Claims
- 1. A method of forming a capacitor dielectric structure, comprising steps of:providing a semiconductor silicon substrate; using silicon nitride deposition to form a silicon nitride layer on the semiconductor silicon substrate; using an oxynitride process with wet oxidation and N2O reactive gas to form an oxynitride layer on the silicon nitride layer; and performing a post oxynitride growth annealing on the oxynitride layer.
- 2. The method of forming a capacitor dielectric structure as claimed in claim 1, wherein the semiconductor silicon substrate comprises at least a deep trench, and the silicon nitride layer is formed on the sidewall and bottom of the deep trench.
- 3. The method of forming a capacitor dielectric structure as claimed in claim 1, wherein the capacitor dielectric structure is used for a deep trench capacitor or a stacked capacitor in DRAM device.
- 4. The method of forming a capacitor dielectric structure as claimed in claim 1, further comprising a step of pre-cleaning the semiconductor silicon substrate before the step of using silicon nitride deposition.
- 5. The method of forming a capacitor dielectric structure as claimed in claim 1, wherein the thickness of the silicon nitride layer is 30˜50 Å.
- 6. The method of forming a capacitor dielectric structure as claimed in claim 1, wherein in the oxynitride process, the process temperature is 800˜1000□, the process time is 50˜90 minutes, the pressure is 1 atmosphere, and the gas flow rate of N2O is 2000˜4000 sccm.
- 7. The method of forming a capacitor dielectric structure as claimed in claim 1, wherein the thickness of the oxynitride layer is 230˜270 Å.
- 8. The method of forming a capacitor dielectric structure as claimed in claim 1, wherein the post oxynitride growth annealing is a N2O treatment at a temperature the same as the oxynitride process temperature.
Priority Claims (1)
Number |
Date |
Country |
Kind |
91113348 A |
Jun 2002 |
TW |
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Parent Case Info
This application is CIP patent application of U.S. patent application Ser. No. 10/214,191 filed Aug. 8, 2002 now U.S. Pat. No. 6,569,731.
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
10/214191 |
Aug 2002 |
US |
Child |
10/376230 |
|
US |