a plurality of boron layers; and
- assembling the plurality of boron layers to provide an ion source chamber.
- 16. The method of claim 9 further comprising forming a amorphous boron film having a density of at least 50% of maximum density.
- 17. A method of fabricating a composite structure for an ion source comprising:
- positioning an ion source housing in a deposition chamber;
- depositing an amorphous boron layer on a surface of the ion source housing to form a composite baron structure;
- inserting electrodes into the composite boran structure to form an ion source for an ion implanter.
- 18. The method of claim 17 further comprising machining the composite boron layer.
- 19. The method of claim 17 further comprising depositing a boron layer having a thickness in the range of 0.5 to 3.0 mm.
- 20. The method of claim 17 wherein the ion source housing comprises graphite.
RELATED APPLICATION
This application is a Continuation-in-Part of prior Ser. No. 08/622,849 filed Mar. 27, 1996, now abandoned, the teachings of which is incorporated herein by reference in its entirety.
US Referenced Citations (23)
Non-Patent Literature Citations (2)
Entry |
Wolf, Bernhard, Handbook of Ion Sources, Chapter 2, Characterization of Ion Sources Section 2 (pp. 37-46) , Section 3 (pp. 47-60) , Section 4 (pp. 61-67) and Section 6 (pp. 93-100) 1995. |
Hot Press Furnace Brochure, Advanced Vacuum Systems 1995. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
622849 |
Mar 1996 |
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