Embodiments described herein relate to methods of manufacturing semiconductor substrates. More specifically, embodiments described herein relate to apparatus for performing high-speed epitaxy processes.
In semiconductor processing, various processes are commonly used to form films that have functionality in a semiconductor device. Among those processes are certain types of deposition processes referred to as epitaxy. In an epitaxy process, a gas mixture is typically introduced in a chamber containing one or more substrates on which an epitaxial layer is to be formed. Process conditions are maintained to encourage the vapor to form a high quality material layer on the substrate. Epitaxy is generally favored when high quality and uniformity of a film deposited across the surface of a substrate are desired.
Eiptaxy is commonly performed in deposition chambers that accommodate one workpiece at a time. Such chambers are used to form epitaxial layers a few nanometers thick on semiconductor substrates for increasingly small logic devices. Forming such layers typically takes a few minutes and may yield dozens of devices for each substrate. Thus, for logic devices such processes are still nominally useful.
New semiconductor processes are being designed that use epitaxial layers that may be many microns thick. Such layers might take hours or days to grow using conventional epitaxy apparatus, as described above. Thus, there is a need for a high-speed epitaxy system and methods.
Embodiments described herein include a substrate support for an epitaxy chamber. The substrate support may have a first surface having a plurality of recesses; a second surface opposite the first surface and together with the first surface defining a first edge and a second edge, opposite the first edge, of the substrate support, and a third edge between the first and second edges, and a fourth edge opposite the third edge; an opening through each recess from the first surface to the second surface; a ledge within each recess around a periphery of each opening; and a notch in each of the first and second edges, and a tab extending from each of the first and second edges.
Other embodiments include a substrate carrier, comprising an elongated base member having a first groove and a second groove extending longitudinally along the base member; a first substrate support seated in the first groove of the base member, the first substrate support comprising a plurality of recesses in a planar distribution, the first substrate support having a first edge and a second edge opposite the first edge; a second substrate support seated in the second groove of the base member, the second substrate support comprising a plurality of recesses in a planar distribution facing the recesses of the first substrate support, the second substrate support having a first edge aligned with the first edge of the first substrate support and a second edge aligned with the second edge of the first substrate support; a first wedge coupled to the elongated base member and joining the corresponding first edges of the first and second substrate supports; a second wedge coupled to the elongated base member opposite the first wedge and joining the corresponding second edges of the first and second substrate supports; a lid that, together with the elongated base member, the first and second substrate supports, and the first and second wedges, encloses a processing volume; and a third substrate support disposed in the processing volume, the third substrate support comprising a first surface having a plurality of recesses, each recess having an opening; a second surface opposite the first surface and together with the first surface defining a first edge and a second edge, opposite the first edge, of the substrate support, and a third edge between the first and second edges, and a fourth edge opposite the third edge; a ledge within each recess around a periphery of each opening; and a notch in each of the first and second edges, and a tab extending from each of the first and second edges.
Other embodiments include a substrate carrier, comprising an elongated base member having a first groove and a second groove extending longitudinally along the base member, and a plurality of openings between the first groove and the second groove; a first substrate support seated in the first groove of the base member, the first substrate support comprising a plurality of recesses in a planar distribution, the first substrate support having a first edge and a second edge opposite the first edge; a second substrate support seated in the second groove of the base member, the second substrate support comprising a plurality of recesses in a planar distribution facing the first substrate support, the second substrate support having a first edge aligned with the first edge of the first substrate support and a second edge aligned with the second edge of the first substrate support; a first wedge coupled to the elongated base member and joining the corresponding first edges of the first and second substrate supports, the first wedge comprising a prop and a pin; a second wedge coupled to the elongated base member opposite the first wedge and joining the corresponding second edges of the first and second substrate supports; a lid that, together with the elongated base member, the first and substrate supports, and the first and second wedges, encloses a processing volume; a lock rotatably disposed on the pin of the first wedge; and a third substrate support disposed on the elongated base member between the first and second substrate supports, the third substrate support comprising a first surface having a plurality of recesses, each recess having an opening through the recess; a second surface opposite the first surface and together with the first surface defining a first edge and a second edge, opposite the first edge, of the third substrate support, and a third edge between the first and second edges, and a fourth edge opposite the third edge; a ledge within each recess around a periphery of each opening; and a notch in each of the first and second edges, and a tab extending from each of the first and second edges, wherein the tab has a groove that engages with the lock, and the tab is positioned to engage with the prop.
So that the manner in which the above-recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
Embodiments described herein generally relate to methods and apparatus for performing high-speed epitaxy. Such methods and apparatus may be useful for forming thick, high-quality epitaxial layers for devices such as crystalline silicon solar panels.
A first substrate support 108 is seated in the first groove 104 and a second substrate support 110 is seated in the second groove 106. The first substrate support 108 is disposed at an angle to the second substrate support 110 by operation of a support tray 112 that holds the first and second substrate supports 108 and 110 in angled relationship. The support tray 112 may have an extension 222 that engages a top groove in each of the first substrate support 108 and the second substrate support 110.
A third substrate support 132 is disposed between the first substrate support 108 and the second substrate support 110. The third substrate support 132 holds one or more substrates in a processing orientation between the first substrate support 108 and the second substrate support 110, so that two opposing surfaces of the one or more substrates may be exposed to a processing environment between the first substrate support 108 and the second substrate support 110, enabling processing of both major surfaces of a substrate concurrently in the substrate carrier 100.
The first substrate support 108 has a plurality of recesses 206 in a planar distribution across a surface of the first substrate support 108 for holding substrates. The recesses 206 are typically distributed across a surface 208 of the first substrate support 108 that faces the third substrate support 132 when the first substrate support 108 is in a closed configuration. The second substrate support 110 has a similar arrangement of heat sources, which may be radiant or resistive.
The first substrate support 108 has a first edge 202 and a second edge 204 opposite the first edge.
A first wedge 232 is disposed on the elongated base member 102 at a first end 216 thereof. A second wedge 232 is disposed on the elongated base member 102 at a second end 216 thereof. The elongated base member 102, the first substrate support 108, the second substrate support 110, the first wedge 232, the second wedge 232, and the support tray 112 together define and enclose a processing volume 218 (
Each of the first substrate support 108 and the second substrate support 110 has a third edge 226, the third edge 226 of the first substrate support 108 visible in
Referring again to
Precursor gases may be provided to the substrate carrier 100 by coupling a gas plenum to the support tray 112. The gases flow through the support tray 112 into the processing volume 218. A gas distributor may be used with the support tray 112 to provide uniform gas flow into the processing volume 218, if desired.
The third substrate support 132 is disposed in the processing volume 218 and divides the processing volume 218 into two parts 218A and 2188. The third substrate support 132 may bifurcate the processing volume 218 into two parts 218A and 2188 having the same volume. A prop 140 and a lock 142 maintain the third substrate support 132 in an upright position inside the processing volume 218. The lock 142 is shown in
A third edge 316 of the third substrate support 132 between the first edge 306 and the second edge 308 has a plurality of posts 318, each pair of posts 318 being separated by a cutout 320. When the third substrate support 132 is in a processing position in the processing volume 218, the posts 318 rest on the ridge 126, and the cutouts 320 provide clearance for gas to flow from the processing volume 218 to the gas outlet portals 230 (
A plurality of recesses 322 are formed in the third substrate support 132. Each recess has an opening 324 through the third substrate support 132 from the first surface 302 to the second surface 304. Each recess 322 is defined by an outer wall 326, and has a ledge 328 that extends from the outer wall 326 inward to cover a peripheral portion 330 of the opening 324. Each ledge 328 is disposed around the periphery of an opening 324, and has a clamp area 332 that extends away from an inner radius 334 of the ledge 328.
A clamp slot 348 may be provided through the third substrate support 132 adjacent to each clamp area 332. A clamp 350 may be inserted into the clamp slot 348 and clamped over the clamp tab 346 of the frame 342 and the clamp area 332 of the recess 322 to secure the frame 342 to the third substrate support 132, and secure the substrate 340 between the frame 342 and the ledge 328. To remove a substrate 340 from the substrate support 342, the clamp 350 may be removed from the clamp slot 348, and the frame 342 may be removed.
The recesses 322 shown in
While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof.
Filing Document | Filing Date | Country | Kind |
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PCT/US2015/046380 | 8/21/2015 | WO | 00 |
Number | Date | Country | |
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62040725 | Aug 2014 | US |