with a particular manufacturing method of the gate insulating layers

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H01L21/823462

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823462with a particular manufacturing method of the gate insulating layers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Seam-filling of metal gates with Si-containing layers
- Patent number 12,176,401
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a dummy fin contacting a gate isolation region
- Patent number 12,176,415
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gate structure and method of manufacturing...
- Patent number 12,170,280
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having conductive structures along pillars of...
- Patent number 12,142,680
- Issue date Nov 12, 2024
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-deposition treatment for FET technology and devices formed thereby
- Patent number 12,142,531
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 12,136,628
- Issue date Nov 5, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,125,750
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Sang Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,125,706
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structures and methods for forming the same
- Patent number 12,119,390
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 12,119,266
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques and configurations to reduce transistor gate short defects
- Patent number 12,094,780
- Issue date Sep 17, 2024
- Intel Corporation
- Sridhar Govindaraju
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,087,637
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel devices and methods of manufacture
- Patent number 12,087,638
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming 2-D material semiconductor device with improved...
- Patent number 12,080,557
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,057,478
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) method and devices
- Patent number 12,057,485
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having gate dielectric layers of varying thic...
- Patent number 12,051,695
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with dielectric layer
- Patent number 12,051,746
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,046,650
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,046,596
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Wei-Lun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,040,234
- Issue date Jul 16, 2024
- United Microelectronics Corp.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating nitrogen in dipole engineering for multi-threshold vo...
- Patent number 12,040,365
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,033,897
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 12,027,424
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Sheng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure including resistor network for back biasing FET stack
- Patent number 12,028,053
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure with dummy fi...
- Patent number 12,020,988
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES
- Publication number 20240421209
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Publication number 20240413016
- Publication date Dec 12, 2024
- Intel Corporation
- Sridhar GOVINDARAJU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413017
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Yi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System-On-Chip and Fabrication Method Therefor
- Publication number 20240413153
- Publication date Dec 12, 2024
- Chengdu Analog Circuit Technology Inc.
- Dan Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240395896
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...
- Publication number 20240395628
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387028
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...
- Publication number 20240387277
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Hung Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS
- Publication number 20240387647
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240379449
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION
- Publication number 20240379818
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GAT...
- Publication number 20240379788
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DOPING HIGH-K METAL GATES FOR TUNING THRESHOLD VOLTAGES
- Publication number 20240379365
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Feng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-END GATE STRUCTURES AND METHOD FORMING SAME
- Publication number 20240379821
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240363425
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240347606
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240347388
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Sheng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240339514
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240332087
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING...
- Publication number 20240332382
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Hsiang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240332086
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240332359
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240321644
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIEN-HAO CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20240304449
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device and Method
- Publication number 20240290867
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS INTEGRATION METHOD FOR IMPROVING LEAKAGE IN MV DEVICE
- Publication number 20240282635
- Publication date Aug 22, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qiwei WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED INTEGRATED CIRCUIT DEVICE
- Publication number 20240274686
- Publication date Aug 15, 2024
- Samsung Electronics Co., Ltd.
- Byungho MOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
V-NAND STACKS WITH DIPOLE REGIONS
- Publication number 20240268108
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Yong Yang
- G11 - INFORMATION STORAGE

with a particular manufacturing method of the gate insulating layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Seam-filling of metal gates with Si-containing layers

Device with a dummy fin contacting a gate isolation region

Method of manufacturing gate structure and method of manufacturing...

Fin field effect transistor having conformal and non-conformal gate...

Gate structure and methods thereof

Transistor structures having conductive structures along pillars of...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Pre-deposition treatment for FET technology and devices formed thereby

Semiconductor device

High voltage three-dimensional devices having dielectric liners

Semiconductor device and method for fabricating the same

Semiconductor device and method of manufacture

Gate spacer structures and methods for forming the same

Semiconductor arrangement and method of manufacture

Techniques and configurations to reduce transistor gate short defects

Semiconductor device and method of manufacture

Multi-channel devices and methods of manufacture

Method for forming 2-D material semiconductor device with improved...

Gate structures for semiconductor devices

Gate-all-around (GAA) method and devices

Semiconductor devices having gate dielectric layers of varying thic...

Semiconductor device structure with dielectric layer

Semiconductor devices

Semiconductor structure and forming method thereof

Semiconductor device and method for fabricating the same

Incorporating nitrogen in dipole engineering for multi-threshold vo...

Method for forming semiconductor structure

Semiconductor integrated circuit

Structure including resistor network for back biasing FET stack

Fin field effect transistor (FinFET) device structure with dummy fi...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

System-On-Chip and Fabrication Method Therefor

HIGH-K GATE DIELECTRIC

GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...

SEMICONDUCTOR DEVICE AND METHOD

MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPO...

SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS

SEMICONDUCTOR STRUCTURE

DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION

THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GAT...

METHODS FOR DOPING HIGH-K METAL GATES FOR TUNING THRESHOLD VOLTAGES

FIN-END GATE STRUCTURES AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

MULTI-CHANNEL DEVICES AND METHODS OF MANUFACTURE

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

SEMICONDUCTOR INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Gate Structures For Semiconductor Devices

SEMICONDUCTOR STRUCTURE

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

FinFET Device and Method

PROCESS INTEGRATION METHOD FOR IMPROVING LEAKAGE IN MV DEVICE

STACKED INTEGRATED CIRCUIT DEVICE

V-NAND STACKS WITH DIPOLE REGIONS