Claims
- 1. A semiconductor structure comprising an amorphous alloy formed over at least a portion of a substrate, wherein said amorphous alloy consists essentially of amorphous aluminum nitride (AlN) and amorphous gallium nitride (GaN) and is characterized by a band gap between about 2 eV and about 6 eV.
- 2. A semiconductor structure as claimed in claim 1 wherein said amorphous alloy is characterized by a band gap between about 3 eV and about 6 eV.
- 3. A semiconductor structure as claimed in claim 1 wherein said amorphous alloy is characterized by the following formula:
- 4. A semiconductor structure comprising an amorphous alloy formed over at least a portion of a substrate, wherein said amorphous alloy consists essentially of amorphous aluminum nitride (AlN), amorphous gallium nitride (GaN), and a dopant and is characterized by a band gap between about 2 eV and about 6 eV.
- 5. A semiconductor structure as claimed in claim 4 wherein said dopant comprises a rare earth element.
- 6. A semiconductor structure as claimed in claim 5 wherein said dopant comprises a rare earth luminescent center.
- 7. A semiconductor structure comprising an amorphous alloy formed over at least a portion of a substrate, wherein said amorphous alloy consists essentially of amorphous aluminum nitride (AlN), amorphous gallium nitride (GaN), and amorphous indium nitride (InN) and is characterized by a band gap between about 2 eV and about 6 eV.
- 8. A semiconductor structure as claimed in claim 7 wherein said amorphous alloy is characterized by a band gap between about 3 eV and about 6 eV.
- 9. A semiconductor structure comprising an amorphous alloy formed over at least a portion of a substrate, wherein said amorphous alloy consists essentially of amorphous aluminum nitride (AlN), amorphous gallium nitride (GaN), amorphous indium nitride (InN), and a dopant and is characterized by a band gap between about 2 eV and about 6 eV.
- 10. A semiconductor structure as claimed in claim 9 wherein said dopant comprises a rare earth element.
- 11. A semiconductor structure as claimed in claim 10 wherein said dopant comprises a rare earth luminescent center.
- 12. A semiconductor structure comprising an amorphous alloy formed over at least a portion of a substrate, wherein said amorphous alloy comprises amorphous aluminum nitride (AlN) and amorphous gallium nitride (GaN), is substantially free of carbon, hydrogen, and oxygen, and is characterized by a band gap between about 2 eV and about 6 eV.
- 13. A semiconductor structure as claimed in claim 12 wherein said amorphous alloy is characterized by a band gap between about 3 eV and about 6 eV.
- 14. A semiconductor structure as claimed in claim 12 wherein said amorphous alloy is characterized by the following formula:
- 15. A semiconductor structure as claimed in claim 12 wherein said amorphous alloy further comprises amorphous indium nitride.
- 16. A semiconductor structure as claimed in claim 12 further comprising a dopant incorporated into said amorphous alloy.
- 17. A semiconductor structure as claimed in claim 16 wherein said dopant comprises a rare earth element.
- 18. A semiconductor structure as claimed in claim 17 wherein said dopant comprises a rare earth luminescent center.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation in part of U.S. patent application Ser. No. 09/431,339, filed Oct. 29, 1999.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[0002] This invention was made with government support under Contract No. N00014-96-10782 awarded by Ballistic Missile Defense Organization. The Government has certain rights in this invention.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09431339 |
Oct 1999 |
US |
Child |
10086291 |
Mar 2002 |
US |