Claims
- 1. A chemical-mechanical polishing system comprising:
(a) an abrasive and/or polishing pad, (b) boric acid, or a conjugate base thereof, and (c) an aqueous carrier, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer.
- 2. The chemical-mechanical polishing system of claim 1, wherein the abrasive is a metal oxide.
- 3. The chemical-mechanical polishing system of claim 2, wherein the abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, co-formed products thereof, and combinations thereof.
- 4. The chemical-mechanical polishing system of claim 3, wherein the abrasive is alumina or silica.
- 5. The chemical-mechanical polishing system of claim 1, wherein the abrasive is fixed on a polishing pad.
- 6. The chemical-mechanical polishing system of claim 1, wherein the abrasive is in particulate form and is suspended in the carrier.
- 7. The chemical-mechanical polishing system of claim 1, wherein the carrier is water.
- 8. The chemical-mechanical polishing system of claim 1, wherein the system further comprises an oxidizing agent.
- 9. The chemical-mechanical polishing system of claim 8, wherein the oxidizing agent is a peroxide or persulfate.
- 10. The chemical-mechanical polishing system of claim 1, wherein the system further comprises a film-forming agent.
- 11. The chemical-mechanical polishing system of claim 10, wherein the film-forming agent is an azole.
- 12. The chemical-mechanical polishing system of claim 1, wherein the system comprises about 0.5 wt. % or more carrier-suspended abrasive particles, about 0.01 wt. % or more boric acid or conjugate base thereof, and water.
- 13. The chemical-mechanical polishing system of claim 1, wherein the system further comprises a complexing agent.
- 14. A chemical-mechanical polishing system comprising:
(a) an abrasive and/or polishing pad, (b) an aqueous carrier, and (c) a water-soluble boron-containing compound that is not boric acid, or salt thereof, formula I-VII: 2wherein, R1, R2, R3, R5, R6, R9, R14, R18, R19, R22, R23, and R24 are independently selected from the group consisting of H, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl, R4, R7, R8, R10, R11, R12, R13, R15, R16, R17, R20, R21, and R25 are independently selected from the group consisting of H, halide, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl, any two R substituents of a formula can be linked through 1-16 atoms selected from the group consisting of C, N, O, and S to form a cyclic ring, and R1-R25 are optionally substituted with 1-5 substituents independently selected from the group consisting of halide, C1-20 alkyl, C1-20 alkoxy, thio(C1-20)alkyl, C6-30 aryl including polycyclic aryl, C6-30 ar(C1-20)alkyl, C6-30 ar(C1-20)alkoxy, thio(C6-30)aryl, cyclo(C1-20)alkyl, cyclo(C3-20)alkyloxy, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, heterocyclo(C3-20)alkyloxy, C2-20 alkenyl, C2-20 alkynyl, B(OH)(C1-20 alkyl), B(OH)(cyclo(C1-20)alkyl), B(OH)(C6-30 aryl), B(OH)(C6-30 heteroaryl), B(OH)2, thiol, hydroxy, halo(C1-20)alkyl, halo(C1-20)alkoxy, nitro, amino, C1-20 alkylamino, di(C1-20)alkylamino, amino(C1-20)alkyl, C1-20alkylamino(C1-20)alkyl, nitrile, cyano, carbonyl, C1-20 alkylcarbonyl, carboxy, carboxy(C1-20)alkyl, silyl, and siloxy.
- 15. The chemical-mechanical polishing system of claim 14, wherein the water-soluble boron-containing compound is a trialkylborate.
- 16. The chemical-mechanical polishing system of claim 14, wherein the water-soluble boron-containing compound is a borinic acid, boronic acid, borinate ester, or boronate ester.
- 17. The chemical-mechanical polishing system of claim 14, wherein the water-soluble boron-containing compound is a benzodioxaborole compound.
- 18. The chemical-mechanical polishing system of claim 17, wherein the water-soluble boron-containing compound is B-bromocatecholborane.
- 19. The chemical-mechanical polishing system of claim 14, wherein the water-soluble boron-containing compound is a tetraarylborate salt.
- 20. The chemical-mechanical polishing system of claim 14, wherein the water-soluble boron-containing compound is generated in situ.
- 21. The chemical-mechanical polishing system of claim 14, wherein the abrasive is a metal oxide.
- 22. The chemical-mechanical polishing system of claim 21, wherein the abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, co-formed products thereof, and combinations thereof.
- 23. The chemical-mechanical polishing system of claim 22, wherein the abrasive is alumina or silica.
- 24. The chemical-mechanical polishing system of claim 14, wherein the abrasive is fixed on a polishing pad.
- 25. The chemical-mechanical polishing system of claim 14, wherein the abrasive is in particulate form and is suspended in the carrier.
- 26. The chemical-mechanical polishing system of claim 14, wherein the carrier is water.
- 27. The chemical-mechanical polishing system of claim 14, wherein the system further comprises an oxidizing agent.
- 28. The chemical-mechanical polishing system of claim 27, wherein the oxidizing agent is a peroxide or persulfate.
- 29. The chemical-mechanical polishing system of claim 14, wherein the system further comprises a film-forming agent.
- 30. The chemical-mechanical polishing system of claim 29, wherein the film-forming agent is an azole.
- 31. The chemical-mechanical polishing system of claim 14, wherein the system comprises about 0.5 wt. % or more carrier-suspended abrasive particles, about 0.01 wt. % or more water-soluble boron-containing compound or salt thereof, and water.
- 32. The chemical-mechanical polishing system of claim 31, wherein the abrasive particles are alumina or silica particles, and the water-soluble boron-containing compound is a trialkylborate, borinic acid, boronic acid, borinate ester, or boronate ester.
- 33. The chemical-mechanical polishing system of claim 14, wherein the system further comprises a complexing agent.
- 34. A method of polishing a substrate comprising:
(i) contacting a substrate with a chemical-mechanical polishing system comprising:
(a) an abrasive and/or polishing pad, (b) boric acid, or conjugate base thereof, and (c) an aqueous carrier, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, and (ii) abrading at least a portion of the substrate to polish the substrate.
- 35. The method of claim 34, wherein the substrate comprises a metal oxide layer and a metal layer.
- 36. The method of claim 35, wherein the metal layer comprises copper, tungsten, tantalum, or titanium.
- 37. A method of polishing a substrate comprising:
(i) contacting a substrate with a chemical-mechanical polishing system comprising:
(a) an abrasive and/or polishing pad, (b) an aqueous carrier, and (c) a water-soluble boron-containing compound that is not boric acid, or salt thereof, of formula I-VII: 3wherein, R1, R2, R3, R5, R6, R9, R14, R18, R19, R22, R23, and R24 are independently selected from the group consisting of H, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl, R4, R7, R8, R10, R11, R12, R13, R15, R16, R17, R20, R21, and R25 are independently selected from the group consisting of H, halide, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl, any two R substituents of a formula can be linked through 1-16 atoms selected from the group consisting of C, N, O, and S to form a cyclic ring, and R1-R25 are optionally substituted with 1-5 substituents independently selected from the group consisting of halide, C1-20 alkyl, C1-20 alkoxy, thio(C1-20)alkyl, C6-30 aryl including polycyclic aryl, C6-30 ar(C1-20)alkyl, C6-30 ar(C1-20)alkoxy, thio(C6-30)aryl, cyclo(C1-20)alkyl, cyclo(C3-20)alkyloxy, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, heterocyclo(C3-20)alkyloxy, C2-20 alkenyl, C2-20 alkynyl, B(OH)(C1-20 alkyl), B(OH)(cyclo(C1-20)alkyl), B(OH)(C6-30 aryl), B(OH)(C6-30 heteroaryl), B(OH)2, thiol, hydroxy, halo(C1-20)alkyl, halo(C1-20)alkoxy, nitro, amino, C1-20 alkylamino, di(C1-20)alkylamino, amino(C1-20)alkyl, C1-20alkylamino(C1-20)alkyl, nitrile, cyano, carbonyl, C1-20 alkylcarbonyl, carboxy, carboxy(C1-20)alkyl, silyl, and siloxy, and (ii) abrading at least a portion of the substrate to polish the substrate.
- 38. The method of claim 37, wherein the substrate comprises a metal oxide layer and a metal layer.
- 39. The method of claim 38, wherein the metal layer comprises copper, tungsten, tantalum, or titanium.
- 40. The method of claim 37, wherein the water-soluble boron-containing compound is trialkylborate.
- 41. The method of claim 37, wherein the water-soluble boron-containing compound is a borinic acid, boronic acid, borinate ester, or boronate ester.
- 42. The method of claim 37, wherein the water-soluble boron-containing compound is a benzodioxoborole compound.
- 43. The method of claim 42, wherein the water-soluble boron-containing compound is B-bromocatecholborane.
- 44. The method of claim 37, wherein the water-soluble boron-containing compound is a tetraarylborate salt.
CROSS-REFERENCE TO RELATED PATENT APPLICATIONS
[0001] This patent application is a continuation of copending U.S. patent application Ser. No. 10/033,152, filed Oct. 24, 2001.
Continuations (1)
|
Number |
Date |
Country |
Parent |
10033152 |
Oct 2001 |
US |
Child |
10801316 |
Mar 2004 |
US |