The present application is a division of U.S. patent application Ser. No. 09/846,123 filed Apr. 30, 2001, now U.S. Pat. No. 6,559,055 B2 incorporated herein by reference, which is a continuation-in-part of U.S. patent application Ser. No. 09/640,139 filed Aug. 15, 2000, now U.S. Pat. No. 6,355,524, incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
4794565 | Wu et al. | Dec 1988 | A |
5029130 | Yeh | Jul 1991 | A |
5045488 | Yeh | Sep 1991 | A |
5067108 | Jenq | Nov 1991 | A |
5120671 | Tang et al. | Jun 1992 | A |
5202850 | Jenq | Apr 1993 | A |
5212541 | Bergemont | May 1993 | A |
5217920 | Mattox et al. | Jun 1993 | A |
5242848 | Yeh | Sep 1993 | A |
5264387 | Beyer et al. | Nov 1993 | A |
5265059 | Wells et al. | Nov 1993 | A |
5278087 | Jenq | Jan 1994 | A |
5376573 | Richart et al. | Dec 1994 | A |
5399516 | Bergendahl et al. | Mar 1995 | A |
5479368 | Keshtbod | Dec 1995 | A |
5543339 | Roth et al. | Aug 1996 | A |
5576232 | Hong | Nov 1996 | A |
5587332 | Chang et al. | Dec 1996 | A |
5616941 | Roth et al. | Apr 1997 | A |
5640031 | Keshtbod | Jun 1997 | A |
5661053 | Yuan | Aug 1997 | A |
5668757 | Jeng | Sep 1997 | A |
5696019 | Chang | Dec 1997 | A |
5712179 | Yuan | Jan 1998 | A |
5736442 | Mori | Apr 1998 | A |
5763309 | Chang | Jun 1998 | A |
5770501 | Hong | Jun 1998 | A |
5776787 | Keshtbod | Jul 1998 | A |
5851879 | Lin et al. | Dec 1998 | A |
5856943 | Jeng | Jan 1999 | A |
5909628 | Chatterjee et al. | Jun 1999 | A |
5912843 | Jeng | Jun 1999 | A |
5943261 | Lee | Aug 1999 | A |
5953255 | Lee | Sep 1999 | A |
5963473 | Norman | Oct 1999 | A |
5965913 | Yuan et al. | Oct 1999 | A |
5991204 | Chang | Nov 1999 | A |
6001687 | Chu et al. | Dec 1999 | A |
6001706 | Tan et al. | Dec 1999 | A |
6013551 | Chen et al. | Jan 2000 | A |
6025229 | Hong | Feb 2000 | A |
6027971 | Cho et al. | Feb 2000 | A |
6028336 | Yuan | Feb 2000 | A |
6043530 | Chang | Mar 2000 | A |
6043536 | Numata et al. | Mar 2000 | A |
6054355 | Inumiya et al. | Apr 2000 | A |
6057572 | Ito et al. | May 2000 | A |
6057575 | Jenq | May 2000 | A |
6066544 | Pan et al. | May 2000 | A |
6087208 | Krivokapic et al. | Jul 2000 | A |
6103592 | Levy et al. | Aug 2000 | A |
6108236 | Barnett | Aug 2000 | A |
6165692 | Kanai et al. | Dec 2000 | A |
6166415 | Sakemi et al. | Dec 2000 | A |
6169012 | Chen et al. | Jan 2001 | B1 |
6171910 | Hobbs et al. | Jan 2001 | B1 |
6171971 | Natzle | Jan 2001 | B1 |
6171976 | Cheng | Jan 2001 | B1 |
6177303 | Schmitz et al. | Jan 2001 | B1 |
6191001 | Chen et al. | Feb 2001 | B1 |
6191049 | Song | Feb 2001 | B1 |
6191444 | Clampitt et al. | Feb 2001 | B1 |
6198657 | Uekubo et al. | Mar 2001 | B1 |
6222775 | Cappelletti | Apr 2001 | B1 |
6228715 | Shimoji | May 2001 | B1 |
6261883 | Koubuchi et al. | Jul 2001 | B1 |
6266277 | Roohparvar | Jul 2001 | B1 |
6355524 | Tuan et al. | Mar 2002 | B1 |
6392928 | Roohparvar | May 2002 | B1 |
6403417 | Chien et al. | Jun 2002 | B1 |
6643186 | Tuan et al. | Nov 2003 | B2 |
Number | Date | Country |
---|---|---|
61-191052 | Aug 1986 | JP |
Entry |
---|
S. Aritome et al., “A 0.67mn2 Self-Aligned Shallow Trench Isolation Cell (SA-STI Cell) For 3V -only 256Mbit Nand EEPROMs”, (IEDM Tech. Dig. Dec. 11-14, 1994, pp. 61-64), pp. 3.6.1-3.6.4. |
William D. Brown et al., “Nonvolatile Semiconductor Memory Technology” “A Comprehensive Guide to Understanding and Using NVSM Devices”, (IEEE Press series on microelectronic systems 1998), pp. 21-23. |
K. Naruke et al., “A New Flash-Erase EEProm Cell With A Sidewall Select-Gate On Its Source Side”, (IEDM Tech. Dig. Dec. 3-6, 1989, pp, 603-606), pp. 25.7.1-25.7.4. |
K. Shimizu et al., “A Novel High-Density 5F2 NAND STI Cell Technology Suitable for 256Mbit and 1 Gbit Flash Memories”, (IEEE Tech. Dig. Dec. 7-10, 1997, pp. 271-274), pp. 11.1.1-11.1.4. |
R. Shirota, “A Review of 256Mbit NAND Flash Memories and NAND Flash Future Trend”, (Microelectronics Engineering Laboratory), unknown date before Aug. 15, 2000, pp. 22-31. |
R. Shirota, “A Review of 256Mbit NAND Flash Memories and NAND Flash Future Trend”, Nonvolatile Memory Workshop, Monterey, CA, Feb. 2000, pp. 22-31. |
A. T. Wu et al., “A Novel High-Speed, 5-Volt Programming Eprom Structure With Source-Side Injection”, (IEDM Tech. Dig., pp. 584-587, 1986), pp. 108-111. |
William D. Brown et al., “Nonvolatile Semiconductor Memory Technology” A Comprehensive Guide to Understanding and Using NVSM Devices, IEEE Press 1998, pp. 241-245. |
Number | Date | Country | |
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Parent | 09/640139 | Aug 2000 | US |
Child | 09/846123 | US |