Claims
- 1. Apparatus for forming a planarized layer of material on a substrate which includes contact holes having sidewalls that are formed within a surface of the substrate, comprising:
- a deposition chamber;
- a sputter target made of a constituent of said material,
- a platform for holding the substrate;
- a first power supply connected to the sputter target;
- a second Power supply connected to the platform;
- a control module programmed to carry out the following steps:
- depositing a first thickness of the material onto the surface of the substrate to form deposited material;
- reverse sputtering the deposited material so as to coat the sidewalls of the contact holes with the deposited material;
- after the first thickness of said material is deposited onto the surface of the substrate, depositing a second thickness of said material onto the surface of the substrate; and
- while depositing the second thickness of said material onto the surface of the substrate, causing the second power supply to bias the substrate to a positive voltage relative to around so that the substrate is bombarded by electrons thereby heating the substrate to enhance reflow of the material being deposited.
- 2. The apparatus of claim 1 wherein the control module is programmed to carry out the steps of depositing the first material and reverse sputtering concurrently.
- 3. The apparatus of claim 1 further comprising a collimation filter between said target and said platform.
- 4. The apparatus of claim 1 further comprising a heater thermally coupled to the platform so as to heat the substrate during processing.
- 5. The apparatus of claim 4 wherein the control module is programmed to cause the heater to heat the substrate while the substrate is being bombarded by electrons.
Parent Case Info
This is a divisional of U.S. application Ser. No. 08/867,276, filed Jun. 2, 1997, now U.S. Pat. No. 5,780,357, which is a continuation of Ser. No. 08/356,928, filed Dec. 14, 1994, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (4)
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Country |
0 297 502 |
Jan 1989 |
EPX |
63-076321 |
Apr 1988 |
JPX |
63-216972 |
Jan 1989 |
JPX |
6-302543 |
Oct 1994 |
JPX |
Non-Patent Literature Citations (4)
Entry |
Onuki et al., "Study on Step Coverage and (111) Preferred Orientation of Aluminum Film Deposited by a New Switching Bias Sputtering Method", Applied Phys. Letters, vol. 53, No. 11, 968-970 (Sep. 12, 1998). |
Homma, "Planarization Mechanism of RF-Biased Al Sputtering", Journal of the Electrochemical Society, vol. 140, No. 3, 855-860 (Mar. 1, 1993). |
"Planarizing Enhancement Mode `Sputtering . . . Plus` for Planarized Aluminum in Sypherlin", MTI Applications Note, vol. 1, No. 1, 1986. |
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Divisions (1)
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Number |
Date |
Country |
Parent |
867276 |
Jun 1997 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
356928 |
Dec 1994 |
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