Claims
- 1. A method for growing a solid state film from a liquid, said method comprising the steps of:
a) providing a substrate; b) covering said substrate with said liquid; c) establishing and maintaining a growing atmosphere around said substrate, wherein activated oxygen or nitrogen is introduced and controlled in said growing atmosphere; and d) supplying atoms for growing said film onto a surface of said liquid; and e) maintaining said liquid in a thermodynamic equilibrium with said film such that said film grows or is precipitated from said liquid and said film nucleates at and stabilizes on said substrate.
- 2. The method of claim 1, wherein said step of establishing and maintaining said growing atmosphere further comprising a step of reducing atmosphere pressure to less than 10−4 Torr.
- 3. The method of claim 1, wherein said atoms are Y, Ba, and Cu atoms and said liquid flux is a BaxCuyOz liquid flux.
- 4. A method for in-situ high rate growth of a high quality high temperature superconducting film from a liquid flux at reduced pressure, said method comprising the steps of:
a) providing a substrate; b) covering said substrate with said liquid flux; c) establishing and maintaining a growing atmosphere substantially below atmospheric pressure around said substrate, wherein activated oxygen and molecular oxygen are introduced and controlled in said growing atmosphere; and d) continuously supplying atoms for growing said film onto a surface of said liquid flux; and e) maintaining said liquid flux in a thermodynamic equilibrium with said film such that said film grows or is precipitated from said liquid flux at an interface between said liquid flux and said substrate and said film stabilizes on said substrate.
- 5. The method of claim 4, wherein said substrate is selected from the group consisting of SrTiO3, LAO, sapphire, IBAD YSZ/Ni, IBAD-MgO/Ni, and RABiTS substrates.
- 6. The method of claim 4, wherein said atoms are Y, Ba, and Cu atoms and said liquid flux is a BaxCuyOz liquid flux.
- 7. The method of claim 4, wherein said step of establishing and maintaining said growing atmosphere further comprising a step of reducing atmosphere pressure to less than 5×10−5 Torr.
- 8. The method of claim 4, wherein a partial pressure of said activated oxygen is less than 10−4 Torr.
- 9. The method of claim 4, wherein said film comprises a superconducting oxide.
- 10. The method of claim 9, wherein said superconducting oxide is yttrium-barium-copper-oxide (YBCO).
- 11. The method of claim 4, wherein said step of supplying atoms comprises a step of vapor depositing said atoms on said surface.
- 12. The method of claim 4, wherein said step of supplying atoms comprises a technique selected from the group consisting of in-situ e-beam deposition, sputtering, flame spraying, combustion chemical vapor deposition, pulsed laser deposition, MOCVD, hot cluster (plasma flash) deposition, and cathodic arc deposition.
- 13. A system for in-situ high rate growth of a high quality high temperature superconducting film, said system comprising:
a vacuum chamber having a background pressure being maintained close to 3×10−5 Torr; a substrate positioned in said vacuum chamber and having a local pressure of about 2×10−4 Torr; a liquid flux covering a surface of said substrate; activated oxygen generated in a microwave-induced discharge chamber and introduced through a quartz tube into said vacuum chamber and impinges on said substrate via a Teflon tube; a deposition means for supplying atoms for growing said film onto a surface of said liquid flux; and a controlling means for maintaining said liquid flux in a thermodynamic equilibrium with said film such that said film grows or is precipitated from said liquid flux at an interface between said liquid flux and said substrate and said film stabilizes on said substrate.
- 14. The system of claim 13, wherein said deposition means further comprising:
an in-situ e-beam; and a deposition controller means for monitoring and controlling deposition rates.
- 15. The system of claim 14, wherein said deposition controller comprises a tunable diode laser based atomic absorption sensor capable of real-time monitoring and fast PID feedback flux controlling.
- 16. The system of claim 13, wherein said substrate is selected from the group consisting of SrTiO3, LAO, MgO, sapphire, and IBAD YSZ/Ni, IBAD MgO/Ni, and RABiTS substrates.
- 17. The system of claim 13, wherein said atoms are Y, Ba, and Cu atoms and said liquid flux is a BaxCuyOz liquid flux.
- 18. The system of claim 13, wherein said film comprises a superconducting oxide.
- 19. The system of claim 18, wherein said superconducting oxide is yttrium-barium-copper-oxide (YBCO).
- 20. The system of claim 13, wherein said deposition means is selected from the group consisting of sputtering, flame spraying, combustion chemical vapor deposition, pulsed laser deposition, and MOCVD, hot cluster (plasma flash) deposition, and cathodic arc deposition.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Application No. 60/312,377, filed Aug. 14, 2001, which is hereby incorporated herein by reference.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[0002] This invention was supported in part by the U.S. Department of Energy (DOE) under contract number 19XTA478C. SPO No. 20165. The U.S. government has certain rights in this invention.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60312377 |
Aug 2001 |
US |