Claims
- 1. A method for fabricating a plurality of gate devices comprising the steps of:providing a substrate having a surface; forming a plurality of spaced apart elongated projections, each having a coplanar surface remote from said substrate and sidewalls and disposed on and extending from said substrate, each projection including an access channel for the gate device; forming a first terminal and a second terminal for each of said projections coupled to the sidewalls of each said access channel; filling the space between each of said projections with an electrical insulator coplanar with said coplanar surfaces of said projections; and forming a gate structure over each said access channel operable to control the associated access channel to selectively couple the first terminal to the second terminal of the associated access channel.
- 2. The method of claim 1, wherein the elongated projections comprises substrate material and are formed by patterning and etching the substrate.
- 3. The method of claim 1, wherein the gate structure is disposed over the first and second terminals and the access channel.
- 4. The method of claim 1, wherein the gate structure is disposed over the access channel between the first and second terminals.
- 5. The method of claim 1, wherein the first and second terminals are formed in the elongated projections.
- 6. The method of claim 1 wherein said first and second terminals of each of said projections extends to said coplanar surface.
- 7. The method of claim 2 wherein said first and second terminals of each of said projections extends to said coplanar surface.
- 8. The method of claim 3 wherein said first and second terminals of each of said projections extends to said coplanar surface.
- 9. The method of claim 4 wherein said first and second terminals of each of said projections extends to said coplanar surface.
- 10. The method of claim 5 wherein said first and second terminals of each of said projections extends to said coplanar surface.
- 11. The method of claim 2, wherein the first and second terminals are formed in the elongated projections.
- 12. The method of claim 3, wherein the first and second terminals are formed in the elongated projections.
- 13. The method of claim 4, wherein the first and second terminals are formed in the elongated projections.
- 14. The method of claim 6, wherein the first and second terminals are formed in the elongated projections.
- 15. The method of claim 7, wherein the first and second terminals are formed in the elongated projections.
- 16. The method of claim 8, wherein the first and second terminals are formed in the elongated projections.
- 17. The method of claim 9, wherein the first and second terminals are formed in the elongated projections.
- 18. The method of claim 10, wherein the first and second terminals are formed in the elongated projections.
RELATED APPLICATIONS
“This application is a division of Ser. No. 09/405,737 filed Sep. 24, 1999, now U.S. Pat. No. 6,330,181 which claimed priority based upon provisional application No. 60/102,359, filed Sep. 29, 1998. This application is related to copending applications Ser. No. 09/405,828, now U.S. Pat. Nos. 6,300,179 and 09/400,688, now U.S. Pat. No. 6,423,569.”
US Referenced Citations (20)
Foreign Referenced Citations (3)
Number |
Date |
Country |
4110008379 |
Jan 1999 |
JP |
06291279 |
Dec 1999 |
JP |
11340430 |
Dec 1999 |
JP |
Non-Patent Literature Citations (1)
Entry |
US 5,404,036, 4/1995, Morihara (withdrawn) |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/102359 |
Sep 1998 |
US |