"A Convenient Method for Non-Contact P.C.D. Lifetime Testing of Thin Silicon Wafers", by Verkuil et al., Electrochem. Soc. Abst. #615, pp. 1542-1545. |
"Direct Measurement of Flat-Bond Voltage in MOS by Infrared Excitation", by Yun, Appl. Phys. Lett. vol. 21, #5, 9/1/72, pp. 194-195. |
"Injection and Removal of Ionic Charge at Room Temperature Through the Interface of Air with SiO2", by Woods et al, J. Appl. Phys. vol. 44, #12, 12/73, pp. 5506-5511. |
"Zur Temperaturabhangigkert . . . ", by Gysae et al, Z. Physik vol. 115, pp. 296-308, 1140. |
"A Contactless Method for High-Sensitivity Measurement of p-n Junction Leakage", by Verkuil et al., IBM J. Res. & Devel, vol. 24, #3, 5/80, pp. 370-377. |
"Uses of Corona Discharges in the Semiconductor Industry", by Comizzoli, J. Electrochem. Soc., Solid-State Science and Technology, 2/87, pp. 424-429. |
"A Simple, Low Cost Non-Contact Method of Measuring Bulk Minority Carrier Diffusion Length", by Verkuil, Electrochem. Soc. Abst. #193, pp. 507-509. |
"Contactless Alternatives to MOS Charge Measurements", by Verkuil, Electrochem. Soc. Abst, #525, pp. 1312-1315. |