Claims
- 1. A contact comprising:
a conductive silicide material interface having a profile which substantially covers a bottom and sidewall portions of a contact opening within an active-device region in a silicon-containing semiconductor substrate, the conductive silicide material interface exhibiting a slightly concave shape at corners of the bottom of the contact opening and extending up the sidewall portions of the contact opening within the active-device region; and a conductive material layer positioned atop the conductive silicide material interface.
- 2. The contact of claim 1, wherein the conductive silicide material interface comprises a titanium silicide interface.
- 3. The contact of claim 1, wherein the conductive material layer comprises a tungsten layer.
- 4. The contact of claim 1, further comprising a titanium nitride layer located between the conductive silicide material interface and the conductive material layer.
- 5. The contact of claim 1, wherein the profile of the conductive silicide material interface exhibits a substantially level profile of relatively constant depth.
- 6. The contact of claim 1, wherein the conductive silicide material interface substantially covers any exposed surface of the active-device region.
- 7. A DRAM chip comprising at least one contact, the contact including:
a conductive silicide material interface having a profile which substantially covers a bottom and sidewall portions of a recess within an active-device region in a silicon-containing semiconductor substrate, the conductive silicide material interface exhibiting a slightly concave shape at corners of the bottom of the recess and extending up the sidewall portions of the recess within the active-device region; and a conductive material layer positioned atop the conductive silicide material interface.
- 8. The contact of claim 7, wherein the conductive silicide material interface comprises a titanium silicide interface.
- 9. The contact of claim 7, wherein the conductive material layer comprises a tungsten layer.
- 10. The contact of claim 7, further comprising a titanium nitride layer located between the conductive silicide material interface and the conductive material layer.
- 11. The contact of claim 7, wherein the profile of the conductive silicide material interface exhibits a substantially level profile of relatively constant depth.
- 12. The contact of claim 7, wherein the conductive silicide material interface substantially covers any exposed surface of the active-device region.
- 13. A contact interface comprising a conductive material which is capable of forming a silicide material, wherein the conductive material has a profile which substantially covers a bottom and sidewall portions of a recess within an active-device region in a silicon-containing semiconductor substrate to a substantially consistent depth, the conductive material exhibiting a slightly concave shape at corners of the bottom of the recess, extending up the sidewall portions and covering surfaces of the active-device region.
- 14. The contact of claim 13, wherein the conductive material comprises titanium.
- 15. The contact of claim 13, wherein the silicide material comprises titanium silicide.
- 16. The contact of claim 13, wherein the conductive material substantially covers any exposed surface of the active-device region.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of application Ser. No. 09/584,004, filed May 30, 2000, pending, which is a divisional of application Ser. No. 09/063,608, filed Apr. 21, 1998, now U.S. Pat. No. 6,121,134, issued Sep. 19, 2000.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09063608 |
Apr 1998 |
US |
Child |
09584004 |
May 2000 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09584004 |
May 2000 |
US |
Child |
10301070 |
Nov 2002 |
US |