1. Field of the Invention
The present invention relates to the generation of extreme ultraviolet radiation. It refers to a beam line for a source of extreme ultraviolet (EUV) radiation.
2. Discussion of Related Art
The next generation of semiconductor devices will be manufactured using extreme ultraviolet (EUV) lithography. EUV light is electromagnetic radiation with wavelengths between 20 nm and 10 nm. In EUV sources, a EUV-emitting plasma is produced by irradiating a target material, e.g., tin (Sn). The radiation exciting the target material can be a laser beam, thus producing a laser produced plasma (LPP). The EUV radiation is collected by a collector optic, e.g., a collimating mirror, and directed to an intermediate region for utilization outside of the EUV light source. Configurations of such EUV sources are shown in documents WO 2006/091948(A1) or WO 2009/025557(A1) or WO 2010/017892(A1), for example.
The problems addressed by the patent and caused by the plasma and debris generation are the following: The focusing lens gets hot and covered by contaminants; this can cause the breaking of the lens. The laser beam that is not absorbed by the targets has to be dumped, in a way that doesn't influence the EUV beam. The connection between the source chamber and the next chamber has to be such that the EUV can go through without any additional absorption, but no particles should go in the next chamber. The contamination has to be avoided.
It is an object of the present invention to create a beam line for a source of extreme ultraviolet (EUV) radiation to manage the light beams in the source chamber in a safe and controllable manner.
This object is obtained by a beam line according to claim 1, which comprises within a vacuum chamber a beam delivery system comprising a focusing lens and means for cooling and shielding said focusing lens; a EUV mirror collector, which collects and focuses the radiated EUV in a EUV beam at an intermediate focus; a beam dump capable of damping at least a portion of the laser beam without imposing a shadow on the collected and focused EUV beam; and being used as a support for radiation-sensitive sensors; and an intermediate focus module for blocking particles from leaving the vacuum chamber with the EUV beam.
The laser beam is brought in the chamber by the light delivery system and it is focused. The radiation that is not used is then absorbed in the beam dump. The EUV that is produced thanks to the focalized laser beam is collected by an ellipsoidal mirror, and is focused in its intermediate focus. The EUV beam in the intermediate focus enters then a module that separates the source vacuum chamber from the next stage, letting the radiation going through without a noticeable increase in the EUV absorption. The intermediate focus module is designed so that the gas in the main chamber cannot enter in the next stage.
An embodiment of the invention is characterized in that the focusing lens is cooled by a fluid supplied from outside the vacuum chamber.
According to another embodiment of the invention the focusing lens is shielded from debris by a gas ejected from the outer border of the focusing lens and directed along the surface of the focusing lens.
According to another embodiment of the invention the focusing lens is cleaned by a gas ejected from the outer border of the focusing lens and directed along the surface of the focusing lens.
According to another embodiment of the invention the gas ejected from the outer border of the focusing lens is being selected from the group containing hydrogen, helium, argon, neon, krypton, xenon, chlorine, fluorine, bromine, and iodine.
According to another embodiment of the gas is a mixture of a plurality of those gases, and/or the gas is ionized.
According to another embodiment of the invention the beam dump is cooled by a fluid, and that the cooling fluid passes through an internal cooling channel provided in a beam dump casing.
According to another embodiment of the invention at least two pipes are connected to the beam dump to assure flow inlet and outlet and hold the beam dump in position.
According to another embodiment of the invention radiation- and/or plasma-sensitive sensors are mounted on a side of the beam dump facing the plasma.
According to another embodiment of the invention the beam dump comprises at least one cone for receiving the laser beam, whereby sensor electronics is stored and protected against radiation in a sensor space behind the at least one cone.
According to another embodiment of the invention the sensors are used for alignment, triggering, and monitoring of the plasma, radiation, and clouding.
According to another embodiment of the invention two cones made of different material are provided within the beam dump, whereby a first cone is made of a high thermal conductive material, and a second cone is placed within the first one and is made of a material with a high melting point.
According to another embodiment of the invention the cooling fluid is selected from a group containing water or oil.
According to another embodiment of the invention the intermediate focus module is shielded from debris and suspended particles by a gas ejection.
According to another embodiment of the invention the intermediate focus module comprises at least three sub chambers, whereby the sub chambers are arranged one within the other as an outer sub chamber, an intermediate sub chamber and an inner sub chamber.
According to another embodiment of the invention a gas is ejected between the outer sub chamber and the intermediate sub chamber, such that it flows primarily in direction of the vacuum chamber.
According to another embodiment of the invention all sub chambers comprise a central hole, and that the hole of the intermediate sub chamber is smaller than the hole of the outer sub chamber.
According to another embodiment of the invention the hole of the intermediate sub chamber can be adjusted along the direction of the EUV beam.
According to another embodiment of the invention the pressure in a space between outer sub chamber and the intermediate sub chamber is higher than the pressure in the vacuum chamber outside of the intermediate focus module, and is higher than the pressure in the space between the intermediate sub chamber and the inner sub chamber), and the pressure in an interface within the inner sub chamber, while the pressure in the space between the inner sub chamber and the intermediate sub chamber is lower than the pressure in the interface within the inner sub chamber.
According to another embodiment of the invention the position of the intermediate focus module can be adjusted, in order to have the focus of the radiation centered within the sub chambers.
According to another embodiment of the invention a, preferably cooled, spectral purity filter is added in the interface within the inner sub chamber, in order to let pass just the radiation of interest.
According to another embodiment of the invention the gas is selected from a group containing hydrogen, helium, argon, neon, krypton, xenon, chlorine, fluorine, bromine, and iodine.
According to another embodiment of the invention the gas is a mixture of a plurality of those gases, and/or the gas is ionized.
According to another embodiment of the invention the EUV mirror collector is part of a beam deflecting system, which comprises at least a focusing mirror, which focuses the deflected radiation in the EUV beam at the intermediate focus.
According to another embodiment of the invention an additional planar deflecting mirror is provided, which deflects a small part of the generated EUV radiation onto the focusing mirror.
According to another embodiment of the invention the beam deflecting system is placed in an enclosure, which is provided with a beam entrance port for the incoming EUV radiation and a beam exit port for releasing the focused EUV beam on its way to the intermediate focus module.
According to another embodiment of the invention the enclosure comprises a first mirror container enclosing the first deflecting mirror, in the distance from the said first mirror container a second mirror container enclosing the second focusing mirror, and a connecting tube for connecting the two mirror containers, such that the EUV beam running from the first mirror to the second mirror and the focused EUV beam running from the second mirror to the beam exit port are enclosed by said connecting tube.
According to another embodiment of the invention the enclosure is mounted on an adjusting plate, which can be rotated in a plane parallel to the plane of the deflected EUV beam.
According to another embodiment of the invention the pressure within the enclosure is higher than the pressure in the surrounding vacuum chamber, such that debris is prevented from entering the beam entrance port of the enclosure.
According to just another embodiment of the invention the focused EUV beam leaves the vacuum chamber in the direction, which is essentially opposite to the direction of the entering laser beam.
According to another embodiment of the invention a higher pressure in the enclosure is achieved by means of at least one gas ejector, which directs ejected gas onto the mirror facing the plasma.
According to another embodiment of the invention the enclosure is provided with a beam entrance part, which is preferably exchangeable, and the hole area and the flow ejection direction of which can preferably be varied.
The present invention is now to be explained more closely by means of different embodiments and with reference to the attached drawings.
The beam line 30 according to
The beam delivery system 2 shown in
The beam delivery system 2 comprises a plurality of concentric tubes, i.e. an outer tube 9, an intermediate tube 10, and an inner tube 11, which reach from the wall of the vacuum chamber 7 to the location of the laser focusing lens 8. The focusing lens 8 is positioned on the axis 34 of the EUV mirror collector 1. A collimated laser beam 5 enters the assembly through the inner tube 11 and is focused to the primary focus (at the plasma generation point 35) of the system by the focusing lens 8. The focusing lens 8 is mounted on the front of the intermediate tube 10 and held in position by a threaded ring 15.
Between the outer tube 9 and the lens carrying intermediate tube 10 a concentric duct is established, which allows a gas suitable for a mitigation of the plasma-induced debris to flow to the front of the focusing lens 8, where it is ejected radially through a convergent-divergent planar nozzle (14, 15) into the vacuum chamber 7 to build up a lens gas curtain 16 (
Positioning devices 12, which are fixed to the vacuum chamber 1 (collector casing) and push the concentric tubes 9, 10 and 11 in radial direction, allow a micro-positioning of the focusing lens 8 on the axis 34 of the EUV mirror collector 1. Distance pieces 13 between the outer tube 9 and the lens carrying intermediate tube 10 transfer this radial motion to the lens 8.
The lens gas curtain 16 for debris mitigation and the cooling gas 17 are injected in between the concentric tubes 9, 10 and 11 at the outside of the vacuum chamber 7 (see
The laser beam 5, after being focused by the beam delivery system 2, irradiates the droplets mentioned before. However, not all of each laser pulse and not every pulse are assumed to be absorbed by the droplets. The part of the laser beam 5 that is not absorbed, continues in his path, diverges, and enters the beam dump 3.
The beam dump 3 (
In the cooled cylindrical beam dump casing 21 a beam dump cone 22, 23 is installed to reflect and absorb the remains of the laser beam 5. The contact area between the cylindrical beam dump casing 21 and the beam dump cone 22, 23 is maximized in order to maximize the heat removed from the cone. The beam dump cone 22, 23 is made out of two different materials: one is used for the outer part (cone 22) in order to optimize heat conduction, while for the tip (cone 23) another material is used in order to maximize the melting point. In a preferred embodiment the material for the outer cone 22 is Aluminum, and the material for the inner cone 23 is Nickel.
On the lip of the cooled cylindrical beam dump casing 21 that faces the plasma, radiation- and/or plasma-sensitive sensors 25 can be mounted. The sensors 25, which are directly cooled, are used for controlling the alignment of the droplets with the beam line and synchronizing of the moving droplets and the laser pulses. Furthermore, the sensors 25 monitor directly the radiation and/or plasma intensity and/or the presence of neutrals (clouding) without imposing a shadow in the EUV beam 6, and without being directly irradiated by the laser beam 5. Behind the cones 22, 23, another space is provided, which is used as a sensor space 26. The sensor space 26 is predisposed to store sensor hardware, to protect it against the incoming laser beam 5. The electrical cable pipe 20, which opens into the sensor space 26, is used to bring the cables of the sensor arrangement out of the beam dump 3. The cooling inlet pipe 18 directly cools the electrical cable pipe 20, since these are in contact (
In a preferred embodiment the beam dump 3 is coated with paint, without carbon, that enhances the absorption of the laser light. In another embodiment no coating is used, so that the chamber and the collector are not contaminated.
The EUV beam 6, after reflection from the multilayer EUV mirror collector 1, is focused to give the intermediate focus of the ellipsoidal collector mirror. At the intermediate focus (IF) the intermediate focus module 4 is integrated in order to prevent ions and neutrals to enter the next stage (not shown in
The intermediate focus module 4 comprises three sub chambers 27, 28 and 29, which are contained one within the other, and are each provided with a central opening or hole. A gas is injected between the outer sub chamber 27 and the intermediate sub chamber 28, and is ejected mainly into the vacuum chamber 7. In order to minimize the amount of gas that flows in the space 32 between the intermediate sub chamber 28 and the inner sub chamber 29, the hole in the intermediate sub chamber 28 is smaller than the hole in the outer sub chamber 27. In order to have the hole in the intermediate sub chamber 28 as small as possible, in a preferred embodiment the hole is placed just in the position of the intermediate focus IF. The small amount of gas that goes through the hole in the intermediate sub chamber 28 is then sucked away between the intermediate sub chamber 28 and the inner sub chamber 29, where the pressure is the lowest in the system. This pressure is also smaller compared with the pressure inside the inner sub chamber 29, where there is the interface 33 with the next stage. This leads to a small flux that exits the inner sub chamber 29, and thus prevents any particles to enter.
The pressures in the spaces 31, 32 and 33 between the sub chambers should be chosen as follows: the pressure in space 31 is higher than the pressure in the vacuum chamber 30 and the space 32; the pressure in space 32 is lower than the pressure in the interface 33, space 31, and the vacuum chamber 7. The pressure in the interface 33 is generally lower than the pressure in the vacuum chamber 7. But in another embodiment it can be also the opposite. This configuration permits to have a flow circulating as represented in
In a preferred embodiment the order of magnitude of the values for the pressure can be chosen as follows: in the vacuum chamber 7: 0.1 mbar; in space 31: 1 mbar; in space 32: 10−6 mbar or lower, if a pressure lower than 10−6 mbar is required in the interface 33. In the interface 33 the pressure value depends on the next stage, and is for example 10−4 mbar. In the EUV path the pressure remains high just for a minimum length; therefore the intermediate focus module 4 doesn't noticeably increase the EUV absorption.
The position of the central hole of the intermediate sub chamber 28 can be controlled. In another embodiment, the position of this hole is moved to a place after the intermediate focus IF, and the hole has a larger diameter, large enough to let the diverging EUV radiation go through.
In the interface 33, clean from contamination, a spectral purity filter 36 can be placed. The spectral purity filter is directly cooled, where a cooling means 37 works through conduction on the side and/or through convection on the surface. In a preferred embodiment the spectral purity filter comprises a Zr film.
The gas used for the intermediate focus module 4 and for the lens debris mitigation is chosen from a variety of different gases, in neutral or ionic state, including: hydrogen, helium, argon, neon, krypton, xenon, chlorine, fluorine, bromine, and iodine. The gas can also be a mixture of the listed gases.
Different from the arrangement shown in
The enclosure for the beam deflecting system 44 is necessary to keep a pressure inside, which is a little bit higher than in the surrounding vacuum chamber 38, so that a suitable gas as specified before can flow from inside the enclosure through the beam entrance port 43 into the vacuum chamber 38 to protect the first mirror 49 against the degrading effects of the debris.
The enclosure has a simple and stable construction, and it is designed to give easy access to the mirrors 49 and 50, so that the mirrors can be easily adjusted or replaced in case of damage. The enclosure comprises a first cylindrical mirror container 45 containing the first mirror 49, and a second cylindrical mirror container 47 containing the second mirror 50. Both containers 45 and 47 are connected by a cylindrical connecting to 46. The connecting tube 46 is designed such that the EUV beam running from the first mirror 49 to the second mirror 50 and the focused EUV beam 55 running from the second mirror 50 to the beam exit port 48 are enclosed by said connecting tube 46. The enclosure is placed on an adjusting plate 57, which is repeatedly supported by a fixed base plate 58 such that it can be rotated in a plane parallel to the plane of the deflected EUV beam 55.
The containers 45 and 47 of the enclosure are each closed by a detachable lid, so that there is an easy access to the mirrors inside.
Due to the special beam forming system of the second embodiment the resulting EUV source has a high brightness instead of a high power. Thus, the characteristics and advantages of this embodiment are:
Different from the arrangement shown in
The enclosure 66 for the beam deflecting system is necessary to keep a pressure inside, which is higher than in the surrounding vacuum chamber, so that a suitable stream of gas as specified before can flow from inside the enclosure 66 through the beam entrance port 61 into the surrounding vacuum chamber to protect the mirror 64 against the degrading effects of the debris.
At the exit of the enclosure 66 the flow is choked, which leads to a locally larger density. The converging part of the beam entrance part 61 that ends with the ejection hole can be exchangeable. One configuration of the converging-diverging part 61 is to have an ejection in the direction of the plasma; another one is to have the hole with an elliptical shape, so that the flow is directed with an angle. A gas ejector 67 enters the enclosure 66 and directs ejected gas 68 onto the mirror 64.
A shutter 62 may be implemented in the system to be able to protect the mirror in case of problems.
Number | Date | Country | Kind |
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10003197.0 | Mar 2010 | EP | regional |
10009339.2 | Sep 2010 | EP | regional |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP2011/001303 | 3/16/2011 | WO | 00 | 2/5/2013 |