Claims
- 1. An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) comprising:
- material containing means for containing a liquid CVD source material;
- material feeding means for feeding the liquid CVD source material from said material containing means to a vaporizer while keeping the CVD source material liquid;
- a vaporizer for vaporizing the liquid CVD source material fed from said material feeding means by heating the liquid CVD source material to a high temperature to form a CVD source material gas;
- a reaction chamber connected to said vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas; and
- a thermostatic box surrounding said reaction chamber, wherein both of said vaporizer and piping connecting said vaporizer to said reaction chamber are located within said thermostatic box.
- 2. The apparatus recited in claim 1, further comprising:
- a window of KBr in said reaction chamber, and means for blowing a high temperature gas against said window inside said reaction chamber; and
- film quality analyzing means for analyzing quality of a thin film growing in said reaction chamber using infrared absorption spectroscopy (FT-IR) by applying infrared light from outside of said reaction chamber to the thin film in said reaction chamber through said window of KBr.
- 3. The apparatus recited in claim 1, further comprising:
- a window of Be in said reaction chamber, and means for blowing a high temperature gas against said window inside said reaction chamber; and
- film quality analyzing means for analyzing quality of a thin film growing in said reaction chamber using X-ray fluorescence analysis (XRF) by applying X-ray radiation from outside of said reaction chamber to the thin film in said reaction chamber through said window of Be.
Priority Claims (2)
Number |
Date |
Country |
Kind |
P06-326971 |
Dec 1994 |
JPX |
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P06-326972 |
Dec 1994 |
JPX |
|
Parent Case Info
This disclosure is a divisional of patent application Ser. No. 09/070,009, filed on Apr. 30, 1998, now U.S. Pat. No. 6,033,732 which is a division of prior patent application Ser. No. 08/579,495, filed on Dec. 27, 1995, now U.S. Pat. No. 5,776,254.
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5204314 |
Kirlin et al. |
Apr 1993 |
|
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Uchikawa et al. |
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|
5555154 |
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|
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Non-Patent Literature Citations (2)
Entry |
Kawahara et al., "Step Coverage and Electrical Properties Of (Ba, Sr) TiO.sub.3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM).sub.2 ", Japanese Journal of Applied Physics, vol. 33, Part 1, No. 9B, 1994, pp. 5129-5134. |
Kawahara et al., "Influence Of Ti Sources On Properties Of *Ba, Sr)TiO.sub.3 Films Prepared by Liquid Source CVD", Materials Research Society Symposium, vol. 361, 1995, pp. 361-368. |
Divisions (2)
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Number |
Date |
Country |
Parent |
070009 |
Apr 1998 |
|
Parent |
579495 |
Dec 1995 |
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