Ceramic article with reduced surface defect density

Information

  • Patent Grant
  • 10336656
  • Patent Number
    10,336,656
  • Date Filed
    Wednesday, April 15, 2015
    9 years ago
  • Date Issued
    Tuesday, July 2, 2019
    4 years ago
Abstract
A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness.
Description
TECHNICAL FIELD

Embodiments of the present invention relate, in general, to a heat treatment process that minimizes surface defect density and ceramic articles processed using a heat treatment process.


BACKGROUND

In the semiconductor industry, devices are fabricated by a number of manufacturing processes producing structures of an ever-decreasing size. Some manufacturing processes such as plasma etch and plasma clean processes expose a substrate to a high-speed stream of plasma to etch or clean the substrate. The plasma may be highly corrosive, and may corrode processing chambers and other surfaces that are exposed to the plasma. This corrosion may generate particles, which frequently contaminate the substrate that is being processed, contributing to device defects.


As device geometries shrink, susceptibility to defects increases, and particle contaminant requirements become more stringent. Accordingly, as device geometries shrink, allowable levels of particle contamination may be reduced. To minimize particle contamination introduced by plasma etch and/or plasma clean processes, chamber materials have been developed that are resistant to plasmas. Examples of such plasma resistant materials include ceramics composed to Al2O3, AlN, SiC and Y2O3. However, the plasma resistance properties of these ceramic materials may be insufficient for some applications. For example, plasma resistant ceramic lids and/or nozzles that are manufactured using traditional ceramic manufacturing processes may produce unacceptable levels of particle contamination when used in plasma etch processes of semiconductor devices with critical dimensions of 45 nm or 32 nm.


SUMMARY

In one embodiment, a ceramic article having an initial surface defect density and an initial surface roughness is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate. After the heat treatment, the ceramic article has a reduced surface defect density and a reduced surface roughness, and may additionally have a greater resistance to plasma.





BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that different references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.



FIG. 1A illustrates an exemplary architecture of a manufacturing system, in accordance with one embodiment of the present invention;



FIG. 1B illustrates a process for heat treating a ceramic article, in accordance with one embodiment of the present invention;



FIG. 2A shows micrographs of a ceramic article at a 10,000-fold magnification before the ceramic article is processed using a heat treatment, and after the ceramic article has been processed using heat treatments of various temperatures, in accordance with embodiments of the present invention;



FIG. 2B shows micrographs of an HPM composite ceramic article at a 4,000-fold magnification before the ceramic article is processed using a heat treatment, and after the ceramic article has been processed using heat treatments of various temperatures, in accordance with embodiments of the present invention;



FIG. 3A illustrates surface profiles of the ceramic articles of FIGS. 2A-2B before and after the heat treatment, in accordance with one embodiment of the present invention;



FIG. 3B illustrates a phase composition comparison of an HPM ceramic composite before heat treatment, after a 1200° C. heat treatment and after a 1680° C. heat treatment;



FIG. 4A shows micrographs of a solid yttria ceramic article at a 10,000-fold magnification before and after the solid yttria ceramic article is processed using a heat treatment, in accordance with one embodiment of the present invention;



FIG. 4B shows micrographs of a solid yttrium oxide ceramic article at a 4,000-fold magnification before and after the solid yttrium oxide ceramic article is processed using the heat treatment, in accordance with one embodiment of the present invention;



FIG. 5 illustrates surface profiles of the solid yttrium oxide ceramic article of FIGS. 4A-4B before and after the heat treatment, in accordance with one embodiment of the present invention;



FIG. 6 illustrates surface particle count of an HPM composite ceramic before and after heat treatment, in accordance with one embodiment of the present invention; and



FIG. 7 illustrates surface particle count (in thousands of particles) of an HPM composite ceramic before heat treatment and during heat treatment at various temperatures, in accordance with embodiments of the present invention.





DETAILED DESCRIPTION OF EMBODIMENTS

Embodiments of the invention are directed to a process for heat treating a ceramic article, and to a ceramic article processed using the heat treatment. In one embodiment, a ceramic article having an initial surface defect density and an initial surface roughness is provided. The ceramic article may be a hot pressed or sintered ceramic article that has been machined (e.g., that has been polished, ground, had holes drilled in it, etc.). The ceramic article may also be a hot pressed or sintered ceramic article that has not been machined. The ceramic article may be, for example, a ceramic lid or nozzle for a plasma etcher (also known as a plasma etch reactor). The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate. After the heat treatment, the ceramic article has a reduced surface defect density and a reduced surface roughness, and may additionally have a greater resistance to plasma. Moreover, dimensions of the ceramic article may experience little to no change as a result of the heat treatment.


In one embodiment, a furnace performs a heat treatment process on a ceramic article having an initial surface defect and an initial surface roughness. The furnace heats the ceramic article at a ramping rate of about 0.1° C. per minute to about 20° C. per minute until the ceramic article reaches a specified temperature or temperature range. The specified temperature range may vary from about 1000° C. to about 1800° C., and the specified temperature may be a temperature within the specified temperature range. The furnace heat treats the ceramic article at the specified temperature and/or other specified temperatures within the temperature range for a duration of up to about 24 hours. The furnace then cools the ceramic article at the ramping rate. After the heat treatment, the ceramic article has a reduced surface defect density and a reduced surface roughness, and may additionally have a greater resistance to plasma.


Embodiments of the invention reduce the surface roughness and surface defect density of processed ceramic articles, and minimize surface particles on the ceramic articles. Such heat treated ceramic articles have a reduced number of high energy bonds (broken bonds), and may produce a significantly lower amount of particle contamination when used in semiconductor processes that apply plasmas (e.g., plasma etch and plasma clean processes). For example, ceramic lids and nozzles for etcher machines may be heat treated to minimize particle contamination introduced during plasma etch processes. Thus, semiconductors manufactured using the heat treated ceramic articles described herein may have a lower defect count and may result in reduced scrap rates.


The term “heat treating” is used herein to mean applying an elevated temperature to a ceramic article, such as by a furnace. The term “machined ceramic article” refers to a ceramic article that has been surface ground, polished, drilled, abraded, cut, or otherwise processed with machine tools. When the terms “about” and “approximate” are used herein, this is intended to mean that the nominal value presented is precise within ±10%.


Some embodiments are described herein with reference to using a furnace to perform a heat treatment. However, it should be understood that other heat treatment techniques may also be used to perform the described heat treatment. Some examples of additional heat treatment techniques that may be used include a laser surface treatment (also referred to as laser heat treatment), an electron beam (e-beam) surface treatment (also referred to as e-beam heat treatment), a flame surface treatment (also referred to as a flame heat treatment), and a high temperature plasma treatment.


Note also that some embodiments are described herein with reference to ceramic lids and ceramic nozzles used in plasma etchers for semiconductor manufacturing. However, it should be understood that such plasma etchers may also be used to manufacture micro-electro-mechanical systems (MEMS)) devices. Additionally, the heat treated ceramic articles described herein may be other structures that are exposed to plasma. For example, the ceramic articles may be rings, walls, bases, gas distribution plates, shower heads, substrate holding frames, etc. of a plasma etcher, a plasma cleaner, a plasma propulsion system, and so forth. Moreover, embodiments are described herein with reference to ceramic articles that cause reduced particle contamination when used in a process chamber for plasma rich processes. However, it should be understood that the ceramic articles discussed herein may also provide reduced particle contamination when used in process chambers for other processes such as plasma enhanced chemical vapor deposition (PECVD), plasma enhanced physical vapor deposition (PEPVD), plasma enhanced atomic layer deposition (PEALD), and so forth, and non-plasma etchers, non-plasma cleaners, chemical vapor deposition (CVD) furnaces, physical vapor deposition (PVD) furnaces, and so forth.



FIG. 1A illustrates an exemplary architecture of a manufacturing system, in accordance with one embodiment of the present invention. The manufacturing system 100 may be a ceramics manufacturing system. In one embodiment, the manufacturing system 100 includes a furnace 105 (e.g., a ceramic furnace such as a kiln), an equipment automation layer 115 and a computing device 120. In alternative embodiments, the manufacturing system 100 may include more or fewer components. For example, the manufacturing system 100 may include only the furnace 105, which may be a manual off-line machine.


Furnace 105 is a machine designed to heat articles such as ceramic articles. Furnace 105 includes a thermally insulated chamber, or oven, capable of applying a controlled temperature on articles (e.g., ceramic articles) inserted therein. In one embodiment, the chamber is hermitically sealed. Furnace 105 may include a pump to pump air out of the chamber, and thus to create a vacuum within the chamber. Furnace 105 may additionally or alternatively include a gas inlet to pump gasses (e.g., inert gasses such as Ar or N2) into the chamber.


Furnace 105 may be a manual furnace having a temperature controller that is manually set by a technician during processing of ceramic articles. Furnace 105 may also be an off-line machine that can be programmed with a process recipe. The process recipe may control ramp up rates, ramp down rates, process times, temperatures, pressure, gas flows, and so on. Alternatively, furnace 105 may be an on-line automated furnace that can receive process recipes from computing devices 120 such as personal computers, server machines, etc. via an equipment automation layer 115. The equipment automation layer 115 may interconnect the furnace 105 with computing devices 120, with other manufacturing machines, with metrology tools and/or other devices.


The equipment automation layer 115 may include a network (e.g., a location area network (LAN)), routers, gateways, servers, data stores, and so on. Furnace 105 may connect to the equipment automation layer 115 via a SEMI Equipment Communications Standard/Generic Equipment Model (SECS/GEM) interface, via an Ethernet interface, and/or via other interfaces. In one embodiment, the equipment automation layer 115 enables process data (e.g., data collected by furnace 105 during a process run) to be stored in a data store (not shown). In an alternative embodiment, the computing device 120 connects directly to the furnace 105.


In one embodiment, furnace 105 includes a programmable controller that can load, store and execute process recipes. The programmable controller may control temperature settings, gas and/or vacuum settings, time settings, etc. of heat treat processes. The programmable controller may control a chamber heat up, may enable temperature to be ramped down as well as ramped up, may enable multi-step heat treating to be input as a single process, and so forth. The programmable controller may include a main memory (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM), static random access memory (SRAM), etc.), and/or a secondary memory (e.g., a data storage device such as a disk drive). The main memory and/or secondary memory may store instructions for performing heat treatment processes described herein.


The programmable controller may also include a processing device coupled to the main memory and/or secondary memory (e.g., via a bus) to execute the instructions. The processing device may be a general-purpose processing device such as a microprocessor, central processing unit, or the like. The processing device may also be a special-purpose processing device such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), network processor, or the like. In one embodiment, programmable controller is a programmable logic controller (PLC).


In one embodiment, furnace 105 is programmed to execute a recipe that will cause the furnace 105 to heat treat a machined ceramic article using a heat treatment process described with reference to FIG. 1B.



FIG. 1B is a flow chart showing a process 150 for heat treating a ceramic article, in accordance with one embodiment of the present invention. At block 155 of process 150, a machined ceramic article is provided (e.g., to a furnace or kiln). In one embodiment, the ceramic article is automatically loaded into a furnace by a loader. The ceramic article may be formed from a bulk ceramic such as Y2O3 (yttria or yttrium oxide), Y4Al2O9 (YAM), Al2O3 (alumina) Y3Al5O12 (YAG), YAlO3 (YAP), Quartz, SiC (silicon carbide) Si3N4 (silicon nitride) Sialon, AlN (aluminum nitride), AlON (aluminum oxynitride), TiO2 (titania), ZrO2 (zirconia), TiC (titanium carbide), ZrC (zirconium carbide), TiN (titanium nitride), TiCN (titanium carbon nitride) Y2O3 stabilized ZrO2 (YSZ), and so on. The ceramic article may also be a ceramic composite such as Y3Al5O12 distributed in Al2O3 matrix, Y2O3—ZrO2 solid solution or a SiC—Si3N4 solid solution. The ceramic article may also be a ceramic composite that includes a yttrium oxide (also known as yttria and Y2O3) containing solid solution. For example, the ceramic article may be a high performance material (HPM) that is composed of a compound Y4Al2O9 (YAM) and a solid solution Y2-xZrxO3 (Y2O3—ZrO2 solid solution). Note that pure yttrium oxide as well as yttrium oxide containing solid solutions may be doped with one or more of ZrO2, Al2O3, SiO2, B2O3, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, or other oxides.


The ceramic article may be a sintered ceramic article that was produced from a ceramic powder or a mixture of ceramic powders. For example, the HPM ceramic composite may be produced from a mixture of a Y2O3 powder, a ZrO2 powder and an Al2O3 powder. In one embodiment, the HPM ceramic composite contains 77% Y2O3, 15% ZrO2 and 8% Al2O3. In another embodiment, the HPM ceramic composite contains 63% Y2O3, 23% ZrO2 and 14% Al2O3. In still another embodiment, the HPM ceramic composite contains 55% Y2O3, 20% ZrO2 and 25% Al2O3. Relative percentages may be in molar ratios. For example, the HPM ceramic composite may contain 77 mol % Y2O3, 15 mol % ZrO2 and 8 mol % Al2O3. Other distributions of these ceramic powders may also be used for the HPM material.


If a mixture of ceramic powders was used to create the ceramic article, these powders may have been combined into a granular powder by spray drying. The granular powder may have subsequently been compacted by unidirectional mechanical pressing or cold isostatic pressing prior to performing a hot pressing or sintering process. The sintering process typically changes the size of the ceramic article by an uncontrolled amount. Due at least in part to this change in size, the ceramic article is typically machined after the sintering process is completed. The machining may include surface grinding and/or polishing the ceramic article, drilling holes in the ceramic article, cutting and/or shaping the ceramic article, and so forth.


The ceramic article is machined into a configuration that is appropriate for a particular application. Prior to machining, the ceramic article may have a rough shape and size appropriate for a particular purpose (e.g., to be used as a lid in a plasma etcher). However, the machining may be performed to precisely control size, shape, dimensions, hole sizes, and so forth of the ceramic article.


In one embodiment, the ceramic article is machined into a ceramic lid or a ceramic nozzle for a plasma etcher. The ceramic lid and ceramic nozzle in one embodiment are yttria dominant ceramics. Yttria dominant ceramics may be used due to the superior plasma resistance properties. In one embodiment, the ceramic nozzle is pure yttria (Y3O2), and the ceramic lid is the HPM ceramic composite. The HPM ceramic composite may have improved flexural strength over pure Y2O3. Since the ceramic lid has a large surface area, the HPM ceramic composite may be used for the ceramic lid to prevent cracking or buckling during processing (e.g., when a vacuum is applied to a process chamber of the plasma etcher). In an alternative embodiment, the ceramic lid and the ceramic nozzle are composed of the same ceramic substance. For example, both the ceramic lid and the ceramic nozzle may be formed of the HPM ceramic composite.


The sintering process may result in the ceramic article having a certain roughness, surface defect density and/or quantity of trapped particles. The surface roughness and/or surface defect density may be made worse by the machining process. Moreover, the machining process can generate a large number of surface particles that adhere to the ceramic article.


For ceramic articles that are components of a semiconductor processing device (e.g., an etcher) that will be used for a plasma process, the increased surface roughness, surface defect density and/or surface particles may cause particle contamination to processed substrates. For example, surface defects in the ceramic article may include broken (or open) bonds that are high energy locations. These surface defects may trap particles. For example, the particles may form weak broken bonds with the ceramic article at the surface defect. During a plasma treatment, the plasma may break these weak broken bonds, and remove some of the particles from the ceramic article. The ceramic particles may then be deposited on a processed substrate. Moreover, the plasma may break bonds of the ceramic article at the defect sites, which may erode the ceramic article and cause additional particles to be created.


At block 160, the ceramic article is heated at a ramping rate of about 0.1° C. to about 20° C. per minute. Ceramic articles may be fragile, and may crack when exposed to extreme changes in temperature. Accordingly, a ramping rate that is slow enough to prevent the ceramic article from cracking is used. It is expected that for some ceramics a ramping rate of more than 20° C. per minute may be possible. Accordingly, in some embodiments, ramping rates beyond 20° C. per minute that do not cause cracking may be used.


The temperature changes that cause a ceramic article to crack may depend on the composition of the ceramic article. For example, Al2O3 may be heated at a rate of 10° C. per minute or more without cracking. However, Y2O3 may crack if heated at a ramping rate that is faster than about 5° C. per minute. In one embodiment, a ramping rate of about 0.1-5° C. per minute is used for Y2O3 and for the HPM ceramic composite. In a further embodiment, a ramping rate of about 1° C. per minute is used for Y2O3 and for the HPM ceramic composite. Typically, the ceramic article will start at or near ambient temperature, and will slowly be heated at the ramping rate to a predetermined temperature.


The ceramic article is heated until it reaches a specified temperature or temperature range. The specified temperature may range from about 1000° C. to about 1800° C. The specific temperature used may depend on the composition of the ceramic article. In one embodiment, a temperature of 1600-1700° C. is used for the HPM ceramic composite and for yttria (Y2O3).


At block 165, the ceramic article is heat treated at the specified temperature or at one or more temperatures within the temperature range for a duration of up to 24 hours. The specific duration used may depend on a composition of the ceramic article, as well as desired performance properties of the ceramic article. For example, an increased heat treatment duration may cause the ceramic article to produce fewer particle contaminants than a shorter heat treatment duration. In one embodiment, the heat treatment duration is about 3-6 hours for yttria and for the HPM ceramic composite. In one embodiment, the heat treatment duration is about 4 hours for yttria and for the HPM ceramic composite.


In one embodiment, the ceramic article is maintained at a single temperature for the duration of the heat treatment. Alternatively, the ceramic article may be heated and/or cooled to multiple different temperatures within the temperature range during the heat treatment. For example, the ceramic article may be heat treated at a temperature of 1500° C. for 4 hours, may then be heat treated to a temperature of 1700° C. for another 2 hours, and may then be heat treated at 1000° C. for another three hours. Note that when multiple different heat treatment temperatures are used, the ceramic article may be heated and/or cooled at the ramping rate to transition between heat treatment temperatures.


As discussed above, the ceramic article may have a high number of surface defects and particles that are trapped by these surface defects. The heat treatment may reduce or eliminate these defects and/or particles. Specifically, the heat treatment may cause the particles to melt and/or may cause a portion of the ceramic article to melt at the surface defect regions. The melted particles may flow together with the ceramic article at the surface defect regions. The melted particles may then redeposit onto the ceramic article and form unbroken bonds with the ceramic article at these surface defect regions. The resultant unbroken bonds are much stronger than the broken bonds that previously bound the particles to the ceramic article. Thus, the particles become much less susceptible to being removed from the ceramic article during a plasma etch process, and the defect regions become less susceptible to erosion.


At block 170, the ceramic article is cooled at the ramping rate. In one embodiment, the ceramic article is cooled at the same ramping rate as the ramping rate used to heat the ceramic article. In another embodiment, a different ramping rate is used to cool the ceramic article than was used to heat the ceramic article. The resultant heat treated ceramic article may have improved performance with regards to both particle contamination of processed substrates and with regards to plasma erosion resistance. Thus, ceramic lids, ceramic nozzles and other ceramic internal process chamber components may be heat treated using process 150 to improve yield of manufactured products. Moreover, ceramic articles to which process 150 is applied may have a reduced replacement frequency, and may reduce apparatus down time.


Note that process 150 may be performed as part of a manufacturing process after ceramic articles have been machined. Additionally, process 150 may be periodically performed on used ceramic articles to heal or repair those ceramic articles. For example, a ceramic article may be heat treated using process 150 before use, and may then be heat treated using process 150 every few months, once a year, twice a year, or at some other frequency. The frequency with which to perform process 150 may depend on plasma etch and/or plasma clean recipes that are used with the ceramic article. For example, if the ceramic article is frequently exposed to particularly harsh plasma environments, then the ceramic article may be heat treated at an increased frequency.


Exposure to plasma may cause the ceramic article to erode and/or corrode over time. For example, the plasma may cause broken bonds to occur at the surface of the ceramic article, may generate ceramic particles that can contaminate processed substrates, may cause defects at the surface of the ceramic article, and so on. Accordingly, as a ceramic article ages, the more particle contamination it is likely to cause. The heat treatment process 150 may be performed on such aged ceramic articles to reverse damage caused by the corrosive plasma environment. The heat treatment may heal defects and reduce particles for used ceramic articles in addition to newly manufactured ceramic articles. Accordingly, process 150 may be performed on used ceramic articles to prolong their useful life.


Note that in addition to healing surface defects and minimizing particles, the heat treatment process 150 may also be used to dry clean ceramic articles. Exposure to plasma environments may cause polymers to form on a surface of the ceramic article. These polymers may cause particle contamination on substrates during subsequent processing. Often, a periodic wet clean procedure is performed to remove the polymers from the ceramic article. In one embodiment, heat treatment process 150 is performed instead of or in addition to a wet clean process. The heat treatment process 150 may cause the polymers that coat the ceramic article to react with air or another gas in a high temperature environment. This reaction may cause the polymer to become gaseous, and to leave the surface of the ceramic article. Therefore, the heat treatment process 150 can be used both to clean the ceramic article and to repair a surface of the ceramic article.



FIG. 2A shows micrographs 202-210 of a ceramic article at a 10,000-fold magnification before the ceramic article is processed using a heat treatment, and after the ceramic article has been processed using heat treatments of various temperatures, in accordance with embodiments of the present invention. The ceramic article shown in micrographs 202-210 is a HPM ceramic composite having Y4Al2O9 and Y2-xZrxO3 (a solution of Y2O3—ZrO2). Micrograph 202 shows a sample of the ceramic article prior to heat treatment. Micrograph 204 shows the sample of micrograph 202 after a 1200° C. heat treatment. Micrograph 206 shows the sample of micrograph 202 after a 1500° C. heat treatment. Micrograph 208 shows the sample of micrograph 202 after a 1600° C. heat treatment. Micrograph 210 shows the sample of micrograph 202 after a 1700° C. heat treatment. As shown, the surface morphology of the HPM ceramic composite significantly changed above a 1500° C. heat treatment, causing surface roughness to significantly improve.



FIG. 2B shows micrographs 234-240 of an HPM composite ceramic article at a 4,000-fold magnification before the ceramic article is processed using a heat treatment, and after the ceramic article has been processed using heat treatments of various temperatures, in accordance with embodiments of the present invention. Micrograph 232 shows a sample of the ceramic article prior to heat treatment. Micrograph 234 shows the sample of micrograph 232 after heat treatment at 1200° C. Micrograph 236 shows the sample of micrograph 232 after heat treatment at 1500° C. Micrograph 238 shows the sample of micrograph 232 after heat treatment at 1600° C. Micrograph 240 shows the sample of micrograph 232 after heat treatment at 1700° C. As shown, the heat treatment caused surface roughness to significantly improve and surface morphology to change.



FIG. 3A is a graph showing surface profiles of the ceramic articles before heat treatment 310 and after the heat treatment 320, in accordance with one embodiment of the present invention. The vertical axis represents the surface profile variation from a baseline (represented as 0) in micro-inches, and the horizontal axis represents distance across the surface of the ceramic article in thousandths of an inch. As shown, the number of defects that are deeper than about 70 micro-inches are significantly reduced from about 8 defects deeper than about 70 micro-inches over 160 thousandths micro-inch to about 3 defects deeper than about 70 micro-inches over 160 thousandths micro-inch. Accordingly, the defect density for deep defects (e.g., defects greater than about 70 micro-inches or greater than 1 standard deviation from average) may be reduced by 50% or more. Additionally, the uniformity and surface roughness of the surface is improved in the post-heat treated ceramic article. A surface roughness as low as about 0.1μ-inch may be achieved in some embodiments. Post heat treatment, the ceramic article may have a surface roughness of about 0.1μ-inch to about 150μ-inch, depending on the type of ceramic, pre-heat treatment surface roughness, and so on. In one embodiment, post-heat treatment surface roughness is approximately 20-60μ-inch.



FIG. 3B is a graph 320 showing a phase composition comparison of an HPM ceramic composite before heat treatment 322, after a 1200° C. heat treatment 324 and after a 1680° C. heat treatment 326. As shown, the heat treatment may not change a phase composition of the HPM ceramic composite.



FIG. 4A shows micrographs 402-406 of a solid yttria ceramic article at a 10,000-fold magnification before and after the solid yttria ceramic article is processed using a heat treatment, in accordance with one embodiment of the present invention. Micrograph 402 shows a sample of the ceramic article prior to heat treatment. Micrograph 404 shows the sample of micrograph 402 after heat treatment at 1500° C. Micrograph 406 shows the sample of micrograph 402 after heat treatment at 1700° C. As shown, the heat treatment caused surface morphology to change, significantly improving roughness and removing particles and potential particles.



FIG. 4B shows micrographs 422-426 of a solid yttria ceramic article at a 4,000-fold magnification before and after the solid yttria ceramic article is processed using the heat treatment, in accordance with one embodiment of the present invention. Micrograph 422 shows a sample of the ceramic article prior to heat treatment. Micrograph 424 shows the sample of micrograph 422 after heat treatment at 1500° C. Micrograph 426 shows the sample of micrograph 422 after heat treatment at 1700° C. As shown, the heat treatment caused surface roughness to significantly improve.



FIG. 5 is a graph showing surface profiles of the solid yttria ceramic article of FIGS. 4A-4B before the heat treatment 510 and after the heat treatment 520, in accordance with one embodiment of the present invention. The vertical axis represents the profile variation in micro-inches, and the horizontal axis represents distance across the surface in thousandths of an inch. As shown, the number of defects that are deeper than about 100 micro-inches are significantly reduced, as is the depth of these defects. For example, prior to the heat treatment, there were at least two defects over 160 thousandths of an inch that were nearly 200 micro-inches deep. In contrast, there were no surface defects with those depths after the heat treatment. Additionally, the uniformity of the surface is improved in the post-heat treated ceramic article.









TABLE 1







Surface Morphology Pre-Heat Treatment and Post-Heat Treatment













Rz
RHSC
Pmr



Ra (μ-inch)
(μ-inch)
(unitless)
(%)
















HPM
Pre-Heat Treatment
23.86
176.29
19
1.94



Post-Heat Treatment
20.46
156.83
29
2.16


Y2O3
Pre-Heat Treatment
32.21
222.26
18
0.95



Post-Heat Treatment
26.26
198.65
29
1.88









Table 1 shows a surface morphology of HPM and yttria ceramic articles before and after performing a heat treatment on the ceramic articles, in accordance with embodiments of the present invention. The surface morphology shown in Table 1 is based on measurements of the HPM and yttria ceramic articles illustrated in FIGS. 2A-5.


The surface morphology may be represented using surface roughness parameters and/or surface uniformity parameters. Measured parameters that represent surface roughness are average roughness (Ra) and maximum peak to valley height (Rz). Ra may be determined by computing an arithmetic average of the absolute values of roughness profile ordinates within a specified window. Ra may be computed by finding and measuring the greatest peak to valley distance within the window. Ra and rz have units of measurement in micro-inches (μ-inches) in Table 1. Lower values of Ra and Rz represent a smoother surface, and may be indicators of improved performance with regards to particle contamination.


Measured parameters that represent surface uniformity are high spot count (RHSC) and bearing length ratio (Pmr). RHSC is computed by determining a cut height based on subtracting a depth value from a highest peak within the window, and then counting a number of peaks that exceed the cut height. Pmr is computed by adding up peak widths of the peaks at the cut height, and computing a percentage of the window that is filled by the sum of the peak widths. The depth value used to determine the cut height for RHSC and Pmr in Table 1 is 20μ-inches. Higher values of RHSC and Pmr represent greater uniformity, and may be indicators of improved performance with regards to particle contamination.


As shown, the Ra, Rz, RHSC and Pmr values for both the HPM and yttria ceramic articles improved as a result of the heat treatment. In one embodiment, centerline average surface roughness (Ra) is improved by about 3-5μ-inches or about 10-20% for HPM ceramic articles and by about 5-10 μ-inches or about 15-30% for yttria ceramic articles. As shown, post treatment surface roughness for HPM ceramic articles may be around 20μ-inches and post heat treatment surface roughness for yttria ceramic articles may be around 26μ-inches in one embodiment. Empirical evidence also shows that the amount of particle contamination caused during plasma etch processes by ceramic lids and ceramic nozzles is decreased as a result of the heat treatment.



FIG. 6 is a chart 600 showing surface particle count of an HPM composite ceramic before and after heat treatment, in accordance with one embodiment of the present invention. In chart 600, measured particles have a size greater than or equal to 0.2 microns. As shown, the particle count prior to heat treatment is in excess of 200,000 particles per square centimeter, with a range of about 210,000 particles to about 250,000 across samples (e.g., 230,000±20,000 particles per square centimeter). However, the particle count after a heat treatment at 1600° C. is about 15,000±1,000 particles per square centimeter. Accordingly, the surface particle count may be significantly improved by performing heat treatments described herein. In one embodiment, the surface particle count may improve by over 200,000 particles per square centimeter, which is in improvement of as much as about 93%.



FIG. 7 is another chart 700 showing surface particle count (in thousands of particles) of an HPM composite ceramic before heat treatment and during heat treatment at various temperatures, in accordance with embodiments of the present invention. In chart 700, measured particles may have a size greater than or equal to 0.2 microns. As shown, the particle count prior to heat treatment is about 180,000 particles per square centimeter. The particle count increases in relation to temperature increases for heat treatments up to around 500° C. The particle count then decreases in relation to temperature increases for heat treatments of about 500° C. to about 1200° C.


Note that for heat treatments of up to about 1200° C., the interaction between particles and a surface of the ceramic article may be dominated by a van der Waals force, according to the following equation:









F
=

A

12





π






H
2







(

equation





1

)








where F is force, A is area and H is distance. As the heat treatment temperature increases from room temperature to about 500° C., the van der Wall force may weaken, and thermal expansion may induce an increase in the distance H. As the heat treatment temperature increases from 500° C. to about 1200° C., the van der Waal force may strengthen due at least in part to decreases in the distance H. Such reductions in distance may be due to the substrate surface absorbing particles and/or deformations.


At temperatures between about 1200° C. and 1800° C., a liquid film may be formed between particles and the substrate surface. Between about 1200° C. and 1500° C., the liquid film may be a thin liquid film, and between about 1500° C. and 1800° C., the liquid film may be a thick liquid film. At temperatures up to about 1800° C., the interaction between the particles and the substrate surface may be dominated by interaction through the liquid by a capillary force, according to the following equation:

F=4πγR cos θ  (equation 2)

where F is force, γ is liquid-air surface tension, R is effective radius of the interface between the particles and substrate surface, and 0 is contact angle. At these temperatures, particles may be diffused into the liquid, and may be re-grown on a corresponding grain. This may cause particles to be removed from the substrate surface, even after the ceramic article has cooled.


For the HPM ceramic composite and yttria, 1800° C. is the sintering temperature. Accordingly, at temperatures at or above around 1800° C., a liquid phase is formed in the bulk of the substrate between powders. These powders may melt into liquid and grow into grains of increasing size. Atoms may be diffused from high energy grains to low energy grains until an equilibrium is reached. Accordingly, in one embodiment, the heat treatment is performed at temperatures below about 1800° C.


The preceding description sets forth numerous specific details such as examples of specific systems, components, methods, and so forth, in order to provide a good understanding of several embodiments of the present invention. It will be apparent to one skilled in the art, however, that at least some embodiments of the present invention may be practiced without these specific details. In other instances, well-known components or methods are not described in detail or are presented in simple block diagram format in order to avoid unnecessarily obscuring the present invention. Thus, the specific details set forth are merely exemplary. Particular implementations may vary from these exemplary details and still be contemplated to be within the scope of the present invention.


Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. In addition, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.”


Although the operations of the methods herein are shown and described in a particular order, the order of the operations of each method may be altered so that certain operations may be performed in an inverse order or so that certain operation may be performed, at least in part, concurrently with other operations. In another embodiment, instructions or sub-operations of distinct operations may be in an intermittent and/or alternating manner.


It is to be understood that the above description is intended to be illustrative, and not restrictive. Many other embodiments will be apparent to those of skill in the art upon reading and understanding the above description. The scope of the invention should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims
  • 1. A heat-treated ceramic article prepared by a process comprising: heating a machined ceramic article to a temperature range between about 1000° C. and about 1800° C., wherein the machined ceramic article comprises an uncoated bulk sintered ceramic comprising a rare earth oxide, the machined ceramic article has a surface with an initial surface defect density and an initial surface roughness, the initial surface defect density is based on a plurality of surface defects, the plurality of surface defects comprises a plurality of broken bonds having surface particles bound thereto, and the surface particles comprise the rare earth oxide and are formed by breaking of bonds of the machined ceramic article to form the plurality of broken bonds;heat treating the machined ceramic article at one or more temperatures within the temperature range for a duration of up to about 24 hours, the heat treating comprising: melting a layer of the machined ceramic article at the surface, wherein at least a fraction of the surface particles are melted to produce melted surface particles;diffusing the melted surface particles comprising the rare earth oxide into the plurality of surface defects at the melted layer to form unbroken bonds with the layer at the plurality of surface defects; andre-growing the melted surface particles comprising the rare earth oxide on grains of the machined ceramic article; andcooling the machined ceramic article, wherein the heating and cooling are each performed at a ramping rate of less than about 5° C. per minute to avoid cracking of the machined ceramic article, and wherein the heat-treated ceramic article has a reduced surface defect density that is lower than the initial surface defect density, a reduced amount of surface particles comprising the rare earth oxide that are trapped by broken bonds, and a reduced surface roughness, caused by the heat treating that comprises an average roughness of about 26.26 μ-inch or less and a maximum peak to valley height of about 198.65 μ-inch or less, wherein the reduced surface roughness is lower than the initial surface roughness.
  • 2. The heat-treated ceramic article of claim 1, wherein the machined ceramic article is a bulk ceramic article consisting essentially of at least one of Al2O3, AlON, Y4Al2O9 (YAM), YAlO3, Al2O3-YAG, Quartz, SiC, Sialon, Si3N4, AN, TiO2, ZrO2, TiC, TiCN, ZrC, SiC, TiN, SiC—Si3N4, or Y2O3 stabilized ZrO2.
  • 3. The heat-treated ceramic article of claim 1, wherein the machined ceramic article comprises a compound of Y4Al2O9 and a solid-solution of Y2O3—ZrO2, wherein the compound is formed from about 55-77 mol % Y2O3, about 15-23 mol % ZrO2, and about 8-25 mol % Al2O3.
  • 4. The heat-treated ceramic article of claim 1, wherein the heat treating is performed in at least one of a vacuum or presence of N2.
  • 5. The heat-treated ceramic article of claim 1, wherein the heat-treated heat treated ceramic article is one of a lid for a plasma etcher or a nozzle for the plasma etcher.
  • 6. The heat-treated ceramic article of claim 1, wherein the reduced surface roughness of the heat-treated ceramic article is approximately 10-30% less than the initial surface roughness, and wherein the reduced amount of surface particles is about 50-90% less than an initial surface particle count of the machined ceramic article.
  • 7. The heat-treated ceramic article of claim 1, wherein the machined ceramic article comprises Y2O3.
  • 8. The heat-treated ceramic article of claim 1, wherein the machined ceramic article comprises Y3Al5O12 (YAG).
  • 9. The heat-treated ceramic article of claim 1, the process further comprising: after the heat-treated ceramic article has been used in a plasma etch process, repeating the heating, the heat treating and the cooling to reduce an increased surface defect density caused by the plasma etch process.
  • 10. The heat-treated ceramic article of claim 9, wherein the plasma etch process causes polymers to form on the heat-treated ceramic article, and wherein repeating the heat treating in presence of oxygen dry cleans the heat-treated ceramic article by causing the polymers to react with the oxygen to become gases.
  • 11. The heat-treated ceramic article of claim 1, wherein the heat-treated ceramic article has a defect density of surface defects having a depth of deeper than about 70 μ-inch that is at least 50% less than an initial defect density of surface defects having the depth of deeper than about 70 μ-inch of the machined ceramic article.
  • 12. The heat-treated ceramic article of claim 1, wherein the reduced amount of surface particles is about 90% less than an initial amount of surface particles of the machined ceramic article, wherein each particle of the reduced amount of surface particles and the initial amount of surface particles has a size that is equal to or greater than 0.2 microns.
  • 13. The heat-treated ceramic article of claim 1, wherein the temperature range is over 1600° C. to under 1800° C.
  • 14. The heat treated ceramic article of claim 13, wherein the temperature range is from about 1700° C. to under 1800° C.
  • 15. The heat-treated ceramic article of claim 1, wherein the heat treating further comprises: melting the surface particles trapped by the plurality of surface defects;flowing together the melted surface particles with the melted layer of the ceramic article at regions of the plurality of surface defects; andredepositing the melted surface particles onto the machined ceramic article at the regions of the plurality of surface defects to form a plurality of unbroken bonds.
  • 16. The heat-treated ceramic article of claim 1, wherein: the reduced amount of surface particles is, caused by the heat treating, lower than an initial amount of surface particles of the machined ceramic article;the reduced amount of surface particles is about 14,000 to 16,000 particles per square centimeter;the heat-treated ceramic article has, caused by the heat treating, an increased surface uniformity that is greater than an initial surface uniformity of the machined ceramic article; andthe increased surface uniformity comprises about 29 high spot count (HSC) or greater and about 1.88% bearing rate ratio (Pmr) or greater.
  • 17. A heat-treated ceramic article prepared by a process comprising: heating a machined ceramic article to a temperature range between about 1000° C. and about 1800° C.;heat treating the machined ceramic article at one or more temperatures within the temperature range for a duration of up to about 24 hours; andcooling the machined ceramic article, wherein the heat-treated ceramic article has a reduced amount of surface particles that is about 14,000 to 16,000 particles per square centimeter, wherein the reduced amount of surface particles is lower than an initial amount of surface particles of the machined ceramic article.
  • 18. The heat-treated ceramic article of claim 17, wherein the heating and the cooling are each performed at a ramping rate of less than about 5° C. per minute to avoid cracking of the machined ceramic article.
  • 19. A heat-treated ceramic article prepared by a process comprising: heating a machined ceramic article to a temperature range between about 1000° C. and about 1800° C.;heat treating the machined ceramic article at one or more temperatures within the temperature range for a duration of up to about 24 hours; andcooling the machined ceramic article, wherein the heat-treated ceramic article has an increased surface uniformity that comprises about 29 high spot count (HSC) or greater, wherein the increased surface uniformity is greater than an initial surface uniformity of the machined ceramic article.
  • 20. The heat-treated ceramic article of claim 19, wherein: the heating and the cooling are each performed at a ramping rate of less than about 5° C. per minute to avoid cracking of the machined ceramic article; andthe increased surface uniformity further comprises about 1.88% bearing rate ratio (Pmr) or greater.
RELATED APPLICATIONS

This present application is a continuation of U.S. patent application Ser. No. 13/659,813, filed Oct. 24, 2012, which claims the benefit under 35 U.S.C. § 119(e) of U.S. Provisional Application No. 61/601,458, filed Feb. 21, 2012, the entire contents of which are hereby incorporated by reference herein.

US Referenced Citations (244)
Number Name Date Kind
3796182 Rosier Mar 1974 A
4399199 McGill et al. Aug 1983 A
4439248 Herchenroeder et al. Mar 1984 A
4642440 Schnackel et al. Feb 1987 A
4695439 Ritsko et al. Sep 1987 A
4704299 Wielonski et al. Nov 1987 A
4773928 Houck et al. Sep 1988 A
4880614 Strangman et al. Nov 1989 A
5381944 Makowiecki et al. Jan 1995 A
5415756 Wolfe et al. May 1995 A
5626923 Fitzgibbons et al. May 1997 A
5631803 Cameron et al. May 1997 A
5687679 Mullin et al. Nov 1997 A
5766693 Rao Jun 1998 A
5800871 Collins et al. Sep 1998 A
5837058 Chen et al. Nov 1998 A
5853815 Muehlberger Dec 1998 A
5916689 Collins et al. Jun 1999 A
6106959 Vance et al. Aug 2000 A
6194083 Yasuda et al. Feb 2001 B1
6245202 Edamura et al. Jun 2001 B1
6326076 Takai Dec 2001 B1
6361645 Schoepp et al. Mar 2002 B1
6506254 Bosch et al. Jan 2003 B1
6530990 Kong et al. Mar 2003 B2
6534194 Weihs et al. Mar 2003 B2
6548424 Putkonen Apr 2003 B2
6576354 Tsukatani et al. Jun 2003 B2
6581275 Narendrnath et al. Jun 2003 B2
6616031 Wong et al. Sep 2003 B2
6620520 O'Donnell Sep 2003 B2
6733843 Tsukatani et al. May 2004 B2
6777353 Putkonen Aug 2004 B2
6783875 Yamada et al. Aug 2004 B2
6794047 Takai et al. Sep 2004 B2
6794059 Shanker Sep 2004 B2
6798519 Nishimoto et al. Sep 2004 B2
6805952 Chang et al. Oct 2004 B2
6858332 Yamada Feb 2005 B2
6858546 Niinisto et al. Feb 2005 B2
6884514 Simpson et al. Apr 2005 B2
6916534 Wataya et al. Jul 2005 B2
6933254 Morita et al. Aug 2005 B2
6942929 Han et al. Sep 2005 B2
6949203 Hsieh et al. Sep 2005 B2
6962524 Butterfield et al. Nov 2005 B2
7278911 Butterfield et al. Oct 2007 B2
7300537 O'Donnell et al. Nov 2007 B2
7351482 Boutwell et al. Apr 2008 B2
7351658 Putkonen Apr 2008 B2
7384696 Hayasaki et al. Jun 2008 B2
7422516 Butterfield et al. Sep 2008 B2
7441688 Van Heerden et al. Oct 2008 B2
7479464 Sun et al. Jan 2009 B2
7498272 Niinisto et al. Mar 2009 B2
7507268 Rosenflanz Mar 2009 B2
7510641 Kreiskott et al. Mar 2009 B2
7615133 Tateno et al. Nov 2009 B2
7648782 Kobayashi et al. Jan 2010 B2
7649729 Buchberger, Jr. et al. Jan 2010 B2
7655328 Maeda et al. Feb 2010 B2
7672110 Sun et al. Mar 2010 B2
7690308 Nielson et al. Apr 2010 B2
7696117 Sun et al. Apr 2010 B2
7810704 Duckham et al. Oct 2010 B2
7838083 Youchison et al. Nov 2010 B1
7846291 Otsuki Dec 2010 B2
7964517 Jaiswal Jun 2011 B2
7968205 Nakano et al. Jun 2011 B2
8034734 Sun et al. Oct 2011 B2
8129029 Sun et al. Mar 2012 B2
8206829 Sun et al. Jun 2012 B2
8367227 Sun et al. Feb 2013 B2
8404572 Chang et al. Mar 2013 B2
8619406 Cho et al. Dec 2013 B2
8758858 Sun et al. Jun 2014 B2
8858745 Sun et al. Oct 2014 B2
8941969 Thach et al. Jan 2015 B2
9017765 Sun et al. Apr 2015 B2
9034199 Duan et al. Apr 2015 B2
9142439 Jindo et al. Sep 2015 B2
9394615 Sun et al. Jul 2016 B2
9440886 Sun et al. Sep 2016 B2
9583369 Sun et al. Feb 2017 B2
9617188 Sun et al. Apr 2017 B2
9850568 Sun et al. Dec 2017 B2
20010003271 Otsuki Jun 2001 A1
20020018921 Yamada et al. Feb 2002 A1
20020043666 Parsons et al. Apr 2002 A1
20020086119 Hariharan et al. Jul 2002 A1
20020100424 Sun et al. Aug 2002 A1
20030007308 Harada et al. Jan 2003 A1
20030024807 Baldwin et al. Feb 2003 A1
20030029563 Kaushal et al. Feb 2003 A1
20030047464 Sun et al. Mar 2003 A1
20030047802 Hiramatsu et al. Mar 2003 A1
20030051811 Uchimaru et al. Mar 2003 A1
20030134134 Simpson et al. Jul 2003 A1
20030159657 Kaushal et al. Aug 2003 A1
20030164354 Hsieh et al. Sep 2003 A1
20030175142 Milonopoulou et al. Sep 2003 A1
20030185965 Lin et al. Oct 2003 A1
20030186034 Yamada Oct 2003 A1
20030232139 DeTura Dec 2003 A1
20030232221 Yamada et al. Dec 2003 A1
20040009297 Fusaro, Jr. et al. Jan 2004 A1
20040033385 Kaushal et al. Feb 2004 A1
20040110016 Hamaya et al. Jun 2004 A1
20040157473 Hayashi et al. Aug 2004 A1
20040191545 Han et al. Sep 2004 A1
20040229078 Maeda Nov 2004 A1
20040266216 Li et al. Dec 2004 A1
20050037193 Sun et al. Feb 2005 A1
20050042876 Kobayashi et al. Feb 2005 A1
20050056056 Wong Mar 2005 A1
20050084654 Takahashi et al. Apr 2005 A1
20050136188 Chang Jun 2005 A1
20050153069 Tapphorn et al. Jul 2005 A1
20050164513 DeOrnellas et al. Jul 2005 A1
20050181566 Machida et al. Aug 2005 A1
20050227118 Uchimaru et al. Oct 2005 A1
20050266682 Chen et al. Dec 2005 A1
20050284770 Butterfield et al. Dec 2005 A1
20060051602 Iacovangelo et al. Mar 2006 A1
20060068189 Raybould et al. Mar 2006 A1
20060081939 Akasaka et al. Apr 2006 A1
20060090704 Ide et al. May 2006 A1
20060096703 Moriya et al. May 2006 A1
20060096704 Kim May 2006 A1
20060164785 Pellegrin Jul 2006 A1
20060222777 Skoog et al. Oct 2006 A1
20070006561 Brady et al. Jan 2007 A1
20070047170 Sun et al. Mar 2007 A1
20070110915 Kitamura et al. May 2007 A1
20070111030 Nakano et al. May 2007 A1
20070113783 Lee May 2007 A1
20070169891 Koshiishi et al. Jul 2007 A1
20070212567 Esaki et al. Sep 2007 A1
20070218302 Kobayashi et al. Sep 2007 A1
20070274837 Taylor et al. Nov 2007 A1
20080009417 Lou et al. Jan 2008 A1
20080016684 Olechnowicz et al. Jan 2008 A1
20080029032 Sun et al. Feb 2008 A1
20080057326 Schlichting et al. Mar 2008 A1
20080090034 Harrison et al. Apr 2008 A1
20080099148 Ryabova et al. May 2008 A1
20080108225 Sun et al. May 2008 A1
20080113218 Schlichting et al. May 2008 A1
20080142755 Vaidhyanathan et al. Jun 2008 A1
20080169588 Shih et al. Jul 2008 A1
20080174930 Hattori et al. Jul 2008 A1
20080176149 Grimbergen Jul 2008 A1
20080213496 Sun et al. Sep 2008 A1
20080223574 Dickson et al. Sep 2008 A1
20080223725 Han et al. Sep 2008 A1
20080237029 Tang et al. Oct 2008 A1
20080241412 Inaki et al. Oct 2008 A1
20080261800 Yuan et al. Oct 2008 A1
20080264564 Sun et al. Oct 2008 A1
20080264565 Sun et al. Oct 2008 A1
20080268171 Ma et al. Oct 2008 A1
20080268645 Kao et al. Oct 2008 A1
20090034147 Narendrnath et al. Feb 2009 A1
20090034148 Lubomirsky et al. Feb 2009 A1
20090034149 Lubomirsky et al. Feb 2009 A1
20090036292 Sun et al. Feb 2009 A1
20090075486 Kikuyama et al. Mar 2009 A1
20090133713 Ohmi et al. May 2009 A1
20090142588 Ohmi et al. Jun 2009 A1
20090162647 Sun et al. Jun 2009 A1
20090214825 Sun et al. Aug 2009 A1
20090252945 Refke et al. Oct 2009 A1
20090284894 Cooke Nov 2009 A1
20090297718 Sarrafi-Nour et al. Dec 2009 A1
20100028572 Kobayashi et al. Feb 2010 A1
20100039747 Sansoni et al. Feb 2010 A1
20100048379 Thippareddy et al. Feb 2010 A1
20100053841 Rusinko, Jr. et al. Mar 2010 A1
20100112192 Li et al. May 2010 A1
20100119843 Sun et al. May 2010 A1
20100119844 Sun et al. May 2010 A1
20100129670 Sun et al. May 2010 A1
20100160143 Sun et al. Jun 2010 A1
20100177454 Elliot et al. Jul 2010 A1
20100218472 Iyer Sep 2010 A1
20100272982 Dickinson et al. Oct 2010 A1
20100314356 Nagayama et al. Dec 2010 A1
20110049729 Naundorf et al. Mar 2011 A1
20110086178 Ruud et al. Apr 2011 A1
20110135915 Lee et al. Jun 2011 A1
20110149462 Kugimoto et al. Jun 2011 A1
20110151237 Nakano et al. Jun 2011 A1
20110174441 Yamashita et al. Jul 2011 A1
20110198034 Sun et al. Aug 2011 A1
20110256411 Courcot et al. Oct 2011 A1
20110268877 Dickson et al. Nov 2011 A1
20110268956 Fagoaga Altuna et al. Nov 2011 A1
20110315081 Law et al. Dec 2011 A1
20120034469 Sun et al. Feb 2012 A1
20120040100 Matias et al. Feb 2012 A1
20120074514 Nguyen et al. Mar 2012 A1
20120076574 Parkhe Mar 2012 A1
20120100299 Zajchowski et al. Apr 2012 A1
20120100300 Gindrat et al. Apr 2012 A1
20120104703 Sun et al. May 2012 A1
20120125488 Sun et al. May 2012 A1
20120144640 Shih et al. Jun 2012 A1
20120196139 Petorak et al. Aug 2012 A1
20120299253 Kosakai et al. Nov 2012 A1
20120307412 Boyd, Jr. et al. Dec 2012 A1
20130019797 Tanaka et al. Jan 2013 A1
20130023401 Watanabe et al. Jan 2013 A1
20130026720 Hori et al. Jan 2013 A1
20130048606 Mao et al. Feb 2013 A1
20130115418 Young-Dohe et al. May 2013 A1
20130130052 Menuey et al. May 2013 A1
20130156958 Belov et al. Jun 2013 A1
20130174983 Kikuchi et al. Jul 2013 A1
20130216783 Duan et al. Aug 2013 A1
20130216821 Sun et al. Aug 2013 A1
20130224498 Sun et al. Aug 2013 A1
20130224675 Park Aug 2013 A1
20130273313 Sun et al. Oct 2013 A1
20130273327 Sun et al. Oct 2013 A1
20130284373 Sun et al. Oct 2013 A1
20130288037 Sun et al. Oct 2013 A1
20130333592 Nakagawa et al. Dec 2013 A1
20140030486 Sun et al. Jan 2014 A1
20140030533 Sun et al. Jan 2014 A1
20140031533 Liu et al. Jan 2014 A1
20140037969 Margolies Joshua Lee et al. Feb 2014 A1
20140159325 Parkhe et al. Jun 2014 A1
20140177123 Thach et al. Jun 2014 A1
20150004418 Sun et al. Jan 2015 A1
20150064406 Harada et al. Mar 2015 A1
20150218057 Sun et al. Aug 2015 A1
20150275361 Lubomirsky et al. Oct 2015 A1
20150275375 Kim et al. Oct 2015 A1
20160042924 Kim et al. Feb 2016 A1
20160079040 Park et al. Mar 2016 A1
20160211121 Sun et al. Jul 2016 A1
20160326626 Sun et al. Nov 2016 A1
20170130319 Sun et al. May 2017 A1
20170133207 Sun et al. May 2017 A1
Foreign Referenced Citations (45)
Number Date Country
101657516 Feb 2010 CN
200301654 Jun 2003 DE
0330196 Aug 1989 EP
H07-075893 Mar 1995 JP
H10-45461 Feb 1998 JP
2002087878 Mar 2002 JP
2004-107718 Apr 2004 JP
2005-240171 Sep 2005 JP
2005-279481 Oct 2005 JP
2005279481 Oct 2005 JP
2006027012 Feb 2006 JP
2006-207012 Aug 2006 JP
2006027012 Aug 2006 JP
2007-070175 Mar 2007 JP
2007-138288 Jun 2007 JP
2007191794 Aug 2007 JP
2007-530792 Nov 2007 JP
2009536732 Oct 2009 JP
2010-006641 Jan 2010 JP
2010106327 May 2010 JP
2010-229492 Oct 2010 JP
2010229492 Oct 2010 JP
2013124378 Jun 2013 JP
1020030025007 Mar 2003 KR
1020070013118 Jan 2007 KR
1020110028378 Mar 2011 KR
1020110117845 Oct 2011 KR
10-1108692 Jan 2012 KR
2004-04754 Apr 2004 TW
200846496 Dec 2008 TW
201026632 Jul 2010 TW
WO2001024581 Apr 2001 WO
WO2002000968 Jan 2002 WO
WO2003100843 Dec 2003 WO
WO2012033326 Mar 2012 WO
WO 2013126466 Aug 2013 WO
WO2013126466 Aug 2013 WO
WO 2013155220 Oct 2013 WO
WO 2013162909 Oct 2013 WO
WO2013155220 Oct 2013 WO
WO2013162909 Oct 2013 WO
WO 2014018830 Jan 2014 WO
WO 2014018835 Jan 2014 WO
WO2014018830 Jan 2014 WO
WO2014018835 Jan 2014 WO
Non-Patent Literature Citations (26)
Entry
Glushkova, V. B., Krzhizhanovskaya, V. A., Strakhov, V. I., Sovestnova, O. A., and Novikov, V. K., Phase Formation in the ZrO2—Nd2O3(Y2O3)—Al2O3(Cr2O3) Systems and Properties of Materials Based on Them, 2001, Plenum Publishing Corporation, Refractories and Industrial Ceramics, vol. 42, Nos. 1-2, pp. 71-75.
Gorse, Christopher; Johnston, David; and Pritchard, Martin. Dictionary of Construction, Surveying and Civil Engineering. 2012. Oxford University Press. p. 442. Online version available at: http://app.knovel.com/hotlink/toc/id:kpDCSCE002/dictionary-construction/dictionary-construction (Year: 2012).
Taffner et al., “Preparation and Microstructural Analysis of High-Performance Ceramics,” ASM Handbook vol. 9: Metallography and Microstructures, 2004, 11 pages, ASM International, Materials Park, Ohio, USA.
Bhatia et al., “Mechanisms of ceramic coating deposition in solution-precurosr plasma spray,” J.Mater. Res., vol. 17, No. 9, Sep. 2002, 10 pages, Materials Research Society, Warrendale, PA, USA.
Hass et al., “Gas jet assisted vapor deposition of yttria stabilized zirconia,” Department of Materials Science and Engineering, School of Engineering and Applied Science, published Feb. 27, 2009 University of Virginia, Charlottesville, Virginia.
Di Girolamo et al., “Microstructure and thermal properties of plasma-sprayed ceramic thermal barrier coatings,” Energia, Ambiente e Innovazione, Published Jan. 2, 2013.
Bergant et al., “Porosity evaluation of flame-sprayed and heat-treated coatings using image analysis,” Image Anal Stereol 2011;30:53-62, Published Jan. 27, 2011.
Smith et al., “Very Low Pressure Plasma Spray—A Review of an Emerging Technology in the Thermal Spray Community,” Coatings 2011, 1, 117-132, doi: 10.3390/coatings1020117, Published Dec. 20, 2011.
Govindarajan et al., “In situ Particle Generation and Splat Formation During Solution Precursor Plasma Spraying of Yttria-Stabilized Zirconia Coatings,” J Am. Ceram. Soc., 1-9 (2011).
Kitamura et al., “Structural, Mechanical and Erosion Properties of Yttrium Oxide Coatings by Axial Suspension Plasma Spraying for Electronics Applications,” Journal of Thermal Spray Technology, 20:170-185, Jan. 2011.
Nakamura et al., “Effects of Pores on Mechanical Properties of Plasma-Sprayed Ceramic Coatings,” J. Am. Ceram. Soc., 83 [3] 578-84, Mar. 2000.
Zircotec—Plasma sprayed ceramic thermal coatings, http://www.zircotec.com/page/plasma-spray-processing/39, downloaded Apr. 4, 2014.
Ulrike Taffner et al., “Preparation and Microstructural Analysis of High-Performance Ceramics,” ASM Handbook vol. 9: Metallography and Microstructures, 2004, 11 pages, ASM International, Materials Park, Ohio, USA.
Tania Bhatia et al., “Mechanisms of ceramic coating deposition in solution-precursor plasma spray,” J. Mater. Res., vol. 17, No. 9, Sep. 2002, 10 pages, Materials Research Society, Warrendale, PA, USA.
Hass et al., “Gas jet assisted vapor deposition of yttria stabilized zircona,” Department of Materials Science and Engineering, School of Engineering and Applied Science, University of Virginia, Charlottesville, Virginia, 22903, published Feb. 27, 2009.
Bergant et al., “Porosity evaluation of flame-sprayed and heat-treated coatings using image analysis,” Image Anal Stereo 2011; 30:53-62, Published Jan. 27, 2011.
International Search Report & Written Opinion of the International Searching Authority dated Apr. 25, 2013, in International Application No. PCT/US2013/026963.
Govidarajan et al., “In situ Particle Generation and Splat Formation During Solution Precursor Plasma Spraying of Yttria-Stabilized Zirconia Coatings,” J Am. Ceram. Soc., 1-9 (2011).
“Thermal Spraying,” definition, Wikipedia, http://en.wikipedia.org/wiki/Thermal_spraying, downloaded Apr. 14, 2014.
Refke, et al “LPPS thin film technology for the application of TBC systems”, International Thermal Spray Conference, Basel Switzerland, May 2-4, 2005, 6 pages.
Lewis, Richard J.Sr., editor; Hawley's Condensed Chemical Dictionary, 12th edition, 1993, pp. 540 & 990, Van Nostrand Reinhold company, New York.
Machine translation of KR10-1108692 B1 by Park et al., issued Jan. 25, 2012. (We also cite the actual publication w/ English abstract.).
Greenwood, N.N. et al., “Chemistry of the Elements” (2nd Edition), 1998, p. 1295: Appendix 5: Effective Ionic Radii in pm for Various Oxidation States; School of Chemistry, University of Leeds, U.K.; online version available at app.knovel.com/hotlink/pdf/id:kt003BKDL1/chemistry-elements-2nd/effective-ionic-radii.
Wachtman, J.B. et al., ed. “Ceramic Films and Coatings”, Ch. 6, “Optical Thin Films”, copyright 1993, Noyes Publications, pp. 189-223. Online version available at: app.knovel.com/hotlink/pdf/ld:kt00194M71/ceramic-films-coatings/optical-thin-films.
Smallman, R. E. Ngan, A. H. W.. (2007). Physical Metallurgy and Advanced Materials (7th Edition)—10. Non-Metallics I—Ceramics, Glass, Glass-Ceramics. Elsevier. Online version available at: app.knovel.com/hotlink/pdf/id:kt0083F3A1/.
Koleske, Joseph V., (1995). Paint and Coating Testing Manual (14th Edition); (MNL 17)—48, Hardnes. ADSTM International. Retrieved from app.knovel.com/hotlink/pdf/id:kt004FRQ01/paint-coating-testing/hardness (Year: 1995).
Related Publications (1)
Number Date Country
20150218057 A1 Aug 2015 US
Provisional Applications (1)
Number Date Country
61601458 Feb 2012 US
Continuations (1)
Number Date Country
Parent 13659813 Oct 2012 US
Child 14687615 US