Claims
- 1. A capacitor dielectric structure, comprising:
a silicon nitride layer on a semiconductor silicon substrate; and an oxynitride layer on the silicon layer.
- 2. The capacitor dielectric structure as claimed in claim 1, wherein the semiconductor silicon substrate comprises at least a deep trench, and the silicon nitride layer is formed on the sidewall and bottom of the deep trench.
- 3. The capacitor dielectric structure as claimed in claim 1, wherein the thickness of the silicon nitride layer is 30˜50 Å.
- 4. The capacitor dielectric structure as claimed in claim 1, wherein the thickness of the oxynitride layer is 230˜270 Å.
- 5. The capacitor dielectric structure as claimed in claim 1, wherein the capacitor dielectric structure is used for a deep trench capacitor or a stacked capacitor in DRAM device.
- 6. A method of forming a capacitor dielectric structure, comprising steps of:
providing a semiconductor silicon substrate; using silicon nitride deposition to form a silicon nitride layer on the semiconductor silicon substrate; using an oxynitride process with wet oxidation and N2O reactive gas to form an oxynitride layer on the silicon nitride layer; and performing a post oxynitride growth annealing on the oxynitride layer.
- 7. The method of forming a capacitor dielectric structure as claimed in claim 6, wherein the semiconductor silicon substrate comprises at least a deep trench, and the silicon nitride layer is formed on the sidewall and bottom of the deep trench.
- 8. The method of forming a capacitor dielectric structure as claimed in claim 6, wherein the capacitor dielectric structure is used for a deep trench capacitor or a stacked capacitor in DRAM device.
- 9. The method of forming a capacitor dielectric structure as claimed in claim 6, further comprising a step of pre-cleaning the semiconductor silicon substrate before the step of using silicon nitride deposition.
- 10. The method of forming a capacitor dielectric structure as claimed in claim 6, wherein the thickness of the silicon nitride layer is 30˜50 Å.
- 11. The method of forming a capacitor dielectric structure as claimed in claim 6, wherein in the oxynitride process, the process temperature is 800˜1000□, the process time is 50˜90 minutes, the pressure is 1 atmosphere, and the gas flow rate of N2O is 2000˜4000 sccm.
- 12. The method of forming a capacitor dielectric structure as claimed in claim 6, wherein the thickness of the oxynitride layer is 230˜270 Å.
- 13. The method of forming a capacitor dielectric structure as claimed in claim 6, wherein the post oxynitride growth annealing is a N2O treatment at a temperature the same as the oxynitride process temperature.
Priority Claims (1)
Number |
Date |
Country |
Kind |
91113348 |
Jun 2002 |
TW |
|
Parent Case Info
[0001] This application is CIP patent application of U.S. patent application Ser. No. 10/214,191.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10214191 |
Aug 2002 |
US |
Child |
10376230 |
Mar 2003 |
US |