Claims
- 1. A contact structure for establishing electrical communication with contact targets, comprising:a plurality of contact beams each of which exhibits a spring force in a transversal direction thereof to establish a contact force when a tip of said contact beam pressed against a contact target, each of said contact beam comprising: a silicon base having at least one inclined portion which is created through an anisotropic etching process, said contact beam being projected from said silicon base; an insulation layer formed on said contact beam for electrically insulating said contact beam from said silicon base; and a conductive layer made of conductive material formed on the insulation layer in such a way that said contact beam is configured by the insulation layer and the conductive layer equally projected from said silicon base; a contact substrate for mounting said plurality of contact beams, said contact substrate having a planar surface for mounting thereon said silicon base in a manner to fix said contact beam in a diagonal direction by means of an adhesive; and a plurality of contact traces provided on the surface of said contact substrate and respectively connected to said contact beams to establish signal paths toward electrical components.
- 2. A contact structure as defined in claim 1, wherein said contact substrate is made of silicon.
- 3. A contact structure as defined in claim 1, wherein said contact substrate is made of ceramic.
- 4. A contact structure as defined in claim 1, further comprising:a plurality of via holes on said contact substrate and connected to said plurality of contact traces for establishing electrical connection between an upper surface and a bottom surface of said contact substrate; and a plurality of electrodes connected to said plurality of via holes for establishing electrical connections to said electrical components.
- 5. A contact structure as defined in claim 1, further comprising an etch stop layer between said silicon base and said insulation layer.
- 6. A contact structure as defined in claim 1, wherein said conductive layer is made of conductive metal and formed through a plating process.
- 7. A contact structure as defined in claim 1, wherein said insulation layer is made of silicon dioxide.
Parent Case Info
This is a continuation of application Ser. No. 09/240,442 filed Jan. 29, 1999.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4567433 |
Ohkubo et al. |
Jan 1986 |
A |
5355080 |
Sato et al. |
Oct 1994 |
A |
5670889 |
Okubo et al. |
Sep 1997 |
A |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/240442 |
Jan 1999 |
US |
Child |
10/058951 |
|
US |