This application claims priority to French application number 2309488, filed Sep. 8, 2023. The content of this application is incorporated herein by reference in its entirety.
The present description relates to the field of electrical connection between an electronic chip and a package or between two electronic chips, and more particularly to connection pillars of the electronic chip.
In an electronic chip, connections are made by inner interconnection networks. To connect an integrated circuit chip to an outer element, these interconnection networks are connected to pillars, generally located on one face of the chip. In this way, it is possible to contact the pillars with conductive areas or connection tracks located on this other element. The element may correspond to a substrate, also known as a package, particularly in the field of power electronics, such as a printed circuit. The element could also correspond to another electronic chip.
An example of a method of assembling an electronic chip to another electronic chip or package comprises forming a block of sinter paste on each pillar, depositing the electronic chip on the other electronic chip or package, and sintering the sinter paste. In some applications, sintering is carried out at a temperature below 200° C., and without exerting pressure on the electronic chip. For such applications, the step of depositing the electronic chip on the other electronic chip or the package is carried out before drying the sinter paste.
One embodiment overcomes some or all of the drawbacks of electronic chips comprising known connection pillars.
One embodiment provides an electronic chip comprising a support and connection pillars, each connection pillar comprising a trunk including an end portion and an intermediate portion coupling the end portion to the support and comprising a collar at the junction between the end portion and the intermediate portion.
According to one embodiment, the height of the end portion is between 10 μm and 100 μm.
According to one embodiment, the height of the intermediate portion is between 10 μm and 100 μm.
According to one embodiment, the difference between the maximum lateral dimension of the collar and the minimum lateral dimension of the end portion is between 1 μm and 7 μm.
According to one embodiment, the end portion comprises an end face on the side opposite the intermediate portion.
According to one embodiment, the end portion has a flared shape on the end-face side.
According to one embodiment, the connection pillar comprises a finishing layer covering the end face.
According to one embodiment, the trunk is made of copper.
One embodiment also provides a method of assembling an electronic chip as defined above to another electronic chip or to a package, comprising penetrating the connection pillars into a layer of sinter paste at least up to the collar of each connection pillar, removing the connection pillars from the layer of sinter paste, a block of sinter paste remaining attached to each connection pillar, depositing the electronic chip on the other electronic chip or on the package, and heating to obtain sintering of the blocks of sinter paste.
One embodiment also provides a method of manufacturing an electronic chip as defined above, comprising forming a first photosensitive resin mask comprising, for each connection pillar, a first through opening, depositing the material making up the trunk in the first through openings, forming a second photosensitive resin mask comprising a second through opening in the extension of each first through opening, and depositing the material making up the trunk in the second through openings.
The foregoing features and advantages, as well as others, will be described in detail in the following description of specific embodiments given by way of illustration and not limitation with reference to the accompanying drawings, in which:
Like features have been designated by like references in the various Figures. In particular, the structural and/or functional features that are common among the various embodiments may have the same references and may dispose identical structural, dimensional and material properties.
For the sake of clarity, only the operations and elements that are useful for an understanding of the embodiments described herein have been illustrated and described in detail. In particular, the various components of the chips, as well as the inner connections of the chips, are not described in detail.
Unless indicated otherwise, when reference is made to two elements connected together, this signifies a direct connection without any intermediate elements other than conductors, and when reference is made to two elements coupled together, this signifies that these two elements can be connected or they can be coupled via one or more other elements. Furthermore, the terms “insulator” and “conductor” are taken to mean “electrically insulating” and “electrically conductive” respectively.
In the following disclosure, unless indicated otherwise, when reference is made to absolute positional qualifiers, such as the terms “front”, “back”, “top”, “bottom”, “left”, “right”, etc., or to relative positional qualifiers, such as the terms “above”, “below”, “higher”, “lower”, etc., or to qualifiers of orientation, such as “horizontal”, “vertical”, etc., reference is made to the orientation shown in the Figures, or to an electronic circuit as orientated during normal use.
Unless specified otherwise, the expressions “around”, “approximately”, “substantially” and “in the order of” signify within 10%, and preferably within 5%.
Each pillar 15 comprises a trunk 16 having an intermediate portion 20 and an end portion 30. The intermediate portion 20 is located between the support 10 and the end portion 30. The pillar 15 comprises a collar 17 at the junction between the intermediate portion 20 and the end portion 30. The intermediate portion 20 comprises a base 22, a coupling face 24 opposite the base 22, and a side wall 26 coupling the base 22 to the coupling face 24. The end portion 30 comprises a coupling face 32, an end face 34 opposite the coupling face 32, and a side wall 36 coupling the coupling face 32 to the end face 34. The base 22 of the intermediate portion 20 is in direct physical contact with the support 12. The coupling face 24 of the intermediate portion 20 is coincident with the coupling face 32 of the end portion 30. According to one embodiment, the side wall 36 of the end portion 30 further comprises a flared part 38 on the side of the top face 32. According to one embodiment, the side wall 26 of intermediate portion 20 further comprises a flared part 28 on the side of base 22.
The side wall 26 of intermediate portion 20 is contained between a circular-based inner cylinder Cint of axis Δ and a circular-based outer cylinder Cext of axis Δ, and is in contact with inner cylinder Cint and outer cylinder Cext. According to one embodiment, the coupling face 24 of the intermediate portion 20 is substantially perpendicular to the axis Δ. The height H of the intermediate portion 20, measured along the axis Δ, is between 10 μm and 100 μm, and is preferably equal to approximately 50 μm. The diameter of the inner cylinder Cint is between 10 μm and 3 mm, and is preferably equal to about 50 μm. The difference between the radius of the outer cylinder Cext and the radius of the inner cylinder Cint is between 1 μm and 100 μm, preferably between 1 μm and 7 μm. According to one embodiment, the pitch between the axes A of adjacent pillars 15 is between 20 μm and 7 mm, and is preferably equal to approximately 100 μm. According to one embodiment, except in the vicinity of the base 22 and coupling face 24, intermediate portion 20 is essentially cylindrical in shape with a circular base.
The side wall 36 of the end portion 30 is contained between a circular-based inner cylinder Cint′ of axis Δ′ and a circular-based outer cylinder Cext′ of axis Δ′, and is in contact with the inner cylinder Cint′ and the outer cylinder Cext′. The axis Δ is parallel to the axis Δ′. According to one embodiment, the axis Δ′ is coincident with the axis Δ. However, the axis Δ′ can be offset from the axis Δ. The offset between the axis Δ′ and the axis Δ can be between 0 μm and 6 μm. According to one embodiment, the coupling face 32 of the end portion 30 is substantially perpendicular to the axis Δ. According to one embodiment, the end face 34 of the end portion 30 is substantially perpendicular to the axis Δ. The height H′ of the end portion 30 measured along the axis Δ′ is between 10 μm and 100 μm, preferably between 10 μm and 40 μm, and is for example equal to approximately 20 μm. The difference between the radius of the outer cylinder Cext′ and the radius of the inner cylinder Cint′ is between 1 μm and 7 μm, preferably between 1 μm and 4 μm. According to one embodiment, except in the vicinity of coupling face 32 and end face 34, end portion 30 is essentially cylindrical in shape with a circular base.
Trunk 16 is made of metal, for example copper, nickel, silver, gold or an alloy of these metals.
According to one embodiment, the pillar 15 further comprises a finishing layer 18 covering the end face 34 of the end portion 30 of the trunk 16. The thickness of the finishing layer 18 is between 10 nm and 1,000 nm. Finishing layer 18 is made of a conductive material that improves the adhesion of the sinter paste. For example, finishing layer 18 is made of a metal, in particular gold or silver, and optionally comprises a bonding and/or barrier layer(s), comprising for example platinum (Pt), palladium (Pd), nickel (Ni), titanium (Ti), chromium (Cr), and/or tantalum (Ta), between the material of trunk 16 and the material of the sinter paste subsequently deposited on pillar 15. The finishing layer 18 also allows oxidation of the end face 34 of the pillar 15 to be prevented in the case where the assembly method is not carried out in a neutral or reducing atmosphere.
The chip 10 is positioned above the paste layer 50 in a vertical direction and at a distance from the paste layer 50. The finishing layer 18 of each pillar 15 is oriented towards the paste layer 50. The dynamic viscosity of the paste layer 50 is between 20 Pa·s and 60 Pa·s. The thixotropy of the paste layer 50 is between 3 and 7. Paste layer 50 is made of a sinterable material. In particular, paste layer 50 comprises an active filler comprising particles of a metallic material, for example silver, copper, or an alloy of silver and copper. The active filler could also comprise gold and other additives, such as polymers and/or ceramics, which do not participate in the sintering process but facilitate the methods for implementing the sinter paste. The proportion of active filler in the paste layer 50 is between 60% and 97% by weight.
The method goes on with a heating step that causes the paste block 52 to sinter, and the chip 10 to adhere to the chip or package 54, for example at a temperature below 200° C. According to one embodiment, during the heating step, no pressure is exerted on chip 10, or only a pressure of less than 1 MPa. According to one embodiment, the heating temperature is between 130° C. and 300° C., preferably between 150° C. and 250° C.
Substrate 60 may, for example, be made of silicon, silicon carbide (SIC), III-V compounds, in particular gallium nitride (GaN), or diamond. Substrate 60 could have a single-layer or multi-layer structure, for example of the Silicon-On-Insulator (SOI) type. According to one embodiment, the thickness of substrate 60 is between 100 μm and 900 μm, for example 200 μm. The insulating layer 62 is, for example, a silicon oxide layer. According to one embodiment, the thickness of the insulating layer 62 is between 100 nm and 2 μm, and is for example equal to 200 nm. The conductive track 64 comprises, for example, a stack of metal layers. According to one embodiment, the metal track 64 could be performed by whole-wafer depositing metal layers and etching the metal layers to form the metal track 64. According to one embodiment, the thickness of the metal track 64 is between 200 nm and 2 μm, and is for example equal to 500 nm. The metal layers of the metal track are made, for example, of materials selected from copper, a copper alloy, titanium, a titanium alloy, titanium nitride, platinum and a platinum alloy.
In the embodiment previously described in relation to
Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these embodiments can be combined and other variants will readily occur to those skilled in the art. Finally, the practical implementation of the embodiments and variants described herein is within the capabilities of those skilled in the art based on the functional description provided hereinabove.
Number | Date | Country | Kind |
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2309488 | Sep 2023 | FR | national |