During the manufacture of microelectronic devices, many layers may be fabricated on a substrate, and a reticle or photomask may be required for each layer that may be formed, or patterned on a substrate, such as a silicon wafer
As the dimensions of patterned layers on microelectronic devices have become increasingly small, radiation sources such as deep ultraviolet (248 nm or 193 nm), vacuum ultraviolet (157 nm) and extreme ultraviolet (EUV) (13.4 nm) have been are being used or are being considered. EUV lithography, which uses a source at 13.5 nm wavelength, is a promising technology for 0.3 micron and below microelectronic device fabrication, for example. Since the absorption at that wavelength is very strong in most materials, EUV lithography may employ reflective mask reticles, rather than through-the-mask reticles used in longer wavelength lithography.
While the specification concludes with claims particularly pointing out and distinctly claiming certain embodiments of the present invention, the advantages of this invention can be more readily ascertained from the following description of the invention when read in conjunction with the accompanying drawings in which:
a-1b methods of forming structures according to an embodiment of the present invention.
a-2c represent methods of forming structures according to another embodiment of the present invention.
In the following detailed description, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that the various embodiments of the invention, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described herein, in connection with one embodiment, may be implemented within other embodiments without departing from the spirit and scope of the invention. In addition, it is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, appropriately interpreted, along with the full range of equivalents to which the claims are entitled. In the drawings, like numerals refer to the same or similar functionality throughout the several views.
Methods and associated structures of forming and utilizing a microelectronic structure, such as a reticle capping layer structure, are described. Those methods may comprise providing a substrate comprising a first reflective layer disposed on a second reflective layer, wherein the thickness of the first reflective layer and the thickness of the second reflective layer are less than about 100 angstroms, and forming a ruthenium oxide layer on the substrate, wherein the ruthenium oxide layer is about fifty angstroms or less.
a-1b illustrate an embodiment of a method of forming a microelectronic structure, such as a reticle capping layer structure, for example.
In one embodiment, the first reflective layer 102a, 102b may comprise silicon, and the second reflective layer 104a, 104b may comprise molybdenum. In one embodiment, the first reflective layer 102a, 102b may comprise a thickness of less than about 100 angstroms. In another embodiment, the first reflective layer 102a, 102b may comprise a thickness from about 20 to about 80 angstroms. In one embodiment, the second reflective layer 104a, 104b may comprise a thickness of less than about 100 angstroms. In another embodiment, the second reflective layer 104a, 104b may comprise a thickness from about 20 to about 80 angstroms. In one embodiment, the substrate 100 may comprise a combined total of approximately 20-100 alternating layers of the first reflective layer 104a, 104b and the second reflective layer 102a, 102b, as is known in the art.
A ruthenium oxide layer 106 may be formed on the reflective substrate 100, and may comprise a reticle capping layer structure, as is well known in the art (
The ruthenium oxide layer 106 may reflect radiation in the EUV region, such as a wavelength comprising about 15 nm or less in one embodiment. In one embodiment, the ruthenium oxide layer 106 may reflect (i.e., comprise a reflectivity) greater than about 70 percent of incident EUV radiation that may be directed toward it, such as in a EUV lithographic process as is well known in the art. In another embodiment, the substrate 100 with the ruthenium oxide layer 106 disposed on top of the substrate 100 as a capping layer, for example, may reflect greater than about 70 percent of incident EUV radiation that may be directed toward it.
In one embodiment, the ruthenium oxide layer 106 and/or the reflective substrate 100 with the ruthenium oxide layer 106 disposed as a capping layer on it may comprise a lifetime of about 1 percent in about 30,000 hours of use, i.e., the ruthenium oxide layer 106 may lose about 1 percent of its reflectivity of EUV radiation in about 30,000 hours of use during a typical EUV process, depending upon the particular process parameters. In one embodiment, the substrate 100 comprising the ruthenium oxide layer 106 disposed as a capping layer on the substrate 100 may comprise a lifetime of about 1 percent in about 30,000 hours.
Because the ruthenium oxide layer 106 of
The ruthenium oxide layer 106 may catalyze a reaction between oxygen and carbon that may be present in a chamber and/or present on the reflective substrate 100, for example during a EUV lithographic process as is well known in the art. The ruthenium oxide layer 106 may catalyze a reaction that may comprise oxygen reacting with carbon and/or carbon monoxide to form carbon dioxide, for example. Thus, by catalyzing the formation of carbon dioxide, the ruthenium oxide layer 106 disposed on the substrate 100 may prevent oxidation of the reflective substrate 100 by substantially removing available oxygen from the lithographic chamber.
a-2c depict another embodiment of a method of forming a microelectronic structure, such as a reticle capping layer structure, for example.
In one embodiment, an oxygen containing ruthenium layer 208 may be formed on and/or within the amorphous ruthenium layer 205 (
The amorphous ruthenium layer 205 with the oxygen containing ruthenium layer 208 adsorbed on and/or in it may comprise a reticle capping layer structure 209, that may serve to protect the reflective substrate 200 from oxidation, for example, since in one embodiment, the adsorbed oxygen containing ruthenium layer 208 may prevent oxidation of the underlying amorphous ruthenium layer 205 and may prevent the oxidation of the reflective substrate 200, as is well known in the art.
The reticle capping layer structure 209 may reflect radiation in the EUV region, such as a wavelength comprising about 15 nm or less in one embodiment. In one embodiment, the capping layer 209 and/or the capping layer disposed on the substrate 200 may reflect greater than about 70 percent of EUV radiation that may be directed toward the capping layer 209 and/or the capping layer 209 disposed on the substrate 200, such as in a EUV lithographic process as is well known in the art. In one embodiment, the capping layer 209 and/or the reflective substrate 200 with the capping layer 209 disposed on it may comprise a lifetime of about 1 percent in about 30,000 hours, i.e., the capping layer 209 and/or reflective substrate 200 with the capping layer disposed on it may lose about 1 percent of reflectivity of EUV radiation in about 30,000 hours.
The amorphous ruthenium layer 205 and/or capping layer 209 may catalyze a reaction between oxygen and carbon that may be present in a chamber and/or present on the reflective substrate 200, for example during a EUV lithographic process as is well known in the art. The catalyzed reaction may comprise oxygen reacting with carbon and/or carbon monoxide to form carbon dioxide, for example. Thus, by catalyzing the formation of carbon dioxide, the amorphous ruthenium layer 205 and/or capping layer 209 may prevent oxidation of the reflective substrate 200 by substantially removing available oxygen from the lithographic chamber.
In the system 300, a substrate 326, that in one embodiment may comprise a reflective substrate, such as but not limited to a EUV mask, may be provided. The substrate 326 may comprise a reticle capping layer structure 327, similar to the reticle capping layer structures 106 and 209 of
In one embodiment, incident radiation 322, which in one embodiment may be EUV radiation, (i.e. comprising a wavelength between about 12 to about 14 nm), may generated from the radiation source 320, and may further be directing onto the reticle capping layer structure 327 and on the substrate 326. Reflected radiation 324 may comprise above about 70 percent of the incident radiation 322 that may be reflected off the substrate 326 and capping layer structure 327.
Although the foregoing description has specified certain steps and materials that may be used in the method of the present invention, those skilled in the art will appreciate that many modifications and substitutions may be made. Accordingly, it is intended that all such modifications, alterations, substitutions and additions be considered to fall within the spirit and scope of the invention as defined by the appended claims. In addition, it is appreciated that various microelectronic structures, such as reticle capping layer structures, are well known in the art. Therefore, the Figures provided herein illustrate only portions of an exemplary microelectronic structure that pertains to the practice of the present invention. Thus the present invention is not limited to the structures described herein.