Patent Application
20130309416
The present invention relates to an atmospheric pressure plasma treatment apparatus and an atmospheric pressure plasma treatment method for performing plasma treatment under the atmospheric pressure.
There has been an atmospheric pressure plasma treatment apparatus that forms a film on a substrate surface. The atmospheric pressure plasma treatment apparatus supplies a reaction gas to, for example, between opposed electrodes and applies a voltage to the electrodes to cause plasma excitation and generate a plasma gas. The plasma gas generated by the plasma excitation is brought into contact with the surface of a substrate. Exhaust is performed in an outer peripheral section of a contact section of the plasma gas and the substrate.
As such an atmospheric pressure plasma treatment apparatus, for example, Patent Literature 1 discloses a technology for supplying an inert gas to the periphery of a plasma discharge area as a curtain gas with a supply amount larger than a supply amount of a reaction gas, covering the ambient atmosphere with a purge gas, and sucking, from an exhaust duct, the curtain gas and the purge gas blown out toward a substrate and discharging the curtain gas and the purge gas.
Patent Literature 1: Japanese Patent Application Laid-Open No. 2006-5007
However, when a plasma treatment head and the substrate need to be relatively moved, the velocities and the directions of the gases between the plasma treatment head and the substrate are different from the velocities and the directions of the gases in the plasma treatment performed in a state in which the plasma treatment head and the substrate are kept stationary. Therefore, there is a problem in that it is difficult to homogenize electric discharges. If the gas supply amount is increased to reduce the influence of the relative movement, there is a problem in that an increase in manufacturing costs involved in an increase in a consumption of the gases is caused.
The present invention has been devised in view of the above and it is an object of the present invention to obtain an atmospheric pressure plasma treatment apparatus that can attain, while suppressing an increase in the consumption of the gases, homogenization of electric discharges when the plasma treatment head and the substrate are relatively moved.
In order to solve the above problem and in order to attain the above object, an atmospheric pressure plasma treatment apparatus of the present invention, includes: an atmospheric pressure plasma treatment head including a first electrode to which an alternating-current power is applied, a grounded second electrode, a reaction gas channel formed in an outer periphery of the first electrode, a reaction gas supplied to a surface to be treated of a member to be treated passing through the reaction gas channel, an exhaust channel formed in an outer periphery of the reaction gas channel, and a curtain-gas supply channel formed in an outer periphery of the exhaust channel; a moving unit configured to hold the member to be treated to be opposed to the atmospheric pressure plasma treatment head such that the surface to be treated is exposed to the reaction gas supplied from the reaction gas channel and relatively move the atmospheric pressure plasma treatment head and the member to be treated; a gas supply unit configured to cause the reaction gas to pass through the reaction gas channel and cause the curtain gas to pass through the curtain-gas supply channel; an exhaust unit configured to exhaust the gasses present between the atmospheric pressure plasma treatment head and the surface to be treated from the exhaust channel; and a control unit configured to control the gas supply unit and the exhaust unit. The control unit controls, in an atmosphere in a state in which an electric field is generated between the first electrode and the second electrode by the application of the alternating-current power, a flow rate of the gases exhausted from the exhaust channel to be larger than a flow rate of the reaction gas supplied from the reaction gas channel and controls a flow rate of the curtain gas supplied from the curtain-gas supply channel to be larger than a flow rate of the gases exhausted from the exhaust channel and, when the atmospheric pressure plasma treatment head and the member to be processed are relatively moved by the moving unit, while substantially fixing a total flow rate of the reaction gas from the reaction gas channel and a total flow rate of the curtain gas from the curtain-gas supply channel, increases a flow rate of the reaction gas and a flow rate of the curtain gas from an opposite direction side of a relative moving direction of the member to be treated with respect to the atmospheric pressure plasma treatment head and reduces a flow rate of the reaction gas and a flow rate of the curtain gas in the relative moving direction side of the member to be processed compared with the flow rates of the reaction gas and the curtain gas flowing when the atmospheric pressure plasma treatment head and the member to be treated are not relatively moved, and controls an exhaust flow rate such that a gas stream between the member to be treated and the atmospheric pressure plasma treatment head flows to an outside of the atmospheric pressure plasma treatment head in an outer peripheral section of the curtain-gas supply channel and flows to the exhaust channel in a collecting section of the exhaust channel.
According to the present invention, because the flow rates of the gases and the exhaust are controlled, in plasma treatment in the atmosphere, there is an effect that it is possible to attain, while suppressing an increase in the consumption of the gasses, homogenization of electric discharges when the plasma treatment head and the substrate are relatively moved.
Atmospheric pressure plasma treatment apparatuses and atmospheric pressure plasma treatment methods according to embodiments of the present invention are explained in detail below based on the drawings. The present invention is not limited by the embodiments.
Further, the atmospheric pressure plasma treatment head 1 has a function of exhausting the reaction gas in an unreacted state, gas decomposed by plasma, a reaction generated gas generated by reaction with a substrate, and the curtain gas (these gases are hereinafter generally referred to as unreacted gas and the like) along arrows 4.
A reaction gas channel 16 for supplying the reaction gas along the arrows 2, a curtain-gas supply channel 17 for supplying the curtain gas including the inert gas along the arrows 3, and an exhaust channel 18 for exhausting the unreacted gas and the like along the arrows 4 are formed by the channel forming members 13. The reaction gas channel 16, the curtain-gas supply channel 17, and the exhaust channel 18 are formed to surround the periphery of the input-side high-frequency electrode 11a.
The channels 16, 17, and 18 are divided into four sections as shown in
As the material of the high-frequency electrode 11, for example, copper, aluminum, stainless steel, and brass can be used. The high-frequency electrode 11 includes the cooling mechanism 10 configured to lead in cooling water to cool the high-frequency electrode 11. The insulator 12 is provided in the periphery of the high-frequency electrode 11 including the substrate 19 side except the solid source 14 to prevent arc generation. The frequency of the high-frequency electrode 11 is not limited to 13.56 MHz often used for a high-frequency electrode. The frequency can be any frequency in a range of a low frequency of several kilohertz to a high frequency of several hundred megahertz as long as stable plasma discharge is possible at the frequency.
As the insulator 12, for example, polyethylene terephthalate, aluminum oxide, titanium oxide, and quartz can be used. The reaction gas is supplied to between the substrate 19 and the solid source 14 passing through the reaction gas channel 16 in the direction indicated by the arrows 2. A gap region present between the high-frequency electrodes 11, i.e., the input-side high-frequency electrode 11a and the ground-side high-frequency electrode 11b is a plasma generation region.
The input-side high-frequency electrode 11a is provided in a position further apart from the stage 20 than the other sections of the atmospheric pressure plasma treatment head 1. Consequently, the reaction gas easily flows into the plasma generation region. It is possible to reduce an amount of the reaction gas flowing to the exhaust channel 18.
A protrusion can be provided in a section between the reaction gas channel 16 and the exhaust channel 18. In this case, as in the case explained above, because the reaction gas less easily flows to the exhaust channel 18 side, the reaction gas easily flows into the plasma generation region. Therefore, it is possible to reduce an amount of the reaction gas flowing to the exhaust channel 18.
The channel forming members 13 are desirably formed of a material that does not react with the unreacted gas and the like in use and are preferably formed of aluminum, stainless steel, aluminum oxide, or the like. The reaction gas channel 16 is formed to surround the input-side high-frequency electrode 11a from the outer side. A reaction-gas supply unit (a gas supply unit) 31 is connected to the reaction gas channel 16. The reaction gas is supplied from the reaction-gas supply unit 31.
The exhaust channel 18 is provided to surround the plasma generation region from the outer side. An exhaust fan (an exhaust unit) 33 is connected to the exhaust channel 18. It is possible to discharge the unreacted gas and the like to an exhaust gas treating section (not shown in the figure) through the exhaust channel 18 by causing the exhaust fan 33 to operate.
The curtain-gas supply channel 17 for supplying the curtain gas along the arrows 3 is provided further on the outer side than the exhaust channel 18. The substrate 19 side of the curtain-gas supply channel 17 is a spouting port for the curtain gas. A curtain-gas supply unit (a gas supply unit) 32 is connected to the curtain-gas supply channel 17. The curtain gas is supplied from the curtain-gas supply unit 32. The inert gas spouted from the curtain-gas supply channel 17 is sprayed against the substrate 19. A part of the inert gas is sucked from the exhaust channel 18 and the remainder is emitted to the outside atmosphere.
When such a relation is satisfied, the plasma generation region has a positive pressure. All of the reaction gas and the unreacted gas and the like are blocked by the flow of the curtain gas and exhausted from the exhaust channel 18. Further, the curtain gas is emitted to the outside atmosphere as well. The outside atmosphere does not flow into the plasma generation region.
When the stage 20 and the atmospheric pressure plasma treatment head 1 relatively move to treat the entire surface of the substrate 19, for example, when the atmospheric pressure plasma treatment head 1 stands still and the stage 20 moves in a direction indicated by an arrow X, a place is formed where the direction of a total flow velocity is reversed from a direction in a stationary state.
If supply amounts of the reaction gas and the curtain gas are increased as a whole and an exhaust flow rate is also increased to overcome the moving velocity of the stage 20, it is possible to eliminate the reversal of the direction of the total flow velocity. However, in a method of increasing an amount of the gases according to an increase in the moving velocity, costs increase because the consumption of the reaction gas and the curtain gas also increases.
Therefore, to suppress the supply amount of the reaction gas and the supply amount of the curtain gas, the supply amount of the reaction gas and the supply amount of the curtain gas are increased on an upstream side (an opposite direction side of a relative moving direction of the stage 20 with respect to the atmospheric pressure plasma treatment head 1), the supply amount of the reaction gas and the supply amount of the curtain gas are reduced on a downstream side (the relative moving direction side of the stage 20 with respect to the atmospheric pressure plasma treatment head 1), and an exhaust amount is appropriately distributed according to the supply amounts of the reaction gas and the curtain gas.
The adjustment of the supply amount of the reaction gas and the supply amount of the curtain gas is performed by a control unit 40. For example, the control unit 40 receives feedback of the moving velocity of the stage 20 from the moving unit 38, adjusts opening degrees of valves provided in the reaction-gas supply unit 31 and the curtain-gas supply unit 32, and adjusts the supply amounts of the gases.
If the curtain gas amount and the exhaust amount are controlled according to the direction of the relative movement of the stage 20 and the atmospheric pressure plasma treatment head 1 to cause the flows of the gases shown in
A treatment example in the atmospheric pressure plasma treatment apparatus having such a configuration is explained with reference to film formation of a silicon film as an example. First, the power supply 15 is connected to the high-frequency electrode 11 to prepare for an input of electric power to the input-side high-frequency electrode 11a side where the solid source 14 is present. The stage 20 functioning as the ground-side high-frequency electrode 11b as well is grounded. High-frequency power is input after gas and exhaust flow rates explained below are stabilized.
The substrate 19 is arranged on the stage 20 with the surface to be treated facing up such that plasma can be irradiated on a surface on which a film of silicon is formed. The solid source 14 is formed of a silicon plate having purity equal to or higher than 99.99999%.
Subsequently, the reaction gas is fed to the reaction gas channel 16, the curtain gas is fed to the curtain-gas supply channel 17, and exhaust is performed through the exhaust channel 18. 400 sccm of a hydrogen gas is fed to the reaction gas channel 16 as the reaction gas. More specifically, 100 sccm of the hydrogen gas is fed to each of the reaction gas channels 16a, 16b, 16c, and 16d divided into the four sections.
5000 sccm of an inert gas (helium) is fed to the curtain-gas supply channel 17 as the curtain gas. More specifically, 1250 sccm of the inert gas is fed to each of the curtain-gas supply channels 17a, 17b, 17c, and 17d divided into the four sections.
An exhaust flow rate of the exhaust channel 18 is 1000 sccm. 250 sccm of the gases are exhausted from each of the exhaust channels 18a, 18b, 18c, and 18d divided into four sections. A flow rate relation at this point satisfies a relation of the reaction gas<the exhaust amount<the curtain gas amount. As shown in
When the substrate 19 and the atmospheric pressure plasma treatment head 1 remain stationary, the flow rates explained above are sufficient. However, when a film is formed on a large substrate or the like, it is necessary to relatively move a head and the substrate. For example, as shown in
In the example shown in
That is, when the moving velocity V of the stage 20 is equal to or higher than the velocity of the gas streams 21, 22, 23, and 26, the directions of the flows are opposite directions. The condition that the unreacted gas and the like do not flow out to the outside atmosphere and the outside atmosphere does not flow into the plasma generation region is not satisfied.
To prevent this situation, it is necessary to increase the reaction gas, curtain gas, and exhaust amounts to have velocities that overcome the moving velocity V of the stage 20. However, the increase in the curtain gas and reaction gas amounts leads to an increase in costs. Therefore, in the first embodiment, the reaction gas supply amount, the curtain gas supply amount, and the exhaust amount are adjusted on the upstream side and the downstream side during the stage movement.
For example, when the stage 20 is moving in the direction indicated by the arrow X in
When the gas amounts are adjusted in this way, the directions of the gas streams 21a, 22c, and 23a are the same as the directions in the stationary state shown in
A relation between the moving velocity V of the stage 20 and the velocity of the first gas stream 21a is shown in
At a flow velocity 0.06 m/s in the reaction gas channel 16a and a flow velocity 0.08 m/s in the curtain-gas supply channel 17a in the stationary state (the moving velocity of the stage 20 is 0 m/s) and a flow velocity of 0.02 m/s in the exhaust channel 18a, a flow velocity of the first gas stream 21a is −0.05 m/s. The first gas stream 21a flows in the direction shown in
When the moving velocity of the stage 20 is increased to 0.01 m/s, as shown in
When the moving velocity of the stage 20 is increased to 0.1 m/s, as shown in
At this point, when a flow velocity in the exhaust channel 18c on the downstream side is increased to 0.05 m/s, a flow velocity in the curtain-gas supply channel 17c on the downstream side is reduced to 0.04 m/s, a flow velocity in the reaction gas channel 16c on the downstream side is reduced to 0.04 m/s, a flow velocity in the exhaust channel 18a on the upstream side is increased to 0.1 m/s, a flow velocity in the curtain-gas supply channel 17a on the upstream side is increased to 0.1 m/s, and a flow velocity in the reaction gas channel 16a on the upstream side is increased to 0.08 m/s, the flow velocity of the first gas stream 21a subjected to the upstream and downstream control shown in
That is, if the velocity of the first gas stream 21a is sufficiently higher than the moving velocity of the stage 20, the condition is satisfied even if the flow rate control is not performed but, if the moving velocity of the stage 20 exceeds the velocity of the first gas stream 21a, the condition is not satisfied. The first gas stream 21a is explained as the example above. However, the same applies in other gas streams.
Therefore, when the stage 20 is moved at high velocity, it is possible to control the directions of the gas streams 21, 22, and 23 to directions for satisfying the condition by taking measures for increasing the flow velocities of the gas streams 21a, 22c, and 23a.
For example, even when the stage 20 is moved at high velocity, it is possible to perform stable film formation by taking measures such as reducing the distance between the substrate 19 and the atmospheric pressure plasma treatment head 1 or providing chokes in outlets of the channels to increase the flow velocities.
An effect of smoothing the supply of the reaction gas to the solid source 14 is attained by setting, to facilitate inflow of the reaction gas into the solid source 14, the height of the solid source 14 in a position further away from the substrate 19 than the channel forming members 13.
In this way, a clean environment in which little oxygen is present in the plasma generation region is created. The solid source 14 (e.g., a silicon solid source) is cooled by the cooling mechanism 10 to maintain low temperature. The substrate 19 is heated by a heater (not shown in the figure) built in the stage 20 to maintain high temperature.
When a high-frequency electric field is applied to the silicon solid source 14 including a volatile hydride from the power supply 15 via the high-frequency electrode 11, the reaction gas, for example, a hydrogen gas stream flowing from the reaction gas channel 16 simultaneously causes the following processes between the solid source 14 and the substrate: etching due to generation and volatilization of the hydride (SiHx) (x=1, 2, . . . ) of silicon of the solid source 14 caused by a chemical reaction with excited atomic hydrogen by hydrogen plasma and deposition of a solid source substance caused by re-decomposition of the hydride, which is generated by the etching, in plasma.
On the surface of the solid source 14 on a low temperature side, the speed of the reaction is higher in the etching and lower in the deposition. On the other hand, on the surface of the substrate 19 on a high temperature side, the speed of the deposition is higher and the speed of the etching is lower. Therefore, a temperature difference between the solid source 14 and the substrate 19 is set moderately large. Consequently, a speed difference between the etching and the deposition increases, relatively quick substance movement from the solid source on the low temperature side to the substrate on the high temperature side occurs. The silicon is deposited on the substrate 19.
Such substance movement not performed under decompression of a closed space is called atmospheric pressure plasma chemical transport method. It is desirable to set the temperature difference between the high temperature side and the low temperature side to about 285° C. by, for example, setting the low temperature to, for example, 15° C. and setting the high temperature to, for example, about 300° C. Therefore, if the low temperature side is set to −35° C., it is preferable to set the high temperature side to about 250° C. However, if the temperature difference is equal to or larger than 100° C., a combination of the temperatures can be changed as appropriate.
It is preferable to set the space between the substrate 19 and the atmospheric pressure plasma treatment head 1 to be equal to or smaller than about 5 mm because the hydride of the silicon has to reach the substrate. It is preferable that the space is equal to or smaller than 1 mm if possible. Because the flow velocity between the substrate 19 and the atmospheric pressure plasma treatment head 1 increases, it goes without saying that it is possible to increase scan speed even if a flow rate is the same.
Consequently, the atmospheric pressure plasma treatment apparatus is realized that does not need to cover the atmosphere with a purge gas and can perform the atmospheric pressure plasma treatment with a simple configuration and at low costs.
The example of the film formation performed using the solid source 14 is explained above. However, it goes without saying that a film can be formed in the same manner as the normal sputtering apparatus by using an argon gas as the reaction gas and using metal such as Si, gold, silver, copper, titanium, or aluminum or ceramic such as alumina or zirconium as the target 14.
The shape of the atmospheric pressure plasma treatment head 1 is shown as a square pole shape. However, the shape is not limited to this. For example, the shape can be a cylindrical shape or other shapes.
For example, a monosilane gas, a hydrogen gas, or a helium gas is fed to the reaction gas channel 16 as a reaction gas, argon is fed to the curtain-gas supply channel 17 as a curtain gas, and exhaust is performed from the exhaust channel 18. Supply amounts of the gases and an exhaust amount are adjusted in the same manner as in the first embodiment to set the directions of gas streams in the directions shown in
When high-frequency power is applied to the high-frequency electrode 11, plasma is generated between the high-frequency electrodes 11 and a silicon film can be formed on the substrate 19. The high-frequency electrode 11 is cooled by the cooling mechanism 10, whereby heating by the high-frequency power can be prevented and arc transfer caused by thermoelectron generation due to heat generation of the high-frequency electrode can be prevented. The frequency of the high-frequency electrode 11 is not limited to 13.56 MHz often used for a high-frequency electrode. The frequency can be any frequency in a range of a low frequency of several kilohertz to a high frequency of several hundred megahertz as long as stable plasma discharge is possible at the frequency.
Depending on a film material for film formation, it is possible to obtain a satisfactory film by mounting a heating mechanism on the stage 20 on which the substrate 19 is placed. For example, in silicon film formation, it is desirable to set a substrate temperature in a range of 200° C. to 400° C. When the substrate 19 and the atmospheric pressure plasma treatment head 1 are relatively moved to form a film in a large area, as explained in the first embodiment, it is possible to safely and inexpensively form the film by adjusting the curtain gas amount and the exhaust amount upstream and downstream to set the directions of the gas streams same as the directions shown in
For example, a hydrogen gas is fed to the reaction gas channel 16 as a reaction gas, nitrogen is fed to the curtain-gas supply channel 17 as a curtain gas, and exhaust is performed from the exhaust channel 18. Supply amounts of the gases and an exhaust amount are adjusted in the same manner as in the first embodiment to set the directions of gas streams in the directions shown in
When high-frequency power is applied to the high-frequency electrode 11, hydrogen plasma is generated between the high-frequency electrodes 11 and between the high-frequency electrode 11 and the substrate 19 and the hydrogen plasma can be irradiated on the substrate 19. The high-frequency electrode 11 is cooled by the cooling mechanism 10, whereby heating by the high-frequency power can be prevented and arc transfer caused by thermoelectron generation due to heat generation of the high-frequency electrode can be prevented. The frequency of the high-frequency electrode 11 is not limited to 13.56 MHz often used for a high-frequency electrode. The frequency can be any frequency in a range of a low frequency of several kilohertz to a high frequency of several hundred megahertz as long as stable plasma discharge is possible at the frequency.
When argon or the like is supplied as the reaction gas, it is possible to irradiate plasma of the argon. Depending on a type of plasma to be irradiated, when the substrate 19 is moved to form a film in a large area, as explained in the first embodiment, it is possible to safely and inexpensively perform homogenous surface treatment by adjusting the reaction gas amount, the curtain gas amount, and the exhaust amount upstream and downstream to set the directions of the gas streams same as the directions shown in
In the example explained above, the hydrogen gas is used. However, it goes without saying that it is possible to, while keeping a clean environment in the periphery, subject the substrate to discharge treatment and use the substrate for surface reforming by discharging an argon gas, an oxygen gas, a nitrogen gas, or the like alone or in combination as the reaction gas.
Because the airflow sensor 25 is provided, it is possible to directly measure flow velocities between the substrate 19 and the atmospheric pressure plasma treatment head 1. Therefore, it is possible to perform adjustment of a reaction gas amount, a curtain gas amount, and an exhaust amount upstream and downstream. Consequently, it is possible to satisfy, with a smaller flow rate, a condition that an unreacted gas and the like does not flow out to the outside atmosphere and the outside atmosphere does not flow into a plasma generation region (the directions of the gas streams shown in
With this configuration, only the vicinity of a plasma discharge area can be heated by the non-contact heating mechanism 27. Therefore, it is possible to heat only a necessary place and attain improvement of energy efficiency.
Because the sizes of the input-side high-frequency electrode 11a and the ground-side high-frequency electrode 11b are substantially the same, it is possible to increase plasma density. Therefore there is an effect that the energy efficiency is improved. Further, because the stage 20 is located between the high-frequency electrodes 11, most nonmetal materials including dielectrics such as quartz and ceramic can be used.
However, when it is necessary to heat the stage 20 in a non-contact manner, the stage 20 needs to have low transmittance for an infrared ray. When quartz or the like having high transmittance for infrared ray is used, it is necessary to perform coating of the surface of the stage 20 to increase infrared ray absorptance. Further, in the example explained above, the stage 20 is used. However, if a substrate (a member to be treated) can be directly moved by the moving unit 38, the stage 20 does not have to be provided.
When the size of the solid source (the target or the electrode) 14 is large and a rise of a substrate temperature is insufficient, it is also possible to adopt a configuration in which the ground-side high-frequency electrode 11b is formed in a mesh shape and even the inside of the electrode can be heated in a non-contact manner. With this configuration, if only a necessary place can be heated, there is an effect that the energy efficiency is improved.
In the seventh embodiment, a part of a reaction gas channel is connected to the exhaust fan 33 to prevent stagnation of gases from occurring between the high-frequency electrodes 11. In
In the reaction gas channel 16a, gases flow toward the substrate 19 side. In the reaction gas channel 16c, exhaust is performed from the space between the substrate 19 and the atmospheric pressure plasma treatment head 1. Consequently, flows of the gases from the reaction gas channel 16a to the reaction gas channel 16c are generated in the space between the substrate 19 and the atmospheric pressure plasma treatment head 1. Therefore, stagnation of the gasses less easily occurs between the high-frequency electrodes 11.
As shown in
In the reaction gas channel 16c, the gases flow toward the substrate 19 side. In the reaction gas channel 16a, exhaust is performed from the space between the substrate 19 and the atmospheric pressure plasma treatment head 1. Consequently, flows of the gages from the reaction gas channel 16c to the reaction gas channel 16a are generated in the space between the substrate 19 and the atmospheric pressure plasma treatment head 1. Therefore, stagnation of the gases less easily occurs between the high-frequency electrodes 11.
Even in a state in which the stage 20 remains stationary, as shown in
In
When the stage 20 moves in a direction indicated by the arrow Y as shown in
Even in a state in which the stage 20 remains stationary, if the reaction gas flow rate is adjusted as shown in
As explained above, the atmospheric pressure plasma treatment apparatus according to the present invention is useful for film formation on a substrate and, in particular, suitable for film formation on the substrate performed by moving a stage.
1 Atmospheric pressure plasma treatment head
2, 3, 4 Arrows
10 Cooling mechanism
11 High-frequency electrode
11
a Input-side high-frequency electrode (first electrode)
11
b Ground-side high-frequency electrode (second electrode)
12 Insulator
13 Chanel forming member
14 Solid source (target or electrode)
15 Power supply
16, 16a, 16b, 16c, 16d Reaction gas channels
17, 17a, 17b, 17c, 17d Curtain-gas supply channels
18, 18a, 18b, 18c, 18d Exhaust channels
19 Substrate (member to be treated)
20 Stage
21, 21a, 21c First gas streams
22, 22a, 22c Second gas streams
23, 23a, 23c Third gas streams
25 Airflow sensor (flow velocity measuring sensor)
26, 26a, 26c Fourth gas streams
27 Heating mechanism
30 Protrusion
31 Reaction-gas supply unit (gas supply unit)
32 Curtain-gas supply unit (gas supply unit)
33 Exhaust fan (exhaust unit)
38 Moving unit
40 Control unit
X, Y Arrows
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011 013347 | Jan 2011 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2011/076775 | 11/21/2011 | WO | 00 | 7/24/2013 |
