The present disclosure generally relates to semiconductor devices. For example, several embodiments of the present disclosure relate to die attach adhesives including structures (e.g., nanospheres) that, when selectively stimulated, release additives that alter one or more characteristics of the die attach adhesives.
Die attach adhesives (e.g., die attach films, die attach pastes) are used to attach dies to substrates or other dies. For example, they are commonly employed when stacking chips in three-dimensional packaging. Die attach films are typically applied to dies at the wafer level before dicing. In other words, in comparison to die attach pastes, die attach films are typically preformed and attached to dies before those dies are singulated and attached to a substrate or another die. Die attach pastes, on the other hand, are typically dispensed on substrates shortly before singulated dies are attached to the substrates.
Many aspects of the present disclosure can be better understood with reference to the following drawings. The components in the drawings are not necessarily to scale. Instead, emphasis is placed on illustrating clearly the principles of the present disclosure. The drawings should not be taken to limit the disclosure to the specific embodiments depicted, but are for explanation and understanding only.
Specific details of several embodiments of die attach adhesives with tailorable characteristics using selectively releasable additives (and associated apparatuses, systems, and methods) are described below. For the sake of clarity and example, the present technology is primarily described below in the context of using die attach films to attach dies to substrates. Die attach adhesives configured in accordance with other embodiments of the present technology, however, can include die attach pastes or other adhesives. Additionally, or alternatively, the present technology can be used to attach dies to other dies and/or to attach dies to one or more other structures.
Specific details of several embodiments of the present technology are described herein with reference to
As used herein, the terms “vertical,” “lateral,” “upper,” “lower,” “top,” and “bottom” can refer to relative directions or positions of features in the semiconductor devices in view of the orientation shown in the Figures. For example, “bottom” can refer to a feature positioned closer to the bottom of a page than another feature. These terms, however, should be construed broadly to include semiconductor devices having other orientations, such as inverted or inclined orientations where top/bottom, over/under, above/below, up/down and left/right can be interchanged depending on the orientation.
Die attach adhesive is commonly employed to attach a die (e.g, a semiconductor die, a memory die) to a substrate or other die. Die attach films (DAFs) and die attach pastes are examples of die attach adhesives. DAFs are typically laminated on semiconductor wafers before the wafers are sawed into individual dies. DAF on a sawn die is then used to attach the die to a substrate or other die. Die attach pastes, on the other hand, are typically dispensed directly on a substrate or other die during the die attach process, and then a sawn die is placed on the dispensed die attach paste as part of the process of attaching the die to the substrate or other die. Although die attach pastes are most commonly used because of convenience (e.g., application timing and/or application flexibility), DAFs are regularly used because they can offer known die orientations (e.g., rotations, tilts), known bond line thicknesses, better bond line thickness uniformities, die attachments with little to no fillets, and/or die attachments with better die location accuracies.
During the die attach process, such as before, during or after die attachment and/or curing, it is not uncommon for issues (e.g., formation of voids, DAF delamination, non-uniform wetting) to arise. One current solution is to employ a die attach adhesive with specific properties (e.g., mechanical properties, viscoelastic properties, thermal history) that are expected to address (e.g., resolve, prevent) specific issues anticipated during the die attach process. As discussed above, however, a DAF is typically applied to dies at the wafer level (i) after the properties of the DAF are fixed based on the material composition or resin used to form the DAF and (ii) before a sawn die is attached to a substrate or other die. As such, if issues (unexpected or otherwise) arise during the die attach process that cannot be addressed by the fixed properties of the DAF, the die and DAF are scrapped, and another DAF with different properties must be employed. Employing another DAF with different properties commonly requires identification or development of a new DAF recipe or material that provides a desired set of properties that addresses issues observed during the die attach process. In other words, use of DAFs regularly results in assembly bottlenecks at the die attach stage. Similar problems can arise while using die attach pastes, such as during or after the curing stage.
To address these concerns, the present disclosure relates to die attach adhesives that include structures containing additives usable to alter or tailor one or more properties of the die attach adhesives. In one embodiment, a die attach adhesive (e.g., a DAF) includes a (i) primary material composition or resin and (ii) one or more structures (e.g., nanospheres) that each contain an additive. Examples of additives contained within one or more of the structures can include viscosity modifiers, crosslink enhancers, anti-electrostatic discharge (ESD) additives, or other suitable additives. The one or more structures can be selectively activated (e.g., using heat, light, ultrasound, or another suitable activation means) to selectively release the additive(s) such that the additive(s) are permitted to mix with the primary composition or resin and thereby alter one or more properties of the DAF.
In this manner, one or more properties of a die attach adhesive can be selectively tailored before, during, and/or after the die attachment and/or curing stages, such as to address one or more issues anticipated or observed before, during, and/or after the die attachment and/or curing stages. Thus, the present technology facilitates tuning one or more properties of a die attach adhesive to match specific desired functionality, facilitates large process and/or design windows, and permits different die attach adhesive responses using a single die attach adhesive.
For the sake of example, the die attach adhesive 104 is illustrated as a DAF. In other embodiments, the die attach adhesive 104 can be a die attach paste or other suitable adhesive. In embodiments in which the die attach adhesive 104 is a DAF, the die attach adhesive 104 can be laminated onto the die 102 at the wafer-stage before the wafer is sawn to produce the system 100 shown. In other embodiments, the die attach adhesive 104 can be applied to or otherwise interfaced with the die 102 at a different stage. For example, the die attach adhesive 104 can be applied to (e.g., laminated on) the die 102 after the die 102 is singulated. As another example, the die attach adhesive 104 can be dispensed on a substrate (e.g., on the structure 110 of
In the illustrated embodiment, the die attach adhesive 104 includes a first primary material composition or resin 106a. As discussed in greater detail below, the die attach adhesive 104 can include a first set of properties (e.g., material properties) that is based at least in part on the first primary material composition/resin 106a. For example, the first set of properties can include first mechanical properties, first viscoelastic properties, a first thermal history, first anti-electrostatic discharge (“anti-ESD”) properties, etc.
As shown in
The additives 109 can include solids and/or liquids that can be used to modify one or more properties of the die attach adhesive 104. More specifically, as discussed in greater detail below, each of the structures 108 can be selectively activated (e.g., stimulated) to rupture, break, or otherwise release the corresponding additive 109 contained within the structure 108. As the corresponding additive 109 is released, the additive 109 can mix with the first primary material composition/resin 106a of the die attach adhesive 104 and modify (e.g., alter, lessen, enhance) one or more properties of the die attach adhesive 104.
For example, the structure 108a shown in
As another example, the structure 108b shown in
As still another example, the structure 108c shown in
Other additives in addition to or in lieu of crosslink modifiers, viscosity modifiers, and/or anti-ESD additives can be included within one or more structures 108 of the die attach adhesive 104 in other embodiments of the present technology. Examples of other additives that can be releasably contained within one or more structures 108 of the die attach adhesive 104 include compressive strength modifiers, durability modifiers, flexural strength modifiers, thermal conductivity modifiers, thermal diffusivity modifiers, electrical resistivity modifiers, corrosion resistance modifiers, and/or one or more other suitable modifiers, such as metallic nanoparticles (e.g., formed of or including gold), metallic nanotubes (e.g., formed of or including copper or tungsten), or organic additives (e.g., dendrimers and/or long chain polymers such as polycaptolactone, polyvinylchloride, etc.).
The structures 108 shown in
As another example, one or more of the structures 108 can be formed of a material that, when exposed to light of a specific wavelength, ruptures, breaks, or otherwise allows the corresponding additive(s) 109 to exit the one or more structures 108. Continuing with this example, the additive(s) 109 contained within the one or more structures 108 can be selectively released by exposing the one or more structures 108 to the specific wavelength of light, such as before, during, or after the die attach and/or curing stages. Examples of materials that can be used to form one or more of such structures 108 include carriers formed of or including polypyrrole (IR) or upconverting nanoparticles (UCNP) that, when subjected or exposed to (e.g., specific wavelengths of) light, rupture to allow encased additives 109 to leach out and/or get activated to generate reactive species (e.g., that can further accelerate crosslinking or dominant reactive moieties of the die attach adhesive 104).
As still another example, one or more of the structures 108 can be formed of a material that, when exposed to (e.g., a specific frequency of) ultrasound energy, ruptures, breaks, or otherwise allows the corresponding additive(s) 109 to exit the one or more structures 108. Continuing with this example, the additive(s) 109 contained within the one or more structures 108 can be selectively released by subjecting the one or more structures 108 to (e.g., the specific frequency of) ultrasound energy, such as before, during, or after the die attach and/or curing stages. Examples of materials that can be used to form one or more of such structures 108 include mesoporus silica capped with thin layers of polymers (e.g., cellulose) that, when subjected to (e.g., specified frequencies of) ultrasound energy, rupture and release encased additives 109 through porous openings.
In the illustrated embodiment, each of the structures 108a-108 are formed of a different material. For example, the structure 108a can be formed of a first material that is configured to rupture, break, or otherwise release the additive 109a when the structure 108a is subjected to a specific temperature; the structure 108b can be formed of a second material that is configured to rupture, break, or otherwise release the additive 109b when the structure 108b is exposed to a specific wavelength of light; and/or the structure 108c can be formed of a third material that is configured to rupture, break, or otherwise release the additive 109c when the structure 108c is subjected to (e.g., a specific frequency of) ultrasound energy.
As another example, the structure 108a can be formed of a first material that is configured to release the additive 109a when the structure 108a is subjected to a first specific temperature; the structure 108b can be formed of a second material that is configured to release the additive 109b when the structure 108b is subjected to a second specific temperature; and/or the structure 108c can be formed of a third material that is configured to release the additive 109c when the structure 108c is subjected to a third specific temperature. The first temperature, the second temperature, and/or the third temperature can be different from one another.
As still another example, the structure 108a can be formed of a first material that is configured to release the additive 109a when the structure 108a is subjected to a first specific wavelength of light; the structure 108b can be formed of a second material that is configured to release the additive 109b when the structure 108b is subjected to a second specific wavelength of light; and/or the structure 108c can be formed of a third material that is configured to release the additive 109c when the structure 108c is subjected to a third specific wavelength of light. The first wavelength, the second wavelength, and/or the third wavelength can be different from one another.
As yet another example, the structure 108a can be formed of a first material that is configured to release the additive 109a when the structure 108a is subjected to a first specific frequency of ultrasound energy; the structure 108b can be formed of a second material that is configured to release the additive 109b when the structure 108b is subjected to a second specific frequency of ultrasound energy; and/or the structure 108c can be formed of a third material that is configured to release the additive 109c when the structure 108c is subjected to a third specific frequency of ultrasound energy. The first frequency, the second frequency, and/or the third frequency can be different from one another.
In other embodiments of the present technology, the structure 108a, the structure 108b, and/or the structure 108c can be formed of a same or similar material. For example, two or more of the structures 108a-108c can be formed of a same material that can be activated in response to a stimulus (e.g., a temperature, a wavelength of light, and/or a frequency of ultrasound energy). Continuing with this example, when the structures 108a-108c are exposed to the stimulus, the two or more of the structures 108a-108c can both be activated and rupture, break, or otherwise release the corresponding additives 109a, 109b, and/or 109c contained within the two or more of the structures 108a-108c.
Additionally, or alternatively, the structure 108a, the structure 108b, and/or the structure 108c can be formed of a same or similar material but include varying characteristics. For example, the structure 108a and the structure 108b can both be formed of a first material, but the structure 108a can have a first set of characteristics (e.g., wall thickness, size, internal volume, shape, density, etc.) that differs from a second set of characteristics (e.g., wall thickness, size, internal volume, shape, density, etc.) of the structure 108b. In some embodiments, the different characteristics can have different responses to a same stimulus. Thus, the structure 108a can rupture, break, or otherwise release the additive 109a in response to a first stimulus in a manner that differs from the manner in which the structure 108b ruptures, breaks, or otherwise releases the additive 109b in response to the first stimulus and/or a second stimulus.
In these and still other embodiments, other materials in addition to or in lieu of materials that can be selectively activated using temperature, light, and/or ultrasound can be used to form one or more structures 108 in other embodiments of the present technology. For example, one or more materials that can rupture, break, or otherwise release an additive in response to electrical, magnetic, vibratory, pressure, chemical, and/or other suitable stimuli, can be used to form one or more structures 108 in various embodiments of the present technology.
In this manner, one or more additives 109 can be selectively released from the corresponding structures 108 by selectively activating the corresponding structures 108 with one or more specific stimuli. As the one or more additives 109 are released from the corresponding structures 108, the one or more additives 109 can mix with the primary material composition/resin 106 of the die attach adhesive 104 to alter one or more properties of the die attach adhesive. In other words, one or more characteristics of the die attach adhesive 104 can be selectively altered. Thus, one or more properties of a die attach adhesive 104 configured in accordance with the present technology can be selectively tailored (e.g., to address one or more observed or anticipated issues) before, during, or after the die attach and/or curing stages.
Although shown with a specific number of structures 108 and additives 109 in
The method 230 begins at block 231 by identifying one or more desired changes to one or more properties of a die attach adhesive. The die attach adhesive can be usable to attach a die to a substrate, another die, or another structure. In these and other embodiments, the die attach adhesive can be or include a DAF or a die attach paste.
Identifying the one or more desired changes can include observing or anticipating one or more issues during a die attach stage and/or a curing stage. The one or more desired changes can correspond to changes in the one or more properties that are expected to address the one or more observed or anticipated issues. Additionally, or alternative, identifying the one or more desired changes can include identifying one or more desired properties of the die attach adhesive before, during, and/or after the die attach stage and/or the curing stage.
At block 232, the method 230 continues by activating one or more structures included in the die attach adhesive. The one or more structures can contain one or more additives that correspond to the one or more desired changes to the one or more properties of the die attach adhesive. For example, the one or more structures can contain a crosslink modifier to alter one or more mechanical properties of the die attach adhesive, a viscosity modifier to alter one or more viscoelastic properties of the die attach adhesive, and/or an anti-ESD additive to alter one or more anti-ESD properties of the die attach adhesive.
Activating the one or more structures can include subjecting the one or more structures to one or more stimuli that causes the one or more structures to rupture, break, or otherwise release the one or more additives contained within the one or more structures. For example, activating the one or more structures can include applying the one or more stimuli to the one or more structures. The one or more stimuli can include a specific temperature or specific range of temperatures, light, a specific wavelength or range of wavelengths of light, ultrasound energy, a specific frequency or range of frequencies of ultrasound energy, and/or other suitable stimuli. Additionally, or alternatively, activating the one or more structures can include releasing or otherwise facilitating the one or more additives contained within the one or more structures to mix with a primary material composition or resin of the die attach adhesive (e.g., such that the one or more properties of the die attach adhesive are altered in accordance with the one or more desired changes from block 231).
Although the steps of the method 230 are discussed and illustrated in a particular order, the method 230 is not so limited. In other embodiments, the method 230 can be performed in a different order. In these and other embodiments, any of the steps of the method 230 can be performed before, during, and/or after any of the other steps of the method 230. Furthermore, the method 230 can be altered and still remain within these and other embodiments of the present technology. For example, one or more steps (e.g., block 231) of the method 230 can be omitted. As another example, one or more steps (e.g., block 231 and/or block 232) can be repeated in some embodiments.
Any one of the semiconductor devices described above with reference to
The above detailed descriptions of embodiments of the technology are not intended to be exhaustive or to limit the technology to the precise form disclosed above. Although specific embodiments of, and examples for, the technology are described above for illustrative purposes, various equivalent modifications are possible within the scope of the technology as those skilled in the relevant art will recognize. For example, although steps are presented in a given order above, alternative embodiments may perform steps in a different order. Furthermore, the various embodiments described herein may also be combined to provide further embodiments.
From the foregoing, it will be appreciated that specific embodiments of the technology have been described herein for purposes of illustration, but well-known structures and functions have not been shown or described in detail to avoid unnecessarily obscuring the description of the embodiments of the technology. To the extent any material incorporated herein by reference conflicts with the present disclosure, the present disclosure controls. Where context permits, singular or plural terms may also include the plural or singular term, respectively. In addition, unless the word “or” is expressly limited to mean only a single item exclusive from the other items in reference to a list of two or more items, then the use of “or” in such a list is to be interpreted as including (a) any single item in the list, (b) all of the items in the list, or (c) any combination of the items in the list. Furthermore, as used herein, the phrase “and/or” as in “A and/or B” refers to A alone, B alone, and both A and B. Additionally, the terms “comprising,” “including,” “having,” and “with” are used throughout to mean including at least the recited feature(s) such that any greater number of the same features and/or additional types of other features are not precluded. Moreover, as used herein, the phrases “based on,” “depends on,” “as a result of,” and “in response to” shall not be construed as a reference to a closed set of conditions. For example, an exemplary step that is described as “based on condition A” may be based on both condition A and condition B without departing from the scope of the present disclosure. In other words, as used herein, the phrase “based on” shall be construed in the same manner as the phrase “based at least in part on” or the phrase “based at least partially on.” Also, the terms “connect” and “couple” are used interchangeably herein and refer to both direct and indirect connections or couplings. For example, where the context permits, element A “connected” or “coupled” to element B can refer (i) to A directly “connected” or directly “coupled” to B and/or (ii) to A indirectly “connected” or indirectly “coupled” to B.
From the foregoing, it will also be appreciated that various modifications may be made without deviating from the disclosure or the technology. For example, one of ordinary skill in the art will understand that various components of the technology can be further divided into subcomponents, or that various components and functions of the technology may be combined and integrated. In addition, certain aspects of the technology described in the context of particular embodiments may also be combined or eliminated in other embodiments. Furthermore, although advantages associated with certain embodiments of the technology have been described in the context of those embodiments, other embodiments may also exhibit such advantages, and not all embodiments need necessarily exhibit such advantages to fall within the scope of the technology. Accordingly, the disclosure and associated technology can encompass other embodiments not expressly shown or described herein.
The present application claims priority to U.S. Provisional Patent Application No. 63/597,583, filed Nov. 9, 2023, the disclosure of which is incorporated herein by reference in its entirety.
Number | Date | Country | |
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63597583 | Nov 2023 | US |