Claims
- 1. A method of etching silicon oxide comprising the steps of:
providing a substrate in a process chamber, the substrate comprising exposed silicon oxide; evacuating the chamber to a pressure of less than about 1 torr; providing a gaseous mixture of at least one alcohol and water to the process chamber and substrate; and subsequently further providing a gaseous anhydrous halogen containing species to the gaseous mixture provided to the process chamber and substrate.
- 2. The method of claim 1 wherein the gaseous mixture further comprises an inert gas.
- 3. The method of claim 2 wherein the inert gas is selected from the group consisting of nitrogen, Ar, Kr, Xe and combinations thereof.
- 4. The method of claim 3 wherein the inert gas is nitrogen gas.
- 5. The method of claim 1 wherein the alcohol is IPA.
- 6. The method of claim 1 wherein the halogen containing species is HF.
- 7. The method of claim 2 wherein the inert gas is nitrogen, the alcohol is IPA and the halogen containing species is HF.
- 8. The method of claim 7 wherein the IPA and water are provided in a ratio of from 83:17 to 93:7 by weight.
- 9. The method of claim 8 wherein the IPA and water are provided in a ratio of 88:12 by weight.
- 10. The method of claim 8 wherein the HF, the nitrogen and the IPA and water in combination are provided on a volume basis ratio of 20-30:20-30:1
- 11. The method of claim 1 further comprising the step of exposing the substrate to UV photons to heat the substrate to a temperature above ambient prior to providing the gaseous mixture to the substrate.
- 12. The method of claim 1 wherein the silicon oxide is located on semiconductor substrate.
- 13. A method of etching silicon oxide from a semiconductor substrate comprising the steps of:
providing a semiconductor substrate in a process chamber, the semiconductor substrate comprising exposed silicon oxide; evacuating the chamber to a pressure of less than about 1 torr; providing a gaseous mixture of nitrogen, IPA and water to the process chamber and semiconductor substrate; and subsequently further providing gaseous anhydrous HF to the gaseous mixture provided to the process chamber and semiconductor substrate.
- 14. The method of claim 13 wherein the IPA and water are provided in a ratio of from 83:17 to 93:7 by weight.
- 15. The method of claim 14 wherein the IPA and water are provided in a ratio of 88:12 by weight.
- 16. The method of claim 13 wherein the HF, the nitrogen and the IPA and water in combination are provided on a volume basis ratio of 20-30:20-30:1.
- 17. A method of etching silicon oxide comprising the steps of:
providing an in-process microelectronic device in a process chamber, the in-process microelectronic device comprising exposed silicon oxide; evacuating the chamber to a pressure of less than about 1 torr; providing a gaseous mixture of at least one alcohol and water to the process chamber and in-process microelectronic device; and subsequently further providing a gaseous anhydrous halogen containing species to the gaseous mixture provided to the process chamber and in-process microelectronic device.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority from U.S. provisional application No. 60/195,873, filed Apr. 7, 2000, the entire contents of which are incorporated herein by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60195873 |
Apr 2000 |
US |