Claims
- 1. A positive photoresist composition comprising:1) a resin binder comprising acid labile groups, 2) a photoacid generator that is an onium compound, a sulfonate compound, a nitrobenzyl ester compound, an s-triazine compound or a halogenated non-ionic compound, and 3) a photospeed control agent that is selected from the groups consisting of: i) a compound of the formula N(R1)4A where each R1 is independently substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl; and A is a counter anion of a halide, a substituted or unsubstituted sulfonate or a substituted or unsubstituted hydroxyalkanoyl; or ii) a phosphonium compound.
- 2. The photoresist of claim 1 wherein the photoacid generator is a sulfonate salt.
- 3. The photoresist of claim 1 wherein the photospeed control agent is a phosphonium compound.
- 4. The photoresist of claim 1 wherein the photoacid generator is selected from the group consisting of:
- 5. The photoresist of claim 1 wherein the resin binder is a phenol-alkyl acrylate copolymer.
- 6. The photoresist of claim 1 wherein the resin binder comprises units x and y of the structure: wherein R is substituted or unsubstituted alkyl having 1 to about 18 carbon atoms.
- 7. A method for controlling photospeed of a chemically amplified positive photoresist, comprising:(a) providing a positive photoresist composition comprising a resin binder with acid labile groups, a photoacid generator, and a photospeed control agent; (b) determining the photospeed of the photoresist composition, and adjusting the photospeed to a desired value by altering the amount of photospeed control agent in the composition.
- 8. The method of claim 7 wherein an additional amount of the photospeed control agent is added to the composition to adjust the photospeed.
- 9. The method of claim 7 wherein the photospeed control agent has a pKa of about 10 or greater in non-salt form.
- 10. The method of claim 7 wherein the photospeed control agent is selected from the group consisting of:1) a compound of the formula N(R1)4A where each R1 is independently substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl; and A is a counter anion of a halide, a substituted or unsubstituted sulfonate or a substituted or unsubstituted hydroxyalkanoyl; or 2) a phosphonium compound.
- 11. A method for forming a photoresist relief image comprising:applying a coating layer of the photoresist composition of claim 1 onto a substrate; and exposing and developing the photoresist layer on the substrate to provide a relief image.
- 12. An article of manufacture comprising a substrate having coated thereon the photoresist composition of claim 1.
- 13. The article of claim 12 wherein the substrate is a microelectronic wafer.
- 14. The method of claim 7 wherein the photoacid generator compound is an onium compound, a sulfonate compound, a nitrobenzyl ester compound, an s-triazine compound or a halogenated non-ionic compound.
- 15. The method of claim 7 wherein the photoacid generator is selected from the group consisting of:
- 16. The method of claim 7 wherein the resin binder is a phenol-alkyl acrylate copolymer.
- 17. The method of claim 7 wherein the resin binder comprises units x and y of the structure: wherein R is substituted or unsubstituted alkyl having 1 to about 18 carbon atoms.
- 18. The method of claim 7 wherein the photospeed control agent is a sulfonate salt.
- 19. The method of claim 7 wherein the photospeed control agent is a phosponium compound.
- 20. A positive photoresist composition comprising:1) a resin binder comprising acid labile groups, 2) a photoacid generator that is other than a diazoguinone, and 3) a photospeed control agent that is selected from the groups consisting of: i) a compound of the formula N(R1)4A where each R1 is independently substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl; and A is a counter anion of a halide, a substituted or unsubstituted sulfonate or a substituted or unsubstituted hydroxyalkanoyl; or ii) a phosphonium compound.
Parent Case Info
This application is a continuation of application Ser. No. 08/567,630 filed on Dec. 5, 1995 U.S. Pat. No. 5,879,856.
US Referenced Citations (10)
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Sep 1994 |
DE |
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EP |
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Continuations (1)
|
Number |
Date |
Country |
Parent |
08/567630 |
Dec 1995 |
US |
Child |
09/128797 |
|
US |