The present invention relates to a multi stage lithographic apparatus and a method for manufacturing a device with the multi stage lithographic apparatus.
A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
There is an ongoing development in improving current lithographic apparatus. An aspect herewith is to increase the throughput (throughput is related to the number of substrates that can be processed in a certain time by a lithographic apparatus). For example, Dual Stage Lithographic apparatus generally have a larger throughput than Single stage apparatus since a substrate on a first substrate stage may be measured in a metrology station while another substrate on a second substrate stage is exposed in an exposure station on the basis of data measured previously in the metrology station. Another aspect is to improve the capability of lithographic apparatus to transfer patterns with smaller structures (but with a given quality) on substrates. For example, an Immersion lithographic apparatus is capable of transferring patterns with smaller structures in comparison with non-immersion lithographic apparatus (see for example EP 1486827, incorporated herein by reference).
In U.S. Pat. No. 5,969,441 (incorporated herein by reference) a Dual Stage lithographic apparatus is described that is provided with “H-drives” (see for example
In U.S. Pat. No. 6,341,007 (incorporated herein by reference) (see in particular
It is desirable to at least partially alleviate one of the mentioned disadvantages. In particular it is an aspect of the invention to provide a lithographic apparatus with a relatively high throughput and the capability of transferring patterns with relatively small structures on substrates.
In order to meet the desire the invention proposes a lithographic apparatus comprising:
a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam;
a measuring system for measuring characteristics of substrates in a metrology station of the apparatus;
a projection system configured to project the patterned radiation beam onto a substrate in an exposure station of the apparatus;
a liquid confinement system for confining liquid between a final element of the projection system and the substrate;
a positioning system and at least two substrate stages constructed to hold substrates, wherein the positioning system is constructed for moving the stages between the metrology station and the exposure station, and wherein the positioning system is constructed for positioning one of the stages holding a substrate during exposure in the exposure station on the basis of at least one measured characteristic of that substrate;
wherein the stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement for bringing the lithographic apparatus from a first situation, wherein the said liquid is confined between a first substrate held by the first stage of the said stages and the final element, towards a second situation, wherein the said liquid is confined between a second substrate held by the second stage of the two stages and the final element, such that during the joint scan movement the liquid is essentially confined within said space with respect to the final element. The joint scan movement yields an increased throughput compared to conventional immersion lithographic apparatus wherein a separate closing disc is used for confining the liquid between the transfer from the said first situation and the said second situation.
In order to meet the desire the invention proposes a lithographic apparatus comprising:
a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam;
a measuring system for measuring characteristics of substrates in a metrology station of the apparatus;
a projection system configured to project the patterned radiation beam onto a substrate in an exposure station of the apparatus;
a positioning system for positioning at least two substrate stages of the lithographic apparatus, wherein the stages are constructed to hold substrates;
a machine frame which is provided with a first part of a planar motor for cooperating with respective second parts of the planar motor in the respective stages, wherein the positioning system is constructed and arranged to control the planar motor for moving the stages between the metrology station and the exposure station and for moving each of the said stages in the exposure station in six degrees of freedom on the basis of at least one measured characteristic of the substrate on the stage, wherein the machine frame is constructed and arranged to allow the stages to pass each other while moving between the metrology station and the exposure station. Since the stages can pass each other there is no need for a “stage-swap”. In this way an apparatus is provided with a relatively high throughput while having only one metrology station and only one exposure station, and wherein the apparatus has a relatively small “footprint”.
In order to meet the desire the invention proposes a lithographic apparatus comprising:
a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam;
a measuring system for measuring characteristics of substrates in a metrology station of the apparatus;
a projection system configured to project the patterned radiation beam onto a substrate in an exposure station of the apparatus;
a positioning system and at least two stages constructed to hold substrates, wherein the positioning system is constructed for moving the stages between the metrology station and the exposure station, and wherein the positioning system is constructed for positioning one of the stages holding a substrate during exposure in the exposure station on the basis of at least one measured characteristic of that substrate,
a machine frame having two essentially parallel guides extending in a first direction in a horizontal plane, wherein each guide is coupled to an element which can be moved along the guide by means of a motor, and wherein each element is coupled to a stage by means of a motor for moving the stage in a second direction directed in the horizontal plane and perpendicular to the first direction, wherein the positioning system is constructed and arranged for controlling the motors in order to move the stages in the plane, wherein the machine frame is constructed and arranged to allow the stages to pass each other while moving between the metrology station and the exposure station. Since the stages can pass each other there is no need for a “stage-swap”. In this way an apparatus is provided with a relatively high throughput while having only one metrology station and only one exposure station, and wherein the apparatus has a relatively small “footprint”.
In order to meet the desire the invention proposes a lithographic apparatus comprising:
a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam;
a measuring system for measuring characteristics of substrates in a metrology station of the apparatus;
a projection system configured to project the patterned radiation beam onto a substrate in an exposure station of the apparatus;
a positioning system and at least two stages constructed to hold substrates, wherein the positioning system is constructed for moving the stages between the metrology station and the exposure station, and wherein the positioning system is constructed for positioning one of the stages holding a substrate during exposure in the exposure station on the basis of at least one measured characteristic of that substrate;
a base frame carrying a metro frame which supports the measuring system and the projection system, wherein the metro frame is dynamically isolated from the base frame, and wherein the measuring system comprises an encoder system extending in both the metrology station and the exposure station for measuring the position of the stages. The said encoder system for example reduces the need of frequent TIS alignments (aligning masks/reticles on the one hand with substrates on the other hand via Transmission Image Sensors such as described in EP 1510870, incorporated herein by reference, see in particular
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
an illumination system (illuminator) 2 configured to condition a radiation beam 4 (e.g. UV radiation).
support structure (e.g. a mask table) 6 constructed to support a patterning device (e.g. a mask) 8 and coupled to a first positioner 10 configured to accurately position the patterning device in accordance with certain parameters;
a substrate table (e.g. a wafer table) WT constructed to hold a substrate (e.g. a resist-coated wafer) 14 and coupled (via a mirror block MB) to a second positioner 16 configured to accurately position the substrate in accordance with certain parameters; and
a projection system (e.g. a refractive projection lens system) 18 configured to project a pattern imparted to the radiation beam 4 by patterning device 8 onto a target portion C (e.g. comprising one or more dies) of the substrate 14.
The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The support structure supports, i.e. bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
Referring to
The illuminator 2 may comprise an adjuster 24 for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator 2 may comprise various other components, such as an integrator 26 and a condenser 28. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
The radiation beam 4 is incident on the patterning device (e.g., mask 8), which is held on the support structure (e.g., mask table 6), and is patterned by the patterning device. Having traversed the mask 8, the radiation beam 4 passes through the projection system 18, which focuses the beam onto a target portion C of the substrate 14. With the aid of the second positioner 16 and position sensor 30 (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT of a wafer stage St can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam 4. For this, known measure & Control algorithms with feedback and/or feedforward loops may be used. Similarly, the first positioner 10 and another position sensor (which is not explicitly depicted in
The second positioner 16 is arranged for positioning the mirror block MB and the substrate table WT. The second positioner 16 comprises the short stroke module (which is provided with a short stroke motor ShM) and the long stroke module (which is provided with a long stroke motor LoM).
The long stroke motor LoM comprises a stationary part LMS that can be mounted to a stationary frame or a balance mass (not shown) and a non-stationary part LMM that is displaceable relative to the stationary part. The short stroke motor ShM comprises a first non-stationary part SMS (that may be mounted to the non-stationary part LMM of the long stroke motor) and a second non-stationary part SMM (that may be mounted to the mirror block MB).
It should be noted that the mask table 6 and the first positioner 10 (see
A so-called dual stage (multi stage) machine may be equipped with two (or more) stages as described. Each stage can be provided with an object table (such as the substrate table WT). In such an arrangement, a preparatory step such as the measurement of a height map of the substrate disposed on one of the object tables can be performed in parallel with the exposure of the substrate disposed on another object table. In order to expose a substrate that previously has been measured, the stages may change position from the measurement location to the exposure location (and vice versa). As an alternative, the object tables can be moved from one stage to an other.
The apparatus depicted in
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
In
The position sensor 30 for measuring the position of the stage 42 may be an interferometer sensor 48.1 which is capable of directing interferometer measurement beams 50 towards interferometer mirrors 52 attached to the stage 42. As an alternative, the position sensor may be an encoder system 48.2 for measuring the position of the stage 42. However, it is noted here that combinations of interferometers and encoders, whereby the interferometer system measures different parameters than the encoder are also possible.
In the presented example of
If the position sensor 30 is an encoder plate 48.2, then this encoder plate may extend both in the exposure station 34 and the metrology station 32. In an advanced embodiment there is only one encoder plate which extends completely from the metrology station 32 to the exposure station 34.
A reticle stage or mask stage 6 is located above the projection system 18. The position of the reticle stage and the position of the mask/reticle are measured by a measuring system 60. The measuring system 60 cooperates with the position sensor 30 in order to align the mask/reticle with the substrate 14 under the projection system 18. Aligning the mask/reticle to the substrate is usually performed according to zero point sensors and US-alignment techniques (see for a description EP 1510870). For applying the TIS-alignment it is required that the position of the substrate with respect to the base frame 36 is known within a certain accuracy (rough indication as starting point for the fine TIS measurements) such that the substrate is in the capture range of the TIS sensor.
Generally, interferometer sensors measure relative positions (by counting fringes). In order to obtain absolute position measurements via the interferometer sensor the interferometer sensors can be “zerod” by means of a so-called zeroing-operation, which means that a reference point is defined in order to obtain absolute position measurements. Defining such a reference point is of special interest in a multi-stage apparatus, since in such an apparatus it frequently occurs that one stage eclipses another stage yielding a loss of an already defined reference point. If this happens it may be necessary to define a new reference point (according to a new zeroing operation) has to be defined which costs time and reduces throughput. However, the application of the encoder plate may yield an absolute measurement system which reduces or even eliminates the necessary zeroing operations which is beneficial for throughput. Furthermore, if the encoder plate has a high accuracy, the frequency of TIS-alignments itself may also be reduced or even eliminated (at least partly replaced by the encoder measurements), such that the throughput of the corresponding apparatus is further increased.
As shown in
Each guide 62 is coupled to elements 64 which can be moved along the guide 62 in the first direction (X -direction) by means of a motor of the positioning system. In the configuration of
In the configuration of
It is noted that the beams of the interferometers sometimes have to bridge relatively great distances between the interferometer system and the interferometer-mirror attached to the stage (see
The dual stage concept according to
As an alternative of the depicted “T-drive system” (guides 62.1, 62.2 and T-elements 64 in
According to an embodiment of the lithographic apparatus according to the invention there is provided an immersion liquid 66 between a final optical (lens) element of the projection system 18 and a target portion of the substrate 14 (
After exposure of a substrate the stage holding it has to move away, for example towards a metrology station. Since it is desired that the immersion fluid 66 is kept in its space under the final element of the projection system 18, special measures have to be taken before the stage can be moved away from its position under the space of the immersion liquid 66. A possibility is to use a separate closing disc or a separate small closing stage (unable to hold a substrate) which closes the space at the bottom, until a stage holding a substrate to be exposed takes the place of the closing disc/closing stage.
However, the said closing disc/closing stage yields extra take-over operations which cost valuable time and which appear to decrease the throughput of the lithographic apparatus significantly.
Therefore, it is an aspect of the invention to prevent the necessity of a closing disc (or closing stage) and to provide a lithographic apparatus wherein the stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement for bringing the lithographic apparatus from a first situation, wherein the said liquid is confined between a first substrate held by the first stage of the said stages and the final element, towards a second situation, wherein the said liquid is confined between a second substrate held by the second stage of the two stages and the final element, such that during the joint scan movement the liquid is essentially confined within said space with respect to the final element.
The said joint scan movement of the stages 42.1 and 42.2 is illustrated schematically in
In an advanced embodiment the respective first stage 42.1 and second stage 42.2 have respective immersion cross edges 72.1, 72.2 (situated at or near a side of the relevant stage, see
A different shape of the immersion cross edges 72.1, 72.2 is shown in
The lithographic apparatus according to the invention may comprise a control system (using a feedback and/or a feedforward loop) that may be fed with position measurements (actually the term position measurement may include position, velocity, acceleration and/or jerk measurements) of the stages (the measurements may be performed by the measurement system 44) for calculating setpoint-signals for the relevant motors. The motors are controlled during the joint scan movement of the stages by the positioning system according to the setpoint-signals such that the mutual constant distance D between the planes of the respective immersion cross edges corresponds to a pre-determined function. The pre-determined function may be chosen such that the space between the immersion cross edges functions a liquid channel character (see below for further description).
According to an embodiment of the lithographic apparatus, the positioning system is constructed and arranged to control the motors for moving the stages such that stage 42.1 pushes the stage 42.2 gently during the joint scan movement. Herewith, a control system (using a feedback and/or a feedforward loop) of the positioning system is fed with position measurements (actually the term position measurement may include position, velocity, acceleration and/or jerk measurements) of the stages (performed by the measurement system 44) and calculates setpoint-signals for the relevant motors. Next, motors are controlled by the positioning system according to the setpoint-signals such that the mutual constant distance D between the planes of the respective immersion cross edges is essentially zero.
According to a preferred embodiment of the lithographic apparatus, the positioning system is constructed and arranged to control the motors for moving the stages such that during the joint scan movement the said mutual distance D is larger than zero but smaller that 1 millimeter. A favorable mutual distance D appears to be between 0.05 and 0.2 millimeter. A distance D in this distance-range is especially favorable if one of the stages is provided with a channel system 74 leading to and from an opening the immersion cross edge, wherein the channel system 74 is constructed and arranged for generating a flow of gas and/or liquid along the immersion cross edge during the joint scan movement. The generation of this flow is of importance to reduce the chance that bubbles (bubbles deteriorate the projection of patterns on the substrate) are generated in the immersion liquid 66. A stable and well controlled distance D results in a stable and well favorable flow thereby avoiding the generation of bubbles in the immersion liquid during the joint scan movement.
The application of a channel system 74 may yield (during the joint scan movement) a gas flow from under the stages 42 (see for example
In the example of
The said interferometer system 48.1 uses interferometer-mirrors attached to the stages for position measuring. In the example of
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.
Notice: More than one reissue application has been filed for the reissue of U.S. Pat. No. 7,161,659. The reissue applications are application Ser. Nos. 12/318,821 (now RE43,576), filed on Jan. 8, 2009, 13/584,522 (now RE44,446), filed on Aug. 13, 2012, which is a continuation reissue patent application of application Ser. Nos. 12/318,821, and 13/970,429 (the present application), filed on Aug. 19, 2013, which is a continuation reissue patent application of application Ser. No. 13/584,522. The present application is a continuation reissue patent application of reissue patent application Ser. No. 13/584,522, filed Aug. 13, 2012 (now allowed), which is incorporated herein in its entirety by reference, which is a continuation reissue patent application of reissue patent application Ser. No. 12/318,821, filed Jan. 8, 2009 (now U.S. Pat. No. RE43,576), which is incorporated herein in its entirety by reference, which is a reissue application of U.S. patent application Ser. No. 11/135,655, filed May 24, 2005 (now U.S. Pat. No. 7,161,659), which is a Continuation In Part Application of U.S. application Ser. No. 11/101,631, filed on Apr. 8, 2005 now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
4346164 | Tabarelli et al. | Aug 1982 | A |
4465368 | Matsuura et al. | Aug 1984 | A |
4480910 | Takanashi et al. | Nov 1984 | A |
5121256 | Corle et al. | Jun 1992 | A |
5243195 | Nishi | Sep 1993 | A |
5610683 | Takahashi et al. | Mar 1997 | A |
5650840 | Taniguchi | Jul 1997 | A |
5715039 | Fukuda et al. | Feb 1998 | A |
5825043 | Suwa | Oct 1998 | A |
5969441 | Loopstra et al. | Oct 1999 | A |
6137561 | Imai | Oct 2000 | A |
6262796 | Loopstra et al. | Jul 2001 | B1 |
6341007 | Nishi et al. | Jan 2002 | B1 |
6400441 | Nishi et al. | Jun 2002 | B1 |
6417914 | Li | Jul 2002 | B1 |
6665054 | Inoue | Dec 2003 | B2 |
6897963 | Taniguchi et al. | May 2005 | B1 |
7075616 | Derksen et al. | Jul 2006 | B2 |
7098991 | Nagasaka et al. | Aug 2006 | B2 |
7119876 | Van Der Toorn et al. | Oct 2006 | B2 |
7199858 | Lof et al. | Apr 2007 | B2 |
7321419 | Ebihara | Jan 2008 | B2 |
7349069 | Beems et al. | Mar 2008 | B2 |
7388649 | Kobayashi et al. | Jun 2008 | B2 |
7405811 | Beems et al. | Jul 2008 | B2 |
7456929 | Shibuta | Nov 2008 | B2 |
7528931 | Modderman | May 2009 | B2 |
7589820 | Nei et al. | Sep 2009 | B2 |
7982857 | Nishii et al. | Jul 2011 | B2 |
8018575 | Ebihara | Sep 2011 | B2 |
8027027 | Ebihara | Sep 2011 | B2 |
RE43576 | Van Den Brink et al. | Aug 2012 | E |
RE44446 | Van Den Brink et al. | Aug 2013 | E |
20020041377 | Hagiwara et al. | Apr 2002 | A1 |
20020061469 | Tanaka | May 2002 | A1 |
20020163629 | Switkes et al. | Nov 2002 | A1 |
20020196421 | Tanaka et al. | Dec 2002 | A1 |
20030030916 | Suenaga | Feb 2003 | A1 |
20030076482 | Inoue | Apr 2003 | A1 |
20030117596 | Nishi | Jun 2003 | A1 |
20030128350 | Tanaka | Jul 2003 | A1 |
20030174408 | Rostalski et al. | Sep 2003 | A1 |
20040000627 | Schuster | Jan 2004 | A1 |
20040075895 | Lin | Apr 2004 | A1 |
20040109237 | Epple et al. | Jun 2004 | A1 |
20040114117 | Bleeker | Jun 2004 | A1 |
20040118184 | Violette | Jun 2004 | A1 |
20040119954 | Kawashima et al. | Jun 2004 | A1 |
20040125351 | Krautschik | Jul 2004 | A1 |
20040136494 | Lof et al. | Jul 2004 | A1 |
20040160582 | Lof et al. | Aug 2004 | A1 |
20040165159 | Lof et al. | Aug 2004 | A1 |
20040169834 | Richter et al. | Sep 2004 | A1 |
20040169924 | Flagello et al. | Sep 2004 | A1 |
20040180294 | Baba-Ali et al. | Sep 2004 | A1 |
20040180299 | Rolland et al. | Sep 2004 | A1 |
20040207824 | Lof et al. | Oct 2004 | A1 |
20040211920 | Maria Derksen et al. | Oct 2004 | A1 |
20040224265 | Endo et al. | Nov 2004 | A1 |
20040224525 | Endo et al. | Nov 2004 | A1 |
20040227923 | Flagello et al. | Nov 2004 | A1 |
20040233405 | Kato et al. | Nov 2004 | A1 |
20040253547 | Endo et al. | Dec 2004 | A1 |
20040253548 | Endo et al. | Dec 2004 | A1 |
20040257544 | Vogel et al. | Dec 2004 | A1 |
20040259008 | Endo et al. | Dec 2004 | A1 |
20040259040 | Endo et al. | Dec 2004 | A1 |
20040263808 | Sewell | Dec 2004 | A1 |
20040263809 | Nakano | Dec 2004 | A1 |
20050002004 | Kolesnychenko et al. | Jan 2005 | A1 |
20050007569 | Streefkerk et al. | Jan 2005 | A1 |
20050007570 | Streefkerk et al. | Jan 2005 | A1 |
20050018155 | Cox et al. | Jan 2005 | A1 |
20050018156 | Mulkens et al. | Jan 2005 | A1 |
20050024609 | De Smit et al. | Feb 2005 | A1 |
20050030497 | Nakamura | Feb 2005 | A1 |
20050030498 | Mulkens | Feb 2005 | A1 |
20050030506 | Schuster | Feb 2005 | A1 |
20050030511 | Auer-Jongepier et al. | Feb 2005 | A1 |
20050036121 | Hoogendam et al. | Feb 2005 | A1 |
20050036183 | Yeo et al. | Feb 2005 | A1 |
20050036184 | Yeo et al. | Feb 2005 | A1 |
20050036213 | Mann et al. | Feb 2005 | A1 |
20050037269 | Levinson | Feb 2005 | A1 |
20050041225 | Sengers et al. | Feb 2005 | A1 |
20050042554 | Dierichs et al. | Feb 2005 | A1 |
20050046813 | Streefkerk et al. | Mar 2005 | A1 |
20050046934 | Ho et al. | Mar 2005 | A1 |
20050048220 | Mertens et al. | Mar 2005 | A1 |
20050048223 | Pawloski et al. | Mar 2005 | A1 |
20050052632 | Miyajima | Mar 2005 | A1 |
20050068639 | Pierra et al. | Mar 2005 | A1 |
20050073670 | Carroll | Apr 2005 | A1 |
20050074704 | Endo et al. | Apr 2005 | A1 |
20050078286 | Dierichs et al. | Apr 2005 | A1 |
20050078287 | Sengers et al. | Apr 2005 | A1 |
20050084794 | Meagley et al. | Apr 2005 | A1 |
20050088635 | Hoogendam et al. | Apr 2005 | A1 |
20050094114 | Streefkerk et al. | May 2005 | A1 |
20050094116 | Flagello et al. | May 2005 | A1 |
20050094119 | Loopstra et al. | May 2005 | A1 |
20050094125 | Arai | May 2005 | A1 |
20050100745 | Lin et al. | May 2005 | A1 |
20050106512 | Endo et al. | May 2005 | A1 |
20050110973 | Streefkerk et al. | May 2005 | A1 |
20050117135 | Verhoeven et al. | Jun 2005 | A1 |
20050117224 | Shafer et al. | Jun 2005 | A1 |
20050122497 | Lyons et al. | Jun 2005 | A1 |
20050122505 | Miyajima | Jun 2005 | A1 |
20050128445 | Hoogendam et al. | Jun 2005 | A1 |
20050132914 | Mulkens et al. | Jun 2005 | A1 |
20050134815 | Van Santen et al. | Jun 2005 | A1 |
20050134817 | Nakamura | Jun 2005 | A1 |
20050136361 | Endo et al. | Jun 2005 | A1 |
20050141098 | Schuster | Jun 2005 | A1 |
20050145265 | Ravkin et al. | Jul 2005 | A1 |
20050145803 | Hakey et al. | Jul 2005 | A1 |
20050146693 | Ohsaki | Jul 2005 | A1 |
20050146694 | Tokita | Jul 2005 | A1 |
20050146695 | Kawakami | Jul 2005 | A1 |
20050147920 | Lin et al. | Jul 2005 | A1 |
20050153424 | Coon | Jul 2005 | A1 |
20050158673 | Hakey et al. | Jul 2005 | A1 |
20050164502 | Deng et al. | Jul 2005 | A1 |
20050174549 | Duineveld et al. | Aug 2005 | A1 |
20050174550 | Streefkerk et al. | Aug 2005 | A1 |
20050175776 | Streefkerk et al. | Aug 2005 | A1 |
20050175940 | Dierichs | Aug 2005 | A1 |
20050179877 | Mulkens et al. | Aug 2005 | A1 |
20050185269 | Epple et al. | Aug 2005 | A1 |
20050190435 | Shafer et al. | Sep 2005 | A1 |
20050190455 | Rostalski et al. | Sep 2005 | A1 |
20050205108 | Chang et al. | Sep 2005 | A1 |
20050213061 | Hakey et al. | Sep 2005 | A1 |
20050213072 | Schenker et al. | Sep 2005 | A1 |
20050217135 | O'Donnell et al. | Oct 2005 | A1 |
20050217137 | Smith et al. | Oct 2005 | A1 |
20050217703 | O'Donnell | Oct 2005 | A1 |
20050219481 | Cox et al. | Oct 2005 | A1 |
20050219482 | Baselmans et al. | Oct 2005 | A1 |
20050219488 | Nei et al. | Oct 2005 | A1 |
20050219499 | Maria Zaal et al. | Oct 2005 | A1 |
20050225737 | Weissenrieder et al. | Oct 2005 | A1 |
20050231694 | Kolesnychenko et al. | Oct 2005 | A1 |
20050233081 | Tokita | Oct 2005 | A1 |
20050237501 | Furukawa et al. | Oct 2005 | A1 |
20050237510 | Shibazaki | Oct 2005 | A1 |
20050243292 | Baselmans | Nov 2005 | A1 |
20050245005 | Benson | Nov 2005 | A1 |
20050253090 | Gau et al. | Nov 2005 | A1 |
20050259232 | Streefkerk et al. | Nov 2005 | A1 |
20050259233 | Streefkerk et al. | Nov 2005 | A1 |
20050259234 | Hirukawa et al. | Nov 2005 | A1 |
20050259236 | Straaijer | Nov 2005 | A1 |
20050263068 | Hoogendam et al. | Dec 2005 | A1 |
20050264778 | Lof et al. | Dec 2005 | A1 |
20050270505 | Smith | Dec 2005 | A1 |
20060061747 | Ishii | Mar 2006 | A1 |
20060082741 | Van Der Toorn et al. | Apr 2006 | A1 |
20060103820 | Donders et al. | May 2006 | A1 |
20060114445 | Ebihara | Jun 2006 | A1 |
20060126037 | Jansen et al. | Jun 2006 | A1 |
20060132733 | Modderman | Jun 2006 | A1 |
20070127006 | Shibazaki | Jun 2007 | A1 |
20070211234 | Ebihara | Sep 2007 | A1 |
20070211235 | Shibazaki | Sep 2007 | A1 |
20070247607 | Shibazaki | Oct 2007 | A1 |
20080002163 | Fujiwara et al. | Jan 2008 | A1 |
20080117393 | Fujiwara et al. | May 2008 | A1 |
20090109413 | Shibazaki et al. | Apr 2009 | A1 |
20100182584 | Shibazaki | Jul 2010 | A1 |
Number | Date | Country |
---|---|---|
221 563 | Sep 1983 | DE |
224 448 | Jul 1985 | DE |
1 041 357 | Oct 2000 | EP |
1 220 037 | Jul 2002 | EP |
1 306 592 | May 2003 | EP |
1 420 299 | May 2004 | EP |
1 486 827 | Dec 2004 | EP |
1 494 267 | Jan 2005 | EP |
1 486 827 | Mar 2005 | EP |
A 1 635 382 | Mar 2006 | EP |
A 57-117238 | Jul 1982 | JP |
A 57-153433 | Sep 1982 | JP |
A 58-202448 | Nov 1983 | JP |
A 59-19912 | Feb 1984 | JP |
A 62-65326 | Mar 1987 | JP |
A 63-157419 | Jun 1988 | JP |
A 4-065603 | Mar 1992 | JP |
A 4-305915 | Oct 1992 | JP |
A 4-305917 | Oct 1992 | JP |
A 5-021314 | Jan 1993 | JP |
A 5-62877 | Mar 1993 | JP |
A 6-124873 | May 1994 | JP |
A 7-176468 | Jul 1995 | JP |
A 7-220990 | Aug 1995 | JP |
A-7-335748 | Dec 1995 | JP |
A 8-037149 | Feb 1996 | JP |
A 8-316125 | Nov 1996 | JP |
A 10-163099 | Jun 1998 | JP |
A 10-214783 | Aug 1998 | JP |
A 10-255319 | Sep 1998 | JP |
A 10-303114 | Nov 1998 | JP |
A 10-340846 | Dec 1998 | JP |
A 11-016816 | Jan 1999 | JP |
A 11-176727 | Jul 1999 | JP |
A 2000-58436 | Feb 2000 | JP |
A 2000-505958 | May 2000 | JP |
A 2000-164504 | Jun 2000 | JP |
A 2000-511704 | Sep 2000 | JP |
A 2001-160530 | Jun 2001 | JP |
A 2001-241439 | Sep 2001 | JP |
A 2001-267239 | Sep 2001 | JP |
A 2002-014005 | Jan 2002 | JP |
A 2002-134390 | May 2002 | JP |
A 2002-305140 | Oct 2002 | JP |
A 2003-17404 | Jan 2003 | JP |
A 2003-249443 | Sep 2003 | JP |
A 2004-165666 | Jun 2004 | JP |
A 2004-207696 | Jul 2004 | JP |
A 2004-207711 | Jul 2004 | JP |
A 2004-289128 | Oct 2004 | JP |
WO 9840791 | Sep 1998 | WO |
WO 9923692 | May 1999 | WO |
WO 9949504 | Sep 1999 | WO |
WO 02091078 | Nov 2002 | WO |
WO 03077037 | Sep 2003 | WO |
WO 03085708 | Oct 2003 | WO |
WO 2004019128 | Mar 2004 | WO |
WO 2004053953 | Jun 2004 | WO |
WO 2004053955 | Jun 2004 | WO |
WO 2004114380 | Jun 2004 | WO |
WO 2004055803 | Jul 2004 | WO |
WO 2004057589 | Jul 2004 | WO |
WO 2004057590 | Jul 2004 | WO |
WO 2004077154 | Sep 2004 | WO |
WO 2004081666 | Sep 2004 | WO |
WO 2004090577 | Oct 2004 | WO |
WO 2004090633 | Oct 2004 | WO |
WO 2004090634 | Oct 2004 | WO |
WO 2004092830 | Oct 2004 | WO |
WO 2004092833 | Oct 2004 | WO |
WO 2004093130 | Oct 2004 | WO |
WO 2004093159 | Oct 2004 | WO |
WO 2004093160 | Oct 2004 | WO |
WO 2004095135 | Nov 2004 | WO |
WO 2004105107 | Dec 2004 | WO |
WO2004114380 | Dec 2004 | WO |
WO 2005001432 | Jan 2005 | WO |
WO 2005001572 | Jan 2005 | WO |
WO 2005003864 | Jan 2005 | WO |
WO 2005006026 | Jan 2005 | WO |
WO 2005008339 | Jan 2005 | WO |
WO 2005010611 | Feb 2005 | WO |
WO 2005013008 | Feb 2005 | WO |
WO 2005015283 | Feb 2005 | WO |
WO 2005017625 | Feb 2005 | WO |
WO 2005019935 | Mar 2005 | WO |
WO 2005022266 | Mar 2005 | WO |
WO 2005024325 | Mar 2005 | WO |
WO 2005024517 | Mar 2005 | WO |
WO 2005034174 | Apr 2005 | WO |
WO 2005048328 | May 2005 | WO |
WO 2005050324 | Jun 2005 | WO |
WO 2005054953 | Jun 2005 | WO |
WO 2005054955 | Jun 2005 | WO |
WO 2005059617 | Jun 2005 | WO |
WO 2005059618 | Jun 2005 | WO |
WO 2005059645 | Jun 2005 | WO |
WO 2005059654 | Jun 2005 | WO |
WO 2005062128 | Jul 2005 | WO |
WO 2005062351 | Jul 2005 | WO |
WO 2005064400 | Jul 2005 | WO |
WO 2005064405 | Jul 2005 | WO |
WO 2005069055 | Jul 2005 | WO |
WO 2005069078 | Jul 2005 | WO |
WO 2005069081 | Jul 2005 | WO |
WO 2005074606 | Aug 2005 | WO |
WO 2005076084 | Aug 2005 | WO |
WO 20051071491 | Aug 2005 | WO |
WO 2005081030 | Sep 2005 | WO |
WO 2005081067 | Sep 2005 | WO |
WO 2005098504 | Oct 2005 | WO |
WO 2005098505 | Oct 2005 | WO |
WO 2005098506 | Oct 2005 | WO |
WO 2005106589 | Nov 2005 | WO |
WO 2005111689 | Nov 2005 | WO |
WO 2005111722 | Nov 2005 | WO |
WO 2005119368 | Dec 2005 | WO |
WO 2005119369 | Dec 2005 | WO |
Entry |
---|
Preliminary Amendment filed on Jan. 8, 2008 in U.S. Appl. No. 11/785,716 of Ebihara. |
Preliminary Amendment filed on Jan. 8, 2008 in U.S. Appl. No. 11/812,919 of Shibazaki. |
Information Disclosure Statement Letter filed on Jan. 9, 2008 in U.S. Appl. No. 12/007,348 of Fujiwara et al. |
Lin, B.J., “Semiconductor Foundry, Lithography, and Partners”, Proceedings of SPIE, vol. 4688, pp. 11-24, 2002. |
Switkes, M., et al., “Resolution Enhancement of 157nm Lithography by Liquid Immersion”, Proceedings of SPIE, vol. 4691, pp. 459-465, 2002. |
Switkes, M., et al., “Resolution Enhancement of 157nm Lithography by Liquid Immersion”, J. Microlith., Microfab., Microsyst., vol. 1, No. 3, pp. 1-4, 2002. |
Owa, Soichi, et al., “Nikon F2 Exposure Tool”, slides 1-25, 3rd 157nm Symposium, Sep. 4, 2002. |
Owa, Soichi, “Immersion Lithography”, slides 1-24, Immersion Lithography Workshop, Dec. 11, 2002. |
Owa, Soichi, et al., “Immersion Lithography; its Potential Performance and Issues”, Proceedings of SPIE, vol. 5040, pp. 724-733, 2003. |
Owa, Soichi, et al., “Potential Performance and Feasibility of Immersion Lithography”, slides 1-33, NGL Workshop 2003, Jul. 2003. |
Owa, Soichi, et al., “Update on 193nm Immersion Exposure Tool”, slides 1-38, Immersion Workshop 2004, Jan. 27, 2004. |
Owa, Soichi, et al., “Update on 193nm Immersion Exposure Tool”, slides 1-51, Litho Forum, Jan. 28, 2004. |
Chinese Office Action dated Aug. 31, 2011 in corresponding Chinese Patent Application No. 201110039515.9. |
Office Action dated Sep. 9, 2009 in U.S. Appl. No. 11/812,919. |
Office Action dated Apr. 23, 2010 in U.S. Appl. No. 11/812,919. |
Office Action dated Mar. 1, 2011 in U.S. Appl. No. 11/812,919. |
Office Action dated Sep. 1, 2011 in U.S. Appl. No. 11/812,919. |
Office Action dated Dec. 3, 2008 in U.S. Appl. No. 11/785,716. |
Office Action dated Nov. 10, 2011 in U.S. Appl. No. 12/007,348. |
Office Action dated Apr. 14, 2011 in U.S. Appl. No. 12/007,348. |
Office Action dated Aug. 20, 2010 in U.S. Appl. No. 12/007,348. |
Office Action dated Nov. 18, 2009 in U.S. Appl. No. 12/007,348. |
Office Action dated Jan. 6, 2009 in U.S. Appl. No. 12/007,348. |
Chinese Office Action dated Jun. 14, 2012 in corresponding Chinese Patent Application No. 201110039515.9. |
Number | Date | Country | |
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Parent | 13584522 | Aug 2012 | US |
Child | 11135655 | US | |
Parent | 12318821 | Jan 2009 | US |
Child | 13584522 | US |
Number | Date | Country | |
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Parent | 11101631 | Apr 2005 | US |
Child | 11135655 | US |
Number | Date | Country | |
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Parent | 11135655 | May 2005 | US |
Child | 13970429 | US | |
Parent | 11135655 | May 2005 | US |
Child | 12318821 | US |