This application claims the priority of Chinese patent application number 201710390933.X, filed on May 27, 2017, the entire contents of which are incorporated herein by reference.
The present invention relates to the field of image sensors and, in particular, to a backside illuminated CMOS image sensor and a method of fabricating the same.
Integrated circuit (IC) technology has brought tremendous changes in many fields including computers, control systems, communication and images. In the field of images, image sensors are used as important components of digital cameras. Image sensors can be classified into charge coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors, depending on the photosensitive elements that they use and how light is sensed. Compared with CCD image sensors, CMOS image sensors can better address the ever-increasing demand of various user applications for higher image sensor performance, including, for example, more flexible image capturing, higher sensitivity, a wider dynamic range, a higher resolution, lower power consumption, better system integration, etc.
In general terms, CMOS image sensors are grouped into front-illuminated and back-illuminated. In a frontside illuminated CMOS image sensor, light is incident on a front side of the sensor, passes through an interlayer dielectric layer and interconnect layers and ultimately reaches photodiodes in pixel elements. However, additional layers (e.g., opaque layers and reflective metal layers) in the path of the light will limit the portion of the light that reaches the photodiodes, leading to impaired quantum efficiency. In contrast, in case of a backside illuminated CMOS image sensor, the light is incident on a back side of the sensor and reaches the photodiodes, without passing through the interlayer dielectric layer and interconnect layers. This allows a direct access of the light to the photodiodes, which significantly improves the image quality by reducing loss of the light and increasing optical energy acquired by each single pixel element per unit time. Nevertheless, according to findings in research conducted by the applicant, photoelectric conversion efficiency of conventional backside illuminated CMOS image sensors is still unsatisfactory and their quantum efficiency is relatively low.
It is an objective of the present invention to improve the quantum efficiency of backside illuminated CMOS image sensors.
This objective is attained by a backside illuminated CMOS image sensor and a method of fabricating such a sensor, proposed in the present invention.
The proposed backside illuminated CMOS image sensor includes:
a first substrate having a front side with a plurality of pixel cells formed therein and a back side with a plurality of grooves formed therein, each of the plurality of grooves having at least one sidewall inclined with respect to a back surface of the first substrate; and
a second substrate boned to the first substrate on a side closer to the front side of the first substrate.
Optionally, the backside illuminated CMOS image sensor may further include an interlayer dielectric layer and interconnect layers formed over the front side of the first substrate, the interlayer dielectric layer covering a front surface of the first substrate, the interconnect layers formed in the interlayer dielectric layer.
Optionally, the backside illuminated CMOS image sensor may further include a planarization layer covering the back surface of the first substrate and filling the plurality of grooves, a color filter layer covering the planarization layer and a lens layer covering the color filter layer, the color filter layer including a plurality of color filter cells, the lens layer including a plurality of micro-lenses, wherein the plurality of color filter cells, as well as the plurality of micro-lenses, are in one-to-one correspondence with the plurality of pixel cells along a direction perpendicular to the back surface of the first substrate.
Optionally, the first substrate and the second substrate may be bonded together by means of a first bonding layer on the first substrate and a second bonding layer on the second substrate.
Optionally, the plurality of grooves may have cross sections, taken along a direction perpendicular to the back surface of the first substrate, assuming one or more shapes selected from the group consisting of a V-like shape, a W-like shape and a trapezoidal shape, and cross sections, taken along a direction parallel to the back surface of the first substrate, assuming one or more shapes selected from the group consisting of a circular shape, an elliptical shape, a cross-like shape and a polygonal shape.
Optionally, the grooves may be uniformly distributed on the back side of the first substrate and equally sized.
Optionally, each of the pixel cells may be in positional correspondence with one or more of the plurality of the grooves in the back side of the first substrate.
The present invention also provides a method of fabricating the backside illuminated CMOS image sensor as defined above, including:
providing a first substrate having a front side with a plurality of pixel cells formed therein and a back side;
providing a second substrate;
bonding the second substrate to the first substrate on a side closer to the front side of the first substrate; and
forming a plurality of grooves in the back side of the first substrate, each of the plurality of grooves having at least one sidewall inclined with respect to a back surface of the first substrate.
Optionally, prior to the formation of the plurality of the grooves in the back side of the first substrate, the first substrate may be thinned at the back surface.
Optionally, the plurality of the grooves may be formed in the back side of the first substrate using a dry or wet etching process.
Optionally, subsequent to the formation of the plurality of the grooves in the back surface of the first substrate, a planarization layer covering the back surface of the first substrate and filling the grooves, a color filter layer residing on the planarization layer and a lens layer residing on the color filter layer may be sequentially formed, wherein the color filter layer includes a plurality of color filter cells, wherein the lens layer includes a plurality of micro-lenses and wherein the color filter cells, as well as the micro-lenses, are in one-to-one correspondence with the pixel cells along a direction perpendicular to the back surface of the first substrate.
As noted above, the present invention proposes a backside illuminated CMOS image sensor and a method of fabricating the sensor. The backside illuminated CMOS image sensor includes a first substrate having a front side and a back side. A plurality of pixel cells are formed in the front side and the second substrate is boned to the first substrate on a side closer to the front side. A plurality of grooves are formed in the back side of the first substrate, each having at least one sidewall inclined with respect to a back surface of the first substrate. Upon incidence of light into the grooves, it will experience one or more reflections before reaching the pixel cells. Compared with a flat back surface, the introduction of the grooves can expand the light-incidence area and increase, to a certain extent, the number of reflections of the light at the back surface of the first substrate, thereby augmenting the portion of the light that reaches the pixel cells. As a result, quantum efficiency is improved over the conventional backside illuminated CMOS image sensors.
10—first substrate; 20—second substrate; 10a—front surface of the first substrate; 10b—back surface of the first substrate; 11—recess; 12—shallow trench isolation (STI); 13—interlayer dielectric layer; 14—interconnect layer; 15—planarization layer; 16—color filter layer; 17—lens layer; 101—first bonding layer; and 201—second bonding layer.
In order for the objectives, features, and advantages of the present invention to be more readily understood, the invention will be described below in greater detail by way of specific examples with reference to the accompanying drawings.
As used in the specification and claims, the terms “first”, “second” and the like are meant to distinguish similar elements from each other rather than necessarily indicate specific sequential or temporal orderings. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other orientations than those illustrated or otherwise described herein. Likewise, if any method described herein includes a sequence of steps, then the order of the steps presented herein does not have to be the only order in which the steps may be performed, and some of the steps may be omitted and/or some other steps not described herein may be added to the method. If any element in an embodiment of the present invention depicted in one of the accompanying drawings is identical to that in another one or other ones of the drawings, for the sake of clarity, a reference numeral for the element may not be marked in all of these figures even if the element is readily identifiable therein.
Quantum efficiency of a backside illuminated CMOS image sensor generally refers to the ratio of the number of generated electrons to the number of photons that struck a back side of the sensor. In research conducted by the applicant, it has been found that light bound to a backside illuminated CMOS image sensor will be partially reflected away at a back surface of a substrate in which the sensor is formed before its arrival at the sensor, which impairs the photoelectric conversion efficiency and hence quantum efficiency of the sensor.
Based on this finding, the present invention provides a backside illuminated CMOS image sensor including a first substrate having a back side in which a number of grooves are formed each having at least one sidewall inclined with respect to a back surface of the first substrate. Upon incidence of light into the grooves, it will be reflected once or more times and then reaches pixel cells in the sensor. The grooves expand the light-incidence area of the back surface of the first substrate and increase to a certain extent reflections of the light thereat, thereby reducing reflection loss of the light and increasing the portion thereof reaching the pixel cells. This allows higher quantum efficiency over the conventional backside illuminated CMOS image sensors.
In
With continued reference to
The second substrate 20 may be boned to the first substrate 10 on the side closer to the front surface 10a. The bonding may be accomplished by means of a first bonding layer 101 on the interlayer dielectric layer 13 and a second bonding layer 201 on the second substrate 20. The first bonding layer 101 and the second bonding layer 201 may be silicon dioxide (SiO2) or another material.
With continued reference to
In a preferred embodiment, a planarization layer 15 may be formed to cover the back surface 10b of the first substrate 10 and fills the grooves 11 to protect and planarize the back surface 10b in which the grooves 11 are formed. The planarization layer 15 may be selected as a material that allows good transmission of the incident light and less absorb or reflect it, such as SiO2, so as to reduce its reflection and absorption losses. In addition, on the side closer to the back surface 10b are further formed a color filter layer 16 and a lens layer 17 so that the color filter layer 16 resides on the planarization layer 15 and the lens layer 17 resides on the color filter layer 16. The color filter layer 16 may include a plurality of color filter cells (e.g., light filters) each only allowing a component of the incident light of a certain color to pass through. The lens layer 17 may include a plurality of micro-lenses capable of optical condensation. For accurate capture of the incident light, the color filter cells, as well as the micro-lenses, may be in one-to-one correspondence with the pixel cells in the direction perpendicular to the back surface 10b of the first substrate 10. In other embodiments, subsequent to the formation of the planarization layer 15 and prior to the formation of the color filter layer 16, transparent electrodes (not shown) may be further formed on the planarization layer 15 which are electrically connected to the respective drive circuits to transmit the electrical signals to the peripheral circuitry. The electrodes may be formed of a transparent conductive oxide or aluminum.
A method for fabricating a backside illuminated CMOS image sensor according to an embodiment of the present invention will be described in detail below with reference to
At first, as shown in
Subsequently, as shown
Afterward, as shown in
In a preferred embodiment, prior to the formation of the plurality of grooves 11 in the back surface 10b of the first substrate 10, the first substrate 10 may be thinned at the back side.
Thereafter, as shown in
It is noted that the foregoing embodiments are described in a progressive manner, with the emphasis being placed on differences therebetween. Reference can be made between the embodiments for their similarities and differences. As the disclosed methods correspond to the disclosed devices, they are described in a simplified manner, and reference can be made to the description of the device for relevant details.
The preferred embodiments presented above are merely examples and are in no way meant to limit the present invention. Possible modifications and variations may be made to the subject matter of the present invention by those skilled in the art based on the above teachings without departing from the scope of the present invention. Accordingly, any simple variations, equivalent changes and modifications made to the foregoing embodiments based on the substantive disclosure of the present invention without departing from the scope of the present invention fall within the scope thereof.
Number | Date | Country | Kind |
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201710390933.X | May 2017 | CN | national |