Barouch, E., et al., “Optimask: An OPC Algorithm for Chrome and Phase-Shift Mask Design”, 2/22-24/95, SPIE vol. 2440, pp. 192-206. |
Brunner, T., et al., “Approximate Models for Resist Processing Effects”, 198/SPIE vol. 2726, Optical Microlithography IX, Mar. 13-15, 1996, pp. 198-209. |
Brunner, T, “Rim Phase-Shift Mask Combined with Off-Axis Illumination: A Path to 0.5λ/Numerical Aperture Geometries”, Optical Engineering, Oct. 1993, vol. 32 No. 10, pp. 2337-2343. |
Casey, J. Jr., et al., “Chemically Enhanced FIB Repair of Opaque Defects on Molybdenum Silicide Photomasks”, Wednesday Poster Session Paper 3236-58, Photomask Technology and Management Technical Program, (1997), SPIE vol. 3236, pp. 487-497. |
Chang, K., et al., “Accurate Modeling of Deep Submicron Interconnect Technology”, TMA Times, Fall 1997 vol. IX, No. 3. |
Cobb, et al., “Fast Sparse Aerial Image Calculation for OPC”, SPIE vol. 2621, pp. 534-544. |
Gans, F., et al., “Printability and Repair Techniques for DUV Photomasks”, Photomask Technology and Management Technical Program, Session 3 Paper, (1998), pp. 136-141. |
Ham, Y. M., et al., “Dependence of Defects in Optical Lithography”, Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4137-4142. |
Henke, W., et al., “A Study of Reticle Defects Imaged Into Three-Dimensional Developed Profiles of Positive Photresist Using the Solid Lithography Simulator”, Microelectronic Engineering 14 (1991) 283-297. |
Ibsen, K., et al., “Clear Field Reticle Defect Disposition for Advanced Sub-Half Micron Lithography”, (1997), Photomask Technology and Management Technical Program, Session 3 Paper 3236-13. |
Ishiwata, N., et al., “Novel Alternating Phase Shift Mask with Improved Phase Accuracy”, Photomask Technology and Management Technical Program, Session 7 Paper 3236-28, SPIE vol. 3236. |
Jinbo, H., et al., “0.2μm OR Less i-Line Lithography by Phase-Shifting-Mask Technology”, Semiconductor Technology Lab., Oki Electric Industry Co., Ltd., CH2865-4/90/0000-825, pp. 33.3.1-33.3.4. |
Jinbo, H., et al., “Application of Blind Method to Phase-Shifting Lithography”, 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 112-113. |
Jinbo, H., “Improvement of Phase-Shifter Edge Line Mask Method”, Japanese Journal of Applied Physics, vol. 30, No. 11B, Nov., 1991, pp. 2998-3003. |
Karklin, Linard, “A Comprehensive Simulation Study of the Photomask Defects Printability”, SPIE vol. 2621, pp. 490-504. |
Kimura, T., et al., “Subhalf-Micron Gate GaAs Mesfet Process Using Phase-Shifting-Mask Technology”, GaAs IC Symposium, 1991, pp. 281-284. |
Lithas: Optical Proximity Correction Software. |
MicroUnity: OPC Technology & Product Description, pp. 1-5. |
Morimoto, H., et al., “Next Generation Mask Strategy-Technologies are Ready for Mass Production of 256MDRAM?”, (Panel discussion of PMJ'97 on Apr. 18, 1997), SPIE vol. 3236 pp. 188-189. |
Nistler, J., et al., “Large Area Optical Design Rule Checker for Logic PSM Application”, SPIE vol. 2254 Photomask and X-Ray Mask Technology (1994), pp. 78-92. |
Nistler, J., et al., “Phase Shift Mask Defect Printability Analysis”, Eytan Barouch and Use Hollerbach, Princeton University, Princeton, NJ, pp. 11-27. |
Ohtsuka, H., et al., “Phase Defect Repair Method for Alternating Phase Shift Masks Conjugate Twin-Shifter Method”, Jpn. J. Appl. Phys. vol. 31, Part 1, No. 12B, (1992) pp. 4143-4149. |
Park, C., et al., “An Automatic Gate CD Control for a Full Chip Scale SRAM Device”, CAE, Process Development Team, Semiconductor R&D Center, Samsung Electronics Co, LTD, SPIE vol. 3236, (1997), pp. 350-356. |
Pati, Y.C., et al., “Exploiting Structure in Fast Aerial Image Computation for Integrated Circuit Patterns”, IEEE Transactions on Semiconductor Manufacturing, vol. 10, No. 1, Feb. 1997, pp. 62-74. |
Pati, Y.C., et al., “Phase-Shifting Masks for Microlithography: Automated Design and Mask Requirements,” J. Opt. Soc. Am. A/vol. 11, No. 9/Sep. 1994, pp. 2438-2452. |
“Proxima System,” Precim Company, Portland, Oregon (2 pages). |
“Proxima Wafer Proximity Correction System”, Precim Company, Portland, Oregon (2 pages). |
Reiger, M., et al., “Customizing Proximity Correction for Process-Specific Objectives”, Precim Company, (1996), SPIE vol. 2726, pp. 651-659. |
Rieger, M., et al., “Mask Fabrication Rules for Proximity-Corrected Patterns”, Precim Company, Portland, Oregon. |
Rieger, M., et al., “Proxima System Theory of Operation”, Aug. 23, 1993, pp. 1-20. |
Rieger, M., et al., “V-Domain Definition”, Sep. 8, 1993, pp. 1-7. |
Rieger, M., et al., “Using Behavior Modelling for Proximity Correction”, Precim Company, SPIE 1994. |
Roman, B., et al., “Implications of Device Processing on Photomask CD Requirements”, (Motorola Advanced Products Research and Development Laboratory, Austin, TX 78762), Photomask Technology and Management Technical Program, Session 8, Paper 3236-31, p. 51. |
Spence, C., et al., “Automated Determination of CAD Layout Failures Through Focus: Experiment and Simulation”, SPIE vol. 2197, (1994), pp. 302-313. |
Spence, C., et al., “Detection of 60° Phase Defects on Alternating PSMs”, Advanced Micro Devices, KLA-Tencor DuPoint TRC. |
Stirninan, J., et al., “Fast Proximity Correction with Zone Sampling”, SPIE vol. 2197 (1994), pp. 294-301. |
Stirniman, J., et al., “Optimizing Proximity Correction for Wafer Fabrication Processes”, SPIE vol. 2322, Photomask Technology and Management (1994), pp. 239-246. |
Stirniman, J., et al., “Spatial Filter Models to Describe IC Lighographic Behavior”, Precim Corporation, Portland, Oregon. |
Stirniman, J., et al., “Wafer Proximity Correction and Its Impact on Mask-Making”, Bacus News, Photomask, Jan. 1994, vol. 10, Issue 1, p. 1, 3-7, 10-12. |
Sugawara, M., et al., “Defect Printability Study of Attenuated Phase-Shifting Masks for Specifying Inspection Sensititivy”, Semiconductor Company, Sony Corporation, Kanagawa, Japan. |
Trans Vector Technologies, Inc: “Now Better Quality Photomasks”, OPRX, 4 pages. |
Vacca, A., et al., “100nm Defect Detection Using a Dynamically Programmable Image Processing Algorithm”, Photomask Technology and Management Technical Program, Sesion 6 Paper 3236-24. |
Vacca, A., et al., “100nm Defect Detection Using an Existing Image Acquisition System”, (1998), SPIE vol. 3236, pp. 208-214. |
Watanabe, H., et al., “Detection and Printability of Shifter Defects in Phase-Shifting Masks II. Defocus Characteristics”, Jpn. J. Appl. Phys. vol. 31 (1992) Pt. 1, No. 12B, pp. 4155-4160. |
Wiley, J., et al., “Device Yield and Reliability by Specification of Mask Defects”, SolidState Technology, Lithography. |
Wiley, J., et al., “The Effect of Off-Axis Illumination on the Printability of Opaque and Transparent Reticle Defects”, SPIE vol. 2512, (1995), pp. 432-440. |
Wiley, J., “Phase Shift Mask Pattern Accuracy Requirements and Inspection Technology”, SPIE vol. 1464 Integrated Circuit Metrology, Inspection and Process Control V (1991), pp. 346-355. |
Yen, A., et al., “Characterization and Correction of Optical Proximity Effects in Deep-Ultraviolet Lithography Using Behavior Modeling”, J. Vac. Sci. Technol. B 14(6), Nov./Dec. 1996, pp. 4175-4178. |
Ackmann, P. et al., “Phase Shifting And Optical Proximity Corrections To Improve CD Control On Logic Devices In Manufacturing For Sub 0.35 μm I-Line”, Advance Micro Devices (8 pages). |
Asai, N. et al., “Proposal For The Coma Aberration Dependent Overlay Error Compensation Technology”, Jpn. J. Appl. Phys., vol. 37, pp. 6718-6722 (1998). |
Chen, J.F. et al., “Full-Chip Optical Proximity Correction With Depth Of focus Enhancement”, Microlithography World (1997). |
Chen, J.F. et al., “Optical Proximity Correction For Intermediate-Pitch Features Using Sub-Resolution Scattering Bars”, MicruUnity Systems Engineering, Inc., Sunnyvale, California, pp. 1-16. |
Chen, J.F., et al., “Practical Method For Full-Chip Optical Proximity Correction”, MicroUnity Systems Engineering, Inc., Sunnyvale, California (14 pages). |
Garofalo, J. et al., “Automated Layout Of Mask Assist-Features For Realizing 0.5k1 ASIC Lithography”, SPIE, vol. 2440, pp. 302-312 (1995). |
Garofalo, J. et al., “Automatic Proximity Correction For 0.35 μm I-Line Photolithography”, IEEE, pp. 92-94 (1994). |
Garofalo, J. et al., “Mask Assisted Off-Axis Illumination Technique For Random Logic”, J. Vac. Sci. Technol. B, vol. 11, No. 6, pp. 2651-2658, Nov./Dec. 1993. |
Gotoh, Y. et al., “Pattern Dependent Alignment Technique For Mix-And-Match Electron-Beam Lithography With Optical Lithography”, J. Vac. Sci. Technol. B, vol. 16, No. 6, pp. 3202-3205, Nov./Dec. 1998. |
Harafuji, K. et al., “A Novel Hierarchical Approach For Proximity Effect Correction In Electron Beam Lithography”, IEEE, vol. 12, No. 10, pp. 1508-1514, Oct. 1993. |
Lin, B.J., “Methods To Print Optical Images At Low-k1 Factors”, SPIE, Optical/Laser Microlithography III, vol. 1264, pp. 2-13 (1990). |
Pierrat, C. et al., “A Rule-Based Approach To E-Beam And Process-Induced Proximity Effect Correction For Phase-Shifting Mask Fabrication”, SPIE, vol. 2194, pp. 298-309 (1994). |
Precim, “Proxima System”, Precim Company, Portland, Oregon (2 pages). |
Saleh, B. et al., “Reduction Of Errors Of Microphotographic Reproductions By Optimal Corrections Of Original Masks”, Optical Engineering, Vo. 20, No. 5, pp. 781-784, Sep./Oct. 1981. |
Spence, C. et al., “Integration Of Optical Proximity Correction Strategies In Strong Phase Shifters Design For Poly-Gate Layers”, Bacus News, vol. 15, Issue 12, pp. 1, 4-13, Dec. 1999. |
Choi, Y., et al., “Optical Proximity Correction on Attenuated Phase Shifting Photo Mask for Dense Contact Array”, LG Semicon Company (11 pages). |
Lucas, K., et al., “Model Based OPC for 1st Generation 193nm Lithography”, Motorola Inc., IDT assignee to IMEC (12 pages). |
Stirniman, J., et al., “Quantifying Proximity and Related Effects in Advanced Wafer Processes”, Precim Company, Hewlett Packard Labs (9 pages). |
Sugawara, M., et al., “Practical Evaluation of Optical Proximity Effect Correction by EDM Methodology”, Sony Corporation (11 pages). |
Granik, Y., et al., “MEEF as a Matrix”, Mentor Graphics Corporation (11 pages). |
Kang, D., et al., “Effects of Mask Bias on t he Mask Error Enhancement Factor (MEEF) of Contact Holes” (11 pages). |
Matsuura, S., et al., “Reduction of Mask Error Enhancement Factor (MEEF) by the Optimum Exposure Dose Self-Adjustment Mask”, NEC Corporation (12 pages). |
Fu, C.C., et al., “Enhancement of Lithographic Patterns by Using Serif Features”, IEEE, Transactions On Electron Devices, vol. 38, No. 12, pp. 2599-2603, Dec. 1991. |
Henderson, R., et al., “Optical Proximity Effect Correction: An Emerging Technology”, Microlithography World, pp. 6-12 (1994). |
Dolainsky, C., et al., “Application of a Simple Resist Model for Fast Optical Proximity Correction”, SPIE, vol. 3051, pp. 774-780 (1997). |
Chen, J., et al., “Full-Chip Optical Proximity Correction with Depth of Focus Enhancement”, Microlithography World ,(5 pages) (1997). |
Wong, A., et al., “Lithographic Effects of Mask Critical Dimension Error”, SPIE, vol. 3334, pp. 106-115 (1998). |
Balasinski, A., et al., “Comparison of Mask Writing Tools and Mask Simulations for 0.16um Devices”, IEEE, SEMI Advanced Semiconductor Manufacturing Conference, pp. 372-377 (1999). |
Chuang, H., et al., “Practical Applications of 2-D Optical Proximity Corrections for Enhanced Performance of 0.25μm Random Logic Devices”, IEEE, pp. 18.7.1-18.7.4, Dec. 1997. |
Cobb, N., et al., “Fast, Low-Complexity Mask Design”, SPIE, vol. 2440, pp. 313-327, Feb. 22-24, 1995. |
Cobb, N., et al., “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model”, SPIE, vol. 3051, pp. 458-468, Mar. 12-14, 1997. |
Cobb, N., “Fast Optical and Process Proximity Correction Algorithms for Integrated Circuit Manufacturing”, Dissertation, University of California at Berkeley, UMI Microform 9902038 (139 pages). |
Toublan, O., et al., “Phase Aware Proximity Correction for Advanced Masks”, SPIE, vol. 4000, pp. 160-170, Mar. 1-3, 2000. |