Claims
- 1. A processing chamber, comprising:
a fixed substrate support having a substrate receiving surface; a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough; and a gas distribution assembly disposed over the fixed substrate support.
- 2. The process chamber of claim 1, wherein the one or more apertures provide fluid communication between the pumping channel and a processing zone between the fixed substrate support and the gas distribution assembly.
- 3. The process chamber of claim 1, wherein the pumping ring is shaped and sized so that the one or more apertures are positioned below a plane defined by the substrate receiving surface.
- 4. The processing chamber of claim 1, wherein the apertures are distributed evenly around the pumping ring.
- 5. The processing chamber of claim 1, wherein the position of the apertures varies around the pumping ring.
- 6. The processing chamber of claim 1, wherein the apertures have uniform size.
- 7. The processing chamber of claim 1, wherein the apertures having varying size.
- 8. The processing chamber of claim 1, further comprising a gas-flow diffuser disposed between the apertures of the pumping ring and the substrate receiving surface.
- 9. The processing chamber of claim 8, wherein the gas-flow diffuser is disposed on the pumping ring.
- 10. The processing chamber of claim 8, wherein the gas-flow diffuser extends partially around the perimeter of the substrate receiving surface.
- 11. The processing chamber of claim 8, wherein the gas-flow diffuser extends entirely around the perimeter of the substrate receiving surface.
- 12. The processing chamber of claim 8, wherein the gas-flow diffuser has different heights.
- 13. The processing chamber of claim 8, wherein the gas-flow diffuser is tapered.
- 14. The processing chamber of claim 8, wherein the gas-flow diffuser has a uniform height.
- 15. The processing chamber of claim 1, further comprising a gap between the substrate support and the pumping channel.
- 16. The processing chamber of claim 15, further comprising a gas port below the substrate support, the gas port adapted to provided a bottom purge gas through the gap between the substrate support and the pumping channel.
- 17. The processing chamber of claim 1, wherein the spacing between the substrate support and the gas distribution assembly is about 0.75 inches or less.
- 18. The processing chamber of claim 1, further comprising a resistive heating element disposed in the substrate support.
- 19. A processing chamber, comprising:
a first assembly comprising a first assembly body and a fixed substrate support having a substrate receiving surface; a second assembly comprising a gas distribution assembly; a hinge assembly coupling the first assembly and the second assembly, wherein the first assembly and the second assembly can be selectively positioned between an open position and a closed position; and the first assembly body shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support.
- 20. The processing chamber of claim 19, wherein an upper surface of the first assembly body is angled.
- 21. The processing chamber of claim 19, wherein the portion of the first assembly body below the substrate receiving surface provides access below the substrate support.
- 22. The processing chamber of claim 19, wherein a portion of the first assembly body is above the substrate receiving surface.
- 23. The processing chamber of claim 19, wherein a portion of the first assembly body is above the substrate receiving surface and forms a first partial sidewall.
- 24. The processing chamber of claim 23, wherein the second assembly comprises a second assembly body, a portion of the second assembly body forming a second partial sidewall.
- 25. The processing chamber of claim 24, wherein a processing zone is defined between the fixed substrate support, the gas distribution assembly, the first partial sidewall, and the second partial sidewall.
- 26. The processing chamber of claim 23, further comprising a slit valve formed in the first partial sidewall of the first assembly body.
- 27. The processing chamber of claim 19, further comprising a resistive heating element disposed in the substrate support.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. Provisional Patent Application Serial No. 60/352,190, filed Jan. 26, 2002, which is herein incorporated by reference.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60352190 |
Jan 2002 |
US |