Patent Application
20190357364
The invention relates to a component carrier and a method of manufacturing a component carrier.
In the context of growing product functionalities of component carriers equipped with one or more electronic components and increasing miniaturization of such components as well as a rising number of components to be mounted on the component carriers such as printed circuit boards, increasingly more powerful array-like components or packages having several components are being employed, which have a plurality of contacts or connections, with ever smaller spacing between these contacts. Focused dissipation of heat generated by such components and the component carrier itself during operation becomes an increasing issue. At the same time, component carriers shall be mechanically robust so as to be operable even under harsh conditions.
Moreover, it may be desired to efficiently manufacture a thermal via of a component carrier while at the same time ensuring a proper heat dissipation.
There may be a need for a component carrier being simple in manufacture while simultaneously ensuring proper heat removal.
According to an exemplary embodiment of the invention, a component carrier is provided which comprises at least one electrically conductive layer structure and at least one electrically insulating layer structure, a through-hole extending through the at least one electrically insulating layer structure, and highly thermally conductive material filling only part of the through-hole so that a recess is formed which is not filled with the highly thermally conductive material and which extends at least from an outer face of the at least one electrically insulating layer structure into the through-hole, wherein a diameter, B, of the recess at a level of the outer face of the at least one electrically insulating layer structure and a width, A, of a web (or another thermal connection portion) of the highly thermally conductive material at the level of the outer face of the at least one electrically insulating layer structure fulfill the condition B is larger than A.
According to another exemplary embodiment of the invention, a method of manufacturing a component carrier is provided, wherein the method comprises forming a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure, forming a through-hole extending through the at least one electrically insulating layer structure, filling only part of the through-hole with highly thermally conductive material so that a recess is formed which is not filled with the highly thermally conductive material and which extends at least from an outer face of the at least one electrically insulating layer structure into the through-hole, wherein the filling is carried out so that a diameter, B, of the recess at a level of the outer face of the at least one electrically insulating layer structure and a width, A, of a web of the highly thermally conductive material at the level of the outer face of the at least one electrically insulating layer structure fulfill the condition B is larger than A.
In the context of the present application, the term “component carrier” may particularly denote any support structure which is capable of accommodating one or more components thereon and/or therein for providing mechanical support and/or electrical connectivity. In other words, a component carrier may be configured as a mechanical and/or electronic carrier for components. In particular, a component carrier may be one of a printed circuit board, an organic interposer, and an IC (integrated circuit) substrate. A component carrier may also be a hybrid board combining different ones of the above mentioned-types of component carriers.
In the context of the present application, the term “layer structure” may particularly denote a continuous layer, a patterned layer or a plurality of non-consecutive islands within a common plane.
In the context of the present application, the term “highly thermally conductive material filling only part of the through-hole extending to at least one electrically insulating layer structure” may particularly denote a material which has a significantly higher value of the thermal conductivity than ordinary dielectric material of component carrier stacks. For example, prepreg (as an example for a dielectric material of component carrier stacks) may have a relatively poor thermal conductivity of about 0.3 W/mK. The highly thermally conductive material should have a thermal conductivity of at least several times of this value. For example, the highly thermally conductive material may have a thermal conductivity of at least 3 W/mK, preferably of at least 10 W/mK, more preferably of at least 100 W/mK. A preferred material for the highly thermally conductive material is copper, or includes silver- or aluminium particles. Preferred highly thermally conductive material and electrically insulating materials comprise one of the following: Resin (optionally comprising reinforcing particles such as glass spheres), ceramic particles, carbon or carbon-based particles.
According to an exemplary embodiment of the invention, a component carrier is provided which has a thermal through-hole extending through dielectric component carrier material and being only partially, i.e. not entirely, filled with highly thermally conductive material for heat removal, heat dissipation, heat spreading and/or other kind of thermal management of the component carrier. It has been surprisingly found that a proper removal of heat out of the component carrier neither requires necessarily a (in many cases over-dimensioned) massive copper inlay (as in conventional approaches) nor a thermal via which is really fully filled with copper material. In contrast to this, it has turned out to be sufficient to fill a through-hole extending through an electrically insulating layer structure of the component carrier only partially with highly thermally conductive material (such as copper) while leaving at least one recess adjacent to a thermal access at an outer portion of the through-hole unfilled or free of highly thermally conductive material.
In the following, further exemplary embodiments of the method and the component carrier will be explained.
In an embodiment, if the mentioned recess is properly dimensioned in relation to a thickness of a remaining web of highly thermally conductive material adjacent to the recess, the heat removal properties of the component carrier still comply even with demanding requirements in terms of thermal management. At the same time, an only partial filling of a thermal through-hole with highly thermally conductive material may significantly simplify and accelerate the manufacturing process of the component carrier. A reason for this is that the filling of a through-hole with highly thermally conductive material such as copper usually requires the execution of a sequence of many plating procedures, each of which adding a further portion of the highly thermally conductive material into the through-hole. However, an excessive repetition of such plating procedures renders the manufacturing process cumbersome and involves a high effort. The present inventors have surprisingly found that a design rule, according to which a diameter of the recess at the exterior border of the electrically insulating layer structure penetrated by the through-hole is larger than a width of a remaining web of the highly thermally conductive material at the mentioned height level still allows sufficient heat removal, if the width of the web is not too narrow, in particular is more than 5% or preferably 10% of the diameter of the recess. Manufacturing a component carrier following the mentioned design rule may hence allow keeping the manufacturing effort reasonably low while simultaneously ensuring a highly efficient heat removal capability of the component carrier.
More specifically, an exemplary embodiment of the invention may pro-vide a component carrier with a reliable thermal build up without massive copper inlay. An exemplary embodiment of the invention is based on the finding that a void-free filling is challenging in case of large plated through-holes. The inventors have surprisingly found that sufficiently small exterior voids on top and/or bottom of a plated through-hole do not negatively impact the heat transfer while significantly simplifying the manufacturing procedure. It has turned out that the maximum of heat which can be transferred is predominantly limited by the thermal vias on the upper or lower layers connecting the larger via being partially filled with highly thermally conductive material. Thus, it may be sufficient that the area of the transition copper (corresponding to the web) is bigger than the thermal vias on top and/or on bottom. The recess, sink mark or dimple may extend at least into an electrically conductive layer structure (such as a copper layer) of a top and/or a bottom layer, but can also reach into the electrically insulating layer structure (such as a core) of the component carrier.
For combining an efficient manufacturing process with a proper heat removal capability of the component carrier, it may hence be advantageous to select the diameter, B, of the recess (which may also be denoted as sink mark or dimple) to be larger than the length, A, of a remaining web of the highly thermally conductive material (in particular transition copper on the surface of the core or other electrically insulating layer structure on at least one side). As a further advantageous side effect, an enhanced reliability in terms of interlayer adhesion of a component carrier layer stack may be obtained by increasing the contact surface area of a further (for instance electrically insulating) layer structure extending into the recess. In other words, by filling the mentioned recess(es) with a further electrically insulating layer structure, the adhesion forces between the latter further electrically insulating layer structure and adjacent material may be enhanced due to the increased connection surface. Thus, a gist of an exemplary embodiment of the invention is that there is no need for a complete via-filling, as sought by conventional approaches. In contrast to this, a properly defined partial filling of a thermal through-hole with highly thermally conductive material may be sufficient. Since a connection of laser vias to one or more inner layers of a layer stack of the component carrier can be accomplished much easier by interlayer plating with copper in comparison with an embedding of a macroscopic copper inlay, exemplary embodiments may also render the manufactured component carrier compact without compromising on thermal performance. At the same time, it may be possible to obtain an enhanced intra-stack adhesion.
In an embodiment, the design rule may require compliance with the more strict condition A is larger than B/20, in particular A is larger than B/10. Following this design rule allows obtaining a specifically pronounced thermal performance while keeping the manufacturing process sufficiently simple.
In an embodiment, a ratio between a vertical height, D, and a maximum horizontal thickness, C, of the through-hole is in a range between 1 and 15, in particular in a range between 1.5 and 10. Since the through-hole is intended for use as a thermal via (in particular substituting a conventional massive copper inlay), the through-hole may extend through an uncommonly thick electrically insulating layer structure and may have the mentioned very high aspect ratio.
In a preferred embodiment, the through-hole is substantially circular cylindrically. Such a cylindrical through-hole may be manufactured by mechanically processing the corresponding one or more electrically insulating layer structures, in particular by mechanically drilling using a rotating drill. Correspondingly, the method may comprise forming the through-hole by mechanically drilling through the at least one electrically insulating layer structure. A mechanical formation of a drilled through-hole is highly advantageous for forming thermal through-holes with uncommonly large size for obtaining a very high thermal performance.
However, it may be alternatively also possible to form the through-hole by laser processing, in particular by laser drilling. In such an embodiment, the shape of the through-hole may deviate from a circular cylindrical shape, for instance may be conically or may be of frustoconical shape (as a consequence of the energy impact of a laser beam in the electrically insulating layer structure).
In an embodiment, a thickness of the at least one electrically insulating layer structure through which the through-hole extends is larger than 400 μm, in particular is in a range between 600 μm and 2000 μm. In other words, the vertical extension of the through-hole filled partially with highly thermally conductive material may be very high, thereby being capable of efficiently transporting heat out of the component carrier during operation.
In an embodiment, a value of the thermal conductivity of the highly thermally conductive material is at least 50 W/mK, in particular is at least 100 W/mK, more particularly is at least 200 W/mK. Most preferred is the use of copper for the highly thermally conductive material, since copper has an extraordinarily high thermal conductivity while simultaneously being properly compatible with component carrier manufacturing technology (in particular PCB technology). Moreover, copper can be properly inserted into a through-hole by plating, in particular by carrying out a sequence of plating procedures.
In an embodiment, a further recess is formed in the highly thermally conductive material opposing the recess, wherein the further recess is not filled with the highly thermally conductive material and extends at least from another outer face of the at least one electrically insulating layer structure into the through-hole. When an empty through-hole extending through an electrically insulating layer structure and being open at both opposing ends is filled with highly thermally conductive material such as copper by plating, the through-hole filling may start in a central portion of the hole in a first plating procedure. In subsequent plating procedures, filling of the through-hole may then continue along both directions (i.e. upwardly and downwardly) from the central portion. When the filling procedure is terminated before completely filling the through-hole with highly thermally conductive material, this may result in the formation of two opposing recesses at an open bottom and at an open top of the through-hole. According to exemplary embodiments, any property or treatment or design rule or condition disclosed in the present application for the recess may be applied also to the further recess, and vice versa.
In an embodiment, a diameter, E, of the further recess at a level of the other outer face of the at least one electrically insulating layer structure and a width, F, of another web of the highly thermally conductive material at the level of the other outer face of the at least one electrically insulating layer structure fulfill the conditions E>F and F>E/20, in particular F>E/10. Thus, the above described design rule for the recess versus the web at an open top end of the through-hole may be applied correspondingly to the further recess and the further web at a bottom end of the through-hole. According to exemplary embodiments, any property or treatment or design rule or condition disclosed in the present application for the web may be applied also to the other web, and vice versa.
In an embodiment, B substantially equals E and/or A substantially equals F. More specifically, dimensions and/or shape of the further recess may correspond to dimensions and/or shape of the recess. Accordingly, dimensions and/or shape of the other web may substantially correspond to dimensions and/or shape of the web. This may be the result of a common and symmetric manufacturing procedure in terms of partially filling the through-hole with highly thermally conductive material starting from a center of the through-hole.
In an embodiment, the highly thermally conductive material with the recess and with the further recess is symmetrical with respect to a horizontal plane extending through a center of the at least one electrically insulating layer structure through which the through-hole extends. This allows obtaining spatially homogeneous properties of the component carrier in terms of heat removal performance and also mechanical integrity.
In an embodiment, a cross section of the highly thermally conductive material with the recess and the further recess is a substantially H-shaped structure (compare
In an embodiment, a ratio between a vertical distance, G, between an innermost end of the recess (i.e. a bottom of the dimple) and an innermost end of the further recess (i.e. a bottom of the further dimple) on the one hand and a height, D, of the through-hole on the other hand is in a range between 30% and 95%, in particular is in a range between 50% and 60%. It has turned out that the mentioned ranges are a proper trade-off between thermal performance on the one hand and a quick and simple manufacturing process on the other hand. For example, the vertical distance, G, may be at least 100 μm, in particular at least 300 μm. The entire height, D, may for example be at least 400 μm, preferably at least 2000 μm.
In an embodiment, the recess and/or the further recess is filled (in particular partially or entirely) with a dielectric material, in particular a plug paste. Filling up the recess(es) with dielectric material (such as resin) planararizes the component carrier and therefore improves mechanical integrity.
In another embodiment, the recess and/or the further recess may be filled (in particular partially or entirely) with an electrically conductive material, in particular copper.
In an embodiment, the component carrier comprises at least one further electrically insulating layer structure. The latter may be connected to an exterior surface of the at least one electrically insulating layer structure, of the at least one electrically conductive layer structure, and/or of further highly thermally conductive material. The at least one further electrically insulating layer structure may fill the recess and/or the further recess, respectively (see for instance
In an embodiment, an area of a main surface of the at least one further electrically insulating layer structure facing at least one of the recess and the further recess is larger (preferably by 0.1% to 500%) than a hypothetic planar area of said main surface in the absence of the recess or the further recess. When the dielectric layer structure is not only connected to an exterior main surface of the layer stack but also flows into the recess or the further recess, the connection area over which adhesion forces may act may be increased. This improves the mechanical performance of the component carrier.
In another embodiment, the component carrier comprises also at least one further electrically insulating layer structure. The latter may be connected to an exterior surface of the at least one electrically insulating layer structure, the at least one electrically conductive layer structure, and/or further highly thermally conductive material. The at least one further electrically insulating layer structure may be planar (see for instance
In an embodiment, the recess may extend through only a part of the electrically insulating layer structure so as to form a blind hole. In another embodiment of the invention however, the above-mentioned recess and further recess are connected to one another in the interior of the through hole so as to form a more narrow inner through hole. In an embodiment, a maximum horizontal thickness, C, of the through-hole is at least 100 μm. For instance, the maximum horizontal thickness, C, may be in a range between 100 μm and 700 μm. Since the through-hole filled partially with highly thermally conductive material is provided for the purpose of promoting the thermal performance of the component carrier, the diameter of the through-hole may be very high.
In an embodiment, a maximum depth of at least one of the recess and the further recess is at least 100 μm. For example, the maximum depth of the respective recess may be in a range between 100 μm and 300 μm. Thus, a significant amount of highly thermally conductive material may lack in the through-hole. This allows manufacturing the component carrier quickly and simply, in particular with a low number of plating procedures. Surprisingly, the heat removal capability is not significantly deteriorated by keeping such relatively large recesses free of highly thermally conductive material.
In an embodiment, the highly thermally conductive material has a further web at the level of the outer face of the at least one electrically insulating layer structure which further web is arranged opposing the web in a horizontal direction and separated from the web by the recess. In other words, the recess may then be located between the web and the further web. In a cross-sectional view, an exterior portion of the through-hole may be composed of the central recess (which may have a substantially parabolic shape, for example with rounded edges) being surrounded on two opposing sides by a respective web or further web. Descriptively speaking, each of the webs may correspond to a heat removal path from an interior to an exterior of the component carrier. In fact, highly thermally conductive material may circumferentially surround the recess or further recess, for instance forming a hollow conical body. According to exemplary embodiments, any property or treatment or design rule or condition disclosed in the present application for the web may be applied also to the further web, and vice versa.
In an embodiment, the further web has a width, I, at the level of the outer face of the at least one electrically insulating layer structure fulfilling the conditions B>I and I>B/20, in particular I>B/10. Thus, the above-described design rule concerning the web may also apply to the further web. This may ensure a spatially symmetric and homogeneous heat transfer and may prevent undesired hot spots.
In an embodiment, the web and the further web are arranged symmetrical with respect to a vertical plane extending through a central axis of the through-hole. This architecture allows obtaining a homogeneous heat removal and even heat spreading.
In an embodiment, the highly thermally conductive material in the through-hole is continuously connected via the web (and optionally also via the further web and/or via the other web) with further highly thermally conductive material covering at least part of a main surface of the at least one electrically insulating layer structure. The highly thermally conductive material and the further highly thermally conductive material (for instance both copper) may be formed simultaneously by the above described plating procedure(s). It is also possible that such further highly thermally conductive material is also located on the other main surface of the at least one electrically insulating layer structure, connected with one or two webs (which may form part of a circumferential structure) juxtaposed to the further recess.
In an embodiment, the further highly thermally conductive material is shaped as a layer which is interrupted by the recess. In such an embodiment, the recess partially extends into the through hole and particularly traverses the further highly thermally conductive material. Additionally or alternatively, still another highly thermally conductive material shaped as a further layer may be interrupted, traversed or penetrated by the further recess. Thus, the mentioned additional highly thermally conductive material may be arranged on one or both of the two opposing main surfaces of the electrically insulating layer structure through which the through-hole extends.
It should be mentioned that also the further recess may be circumferentially surrounded by the highly thermally conductive material, which corresponds to the presence of two webs in a cross-sectional view thereof.
In an embodiment, the method comprises filling the through-hole only partially with the highly thermally conductive material by carrying out a number of sequential plating procedures. For instance, the plating procedures may be terminated upon fulfilling the above-described conditions B>A and A>B/20 and, if applicable, the above-described condition B>I and I>B/20, etc.
As mentioned above, at least one component may be surface mounted on and/or embedded in the component carrier. For instance, such a component may be a heat source during operation of the component carrier. The heat generated by such a component may be removed from the component carrier also by the highly thermally conductive material partially filling the through-hole. More generally, at least one component which may be embedded in and/or surface mounted on the component carrier can be selected from a group consisting of an electrically non-conductive inlay, an electrically conductive inlay (such as a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (for example a heat pipe), a light guiding element (for example an optical waveguide or a light conductor connection), an electronic component, or combinations thereof. For example, the component can be an active electronic component, a passive electronic component, an electronic chip, a storage device (for instance a DRAM or another data memory), a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter (for example a DC/DC converter or an AC/DC converter), a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, a sensor, an actuator, a microelectromechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductance, a battery, a switch, a camera, an antenna, a logic chip, a light guide, and an energy harvesting unit. However, other components may be embedded in the component carrier. For example, a magnetic element can be used as a component. Such a magnetic element may be a permanent magnetic element (such as a ferromagnetic element, an antiferromagnetic element or a ferrimagnetic element, for instance a ferrite base structure) or may be a paramagnetic element. However, the component may also be a further component carrier, for example in a board-in-board configuration. One or more components may be surface mounted on the component carrier and/or may be embedded in an interior thereof. Moreover, also other than the mentioned components may be used as component.
In an embodiment, the component carrier comprises a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure(s) and electrically conductive layer structure(s), in particular formed by applying mechanical pressure, if desired supported by thermal energy. The mentioned stack may provide a plate-shaped component carrier capable of providing a large mounting surface for further components and being nevertheless very thin and compact.
In an embodiment, the component carrier is shaped as a plate. This contributes to the compact design, wherein the component carrier nevertheless provides a large basis for mounting components thereon. Furthermore, in particular a naked die as example for an embedded electronic component, can be conveniently embedded, thanks to its small thickness, into a thin plate such as a printed circuit board.
In an embodiment, the component carrier is configured as one of the group consisting of a printed circuit board, and a substrate (in particular an IC substrate).
In the context of the present application, the term “printed circuit board” (PCB) may particularly denote a component carrier (which may be plate-shaped (i.e. planar), three-dimensionally curved (for instance when manufactured using 3D printing) or which may have any other shape) which is formed by laminating several electrically conductive layer structures with several electrically insulating layer structures, for instance by applying pressure, if desired accompanied by the supply of thermal energy. As preferred materials for PCB technology, the electrically conductive layer structures are made of copper, whereas the electrically insulating layer structures may comprise resin and/or glass fibers, so-called prepreg or FR4 material. The various electrically conductive layer structures may be connected to one another in a desired way by forming through-holes through the laminate, for instance by laser drilling or mechanical drilling, and by filling them with electrically conductive material (in particular copper), thereby forming vias as through-hole connections. Apart from one or more components which may be embedded in a printed circuit board, a printed circuit board is usually configured for accommodating one or more components on one or both opposing surfaces of the plate-shaped printed circuit board. They may be connected to the respective main surface by soldering. A dielectric part of a PCB may be composed of resin with reinforcing fibers (such as glass fibers).
In the context of the present application, the term “substrate” may particularly denote a small component carrier having substantially the same size as a component (in particular an electronic component) to be mounted thereon. More specifically, a substrate can be understood as a carrier for electrical connections or electrical networks as well as component carrier comparable to a printed circuit board (PCB), however with a considerably higher density of laterally and/or vertically arranged connections. Lateral connections are for example conductive paths, whereas vertical connections may be for example drill holes. These lateral and/or vertical connections are arranged within the substrate and can be used to provide electrical and/or mechanical connections of housed components or unhoused components (such as bare dies), particularly of IC chips, with a printed circuit board or intermediate printed circuit board. Thus, the term “substrate” also includes “IC substrates”. A dielectric part of a substrate may be composed of resin with reinforcing spheres (such as glass spheres).
In an embodiment, dielectric material of the at least one electrically insulating layer structure and/or at least one further electrically insulating layer structure comprises at least one of the group consisting of resin (such as reinforced or non-reinforced resins, for instance epoxy resin or Bismaleimide-Triazine resin, more specifically FR-4 or FR-5), cyanate ester, polyphenylene derivate, glass (in particular glass fibers, multi-layer glass, glass-like materials), prepreg material, polyimide, polyamide, liquid crystal polymer (LCP), epoxy-based Build-Up Film, polytetrafluoroethylene (Teflon), a ceramic, and a metal oxide. Reinforcing materials such as webs, fibers or spheres, for example made of glass (multilayer glass) may be used as well. Although prepreg or FR4 are usually preferred, other materials may be used as well. For high frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymer and/or cyanate ester resins may be implemented in the component carrier as electrically insulating layer structure.
In an embodiment, electrically conductive material of the electrically conductive layer structure comprises at least one of the group consisting of copper, aluminum, nickel, silver, gold, palladium, and tungsten. Although copper is usually preferred, other materials or coated versions thereof are possible as well, in particular coated with supra-conductive material such as graphene.
In an embodiment, the component carrier is a laminate-type body. In such an embodiment, the semifinished product or the component carrier is a compound of multiple layer structures which are stacked and connected together by applying a pressing force, if desired accompanied by heat.
In an embodiment, the component carrier has a copper layer as central element in the middle of the stack-up.
In an embodiment, the component carrier has a resin-based layer as central element in the middle of the stack-up. The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.
The illustrations in the drawings are schematically presented. In different drawings, similar or identical elements are provided with the same reference signs.
Before, referring to the drawings, exemplary embodiments will be de-scribed in further detail, some basic considerations will be summarized based on which exemplary embodiments of the invention have been developed.
According to an exemplary embodiment of the invention, a component carrier with a reliable thermal build up is provided without massive copper inlay.
In many cases, copper inlays are used for massive heat transfer within a component carrier. However, such copper inlays are in many cases oversized, as the bottleneck of a heat transfer from one side to the other is frequently a number of thermal vias connecting the inlay with the heat generating unit (such as an embedded component, like a chip, for instance a processor). Secondly, the usage of copper inlays is expensive and involves a resource consuming embedding procedure.
A gist of an exemplary embodiment of the invention is the replacement or supplementation of one or more copper inlays with plated through-holes designed in a specific manner. In particular, one or more of such through-holes may be filled partially with a highly thermally conductive material (such as copper) for proper heat transfer from top to bottom of the component carrier. With the highly thermally conductive filling according to an exemplary embodiment of the invention, it may be possible to replace conventionally used copper inlays inside a component carrier (such as a printed circuit board, PCB). Such a partial filling of through-holes with highly thermally conductive material may leave one or more recesses or voids inside on top and/or on bottom of the plated through-hole. In terms of improving heat transfer while keeping the manufacturing process simple, an exemplary embodiment of the invention replaces or supplements a conventional copper inlay with one or more copper-plated through-holes (which may also be denoted as thermal vias). In particular when such through-holes, being partially filled with highly thermally conductive material such as copper, have a sufficiently large diameter (for instance more than 100 μm), a component carrier with a high thermal performance may be obtained.
It has also turned out that exemplary embodiments of the invention simultaneously allow achieving a reliable mechanical connection of a further electrically insulating layer structure with an electrically conductive layer structure (such as a copper structure) by increasing the surface area of the insulating layer. This may be achieved by inserting material of the further electrically insulating layer structure in the mentioned recess, which increases the connection area.
An advantageous process for such kind of build-up is a plating process to be carried out for filling the through-hole with highly thermally conductive material such as copper. A conventionally desired complete void free filling of vias with a large diameter is however challenging. Advantageously, an exemplary embodiment of the invention renders its dispensable to completely fill a through-hole or via, as the present inventors have found that the maximum of heat which can be transferred is mainly limited by the thermal vias on the upper or lower layers connecting the large via. As a consequence, it is sufficient that the area of the transition copper is bigger than the thermal vias on top. This can lead to a build-up, where the recess (or sink mark or dimple) extends into an electrically conductive layer structure (such as a copper layer) from a top and/or a bottom layer. However, it can also reach into a core (or another electrically insulating layer structure) of a stack of layer structures of the component carrier. In any case, it may be highly advantageous that there is at least one bridge of thermally highly conductive materials (in particular a copper bridge) in the through-hole.
If a plain surface is desired at an exterior side of the through-hole, it is also possible to plug the dimple with a paste, an ink or something similar. Such a plug material may be electrically insulating and/or electrically conductive and/or may be thermally conductive or thermally insulating.
According to another aspect of an exemplary embodiment of the invention, an enhanced reliability in terms of a strong connection or adhesion between a further electrically insulating layer structure (such as an insulating layer which may for example be made of a resin, if desired additionally comprising reinforcing particles such as glass fibers) and an electrically conductive layer structure (such as a copper layer) may be obtained thanks to the mentioned recess in the through-hole. This can be achieved by increasing the surface area of the insulating material by extending the latter into the recess. In this context, a further obtainable advantage is a certain non-planarity achieved by not completely filling of vias.
While conventional approaches intend to have planar filled plated through-holes, exemplary embodiments of the invention are based on a design with a not planar copper-filled plated through-hole.
If desired, a final planarity may be achieved by laminating a further electrically insulating layer structure also into the recess (for instance with prepreg) and/or by plugging or grinding. Connecting a further electrically insulating layer (for instance laminating prepreg) may allow obtaining a better adhesion of an upper and/or a lower (for instance prepreg) dielectric layer to a copper-filled plated through-hole. By plugging, a connection of laser vias to an inner layer may be realized easier than with a plating of an inner layer with copper.
Exemplary applications of exemplary embodiments of the invention include component carriers having embedded and/or surface mounted at least one heat generating component such as a MOSFET (metal oxide semiconductor field effect transistor), an LED (light emitting diode), etc. Thus, a component carrier with highly advantageous thermal performance may be obtained which is also very reliable in terms of mechanical integrity.
The component carrier 100 illustrated in
A vertically extending through-hole 106 extends vertically through the entire electrically insulating layer structure 104. The through-hole 106 may be formed by a mechanical drilling process. As a result of this mechanical drilling process, the through-hole 106 has vertical sidewalls and has a substantially circular cylindrical shape. In view of its large height, D, or for example 1000 μm and its very large horizontal thickness, C, of for instance 500 μm, an aspect ratio (i.e. a ratio between D and C) of the through-hole 106 is about 2 in the shown embodiment.
Each of two opposing main surfaces of the electrically insulating layer structure 104 is covered with a respective electrically conductive layer structure 102, which may be formed for instance by plated copper material.
Highly thermally conductive material 108, plated copper in the shown embodiment, fills only part of the through-hole 106. More specifically, the through-hole 106 is partially filled with the highly thermally conductive material 108 and comprises a recess 110 at an upper open end of the through-hole 106 as well as a further recess 112 at an open lower end of the through-hole 106. Both the recess 110 and the further recess 112 are free of highly thermally conductive material 106. Thus, the recess 110 with substantially parabolic shape in the cross-sectional view of
As shown in
“B” may also be denoted as a diameter of a dimple or recess 110 at the upper end of the electrically insulating layer structure 104. “A” may also be denoted as horizontal length of a transition portion (more specifically of transition copper) of the highly thermally conductive material 108 juxtaposed to and thereby delimiting dimple or recess 110 at the upper end of the electrically insulating layer structure 104. Thus, the diameter, B, of the recess 110 (embodied as a sink mark or dimple) at height level 116 is larger than the length, A, of the transition copper on the surface of the core-type electrically insulating layer structure 104. Plugged voids in form of recess 110 and further recess 112 reach into the core-area. In alternative embodiments, plugged voids are only smaller deepenings in the copper, i.e. are more shallow than the recess 110 and the further recess 112 in
According to the preferred design rules of the present embodiment, a diameter, E, of the further recess 112 at vertical level 140 of the other outer face 120 of the electrically insulating layer structure 104 and a width, F, of another web 148 of the highly thermally conductive material 108 at the level 140 of the other outer face 120 of the electrically insulating layer structure 104 fulfill the conditions:
Moreover, the following conditions are fulfilled in the shown embodiment:
Thus, a very symmetric configuration of the highly thermally conductive material 108 is obtained.
As can be taken from
Again referring to
The web 118 and the further web 134 (and correspondingly webs 148, 150) are arranged symmetrical with respect to a vertical plane 136 extending through a central axis of the through-hole 106.
As can be taken from
As can be taken from
The web 148 and the further web 150 are arranged symmetrical with respect to the vertical plane 136.
Referring to
As a further design rule, a ratio between a vertical distance, G, between an innermost end 152 of the recess 110 and an innermost end 154 of the further recess 112 on the one hand and height, D, of the through-hole 106 on the other hand maybe around 60%. This also contributes to a proper thermal performance and a simple manufacturability. The mentioned percentage may however also be significantly larger, or may be smaller. For instance, the maximum depth, L, of the recess 110 and the further recess 112 may be 100 μm or larger.
In the embodiment of
Again referring to
As shown in
A method of manufacturing the component carrier 100 according to
As can be taken best from
According to the embodiment of
As an alternative to the embodiment of
In contrast to the conventional approach according to
It should be noted that the term “comprising” does not exclude other elements or steps and the “a” or “an” does not exclude a plurality. Also elements described in association with different embodiments may be combined.
