Patent Grant
7005217
This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to the design of the masks that are used during photolithographic processing of integrated circuits.
As integrated circuit technologies continually push toward placing more devices into smaller spaces, new photolithography methods and systems are required to resolve the increasingly smaller features. These new methods are generally called resolution enhancement techniques, and include methods such as attenuated phase shift masks and alternating phase shift masks. Attenuated phase shift masks and alternating phase shift masks were developed during the 1980's but failed to provide the manufacturable solutions to implement them successfully. The standard 6% attenuated phase shift mask technique failed to extend current lithography techniques without a reduction in wavelength, and the alternating phase shift mask technique was plagued with design, mask manufacturing, and lens aberration issues.
It was later discovered that, by increasing the background transmission of a mask, the attenuated phase shift mask technique could provide improved resolution and reduce the mask error enhancement factor, but this also introduced a new manufacturing issue. The higher transmission background required embedded chrome patches to prevent contrast from leaking into unwanted areas. The embedded patches of chrome added additional complexity and cost to implement this technique. This resolution enhancement technique is generally called embedded attenuated phase shift masks.
The chrome in an embedded attenuated phase shift mask requires additional mask and etch process steps to manufacture, and any errors in either the layout placement or the manufacture placement results in contrast leakage. As the feature pitches on the mask vary from dense to isolated feature types, an intelligent or contrast detecting algorithm is required for chrome placement. Also, the complexity of chrome repair increases for damaged chrome features that are in proximity to other chrome features. The chrome has to be placed close enough to the primary features such as contacts, vias, and trenches, to block any unwanted contrast with any high transmission scenario.
There is a need, therefore, for a mask that doesn't require chrome or another opaque material to completely block transmission, and which can still be used with high transmission backgrounds.
The above and other needs are met by a photolithographic mask for receiving light at a wavelength, phase, and intensity and printing a desired image on a substrate with an optical system. The mask is formed on an optically transmissive substrate, called a mask blank. The mask blank is preferably about one hundred percent transmissive of the light intensity at the wavelength. At least one layer of an attenuated material that is at least partially transmissive to the wavelength of the light is formed on the optically transmissive substrate. The at least one layer of the attenuated material preferably blocks from about fifty percent to about ninety-four percent of the intensity of the light at the wavelength, whereas the prior art masks use materials that block about six percent of the intensity of the light at the wavelength. Chrome, by contrast, blocks one hundred percent of the light at the wavelength.
The attenuated material defines three feature types on the mask, including a primary image having edges, a scattering bar preferably disposed near the edges of the primary image, and a background region. The primary image represents the desired image to be printed on the substrate. The scattering bar is adapted to enhance a contrast of the primary image and to at least reduce the intensity of the light at the edges of the primary image. The background region is adapted to block the light without using a material that is non transmissive to the light, such as chrome. By “block the light” it is meant that the background region substantially and preferably reduces the intensity of the light passing through the background region to about zero, or at least to a point where it does not substantially expose the photoresist on the wafer.
In this manner, opaque chrome patches, or patches of another non transmissive material, are not required to block the light, regardless of the background attenuation. Thus, only the attenuated material need be used to both resolve small images and provide dark field areas, instead of adding additional opaque layers such as chrome. This both reduces the cost and complexity of the mask.
Further advantages of the invention are apparent by reference to the detailed description when considered in conjunction with the figures, which are not to scale so as to more clearly show the details, wherein like reference numbers indicate like elements throughout the several views, and wherein:
With reference now to
It is appreciated that in many places in this description, reference is made to the background portion 12 blocking the light from reaching the integrated circuit. However, this complete blockage of light is only one specific embodiment, and in alternate embodiments the intensity of the light that passes through the background portion 12 of the mask 10 is not completely blocked, but the effective intensity of the light passing through the background portion 12 is so reduced that it is insufficient to expose the photoresist that is on the integrated circuit substrate. Thus, all such references to completely blocking the light are understood to also include those cases where the intensity of the transmitted light is reduced to the point that it does not expose the photoresist.
The first feature type 14, being the primary pattern feature type, is intended to resolve at the wafer plane, or in other words on the substrate that receives the image, and is defined by removal of the attenuating transmissive material, thereby allowing 100% transmission. The second feature type 13, known as but not limited to sub-resolution features such as scattering bars, is also defined by the removal of the attenuating transmissive material but is not intended to resolve at the wafer plane. The second feature type 13 is intended to increase the contrast of the first feature type while reducing the background intensity. The third feature type 12, or in other words the background region, is again defined by removal of the attenuating transmissive material and is again not intended to resolve at the wafer plane. The third feature type 12 is a diffraction grating, at least reducing and preferably eliminating any background intensity, and is preferably optically optimized for a given wavelength, illumination source, and transmission intensity. The second feature type 13 is preferably placed between the first 14 and third 12 feature types for optimal primary pattern 14 fidelity. Formation of the first, second, and third feature types 12, 13, and 14 can be accomplished with a single exposure step during the mask fabrication process.
The diffraction grating generated as part of the third feature type 14 can reduce and preferably cancel the background intensity by two approaches. The first approach is to generate a grating with a pitch smaller than the resolution limit of the optical system along with off-axis illumination, annular, quadrapole, or QUASAR, for example. As
The second diffraction grating approach to create a background 12 can be used with any illumination technique but requires a grating pitch and shape to match the 0° and 180° diffraction orders with respect to the magnitude and locations at the entrance pupil of the projection lens. With this approach the first orders can be canceled along with the zero order as depicted in
The background portion 12, scattering bars 13, and pattern portion 14 are all preferably formed of regions 18 of a transmissive material that attenuate the light as it passes through the transmissive material. Most preferably the transmissive material is formed at a thickness such that it alters the phase of the light by about one hundred and eighty degrees as the light passes through the transmissive material, relative to the light that does not pass through the transmissive material. Thus, interference patterns are set up between the light that passes through the regions 18 and the light that passes only through the substrate 16. These interference patterns tend to cancel a portion of the light, or in other words reduce the intensity of the light as explained above, as it passes through the mask 10.
In the background portions 12 of the mask 10, the regions 18 are positioned so as to cancel or reduce the intensity of all of the light that passes through the background portions 12 of the mask 10, while in the pattern portions 14 of the mask 10, the regions 18 are positioned so as to form desired patterns in the light that passes through the pattern portions 14 of the mask 10 and reaches the integrated circuit substrate.
By adjusting the spacing of the regions 18, the phase inversions of the light passing through the background portions 12 of the mask 10 have nearly a zero intensity at the wafer plane, as depicted, while the phase inversions of the light passing through the pattern portions 14 of the mask 10 produce very small areas where the intensity of the light at the wafer plane is high enough to expose the photoresist on the integrated circuit substrate. Thus, the phase inversions in the background portions 12 are used to cancel exposure of the photoresist, while the phase inversions in the pattern portions 14 are used to enhance the resolution of features that is possible with the wavelength of light being used. Sub resolution features of the second type 13 may be placed near the pattern regions 14 to enhance primary image contrast, while reducing the background intensity.
Thus, the mask 10 as depicted in
The dark field high transmission chromeless background technique described herein provides increased resolution without chrome patches, or patches of other optically opaque material. The technique eliminates the need for the chrome regions by using instead phase intensity cancellation or diffraction dispersion in the dark field regions. This technique is a low cost alternative for dark field high transmission attenuated phase shift masks since only a single mask pattern and mask etch process is all that is required to form all three feature types 12, 13, and 14. As used herein, the term “dark field” is defined as any process layer that passes minimal source intensity during exposure. Historically, hole layers, such as contacts and vias, and trench layers, such as damascene metal structures, were defined as dark field.
The mask utilizes phase intensity cancellation or diffraction dispersion outside of the projection system to darken the background instead of chrome in a dark field application as shown in
For example, the wafer critical dimensions will vary about 31 nanometers for about ten nanometers of variation on a 130 nanometer binary mask, the wafer critical dimensions will vary about twenty-eight nanometers for about ten nanometers of variation on a 130 nanometer 5% attenuated mask, and the wafer critical dimensions will vary about twenty nanometers for about ten nanometers of variation on a 130 nanometer 30% attenuated mask. Although the smaller mask error factor is desired for dark field applications, using a high transmission mask is not desirable without an intensity cancellation technique, such as is disclosure herein.
In this manner the mask may be formed with only a single attenuated layer of a transmissive material such as molybdenum silicide (MoSi) or titanium nitride silicon nitride (TiNSiN), without using chrome as a transmission blocking layer, as depicted in
The phase cancellation background features are optimal when the intensity of the phase shifting regions is of equal intensity to the non phase shifting regions, which produces a zero transmission result. Likewise, diffracting the orders of light outside the projection lens using off-axis illumination produces a zero transmission result. The results of these techniques are depicted in
Preferably, the regions 18 between the blocks are about one hundred and eighty degrees out of phase with the actinic wavelength (W), and the pitch of the blocks is below the resolution limit of the optical lithographic system. The resolution limit can be defined from Raleigh's criterion as k1(W/NA), where the k1 is a constant (classically k1 was 0.61) and NA is the numerical aperture of the projection lens of the optical lithographic system (NA can be defined as sinθ of the optical axis from mask plane to the edge of the entrance pupil of the projection lens), and W is the wavelength of the light.
As long as the pitch is below the resolution limit of the optical lithographic system, the background features can be of any size desired by the mask manufacturer, making the features relatively easy to form. The shapes and sizes of the background features can vary, but are best arrayed referenced to minimize data size, since millions of features are generated in this process. The only requirement is that the background structures are arrayed at a pitch optimal for reduced or zero transmission as shown in
Scattering bars 13 as shown in
Thus, the chromeless mask 10 of the present invention provides several benefits, including a reduction in mask plane heating due to the lack of absorber material, a low cost high resolution enhancement technique, simple mask processing technique, low mask error enhancement factors when used with high transmission lithography, removal of the defect susceptible chrome from the mask, and low or zero intensity background for low and high transmission attenuated phase shift mask applications.
The foregoing description of preferred embodiments for this invention have been presented for purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the precise form disclosed. Obvious modifications or variations are possible in light of the above teachings. The embodiments are chosen and described in an effort to provide the best illustrations of the principles of the invention and its practical application, and to thereby enable one of ordinary skill in the art to utilize the invention in various embodiments and with various modifications as is suited to the particular use contemplated. All such modifications and variations are within the scope of the invention as determined by the appended claims when interpreted in accordance with the breadth to which they are fairly, legally, and equitably entitled.
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| Number | Date | Country | |
|---|---|---|---|
| 20040197674 A1 | Oct 2004 | US |
