The disclosure relates to a die bonding process, and more particularly to a die bonding process for manufacturing a semiconductor device. The disclosure also relates to a semiconductor device and a semiconductor light-emitting device.
With continuous mining of performance of semiconductor components, the manufacture of the semiconductor components has become one of the most valued fields recently. In the manufacturing process for the semiconductor components, a gold (Au) material is a preferred material for a top layer of an electrode structure of a semiconductor chip due to its soft texture, stable property, and good current spreading effect, and is commonly used in the art. However, the weak interaction of Au—Au bonding may lead to a cyclic high nuclear cluster compound layer being adsorbed on a surface of the electrode structure. Therefore, when the semiconductor chip is present in an environment containing organic materials, the gold material contained in the semiconductor chip may be a medium that subjects epoxy silane-based organic materials to polycondensation and curing on a surface of the gold material, resulting in pollution of a pad electrode, such that abnormalities in wire bonding, inter-metallic joining, and the like may occur during a die bonding process for the semiconductor ship. Therefore, the qualities of the semiconductor components manufactured thereby may be adversely affected.
Referring to
An object of the disclosure is to use an adsorbent material, which has a greater adsorption capability for suspended pollutants (for example, aerosol-type pollutants and dust-type pollutants) than an adsorption capability for the suspended pollutants of electrodes, in a die bonding process for manufacturing a semiconductor device so as to overcome the aforesaid shortcomings of the prior art.
Another object of the discourse is to provide a semiconductor light-emitting device which includes an adsorbent material having a greater adsorption capability for suspended pollutants (for example, aerosol-type pollutants and dust-type pollutants) than an adsorption capability for the suspended pollutants of electrodes, so as to overcome the aforesaid shortcomings of the prior art
According to a first aspect of the disclosure, there is provided a die bonding process for manufacturing a semiconductor device, which includes the steps of:
a) preparing a semiconductor structure and a substrate;
b) mounting an electrode structure on the semiconductor structure to form a semiconductor component;
c) forming a protective component at a die bonding region which is located on at least one selected from the group consisting of the semiconductor structure and the substrate; and
d) mounting the semiconductor component on the substrate via a die bonding technique to obtain the semiconductor device,
wherein the protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure.
According to a second aspect of the disclosure, there is provided a semiconductor device which includes a substrate, a semiconductor component, a die bond paste, and a protective component. The semiconductor component is formed on the substrate, and includes a semiconductor structure and an electrode structure formed on the semiconductor structure. The die bond paste is sandwiched between the substrate and the semiconductor component so as to bond the semiconductor component to the substrate. The protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant including a pollutant material produced from the die bond paste and suspended particles than an adsorption capability for the suspended pollutant of the electrode structure.
According to a third aspect of the disclosure, there is provided a semiconductor light-emitting device which includes a semiconductor component and an adsorbent material.
The semiconductor component includes a laminate structure and an electrode structure.
The laminate structure includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an electrode structure. The light-emitting layer is formed on the first conductive semiconductor layer. The second conductive semiconductor layer is formed on the light-emitting layer and has a conductivity type different from that of the first conductive semiconductor layer.
The electrode structure is formed on at least one selected from the group consisting of the first conductive semiconductor layer and the second conductive semiconductor layer. The laminate structure has a non-electrode region which is located on at least one selected from the group consisting of the first conductive semiconductor layer and the second conductive semiconductor layer and which is not provided with the electrode structure thereon.
The adsorbent material is disposed at the non-electrode region and has a greater adsorption capability for a pollutant than an adsorption capability for the pollutant of the electrode structure so as to inhibit the electrode structure from adsorbing the pollutant.
Other features and advantages of the disclosure will become apparent in the following detailed description of the embodiments with reference to the accompanying drawings, of which:
Before the disclosure is described in greater detail, it should be noted that some components are exaggeratedly shown in the figures for the purpose of convenient illustration and are not in scale.
Referring to
a) preparing a semiconductor structure 113 and a substrate 400 (for example, a packaging substrate);
b) mounting electrode structures 111, 112 on the semiconductor structure 113 to form a semiconductor component 100;
c) forming a protective component 200 at a die bonding region which is located on at least one selected from the group consisting of the semiconductor structure 113 and the substrate 400; and
d) mounting the semiconductor component 100 on the substrate 400 via a die bonding technique to obtain the semiconductor device.
The protective component 200 is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure 111, 112.
Referring specifically to
In certain embodiments, in step d) of the die bonding process according to the disclosure, the die bonding technique is implemented by fixing the semiconductor component 100 to the substrate 400 using a die bond paste 300 and heating to cure the die bond paste 300. In certain embodiments, the die bond paste 300 is heated at a temperature ranging from 100° C. to 200° C. so as to remove solvent contained in the die bond paste 300 and to cure the die bond paste 300.
In certain embodiments, the suspended pollutant includes a pollutant material produced from the die bond paste 300 and suspended particles (not shown) present around the semiconductor device. Specifically, the pollutant material is usually produced from the die bond paste 300 during heating of the die bond paste 300, and is present in an aerosol form.
In certain embodiments (for example, the embodiments shown in
In certain embodiments, in step c) of the die bonding process according to the disclosure, the protective component 200 is formed to permit the protective component 200 to be spaced apart from the electrode structures 111, 112 by a distance of less than 300 mm. When the distance between the protective component 200 and the electrode structures 111, 112 is more than 300 mm, the effect of inhibiting the electrode structures 111, 112 from adsorbing the pollutant may be reduced.
In certain embodiments, in step b) of the die bonding process according to the disclosure, the electrode structures 111, 112 are made of a conductive material independently selected from the group consisting of gold, aluminum, silver, titanium, and combinations thereof.
In certain embodiments, in step c) of the die bonding process according to the disclosure, the protective component 200 may be selected from the group consisting of an activated carbon, a porous ceramic, an adsorptive organic compound, a fiber material, a nanostructured insulation oxide, and combinations thereof.
In certain embodiments, in step a) of the die bonding process according to the disclosure, the semiconductor component 100 may be selected from the group consisting of a light-emitting diode, a solar cell, an integrated circuit, and combinations thereof.
Referring again to
The semiconductor component 100 is formed on the substrate 400, and includes the semiconductor structure 113 and the electrode structures 111, 112 formed on the semiconductor structure 113. Specifically, in the first embodiment, the electrode structures 111, 112 are specified as a first electrode structure 111 and a second electrode structure 112, respectively, which are disposed on an upper surface portion 114 and a lower surface portion 115 of the semiconductor structure 113, respectively.
As described above, the semiconductor component 100 may be selected from the group consisting of a light-emitting diode, a solar cell, an integrated circuit, and combinations thereof.
The die bond paste 300 is sandwiched between the substrate 400 and the semiconductor component 100 so as to bond the semiconductor component 100 to the substrate 400.
The protective component 200 is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant including a pollutant material produced from the die bond paste 300 and suspended particles than an adsorption capability for the suspended pollutant of the electrode structures 111, 112.
In certain embodiments, the protective component 200 is formed on at least one selected from the group consisting of the substrate 400 and the semiconductor structure 113. Specifically, in the first embodiment, the protective component 200 is formed on the substrate 400. As described above, the protective component 200 may be selected from the group consisting of an activated carbon, a porous ceramic, an adsorptive organic compound, a fiber material, a nanostructured insulation oxide, and combinations thereof.
In certain embodiments, the semiconductor structure 113 is a light-emitting diode having a light-emitting surface, and the protective component 200 is not formed on the light-emitting surface of the light-emitting diode.
Referring to
In the second embodiment, the semiconductor structure 113 is a light-emitting diode having a face-up structure, which includes a backing layer 120, an n-type layer 150 disposed on the backing layer 120, a light-emitting layer 140 disposed on the n-type layer 150, and a p-type epitaxial layer 130 disposed on the light-emitting layer 140.
The first and second electrode structures 111, 112 are disposed on a top surface of the p-type epitaxial layer 130 and a top surface of the n-type layer 150 not covered by the light-emitting layer 140, respectively.
The semiconductor structure 113 has a first side wall portion 116 proximate to the second electrode structure 112 and a second side wall portion 117 proximate to the first electrode structure 111. The protective component 200 is formed on first side wall portion 116. The porous ceramic, such as a silicate ceramic may be used as the protective component 200 to prevent abnormality (for example, short circuit) of the p-type epitaxial layer 130 and to adsorb the pollutant during the die bonding process.
Referring to
Referring to
Referring to
The semiconductor component 100 includes a semiconductor structure 110 and an electrode structure 5000.
The semiconductor structure 110 may be a light-emitting diode, a laser diode, and includes a laminate structure 2000, a current blocking layer 3000, a current spreading layer 4000, and an insulating protective layer 6000.
The laminate structure 2000 includes a first conductive semiconductor layer 2001 (such as an n-type layer, for example, a n-GaN layer) disposed on the substrate 1000, a light-emitting layer 2002 (for example, a multiple quantum well (MQW) layer) formed on the first conductive semiconductor layer 2001, and a second conductive semiconductor layer 2003 (such as a p-type layer, for example, a p-GaN layer), which is formed on the light-emitting layer 2002 and which has a conductivity type different from that of the first conductive semiconductor layer 2001. Alternatively, if the p-type layer is used as the first conductive semiconductor layer 2001, then the n-type layer is used as the second conductive semiconductor layer 2003.
The current blocking layer 3000 is disposed on the second conductive semiconductor layer 2003.
The current spreading layer 4000 can be formed on at least one selected from the group consisting of the first conductive semiconductor layer 2001 and the second conductive semiconductor layer 2003. Specifically, in the fifth embodiment, the current spreading layer 4000 is disposed on the current blocking layer 3000 and the second conductive semiconductor layer 2003. The current spreading layer 4000 can be made of a metal oxide material selected from the group consisting of indium tin oxide (ITO), zinc oxide (ZnO), cadmium tin oxide (CTO), indium oxide (InO), indium-doped zinc oxide (In-doped ZnO), aluminum-doped zinc oxide (Al-doped ZnO), gallium-doped zinc oxide (Ga-doped ZnO), and combinations thereof.
The insulating protective layer 6000 may be formed on at least one selected from the group consisting of the first conductive semiconductor layer 2001 and the second conductive semiconductor layer 2003.
The electrode structure 5000 (for example, a pad electrode) is formed on at least one selected from the group consisting of the first conductive semiconductor layer 2001 and the second conductive semiconductor layer 2003. Specifically, in the fifth embodiment, the electrode structure 5000 is formed on an exposed portion of the first conductive semiconductor layer 2001 and/or on the current spreading layer 4000. In addition, the laminate structure 2000 has a non-electrode region which is located on at least one selected from the group consisting of the first conductive semiconductor layer 2001 and the second conductive semiconductor layer 2003 and which is not provided with the electrode structure 5000 thereon.
The adsorbent material 7000 is disposed at the non-electrode region and has a greater adsorption capability for a pollutant 8000 than an adsorption capability for the pollutant 8000 of the electrode structure 5000, so as to inhibit the electrode structure 5000 from adsorbing the pollutant 8000. Specifically, in the fifth embodiment, the adsorbent material 7000 is disposed on the insulating protective layer 6000. Alternatively, the adsorbent material 7000 may be disposed below the insulating protective layer 6000. In the fifth embodiment, the insulating protective layer 6000 is formed for protecting the semiconductor component 100 exclusive of the electrode structure 5000, which is exposed from the insulating protective layer 6000. The adsorbent material 7000 is then disposed on the insulating protective layer 6000 (i.e., the non-electrode region) by a technique such as spin-coating, deposition, or a combination thereof. Examples of deposition include physical vapor deposition (for example, evaporation deposition or sputter deposition), chemical vapor deposition, electroplating, and chemical plating deposition, but are not limited thereto. The insulating protective layer 6000 may be made of a metal oxide material selected from the group consisting of silicon oxide (SiO2), silicon nitride (Si3N4), aluminum oxide, (Al2O3), titanium oxide (TiO2) and combinations thereof. Specifically, the protective layer 6000 is made of silicon oxide (SiO2).
In certain embodiments, the adsorbent material 7000 is formed with a thickness ranging from 1 nm to 100 nm, and is configured as a continuous structure or a patterned structure. In the fifth embodiment, the adsorbent material 7000 is configured as the patterned structure.
In certain embodiments, the adsorbent material 7000 is selected from the group consisting of a metal material, a nano-oxide material, a graphene, an activated carbon, and combinations thereof. In the fifth embodiment, the metal material is used as adsorbent material 7000. Examples of the metal material include hydrogen storage metals or alloys containing at least one selected from the group consisting of Pd, LaNi5, NdNi5, CaNi5, TiNi5, LaAl5, LaFe5, LaCr5, LaCu5, LaSi5, LaSn5, FeTi, MnTi, CrTi, TiCu, MgZn2, MgZn2, NiMg2, ZrCr2, ZrMn2, and combinations thereof.
As described above, since the adsorbent material 7000 has a greater adsorption capability for the pollutant 8000 than an adsorption capability for the pollutant 8000 of the electrode structure 5000, the pollutant 8000 (such as the pollutant present in the primary pollution and the low reactive molecule) can be adsorbed effectively on the adsorbent material 7000, rather than on the electrode structure 5000. Therefore, the aforesaid shortcomings of the prior art can be overcome and the reliability of the semiconductor device thus manufactured can be enhanced.
Referring to
Referring to
In the description above, for the purposes of explanation, numerous specific details have been set forth in order to provide a thorough understanding of the embodiments. It will be apparent, however, to one skilled in the art, that one or more other embodiments may be practiced without some of these specific details. It should also be appreciated that reference throughout this specification to “one embodiment,” “an embodiment,” an embodiment with an indication of an ordinal number and so forth means that a particular feature, structure, or characteristic may be included in the practice of the disclosure. It should be further appreciated that in the description, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of various inventive aspects, and that one or more features or specific details from one embodiment may be practiced together with one or more features or specific details from another embodiment, where appropriate, in the practice of the disclosure.
While the disclosure has been described in connection with what are considered the exemplary embodiments, it is understood that this disclosure is not limited to the disclosed embodiments but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.
Number | Date | Country | Kind |
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201710822522.3 | Sep 2017 | CN | national |
201710823265.5 | Sep 2017 | CN | national |
This application is a bypass continuation-in-part application of International Application No. PCT/CN2018/085130 filed on Apr. 28, 2018, which claims priority of Chinese Patent Application Nos. 201710822522.3 and 201710823265.5, both filed on Sep. 13, 2017. The entire content of each of the international and Chinese patent applications is incorporated herein by reference.
Number | Date | Country | |
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Parent | PCT/CN2018/085130 | Apr 2018 | US |
Child | 16816108 | US |