Claims
- 1. An article comprising:
a microfluidic device comprising a dielectric film comprising a polymer selected from the group consisting of polyimides having at least one carboxylic ester structural units in the polymer backbone; liquid crystal polymers; and polycarbonates; wherein said dielectric film has a chemically etched indentation.
- 2. An article according to claim 1 wherein the indentation is a channel or a reservoir.
- 3. An article according to claim 1 wherein the indentation is a reaction chamber.
- 4. An article according to claim 3 wherein reaction chamber contains a heater.
- 5. An article according to claim 1 wherein the indentation is covered by a cap layer.
- 6. An article according to claim 5 wherein the cap layer has an opening.
- 7. An article according to claim 1 wherein the indentation contains a conductive bump.
- 8. An article according to claim 7 wherein the conductive bump is in contact with a cap layer covering the indentation.
- 9. An article according to claim 1 wherein a portion of the surface of the indentation contains a conductive material.
- 10. An article according to claim 9 wherein the conductive material is an electrode.
- 11. An article according to claim 5 wherein the cap layer contains conductive traces.
- 12. An article according to claim 11 wherein a portion of at least one conductive trace forms a portion of the cap layer surface exposed to the indentation.
- 13. An article according to claim 1 further comprising an integrated circuit.
- 14. A method comprising:
providing a dielectric film comprising a polymer selected from the group consisting of polyimides having a carboxylic ester structural unit in the polymer backbone; liquid crystal polymers; and polycabonates; chemically etching an indentation into said dielectic film.
- 15. A method according to claim 14 wherein said indentation having a width of about 10 to about 200 μm and a depth up to about 75% of the initial dielectric thickness.
- 16. A method according to claim 14 wherein the indentation is a channel or a reservoir.
- 17. A method according to claim 14 further comprising covering the indentation with a cap layer.
- 18. A method according to claim 14 further comprising forming an opening in the cap layer.
- 19. A method according to claim 16 wherein the dielectric film contains at least one area of conductive material, a portion of which is exposed when the indentation is etched in the dielectric film.
- 20. A method according to claim 19 wherein the portion of conductive material in the indentation is etched away.
- 21. A method according to claim 14 wherein the dielectric film is etched with an aqueous solution comprising
about 30 wt. % to about 55 wt. % of an alkali metal salt; and about 10 wt. % to about 35 wt. % of a solubilizer dissolved in said solution.
- 22. A method according to claim 14 wherein said alkali metal salt is selected from the group consisting of sodium hydroxide and potassium hydroxide.
- 23. A method according to claim 14 wherein said solubilizer is an amine.
- 24. A method according to claim 14 wherein said solubilizer is ethanolamine.
- 25. A method according to claim 14 wherein the etching is carried out at a temperature of about 50° C. to about 120° C.
- 26. An article according to claim 1 wherein the indentation contains a fluid.
- 27. An article according to claim 1 wherein the indentation contains an analyte.
Parent Case Info
[0001] This application is a continuation-in-part application of currently pending U.S. patent application Ser. No. 10/235465, filed Sep. 5, 2002, which is hereby incorporated by reference.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10235465 |
Sep 2002 |
US |
Child |
10792535 |
Mar 2004 |
US |