Claims
- 1. A CVD method for forming a deposited film on a substrate using a CVD apparatus comprising:
- evacuating the inside of a reaction chamber of the CVD apparatus using exhaust means;
- supporting a substrate in the reaction chamber using substrate supporting means; and
- feeding a gaseous starting material into the reaction chamber using a gas feeding means wherein,
- said gas feeding means comprises a container that holds a liquid starting material, pressure reducing means that reduces the pressure inside said container, and heating means that heats said starting material to boiling to form said gaseous starting material.
- 2. A CVD method for forming a deposited film on a substrate using a CVD apparatus for feeding a starting gas into a reaction chamber with starting gas feeding means and depositing a thin film on a substrate placed in said reaction chamber, wherein
- the starting gas is heated using a heating apparatus comprising a heating member having a plurality of through-holes through which a starting gas is passed;
- controlling the temperature of the heating member having a heater provided in the vicinity of said plurality of through-holes using a temperature control means; and
- feeding said starting gas into said reaction chamber through said through-holes.
- 3. CVD method according to claim 1, wherein an alkylaluminum hydride is used as the starting material, which is reacted with hydrogen to form a metal film mainly composed of aluminum, on the surface of a conductor or semiconductor substrate.
- 4. The CVD method according to claim 2, wherein an alkylaluminum hydride is used as the starting gas, which is reacted with hydrogen to form a metal film mainly composed of aluminum, on the surface of a conductor or semiconductor substrate.
Priority Claims (5)
Number |
Date |
Country |
Kind |
3-345057 |
Dec 1991 |
JPX |
|
3-345066 |
Dec 1991 |
JPX |
|
4-338799 |
Dec 1992 |
JPX |
|
4-338800 |
Dec 1992 |
JPX |
|
4-338803 |
Dec 1992 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 07/995,039 filed Dec. 22, 1992 now U.S. Pat. No. 5,447,568.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5445568 |
Hayakawa |
Sep 1995 |
|
5462014 |
Awaya et al. |
Oct 1995 |
|
Foreign Referenced Citations (5)
Number |
Date |
Country |
0382987 |
Aug 1990 |
EPX |
0419939 |
Sep 1990 |
EPX |
0435088 |
Jul 1991 |
EPX |
2195663 |
Apr 1988 |
GBX |
9012900 |
Nov 1990 |
WOX |
Divisions (1)
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Number |
Date |
Country |
Parent |
995039 |
Dec 1992 |
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