The present disclosure relates to a multi-beam charged particle inspection system and a method of operating a multi-beam charged particle inspection system, such as a multi-beam charged particle beam inspection system for wafer inspection with high throughput, high resolution and high reliability and a related method and a computer program product. The method and the multi-beam charged particle beam inspection system can be configured to extract from a plurality of sensor data a set of control signals to control the multi-beam charged particle beam inspection system.
With the continuous development of ever smaller and more sophisticated microstructures such as semiconductor devices further development and optimization of planar fabrication techniques and inspection systems for fabrication and inspection of the small dimensions of the microstructures is desirable. Development and fabrication of the semiconductor devices can involve for example design verification of test wafers, and the planar fabrication techniques involves process optimization for reliable high throughput fabrication. In addition, recently the analysis of semiconductor wafers for reverse engineering and customized, individual configuring of semiconductor devices can be involved. High throughput inspection tools for the examination of the microstructures on wafers with high accuracy are therefore usually desired.
Typical silicon wafers used in manufacturing of semiconductor devices have diameters of up to 12 inches (300 mm). Each Wafer is segmented in 30-60 repetitive areas (“Dies”) of about up to 800 sq mm size. A semiconductor comprises a plurality of semiconductor structures fabricated in layers on a surface of the wafer by planar integration techniques. Due to the fabrication processes involved, semiconductor wafers typically have a flat surface. The feature size of the integrated semiconductor structures can extend between few μm down to the critical dimensions (CD) of 5 nm, with even decreasing features sizes in near future, for example feature sizes or critical dimensions (CD) below 3 nm, for example 2 nm, or even below 1 nm. With the small structure sizes mentioned above, defects of the size of the critical dimensions are desirably identified in a very large area in a short time.
A recent development in the field of charged particle microscopes CPM is the MSEM, a multi-beam scanning electron microscope. A multi beam charged particle beam microscope is disclosed, for example, in U.S. Pat. No. 7,244,949, in US20190355545 or in US20190355544. In multi beam charged particle microscope, such as a multi beam electron microscope or MSEM, sample is irradiated by an array of electron beamlets, comprising for example 4 up to 10000 electron beams, as primary radiation, whereby each electron beam is separated by a distance of 1-200 micrometers from its next neighboring electron beam. For example, a MSEM has about 100 separated electron beams or beamlets, arranged on a hexagonal array, with the electron beamlets separated by a distance of about 10 μm. The plurality of primary charged particle beamlets is focused by a common objective lens on a surface of a sample under investigation, for example a semiconductor wafer fixed on a wafer chuck, which is mounted on a movable stage. During the illumination of the wafer surface with primary charged particle beamlets, interaction products, e.g. secondary electrons, originate from the plurality of intersection points formed by the focus points of the primary charged particle beamlets, while the amount and energy of interaction products depend on the material composition and topography of the wafer surface. The interaction products form a plurality of secondary charged particle beamlets, which is collected by the common objective lens and guided onto a detector arranged at a detector plane by a projection imaging system of the multi-beam inspection system. The detector comprises a plurality of detection areas with each comprising a plurality of detection pixels and detects an intensity distribution for each of the plurality of secondary charged particle beamlets and an image patch of for example 100 μm×100 μm is obtained.
Certain known multi-beam charged particle microscopes comprise a sequence of electrostatic and magnetic elements. At least some of the electrostatic and magnetic elements are adjustable to adjust focus position and stigmation of the plurality of secondary charged particle beams. As an example, U.S. Ser. No. 10/535,494 proposes a re-adjustment of the charged particle microscope, if the detected intensity distribution of a focus of a secondary charged particle beamlet deviates from a predetermined intensity distribution. An adjustment is achieved, if the detected intensity distribution is in accordance with the predetermined intensity distribution. A global displacement or deformation of the intensity distributions of secondary charged particle beamlets allows for drawing conclusions on topography effects, the geometry or a tilt of the sample, or charging effects of the sample. U.S. Pat. No. 9,336,982 discloses a secondary charged particle detector with a scintillator plate to convert secondary charged particles to light. To reduce a loss of conversion efficiency of the scintillator plate, the relative lateral position of the focus spots of the plurality of secondary charged particle beamlets and the scintillator plate is variable, for example by a charged particle beam deflector or an actuator for lateral displacement of the scintillator plate.
Certain known multi-beam charged particle microscopes comprise at least one cross over plane of the primary or of the secondary charged particle beamlets. Such known multi-beam charged particle microscopes comprise detection systems and methods to facilitate the adjustment.
It is generally desirable to change the imaging settings of a charged particle microscope. A method of changing image acquisition settings of a multi-beam charged particle microscope from a first imaging setting to a different, second imaging setting is described by U.S. Pat. No. 9,799,485.
In charged particle microscopes for wafer inspection, however, it is desired to maintain imaging conditions stable, such that imaging can be performed with high reliability and high repeatability. The throughput depends on several parameters, for example speed of the stage and re-alignment at new measurement sites, as well as the measured area per acquisition time itself. The latter is determined by dwell time, resolution and the number of beamlets. Between the acquisition of two image patches, the wafer is laterally moved to the next point of interest by the wafer stage. The stage movement and precision alignment to the next position for image acquisition is one of the limiting factors for the throughput of the multi-beam inspection system. During image acquisition with high throughput, unwanted stage movements or drifts can deteriorate the image resolution. During image acquisition with high throughput, drifts and deviations of the predetermined primary and secondary charged particle beam paths have a negative influence on the image quality and reliability of the measurement result. For example, the plurality of primary charged particle beamlets can deteriorate from the raster configuration within the planar area segment, or the resolution of the multi-beam charged particle inspection system can be changing.
Single beam electron microscopes commonly use a so-called beam error function (BEF) for improving positioning accuracy of the electron beam as well as the stage movement. The BEF feeds back a (position) signal derived from the stage that holds the sample onto the beam deflection system to this end. A recent example is given in WO2020/136094 A2. Multi-beam charged particle microscopes however have higher complexity and the simple methods of single beam electron microscope are not enough. For example, a rotation of the plurality of focus points of the plurality of primary charged particle beamlets relative to the wafer stage cannot be compensated via known technology. Further, multi-beam charged particle microscopes have an imaging projective system for imaging the plurality of secondary electron beamlets onto a detector, and a precise imaging of the plurality of secondary electron has to be maintained. In addition, aberrations of the secondary beam path are separated and considered as well.
U.S. Pat. No. 9,530,613 shows a method of focus control of a multi-beam charged particle microscope. A subset of the plurality of charged particle beamlets is shaped in astigmatic form and used for detection of a deviation of a focus position. From the respective elliptical shape of the beamlets of astigmatic shape, an error signal is generated and either a vertical position of a sample stage is adjusted or a current through one or more lenses of the charged particle microscope is altered. Thereby, the focus spots of the plurality of charged particle beamlets is optimized. The method works in parallel with normal operation of a scanning electron microscope. However, the method does not provide a predictive control, nor does it consider a sensor signal from the stage position sensor.
US20190355544 or US20190355545 disclose a multi-beam charged particle microscope with an adjustable projection system to compensate charging of a sample during scan. Therefore, the projection system is configured with fast, electrostatic elements to maintain a proper imaging of secondary charged particle beamlets from the sample to the detectors. Both references use an image detector to analyze the imaging quality of the secondary beamlets and compensate deteriorations due to sample charging in the secondary electron beam path. Both references describe methods and apparatuses for control of the secondary electron beam path, with secondary electron beamlets starting from the sample surface. However, it is a problem of the present disclosure that error sources are present also within the primary beam path, which are responsible for deteriorating the spot positions and spot shapes of the plurality of primary charged particle beamlets on the substrate surface. Furthermore, an additional source of error can be positioning errors or movement of the substrate table, leading to an aberration in the obtained digital image of the object without any deterioration of the primary of secondary beam path. These additional aberrations and errors can be variable over different time scales, for example slowly varying drift as for example due to thermal drift. Another example are rapidly varying dynamic aberrations such as for example due to acoustic vibrations. Those errors generally cannot be compensated with the secondary beam path alone.
The stage movement including acceleration, deceleration and ring-down of the stage can be a limiting factor for the throughput of the multi-beam inspection system. Acceleration and deceleration of the stage in short time typically use a complex and expensive stage.
In embodiments, the present disclosure seeks to provide a charged particle system and operation method of a charged particle system that allow high throughput examination of integrated semiconductor features with the resolution of at least the critical dimension during the development or during manufacturing or for reverse engineering of semiconductor devices. It is also possible to acquire high resolution images for a set of specific locations on a wafer, for example for so called process control monitors PCMs or relatively important areas only.
In embodiments, the disclosure seeks to provide one or more of the following. The disclosure seeks to provide a multi-beam charged particle inspection system with a mechanism to enable high precision and high-resolution image acquisition with high throughput and high reliability. The disclosure seeks to provide a multi-beam charged particle inspection system with a fast stage with a mechanism to maintain the lateral position and the focus points of the plurality of primary charged particle beamlets within the predetermined raster configuration within the predefined position accuracy even with a reduced time for precision alignment of the stage. The disclosure seeks to provide a multi-beam charged particle inspection system with a mechanism to maintain high resolution and high image contrast during image acquisition with high throughput and high reliability of a sequence of image patches. The disclosure seeks to provide a multi-beam charged particle inspection system with high throughput and high reliability with a stage which moves the wafer from a first inspection site to a second inspection site. The disclosure seeks to provide a multi-beam charged particle inspection system with a mechanism to compensate drifts of the predetermined primary and secondary charged particle beam paths as well as stage movements, for example parasitic stage movements.
In embodiments, the disclosure seeks to provide a multi-beam charged particle inspection system with a mechanism to enable high precision and high-resolution image acquisition with high throughput and high reliability with a stage of reduced technical complexity and reduced cost.
In embodiments, the disclosure seeks to provide a multi-beam charged particle inspection system for wafer inspection with a mechanism to enable high precision and high-resolution image acquisition with high reliability and high throughput.
In some embodiments, the disclosure provides a multi-beam charged particle microscope comprising a set of compensators for a compensation of a change of error amplitudes during an image acquisition of an image patch. The multi-beam charged particle microscope comprises a plurality of detectors or sensors to provide a plurality of sensor data and extract from the plurality of sensor data a set of actual error amplitudes of a predefined set of normalized error vectors. By deriving the normalized error vectors, contributions from different error sources can be separated. The different error sources are comprising error sources within the primary charged particle beam path, the secondary electron beam path and the position of the stage. The multi-beam charged particle microscope comprises a control unit, which derives a drive signal for driving the set of compensators to compensate the set of error amplitudes corresponding to a set of imaging aberrations and thereby keep the actual error amplitudes below a predetermined threshold during an image acquisition of a digital image of an image patch. From the normalized error vectors, which are representing contributions from the different error sources, drive signals of a set of compensators are derived, comprising at least one of a first compensator within the primary charged particle beam path and a second compensator within the secondary electron beam path. Further compensators can comprise a computational image postprocessing of the obtained digital image, or a compensator within the wafer stage.
In an example, the multi-beam charged particle microscope is configured to predict a change of at least one error amplitude of the set of error amplitudes and provide corresponding drive signals to the set of compensators accordingly. In an example, the plurality of sensor data includes data from stage position sensor or stage acceleration sensors. In an example, the set of compensators comprise a first and a second deflection system or deflection scanner of the multi-beam charged particle microscope. In a further example, the set of compensators comprise a third deflection system in a detection unit of the multi-beam charged particle microscope. In an example, the set of compensators further comprise at least a fast, electrostatic compensator or a multi-aperture active array element.
According to embodiments of the disclosure, a multi-beam charged particle inspection system is provided with a mechanism to enable high precision and high-resolution image acquisition with high throughput and high reliability. A wafer stage and a mechanism to control the wafer stage position are provided, wherein the wafer stage is configured to hold a sample such as a wafer and is movable in at least one of an x-direction, a y-direction or a z-direction. The stage typically comprises a stage motion controller, comprising a plurality of motors or actuators, which can be independently actuated or controlled. The motors or actuators can comprise at least one of a piezoelectric motor, piezoelectric actuator, or an ultrasonic piezomotor. It further comprises a position sensing system configured to determine a lateral and vertical displacement or rotation of the stage. The position sensing system is using any of a laser interferometer, a capacitive sensor, a confocal sensor array, a grating interferometer or a combination thereof.
The multi-beam charged particle inspection system can be provided with a mechanism to maintain the lateral positions of the focus points of the plurality of primary charged particle beamlets on a wafer surface and a mechanism to maintain the lateral positions of the focus points of the plurality of secondary electron beamlets, each within the predetermined raster configuration and each within the predefined position accuracy below a set of thresholds. Thereby, in an example, a reduced time for precision alignment of the stage is achieved. In a further example, throughput is further enhanced by overlapping the time intervals desired for image acquisition and wafer stage movement. The additional mechanism can comprise a first deflection unit for scanning deflection of the plurality of primary charged particle beamlets and at least a second deflection unit for scanning deflection of the plurality of secondary electron beamlets.
According to embodiments of the disclosure, a multi-beam charged particle inspection system is provided with a mechanism to maintain high resolution and high image contrast during image acquisition with high throughput and high reliability of a sequence of image patches. During a first and a second image acquisition, a plurality of sensor data is generated, including sensor data from an image sensor and a stage position sensor. The multi-beam charged particle inspection system comprises a control unit configured to generate a set of control signals from the plurality of sensor data. The set of control signals is provided to control modules to control a set of compensators. According to some embodiments of the disclosure, a multi-beam charged particle inspection system is provided with a mechanism to compensate drifts of the predetermined primary and secondary charged particle beam paths as well as stage movements.
According to an example, a multi-beam charged-particle beam system comprises a controller or control unit configured to apply a first signal to deflect a plurality of primary charged-particle beamlets incident on the sample to at least partly compensate for the lateral displacement of the stage; and apply a second signal to deflect a plurality of secondary electron beamlets to at least partially compensate the displacement of the plurality of secondary electron beamlets originating from the deflected primary charged-particle beamlet position on the sample. The first signal comprises an electrical signal affecting how the plurality of primary charged-particle beamlets is deflected in the at least one of X- or Y-axes. The controller is further configured to dynamically adjust at least one of the first signal or the second signal during scanning of the plurality of primary charged-particle beamlets on the sample. The controller is connected to a stage motion controller, and each of the plurality of motors is independently controlled to adjust a tilt of the stage, such that the stage is substantially perpendicular to an optical axis of the primary charged-particle beam. According to some embodiments of the disclosure, the multi-beam charged particle microscope system comprises a charged particle source configured to generate during use a first charged particle beam, and a multi beam generator configured to generate during use a plurality of primary charged particle beamlets from the incoming first charged particle beam, wherein each individual beamlet of the plurality of primary charged particle beamlets is spatially separated from all other beamlets of the plurality of charged particle beamlets. The multi-beam charged particle microscope system further comprises an object irradiation unit including an objective lens configured to focus incoming primary charged particle beamlets in an object plane, in which a wafer surface is provided, in a manner that a first image subfield in which a first individual primary beamlet of the plurality of charged particle beamlets impinges in the object plane is spatially separated from a second image subfield in which a second individual primary beamlet of the plurality of primary charged particle beamlets impinges in the object plane. The multi-beam charged particle microscope system further comprises a detection unit including a projection system and an image sensor comprising a plurality of individual detectors. The projection system is configured to image secondary electrons leaving the wafer in the first image subfield within the object plane due to impinging primary charged particles onto a first one, or a first group, of the plurality of individual detectors and to image secondary electrons leaving the wafer in the second image subfield in the object plane due to impinging primary charged particles onto a second one, or a second group, of the plurality of individual detectors.
In embodiments of the multi-beam charged particle microscope system comprises a subset of fast compensators providing a fast compensation of dynamic changes of error amplitudes. The subset of fast compensators comprises at least one of an electrostatic lens, electrostatic deflector, electrostatic stigmator, electrostatic micro-lens array, electrostatic stigmator array, or an electrostatic deflector array. With electrostatic elements such as electrostatic deflectors and/or electrostatic stigmators, it is possible that there are no eddy currents, no inductivity and adjustment times in the range of below 10 μs for compensation of a dynamic change of an error amplitude.
The subcomponent providing fast compensation of dynamic changes can provide an adjustment frequency that is comparable to the scanning frequency with which the primary charged particle beamlets are scanned, i.e. the fast compensation of dynamic changes can be performed several times, i.e. more than once, while an image acquisition of an image patch on the wafer surface is performed with the plurality of primary charged particle beamlets. Typical line scanning frequencies are in the order of 1 kHz to 5 kHz, the frequency bandwidth of an electrical driving signals of a dynamic compensation element can be within a range of 0.1 kHz and 10 kHz, thus providing for example a compensation between every 50th scanning line or 10 times every single scanning line.
In some embodiments, the multi-beam charged particle microscope system comprises a subset of slowly acting compensators providing a compensation of a slow change or drift of error amplitudes. The subset of slowly acting compensators comprises at least one of a magnetic lens, or a magnetic deflector, a magnetic stigmator or a magnetic beam splitter.
In some embodiments, a multi-beam charged particle microscope for wafer inspection is provided. The multi-beam charged particle microscope for wafer inspection comprises a charged-particle multi-beamlet generator for generating a plurality of primary charged particle beamlets and an object irradiation unit comprising a first deflection system for scanning an area of a wafer surface arranged in an object plane with the plurality of primary charged particle beamlets for the generation of a plurality of secondary electron beamlets emitting from the wafer surface. The multi-beam charged particle microscope for wafer inspection further comprises a detection unit with a projection system, a second deflection system and an image sensor for imaging the plurality of secondary electron beamlets onto the image sensor, and for acquisition during use a digital image of a first image patch of the wafer surface. The multi-beam charged particle microscope for wafer inspection further comprises a sample stage with a stage position sensor for positioning and holding the wafer surface in the object plane during the acquisition of the digital image of the first image patch. The first deflection system scans the plurality of the primary charged particle beamlets along predetermined scan paths over the wafer surface while the wafer is held by the wafer stage, and the second deflection unit scans the plurality of secondary electron beamlets along predetermined scan paths in order to keep the image points of the plurality of secondary electron beamlets fixed and constant at the image sensor of the detection unit. The multi-beam charged particle microscope for wafer inspection further comprises a control unit and a plurality of detectors comprising the stage position sensor and the image sensor, configured to generate during use a plurality of sensor data, the sensor data including position and orientation data of the sample stage. The multi-beam charged particle microscope for wafer inspection further comprises a set of compensators comprising at least the first and the second deflection system. The control unit is configured to generate a set of P control signals Cp from the plurality of sensor data to control the set of compensators during the acquisition of the digital image of the first image patch. The set of compensators can further comprise at least one of the compensators of the charged-particle multi-beamlet generator and a compensator of the detection unit. In an example, the control unit comprises a sensor data analysis system configured to analyze during use the plurality of sensor data and to compute during use a set of K amplitudes Ak of K error vectors. In some embodiments, the control unit further comprises an image data acquisition unit which is configured to reduce during use the image sensor data from the image sensor to an image sensor data fraction representing less than 10%, such as less than 2% of the image sensor data and to provide the image sensor data fraction to the sensor data analysis system. In an example, the image sensor data fraction comprises digital image data of a plurality of secondary electron beamlets at a reduced sampling rate. In an example, the image sensor data fraction comprises digital image data of a reduced set of secondary electron beamlets (9).
In an example, the sensor data analysis system is further configured to derive or predict a temporal development of at least one amplitude An of the set of amplitudes Ak of error vectors.
In an example, the control unit further comprises a control operation processor for computing the set of control signals Cp from the set of amplitudes Ak of error vectors. In an example, the extraction of at least one of the plurality or set of control signals is further based on a predictive model of an actuation output of the stage.
In an example, the sensor data analysis system is configured to derive a sensor data vector DV of length L from the plurality of sensor data, with L>=K.
In an example, the control unit is configured to compensate a change of a position or an orientation of the sample stage by computing and providing at least one of the control signals of the first set of control signals Cp to the first and the second deflection units. A change of a position or an orientation of the sample stage is given by a lateral displacement of the stage, corresponding to a difference between a current position and rotation of the stage and a target position and rotation of the stage in the at least one of X-Y axes.
The control unit can be configured to derive from the plurality of sensor data a driving signal for the first compensator in the object irradiation unit to achieve an additional displacement of the scanning spot positions of the plurality of primary charged particle beamlets synchronized with a lateral displacement of the wafer surface. In an example, the additional displacement comprises a rotation of the raster configuration of the plurality of primary charged particle beamlets. The control unit can be further configured to compensate the additional displacement of the spot positions on the displaced wafer surface by the second compensator in the projection system, wherein the second compensator in the projection system is configured to operate synchronized with the first compensator in the object irradiation unit, thereby keeping constant the spot positions of the plurality of secondary electron beamlets on the image detector. In an example, the first compensator in the object irradiation unit is the first deflection system, and the control unit is configured to compensate a displacement or a rotation of the sample stage by computing and providing a control signal for an additional displacement or rotation of the scanning spot positions of the plurality of primary charged particle beamlets to the first deflection system. In an example, the second compensator the projection system is the second deflection system, and the control unit is configured to compensate the additional displacement or rotation of the scanning spot positions of the plurality of primary charged particle beamlets on the displaced wafer surface by computing and providing a control signal to the second deflection system. Thereby, the spot positions of the secondary electron beamlets are kept constant at an image sensor irrespective of the modified scan path according a displacement or movement of the wafer stage.
In some embodiments, the charged-particle multi-beamlet generator of the multi-beam charged particle microscope further comprises a fast compensator, and the control unit is configured to compensate a rotation of the sample stage by computing and providing at least one of the control signals of the first set of control signals Cp to the fast compensator to induce a rotation of the plurality of primary charged particle beamlets. In some embodiments, the control unit of the multi-beam charged particle microscope is further configured to generate a third control signal for moving the wafer surface by the wafer stage to a second center position of a second image patch in the object plane for image acquisition of a digital image of a second image patch. In some embodiments, the control unit is further configured to compute a second set of P control signals Cp from the plurality of sensor data to control the set of compensators during the time interval Tr of movement of the wafer stage to the second center position of the second image patch. In some embodiments, the control unit is further configured to compute a start time of the image acquisition of the second image patch during time interval Tr and to start the image acquisition of the second image patch during a deceleration time interval Td of the wafer stage, and wherein the control unit is further configured to provide at least an offset signal of a predicted offset position of the wafer stage during time interval Td to the first and second deflection systems.
In some embodiments, a method of wafer inspection with a multi-beam charged particle microscope is provided. The multi-beam charged particle microscope of the method comprises a plurality of detectors comprising an image sensor and a stage position sensor, and a set of compensators comprising at least a first and a second deflection system. The method comprises the steps of
In some embodiments, the method of wafer inspection further comprises the step (g) of deriving a sensor data vector DV of length L from the plurality of sensor data, with L>=K.
In some embodiments, the method of wafer inspection further comprises the step (h) of deriving a temporal development of at least one amplitude An of the set of amplitudes Ak of error vectors. In some embodiments, the method of wafer inspection further comprises the step (i) of compensating a change of a position or an orientation of the sample stage by providing control signals Cp to the first and the second deflection unit. In some embodiments, the method of wafer inspection further comprises the step (j) of deriving a second set of control signals Cp from the set of error amplitudes Ak and providing the second set of control signals during step a) of positioning and aligning a wafer surface of the wafer.
In some embodiments of the disclosure, a charged particle microscope and a method of operating a charged particle microscope with high throughput and high resolution according to desired imaging properties of a wafer inspection task is provided, wherein a sequence of image patches is imaged in a sequence of image acquisition steps, comprising a first image acquisition of a first image patch in a first time interval Ts1 and a second image acquisition of a second image patch in a second time interval Ts2, and further comprising a third time interval Tr for moving a sample stage from a first center position of the first image patch to a second center position of the second image patch, such that at least one of the first and second time interval Ts1 or Ts2 has an overlap with the third time interval Tr. The total time interval from start of the first time interval Ts1 to the end of the second time interval Ts2 is shorter than the sum of the three time intervals Ts1, Tr and Ts2 and a fast wafer inspection with high throughput is achieved. In an example, the second image acquisition of the second image patch is initiated before the end of the third time interval Tr, when the sample stage has completely stopped. In an example, the third time interval Tr of sample movement is initiated before the end of the time interval Ts1, when the image acquisition of the first image patch is finalized. In an example of the method, the computation of a start time of the third time interval Tr of sample movement is performed during the first time interval Ts1 of image acquisition of the first image patch, such that a position deviation of the first center position of the first image patch from a line of sight of the multi-beam charged particle microscope or a movement velocity of the sample stage are below a predetermined threshold. In an example of the method, the computation of a start time of the second time interval Ts2 of the second image acquisition is performed during the time interval Tr of sample stage movement, such that a position deviation of the second center position of the second image patch from a line of sight of the multi-beam charged particle microscope or a movement velocity of the sample stage are below a predetermined threshold.
In an example of the method of operating a multi-beam charged particle microscope, the method comprises the further steps of
In an example, a charged particle microscope comprises a control unit which is configured to compute a start time of sample stage movement from a first to a second image patch during a first image acquisition of the first image patch. In an example of the disclosure, a charged particle microscope comprises a control unit which is configured to compute a start time of a second image acquisition of a second image patch during a sample stage movement from a first image patch to the second image patch.
In some embodiments, a method of operating a multi-beam charged particle microscope configured for wafer inspection is described, comprising the preparatory steps of
In an example, the set of compensators comprise a first deflection unit of the multi-beam charged particle microscope for scanning and deflecting the plurality of primary charged particles and a second deflection unit for scanning and deflecting the plurality of secondary electrons generated during use of the multi-beam charged particle microscope.
The sensitivity matrix can be analyzed for example by singular value decomposition or similar algorithms. In an example, the sensitivity matrix is decomposed by splitting the into two, three or more kernels or independent subsets of image qualities. Thereby, complexity of computation is reduced, and nonlinear effects or higher order effects are reduced.
During use, for example during a wafer inspection, the method of operation can comprise using the normalized error vectors, normalized drive signals and the set of thresholds, which are stored in a memory of a control unit of the multi-beam charged particle microscope. A method of operating the multi-beam charged particle microscope comprises
In an example, the plurality of sensor data comprises at least one of a position or speed information of the actual position and actual velocity of a wafer stage for holding a wafer during inspection with the multi-beam charged particle microscope. The set of actual amplitudes of normalized error vectors from the sensor data vector represent an actual state of the set of image qualities of the multi-beam charged particle microscope. By comparison to predetermined and stored thresholds, a set of control signals is derived. From the control signals, a set of actual drive signals is computed, for example by multiplication of a control signals with the predetermined set of normalized drive signals. During an image scan or an image acquisition of at least one image patch, the set of actual drive signals is provided to the set of compensators, thereby reducing during operation of the multi-beam charged particle microscope the subset of actual amplitudes below the subset of predetermined thresholds, stored in the memory of the control unit. The method steps are repeated at least twice, at least ten times, for example every scanning line during acquisition of each image patch.
In an example, the method further comprises the step of predicting during a wafer inspection a subset of development amplitudes of at least a subset of the set of actual amplitudes according an expected development of the multi-beam charged particle microscope in a prediction time interval. The method can further comprise a step of recording during use at least a subset of the set of actual amplitudes of the multi-beam charged particle microscope for generating a history of the subset of the set of actual amplitudes. The method of operating the multi-beam charged particle microscope con further comprise the step of deriving during a wafer inspection a set of predictive control signals from the set of development amplitudes and a set of predictive drive signals from the set of predictive control signals, and step of providing during a wafer inspection the set of predictive drive signals to the set of compensators in time sequential manner, thereby reducing during operation of the multi-beam charged particle microscope in the prediction time interval the subset of actual amplitudes below the set of thresholds.
The expected development of the multi-beam charged particle microscope in the prediction time interval can be determined according to one of a prediction model function or a linear, second order or higher order extrapolation of the history of a set of actual amplitudes. In an example, the method further comprises the step of recording during use at least a subset of the set of actual amplitudes of the multi-beam charged particle microscope for generating a history of the subset of the set of actual amplitudes. The method can further comprise the step of deriving during a wafer inspection a set of predictive control signals from the set of development amplitudes and a set of predictive drive signals from the set of predictive control signals, and step of providing during a wafer inspection the set of predictive drive signals to the set of compensators in time sequential manner, thereby reducing during operation of the multi-beam charged particle microscope in the prediction time interval the subset of actual amplitudes below the subset of thresholds. Embodiments include a multi-beam charged particle microscope configured to apply during use the method steps described above.
In some embodiments, the error amplitudes derived from the sensor data are representing image performance specification of a wafer inspection task, such as at least one of a relative position and orientation of the wafer stage with respect to the line of sight of the multi-beam charged particle microscope and an image coordinate system of the multi-beam charged particle microscope, a magnification or pitch of the multi-beam charged particle microscope, a telecentricity condition, a contrast condition, an absolute position accuracy of the plurality of charged particle beamlets, and higher order aberrations such as distortion of the plurality of charged particle beamlets, astigmatism and chromatic aberrations.
In some embodiments, a multi-beam charged particle microscope and a software code is disclosed. A multi-beam charged particle microscope comprises a set of compensators including deflectors, a control unit and software code installed, configured for application of any of the methods according any of the method steps described above.
In some embodiments, a non-transitory computer readable medium is disclosed, comprising a set of instructions that is executable by one or more processors of a multi-beam charged particle apparatus to cause the apparatus to perform a method, wherein the apparatus includes a charged-particle source to generate a plurality of primary charged-particle beamlets and the method comprising:
More details will be disclosed with reference to the attached drawings.
In the exemplary embodiments described below, components similar in function and structure are indicated as far as possible by similar or identical reference numerals.
The schematic representation of
The microscopy system 1 comprises an object irradiation unit 100 and a detection unit 200 and a beam splitter unit 400 for separating the secondary charged-particle beam path 11 from the primary charged-particle beam path 13. Object irradiation unit 100 comprises a charged-particle multi-beamlet generator 300 for generating the plurality of primary charged-particle beamlets 3 and is adapted to focus the primary charged-particle beamlets 3 in the object plane 101, in which the surface 25 of a wafer 7 is placed by a sample stage 500. The sample stage 500 comprises a stage motion controller, wherein the stage motion controller comprises a plurality of motors configured to be independently controlled by control signals. The stage motion controller is connected to a control unit 800.
The primary beamlet generator 300 produces a plurality of primary charged particle beamlet spots 311 in an intermediate image plane 321, which is typically a spherically curved surface to compensate a field curvature of the object irradiation unit 100. The primary beamlet generator 300 comprises a source 301 of primary charged particles, for example electrons. The primary charged particle source 301, for example, emits a diverging primary charged particle beam 309, which is collimated by collimating lenses 303.1 and 303.2 to form a collimated beam. The collimating lenses 303.1 and 303.2 are usually consisting of one or more electrostatic or magnetic lenses, or by a combination of electrostatic and magnetic lenses. The collimated primary charged particle beam is incident on the primary multi-beamlet-forming unit 305. The multi-beamlet forming unit 305 basically comprises a first multi-aperture plate 306.1 illuminated by the primary charged particle beam 309. The first multi-aperture plate 306.1 comprises a plurality of apertures in a raster configuration for generation of the plurality of primary charged particle beamlets 3, which are generated by transmission of the collimated primary charged particle beam 309 through the plurality of apertures. The multi-beamlet forming unit 305 comprises at least a further multi-aperture plates 306.2 located, with respect to the direction of movement of the electrons in beam 309, downstream of the first multi-aperture plate 306.1. For example, a second multi-aperture plate 306.2 has the function of a micro lens array and can be set to a defined potential so that a focus position of the plurality of primary beamlets 3 in intermediate image plane 321 is adjusted. A third, active multi-aperture plate arrangement 306.3 (not illustrated) comprises individual electrostatic elements for each of the plurality of apertures to influence each of the plurality of beamlets individually. The active multi-aperture plate arrangement 306.3 consists of one or more multi-aperture plates with electrostatic elements such as circular electrodes for micro lenses, multi-pole electrodes or sequences of multipole electrodes to form deflector arrays, micro lens arrays or stigmator arrays. The multi-beamlet forming unit 305 is configured with an adjacent first electrostatic field lenses 307, and together with a second field lens 308 and the second multi-aperture plate 306.2, the plurality of primary charged particle beamlets 3 is focused in or in proximity of the intermediate image plane 321.
In or in proximity of the intermediate image plane 321, a beam steering multi aperture plate 390 is arranged with a plurality of apertures with electrostatic elements, for example deflectors, to manipulate individually each of the plurality of charged particle beamlets 3. The apertures of the beam steering multi aperture plate 390 are configured with larger diameter to allow the passage of the plurality of primary charged particle beamlets 3 even in case the focus spots of the primary charged particle beamlets 3 deviate from their design position.
The plurality of focus points of primary charged particle beamlets 3 passing the intermediate image plane 321 is imaged by field lens group 103.1 and 103.2 and objective lens 102 in the image plane 101, in which the investigated surface of the wafer 7 is positioned by an object mount on sample stage 500. The object irradiation system 100 further comprises a deflection system 110 in proximity to a first beam cross over 108 by which the plurality of charged-particle beamlets 3 can be deflected in a direction perpendicular to the direction of beam propagation direction (here the z-direction).
Deflection system 110 is connected to control unit 800. Objective lens 102 and deflection system 110 are centered at an optical axis 105 of the multi-beamlet charged-particle microscopy system 1, which is perpendicular to wafer surface 25. The wafer surface 25 arranged in the image plane 101 is then raster scanned with deflection system 110. Thereby the plurality of primary charged particle beamlets 3, forming the plurality of beam spots 5 arranged in the raster configuration, is scanned synchronously over the wafer surface 101. In an example, the raster configuration of the focus spots 5 of the plurality of primary charged particle 3 is a hexagonal raster of about hundred or more primary charged particle beamlets 3. The primary beam spots 5 have a distance about 6 μm to 15 μm and a diameter of below 5 nm, for example 3 nm, 2 nm or even below. In an example, the beam spot size is about 1.5 nm, and the distance between two adjacent beam spots is 8 μm. At each scan position of each of the plurality of primary beam spots 5, a plurality of secondary electrons is generated, respectively, forming the plurality of secondary electron beamlets 9 in the same raster configuration as the primary beam spots 5. The plurality or intensity of secondary charged particles generated at each beam spot 5 depends on the intensity of the impinging primary charged particle beamlet, illuminating the corresponding spot, the material composition and topography of the object under the beam spot. Secondary charged particle beamlets 9 are accelerated by an electrostatic field generated by a sample charging unit 503, and collected by objective lens 102, directed by beam splitter 400 to the detection unit 200. Detection unit 200 images the secondary electron beamlets 9 onto the image sensor 207 to form there a plurality of secondary charged particle image spots 15. The detector comprises a plurality of detector pixels or individual detectors. For each of the plurality of secondary charged particle beam spots 15, the intensity is detected separately, and the material composition of the wafer surface is detected with high resolution for a large image patch with high throughput. For example, with a raster of 10×10 beamlets with 8 μm pitch, an image patch of approximately 88 μm×88 μm is generated with one image scan with deflection system 110, with an image resolution of for example 2 nm. The image patch is sampled with half of the beam spot size of for example 2 nm, thus with a pixel number of 8000 pixels per image line for each beamlet, such that the image patch generated by 100 beamlets comprises 6.4 gigapixel. The image data is collected by control unit 800. Details of the image data collection and processing, using for example parallel processing, are described in German patent application 102019000470.1, which is hereby incorporated by reference and in U.S. Pat. No. 9,536,702, mentioned above.
The plurality of secondary electron beamlets 9 passes the first deflection system 110 and is scanning deflected by the first scanning system 110 and guided by beam splitter unit 400 to follow the secondary beam path 11 of the detection unit 200. The plurality of secondary electron beamlets 9 are travelling in opposite direction from the primary charged particle beamlets 3, and the beam splitter unit 400 is configured to separate the secondary beam path 11 from the primary beam path 13 usually via magnetic fields or a combination of magnetic and electrostatic fields. Optionally, additional magnetic correction elements 420 are present in the primary as well as in the secondary beam paths. Projection system 205 further comprises at least a second deflection system 222, which is connected to projection system control unit 820. Control unit 800 is configured to compensate a residual difference in position of the plurality of focus points 15 of the plurality of secondary electron beamlets 9, such that the position of the plurality secondary electron focus spots 15 are kept constant at image sensor 207.
The projection system 205 of detection unit 200 comprises at least a second cross over 212 of the plurality of secondary electron beamlets 9, in which an aperture 214 is located. In an example, the aperture 214 further comprises a detector (not shown), which is connected to projection system control unit 820. Projection system control unit 820 is further connected to at least one electrostatic lens 206 of projection system 205, which comprises further electrostatic or magnetic lenses 208, 209, 210, and is further connected to a third deflection unit 218. The projection system 205 further comprises at least a first multi-aperture corrector 220, with apertures and electrodes for individual influencing each of the plurality of secondary electron beamlets 9, and an optional further active element 216, connected to control unit 800.
The image sensor 207 is configured by an array of sensing areas in a pattern compatible to the raster arrangement of the secondary electron beamlets 9 focused by the projecting lens 205 onto the image sensor 207. This enables a detection of each individual secondary electron beamlet 9 independent of the other secondary electron beamlets 9 incident on the image sensor 207. A plurality of electrical signals is created and converted in digital image data and processed to control unit 800. During an image scan, the control unit 800 is configured to trigger the image sensor 207 to detect in predetermined time intervals a plurality of timely resolved intensity signals from the plurality of secondary electron beamlets 9, and the digital image of an image patch is accumulated and stitched together from all scan positions of the plurality of primary charged particle beamlets 3.
The image sensor 207 illustrated in
In the illustrated in the example, the primary charged particle source is implemented in form of an electron source 301 featuring an emitter tip and an extraction electrode. When using primary charged particles other than electrons, like for example helium ions, the configuration of the primary charged-particle source 301 may be different to that shown. Primary charged-particle source 301 and active multi-aperture plate arrangement 306.1 . . . 306.3 and beam steering multi aperture plate 390 are controlled by primary beamlet control module 830, which is connected to control unit 800.
During an acquisition of an image patch by scanning the plurality of primary charged particle beamlets 3, the stage 500 is optionally not moved, and after the acquisition of an image patch, the stage 500 is moved to the next image patch to be acquired. Stage movement and stage position is monitored and controlled by sensors known in the art, such as Laser interferometers, grating interferometers, confocal micro lens arrays, or similar. For example, a position sensing system determines the lateral and vertical displacement and rotation of the stage using any of a laser interferometer, a capacitive sensor, a confocal sensor array, a grating interferometer or a combination thereof. As will be shown below in some embodiments of the disclosure, the movement of stage 500 from a first to a next image patch overlaps with the acquisition of an image patch and throughput is increased.
Some embodiments of the method of wafer inspection by acquisition of image patches is explained in more detail in
The plurality of primary beamlets is distributed in a regular raster configuration 41 in each image patch and is scanned by a scanning mechanism to generate a digital image of the image patch. In this example, the plurality of primary charged particle beamlets 3 is arranged in a rectangular raster configuration 41 with n primary beam spots 5.11, 5.12 to 5.1N in the first line with N beam spots, and M lines with beam spots 5.11 to beam spot 5.MN. Only M=five times N=five beam spots are illustrated for simplicity, but the number of beam spots M times N can be larger, and the plurality of beam spots 5.11 to 5.MN can have different raster configurations 41 such as a hexagonal or a circular raster.
Each of the primary charged particle beamlet is scanned over the wafer surface 25, as illustrated at the example of primary charged particle beamlet with beam spot 5.11 to 5.MN with scan path 27.11 to scan path 27.MN of the plurality of primary charged particle beamlets. Scanning of each of the plurality of primary charged particles is performed for example in a back-and forth movement with scan paths 27.11 . . . 27.MN, and each focus point 5.11 . . . 5.MN of each primary charged particle beamlet is moved by scanning deflector 110 in x-direction from a start position of an image line, which is in the example the most left image point of for example image subfield 31.mn. Each focus point is then scanned by scanning the primary charged particle beamlet to the right position, and then the scanning deflector 110 moves each of the plurality of charged particle beamlets in parallel to line start positions of the next lines in each respective subfield 31.11 . . . 31.MN. The movement back to line start position of a subsequent scanning line is called flyback. The plurality of primary charged particle beamlets follow in parallel scan paths 27.11 to 27.MN, and thereby a plurality scanning images of the respective subfields 31.11 to 31.MN is obtained in parallel. For the image acquisition, as described above, a plurality of secondary electrons is emitted at the focus points 5.11 to 5.MN, and a plurality of secondary electron beamlets 9 is generated. The plurality of secondary electron beamlets 9 are collected by the objective lens 102, pass the first deflection system 110 and are guided to the detection unit 200 and detected by image sensor 207. A sequential stream of data of each of the plurality of secondary electron beamlets 9 is transformed synchronously with the scanning paths 27.11 . . . 27.MN in a plurality of 2D dataset, forming the digital image data of each subfield. According a preselected scan program, the plurality of primary charged particle beamlets follow predetermined scan paths 27.11 to 27.MN. The plurality of digital images of the plurality of subfields is finally stitched together by an image stitching unit to form the digital image of the first image patch 17.1. Each image subfield is configured with small overlap area with adjacent image subfield, as illustrated by overlap area 39 of subfield 31.mn and subfield 31.m(n+1). Known pitches between the plurality of primary charged particle beam spots 5.11 to 5.MN are typically varying due to drifts, lens distortions and other aberrations. Therefore, the overlap areas 39 of in known technology are typically configured large enough to cover the entire image patch with one image scan, irrespective of fluctuations of the beam spot positions.
In some embodiments of the method of wafer inspection, the throughput of a multi-beam charged particle microscopy system for wafer inspection is increased by reduction of the size of the overlap areas 39. Thereby the size of each image patch is increased, and the throughput is increased. In an example, the beam pitch of the focus points 5 of the plurality of primary charged particle beamlets is 10 μm. If the width of each overlap area 39 of 200 nm is reduced for example by 25%, the image patch size is increased by approximately 1% and the throughput is increased by approximately 1%. With an even further reduction by 65% of the width of the overlap areas, throughput is increased by 2.5%. The reduction of the overlap areas 39 is achieved by a control of the pitches of the plurality of primary charged particle beamlets 3. With a compensator such as an active multi aperture plate 306.3 of
Under high image repeatability it is understood that under repeated image acquisition of the same area, a first and a second, repeated digital image are generated, and that the difference between the first and second, repeated digital image is below a predetermined threshold. For example, the difference in image distortion between first and second, repeated digital image is desirably below 1 nm, such as below 0.5 nm, and the image contrast difference is desirably below 10%. In this way a similar image result is obtained even by repetition of imaging operations. This is important for example for an image acquisition and comparison of similar semiconductor structures in different wafer dies or for comparison of obtained images to representative images obtained from an image simulation from CAD data or from a database or reference images.
One of the desired properties or specifications of a wafer inspection task is throughput. The throughput depends on several parameters, for example speed of the sample stage, the time used for accelerating and decelerating the stage, and the number of iterations used for alignment of the stage at each new measurement site, as well as the measured area per acquisition time itself. An example of enhancement of throughput by increasing the image patch size by reduction of overlap areas is illustrated above. The measured area per acquisition time is determined by the dwell time, resolution and the number of beamlets. Typical examples of dwell times are between 20 ns and 80 ns. The pixel rate at the fast image sensor 207 is therefore in a range between 12 Mhz and 50 MHz and each minute, about 20 image patches or frames could be obtained. However, between the acquisition of two image patches, the wafer is laterally moved to the next point of interest by the wafer stage. In an example, the time interval Tr for movement of the wafer from a first image patch to a second image patch is about 1 second, and the frame rate is reduced to about 15 frames per minute. A typical time interval Tr for movement of the wafer with a standard stage from a first image patch to a second image patch, including a time interval for precision adjustment at the second image patch exceeds is and can be in the order of 3 s or even more, for example 5s. For 100 beamlets, typical examples of throughput in a high-resolution mode with a pixel size of 0.5 nm is about 0.045 sqmm/min (square-millimeter per minute), and with larger number of beamlets and lower resolution, for example 10000 beamlets and 25 ns dwell time, a throughput of more than 7 sqmm/min is possible. The stage movement including acceleration and deceleration of the stage is one of the limiting factors for the throughput of the multi-beam inspection system. A faster acceleration and deceleration of the stage in short time typically involve a complex and expensive stage or induces dynamical vibrations in the multi-beam charged particle system. The embodiments of the disclosure enable the high throughput of a wafer inspection task while maintaining the image performance specification well within the desired properties as for example described above.
Typically, fast and high throughput image acquisition without control is deteriorated due to drifts and dynamic effects including residual and unwanted stage movements. In general, deviations from ideal image acquisition conditions are described by error functions. An example of an error function in which the plurality of image spots 5 is rotated and displaced with respect to the wafer 7 is illustrated in
A local wafer coordinate system 551 is defined at the inspection site of the wafer with local wafer coordinates xl and yl. In a real imaging situation, the local wafer coordinate system 551 deviates from the image coordinate system 51 with the line of sight 53. The displacement vector 55 for example arises from a misalignment of the wafer stage, a drift of the wafer stage or a drift of the image coordinate system 51 or both. In a real imaging situation, the deviation of the local wafer coordinate system 551 changes over time, including over the image acquisition time of one image scan. Displacement vector 55 is in general described as a time dependent vector D(t)=[Dx, Dy, Dz] (t). In a real imaging situation, the displacement vector 55 comprises a difference of the deviation of the line of sight 53 and the drift of the wafer stage 500, both changing independently over time, including over the image acquisition time of one image scan of each image patch 17.1 . . . k.
Image coordinate system 51 can be rotated relative to local wafer coordinate system 551 by rotation angle Rz, indicated by arrow 57, around the z-axis or the line of sight 53, and the image of the image patch 17 from wafer surface 25 is obtained in rotated image coordinate system 59 with coordinates (xi′, yi′). Rotation angles can occur at any axis and can be time dependent to form rotation angle vector R(t)=[Rx, Ry, Rz](t). By rotation around z-axis, all image spots 5 are rotated to image spots 5′ (the spots indicated), illustrated by displacement vectors 61 between unrotated image spots 5 and rotated image spots 5′. The deviation by image rotation arises either by a rotation of the image spots 5 or by a rotation of the stage around the vertical or z-axis, or both.
The multi-beamlet charged-particle microscopy system according the embodiments of the disclosure comprises several sensors which provide sensors signals during image acquisition. Sensors are for example a stage position sensor of stage 500, sensors arranged at apertures such as aperture 214, or the image sensor 207. The control unit 800 is configured to extract error functions from the sensor signals, such as image displacement vector D(t), image rotation R(t), including a change of focus position or an image plane tilt. In general, control unit 800 is configured to analyze sensor signals and decompose the sensor signals into a set of individual model error functions by known methods in the art, for example by a fit operation of a set of predefined model error functions with error amplitudes to the sensor data. Such a fit operation can for example be a least-square fitting operation or a singular-value decomposition, and a plurality of error amplitudes for each model error function of the set of model error functions is computed. By computation of error amplitudes, the data amount for control of the plurality of primary and secondary charged particle beamlets 3 and 9 and stage 500 is significantly reduced to for example six error amplitudes. However, in some embodiments of the disclosure, a larger number of error amplitudes such as magnification error, different higher order distortions and individual field dependent image aberration patterns are considered in the same way. The normalized error amplitudes can describe for example a displacement of a line of sight in both lateral directions, a displacement of a wafer stage in both lateral and axial directions, rotation of a wafer stage, rotation of a line of sight, a magnification error, a focus error, an astigmatism error, or a distortion error. By decomposition of the sensor signals in a limited set of error amplitudes, speed of computation and control of correction signals is significantly improved.
In an example of the embodiments, control unit 800 is configured to analyze the development of error amplitudes over time. A history of the change of error amplitudes over time is recorded and the control unit is configured to expand the change of error amplitudes into time dependent model functions. Control unit 800 is configured to predict a change of at least a subset of error amplitudes for a short period of time, for example during a fraction of an image scan of scan time interval Ts. Scan time interval Ts of an image patch is between 1 seconds and 5 seconds, depending on the dwell time. In a typical example, the scan time interval of an image patch Ts is about 3 seconds. In an example, a slow variation of the predicted change of error amplitudes, generally called the drift, is separated from a fast, dynamic variation of the predicted development of error amplitudes, generally called the dynamic change. In an example, control unit 800 is configured to predict a change of at least a subset of error amplitudes during a time interval Tr in which the stage moves from the first to a second image patch. The time interval Tr in which the stage moves from the first to a second image patch is between 0.5 seconds and 5 seconds. In an example, control unit 800 is configured to predict a change of at least a subset of error amplitudes during a time Td in which the stage deaccelerates from a fast movement to a stop position. In general, control unit 800 is configured for the extraction of at least one of the plurality of control signals, based on a predictive model of an actuation output of the stage.
In an example of the embodiments, the development of error amplitudes for the slow varying part, the drift, and for the dynamic varying part or dynamic change of error amplitudes, are extrapolated separately. The drift part, for example, typically shows a linear behavior or asymptotic behavior. For example, thermal effects typically lead to a slow drift with an asymptotic behavior. With a prior knowledge of the development of error amplitudes of time, a development of the drift is derived based on a model function with predetermined asymptotic behavior and the control unit 800 is configured to generate control signals in expectation of predicted error amplitudes. Slowly varying developments or drift of error amplitudes are separated from fast developments, and the drifts of error amplitudes are for example directly forwarded to control the stage 500.
In an example, the prediction of the development of the first error amplitude is generated according a prediction model or an extrapolation.
In an example, a control signal is provided to control units of the multi-beam charged particle microscope for keeping the predicted development of an error amplitude below the predetermined threshold also during an image scan of time interval Ts1 or Ts2. For example, if a slow drift of an image coordinate system is predicted, the drift of image coordinate system can be compensated by a slow compensating movement of stage 500 such that Sn(t) is controlled during image acquisition well below threshold Sn_max.
The dynamic change Nn(t) shows a simplified periodical behavior with a half period smaller than one scan time interval Ts1 or Ts2 of one image patch. In some embodiments of the disclosure, the control unit 800 is configured to derive the dynamic change of error amplitude Nn(t) and to determine a control signal for fast active elements of the multi-beam charged particle microscope 1 with high speed. Such active elements are for example the electrostatic beam deflection scanners or electrostatic correctors, which can be adjusted with high speed. During an image scan of a first image patch with scan time Ts, the uncontrolled error amplitude Nn(t) exceeds at least two times tc1 and tc2 a predetermined error amplitude window DNn, indicated by reference number 905. The error amplitude window 905 with an upper and a lower threshold for the error amplitude Nn(t) represents the specification properties for the image quality parameter represented by error amplitude Nn(t). Control unit 800 is further configured to provide the dynamic control signals to control units of the fast active elements, such that the corrected dynamic deviation or error amplitude Nn(t), illustrated in
It should be noted that depending on the frequency response of the control loop of the control operator 800, the frequency of the corrected error amplitude Nn(t) illustrated in
In an example, control unit 800 is configured to predict the dynamic change of the error amplitude Nn(t). For example, by derivation of local gradient 909 at time Ta of the error amplitude Nn(t), control unit 800 is configured to derive control signals for fast active elements for dynamic control during an image scan of time interval Ts1.
A driving error source of misalignment or drift of the wafer stage is the time interval Tr provided to move the stage from a first image patch 17.1 to a second image patch 17.2. Especially, a misalignment or drift of the wafer stage depends on the number of adjustment iterations and the time Td used to decelerate the stage from a movement velocity to stop position in proximity of the second image patch 17.2. In some embodiments of the disclosure, the time gap between to image acquisition steps of a first image patch 17.1 and a second image patch 17.2 is significantly reduced and throughput is increased. By the embodiment of the disclosure, a charged particle microscope and a method of operating a charged particle microscope is provided, in with a sequence of image patches is imaged in a sequence of image acquisition steps, comprising a first image acquisition of a first image patch 17.1 in a first time interval Ts1 and a second image acquisition of a second image patch 17.2 in a second time interval Ts2, and further comprising a third time interval Tr for moving the wafer stage 500 from a first center position 21.1 of the first image patch 17.1 to a second center position 21.2 of the second image patch 17.2, such that at least one of the first and second time interval Ts1 or Ts2 has an overlap with the third time interval Tr. The total time interval from start of the first time interval Ts1 to the end of the second time interval Ts2 is shorter than the sum of the three time intervals Ts1, Tr and Ts2 and the throughput is increased and a fast inspection mode is achieved.
The development or separation of error amplitudes into drift and dynamic change is achieved for example by a Fast Fourier analysis or a moving average computation method. Other methods known in the art are possible. In an example, a predetermined threshold for a maximum gradient of a change of an error amplitude is applied, and a decomposition into the linear drift with maximum gradient and a residual dynamic change with the error amplitude part exceeding the maximum gradient is obtained. A linear part of an error amplitude below the maximum gradient is subtracted, and the dynamic change is obtained by the development of error amplitudes subtracted by the linear drift. The maximum gradient of error amplitude is determined according a maximum speed of a compensator to compensate the linear drift. Such slowly acting compensators can for example be magnetic elements of the multi-beam charged particle microscope. In another example, a predetermined threshold for a maximum frequency of change of an error amplitude is applied, and the drift part is determined by low pass filtering of the development of error amplitudes. In an example, for the separation into the drift part and the dynamic part, the dwell time, the line scan rate and the frame rate is considered. With a dwell time of for example 50 ns, the line scan rate is about 2.5 kHz. Changes or deviations of the imaging performance with a frequency range of about 10 kHz or more can be compensated by control unit 800 and fast compensators of the multi-beam charged particle microscope. It is therefore possible to control fast and dynamic changes or deviations from the imaging performance during a scan of the plurality of lines with the plurality of primary charged particle beamlets. Therefore, during an image acquisition of time interval Ts of about 3 s, dynamic changes are compensated a plurality of times, for example each time of a flyback with a control frequency of about 2.5 kHz, or even during each linescan with a control frequency exceeding 2.5 kHz, for example 5 kHz or 10 kHz or more. Slow drifts on time intervals of seconds are compensated for example during the time interval Tr′ between two successive image scans, for example by slow compensators within time interval Tr′ of about below 0.5 s. In order to synchronize the compensators with different response time, for example delay lines can be included in the control unit.
The prediction of the development of error amplitudes is computed according an approximation with a polynomial expansion and an extrapolation, for example a linear extrapolation, but also other, higher order extrapolation methods such as second order or higher order extrapolation methods are possible. An example of polynomial extrapolation of higher order is given the Runge-Kutta method. In the example of a slowly varying compensator, such as the moving wafer stage, a prediction of the development of an error amplitude, for example a stage position, is achieved by controlling and monitoring the calibrated performance of the slowly varying compensator such as the wafer stage. The prediction of the development of the error amplitudes can also follow a model, a so-called model-based predictor generates expected error amplitudes according model functions of expected developments of error amplitudes. Such predetermined model functions are for example generated by simulation or by representative test operations of the multi-beam charged particle microscope and are stored in a memory of control unit 800. In an example, such predetermined model functions are individual for each individual multi-beam charged particle microscope. In many examples, the estimation of an error behavior following a predictive model comprises a frequency analysis, a low pass filtering and a polynomial approximation.
The development and extrapolation methods described above, such as the separation of error amplitudes into drift and dynamic change or the application of model functions from a prior knowledge, can be selected different for the different deviations of image performance parameters described by temporal development of the error amplitudes. In an example, the control unit 800 is configured to perform a series of operational steps during an image acquisition of a sequence of image patches, including to
In some embodiments, the control unit 800 is further configured to include a step B of approximating a temporal development to at least one of the error amplitudes. In some embodiments, the control unit 800 is further configured to include a step C of predicting a slowly varying drift of at least one of the error amplitudes. In some embodiments, the control unit 800 is further configured to include a step D of predicting a rapidly varying dynamic change of at least one of the error amplitudes.
In an example, the configuration of control unit 800 comprises the performance of step G of providing the set of dynamic control signals to fast acting compensators in a time interval Ts1 of an image scan of a first image patch of a sequence of image patches.
In an example, the configuration of control unit 800 comprises the performance of step F of providing the set of drift control signals to slowly acting compensators in time intervals Tr between a first image scan of a first image patch and a second, subsequent image scan of a second image patch of the sequence of image patches. The time interval Tr is defined by the time interval used to move wafer stage 500 from the first center position of the first image patch to the second center position of the second, subsequent image patch to be obtained by scanning imaging with the multi-beam charged particle microscope 1. In an example, the configuration of control unit 800 comprises the performance of step F of providing the set of drift control parameters to slowly acting compensators in a time interval Ts of one image scan of one image patch.
In an example, the configuration of control unit 800 comprises the performance of step G in a time interval Ts1 or Ts2 of an image scan of an image patch in at least one overlapping time interval, which is overlapping with time interval Tr for stage movement. In an example, the at least one overlapping time interval is at least a part of the time interval Tu for acceleration of the wafer stage, or at least a part of the time interval Td for deceleration of the wafer stage, or both time intervals.
Some embodiments of the disclosure is a method of operation of a multi-beamlet charged-particle microscopy system 1 to perform a wafer inspection task, and a software product for such a wafer inspection task. The method of performing the wafer inspection task comprises software code to perform above mentioned steps A to G. The method is further explained at
In some embodiments of the disclosure, the multi-beamlet charged-particle microscopy system 1 for wafer inspection has therefore several measures to compensate drifts, dynamic effects and residual and unwanted stage movements. An example is illustrated in
The multi-beam charged particle microscope 1 includes a set of compensators comprising at least the first and the second deflection system (110, 222), and slowly acting compensators, such as magnetic elements or mechanical actuators. In an example, the slowly acting compensators comprise the wafer stage 500. The set of compensators further includes a set of fast acting compensators (132, 232, 332) such as electrostatic elements, or mechanical actuators of low mass. The multi-beamlet charged-particle microscopy system 1 is configured with a plurality of detectors comprising the stage position sensor (520) and the image sensor (207), configured to generate during use a plurality of sensor data. The plurality of sensor data includes position and orientation data of the sample stage (500) provided by stage position sensor (520).
The multi-beam charged particle microscope 1 further comprises a control unit (800), wherein the control unit (800) is configured to generate a first set of P control signals Cp from the plurality of sensor data to control the set of compensators during the acquisition of the digital image of the first image patch (17.1), such that during use an operation control is achieved and the specifications mentioned above are maintained during an image acquisition of a sequence of image patches.
During stage movement of stage 500, stage movement is monitored by stage position sensor 520. Stage position sensor 520 are known in the art, and can comprise a Laser interferometer, a grating sensor, or a confocal lens array sensor. During a time interval Ts of an image scan of one image patch of the sequence of image patches, the relative position of wafer stage 500 can be controlled with high stability, for example below 1 nm, such as below 0.5 nm. As described above, between a first and a second image scan of a first and a second, subsequent image patch, stage 500 is triggered by control unit 800 to move from a first inspection site to a second inspection site. At the second inspection site, a new local wafer coordinate system is defined and stage 500 is controlled by stage control module 880 to be located at its predicted position and the relative position to the line of sight is controlled with high stability. Stage position sensor 520 measures stage position and movement in six degrees of freedom with accuracy below 1 nm, such as below 0.5 nm. In an example (not shown), stage position sensor 520 is connected directly to stage control module 880 for a direct feedback loop for control of stage position and movement. However, such a direct feedback loop and control of a wafer stage with high mass is typically slow and does not provide enough accuracy during an image scan. A feedback loop might induce an unwanted stage jitter or lag. According the embodiments of the disclosure, stage position sensor 520 is therefore connected to sensor data analysis system 818 of control unit 800.
According an example of the embodiment, the control unit (800) comprises an image data acquisition unit (810) which is configured to reduce during use the image sensor data from the image sensor (207) to an image sensor data fraction representing for example less than 10% of the image sensor data and to provide the image sensor data fraction to the sensor data analysis system (818). During use, the electron sensitive image sensor 207 receives a large image data stream of image sensor data of the plurality of secondary electron intensity values and feeds image data to image data acquisition unit 810 of control unit 800. The huge amount of image data is not used directly to monitor the image operation of the multi-beamlet charged-particle microscopy system 1. A small fraction of the image data stream is branched off the image data stream, and an image sensor data fraction is guided to sensor data analysis system 818. For example, image data acquisition unit 810 is configured to branch off a subset of the secondary charged particle signals generated at predefined scan positions of the plurality of charged particle beamlets, or signals generated during flyback of the scanning charged particle beams 3 are extracted and forwarded to sensor data analysis system 818. The predefined scan positions can for example be the line start positions of a subset of scanning lines for example each fifth scanning line, or the center position of each. In an example, an image data of a subset of primary charged particle beamlets, for example only of one beamlet at spot position 5.11 (see
The image sensor data fraction and the stage position data from stage sensor 520 are combined in sensor data analysis system 818. The sensor data analysis system 818 analyses the image sensor data fraction from image sensor 207 and position information from stage sensor 520 and extracts position information of the wafer stage with respect to the actual image coordinate system of the plurality of primary charged particle beamlets 3, as explained at the example of
The control unit (800) of the multi-beam charged particle microscope (1) comprises a sensor data analysis system (818) configured to derive a sensor data vector DV of length L from the plurality of sensor data and to analyze the sensor data vector DV and to extract error functions such as image displacement, image rotation, change of focus position and image plane tilt from the sensor data vector DV. The sensor data analysis system 818 is configured to compute during use a set of K amplitudes Ak of K error vectors, with K≤L. In general, sensor data analysis system 818 is configured to analyze a plurality of sensor signals and decompose the plurality of sensor signals into a set of normalized error functions by known methods in the art, for example by a fit operation of the set of normalized error functions to the plurality of sensor signals.
The control unit (800) further comprises a control operation processor (840) for computing the first set of control signals Cp from the set of amplitudes Ak of error vectors. In the example of a dynamic change of the lateral displacement of image points 5, the control operation processor 840 is configured to derive a correction or control signal for a dynamic change of an error amplitude. The control unit (800) is configured to compensate a change of a position or an orientation of the sample stage (500) by computing and providing at least one of the control signals of the first set of control signals Cp to the first and the second deflection unit (110, 222). Sensor data from the image sensor 207 is synchronized and combined with an information from the stage position sensor 520. A relative lateral displacement vector 55 between the local wafer coordinate system at the inspection site and the image coordinate system, defined by the line of sight, is derived by the sensor data analysis system 818. Control operation processor 840 is configured to provide the correction or control signal to deflection control module 860, which controls operation of the first scanning deflector 110 of the multi-beamlet charged-particle microscopy system 1. As a result, first electrostatic scanning deflector 110 controls the scanning operation of the primary charged particle beamlets 3 in synchronization with unwanted dynamic change of wafer stage 500 in lateral direction, here the x- and y-direction. In parallel, deflection control module 860 also controls operation of the second scanning deflector 222, such that the positions of the plurality of secondary electron beamlets 9 on image sensor 207 are kept constant. Thereby, control unit 800 is configured to compensate a dynamic change of the position of stage 500 in lateral direction by a correction of the scanning operations of primary and secondary charged particle beamlets by first and second deflectors 110 and 222, and image acquisition with high image fidelity and high image contrast is maintained well within the desired properties or specifications of the wafer inspection task. The control unit 800 is therefore configured to compute and apply at least an additional voltage signal to the beam deflector 110 in the primary charged particle beam-path 13 for generating during use an additional displacement or rotation of the plurality of primary charged particle beamlets 3 for at least partly compensating the lateral displacement or rotation of the stage relative to the line of sight. The control unit 800 is therefore configured to compute and to apply at least a second additional voltage signal to the beam deflector 222 in the secondary electron beam-path 11 for at least partly compensating the additional displacement or rotation of the plurality of secondary electron beamlets originating from the beam spots 5 of the plurality of primary charged particle beamlets 3 during the adjusted scanning.
Next, an example of an error function is illustrated in which the wafer stage 500 drifts in vertical or z-direction. The set of compensators of the multi-beam charged particle microscope (1) comprises at least one of the compensators (332) of the charged-particle multi-beamlet generator (300), a fast compensator of the object irradiation unit (132) and a compensator (230, 232) of the detection unit (200). Again, an image sensor data fraction is analyzed by sensor data analysis system 818 together with stage position data from stage position sensor 520. The sensor data analysis system 818 analyses the image sensor data fraction from image sensor 207 and position information from stage sensor 520 and extracts position information of the wafer with respect to the actual scanning position and the line of sight of the plurality of primary charged particle beamlets 3. Control operation processor 840 extracts a control signal for focus control of the plurality of primary and secondary charged particle beamlets 3 and 9. Control operation processor 840 of control unit 800 is therefore connected via primary beam path control module 830 to at least one fast compensator 332 of multi-beamlet generator 300, for example an electrostatic focusing lens of the primary charged particle beam path 13, such as electrostatic field lens 308 (see
In an example, the sensor data analysis system (818) of the multi-beam charged particle microscope (1) is configured to predict a temporal development of at least one amplitude An of the set of amplitudes Ak of error vectors. Some of the imaging lenses, for example objective lens 102 or beam splitter element 420 (see
In an example, the charged-particle multi-beamlet generator (300) further comprises a fast compensator (332), and the control unit (800) is configured to compensate a rotation of the sample stage (500) by computing and providing at least one of the control signals of the first set of control signals Cp to the fast compensator (332) to induce a rotation of the plurality of primary charged particle beamlets. For example, dynamic changes in the wafer stage rotation lead to a fast change and deviation from a predefined orientation of the plurality of primary charge particle beamlets relative to the wafer stage. In the example, the dynamic change of rotation is compensated with high speed. Control operation processor 840 is connected to primary beam path control module 830. Primary beam path control module 830 is further connected to fast compensators 332 of multi-beamlet generator 300, for example active multi-aperture plate 306.3 (see
In an example, the stage position sensor 520 comprises a position and a rotation-sensitive sensor, such as for example a double interferometer for each of the x- and y-axis. In an example, the compensation of the wafer stage rotation is performed during the time interval Tr of movement of the wafer stage from a first image patch to a second image patch, as described above in conjunction with
In some embodiments, control operation processor 840 is further connected to image stitching unit 812. Image stitching unit 812 receives the large image data stream from image data acquisition unit 810 and performs a transformation of the image data stream into a 2D image by time-sequential deconvolution of the data stream and image stitching of the image subfields 27 to obtain one image patch 17 (see
In an example, control operation processor 840 of control unit 800 is configured to compensate image rotation by drift and dynamic compensation in parallel. Since the compensation of image rotation by a multi-aperture plate configured as deflector array is of limited range, a slowly varying drift offset can be continuously changed by the drift compensators (130, 230, 330) comprising magnetic lenses, and thereby the range for fast varying dynamic compensation is reduced and is achieved by the multi-aperture plates configured as deflector arrays in primary charged particle beam path 13 as well as in the secondary electron beam path 11.
Next, an example of an error function is illustrated in which the plurality of image spots 5 is formed in an image plane which is tilted with respect to the wafer surface. In this example, control operation processor 840 is configured to derive a signal to correct image tilt, which is forwarded to primary beam-path control module 830. Primary beam-path control module 830 is configured to control fast compensators 332 of multi-beamlet generator 300, for example an active multi-aperture plate 306 (see
In an example of the disclosure and in analogy to the examples above, a direct feedback loop is provided within the control unit 800 between the stage position sensor 520 and first deflection system 110, and the control unit 800 is configured to receive a stage position signal from the stage position sensor 520 and provide at least a first offset signal to the first deflection system 110 to compensate movements of the wafer stage 500 and deviations from target position of the wafer stage 500 by controlling the first deflection system 110. Control unit 800 is further configured to provide at least a corresponding second offset signal to the second deflection system 222. Thereby, fast compensation of position errors or movement of the wafer stage is provided and throughput is increased while maintaining the specifications of a wafer inspection task.
The examples described above off course not only occur in isolation but happen in parallel. The apparatus and error correction methods described above are not limited to the examples described above. Control operation processor 840 is configured to derive control signals in parallel, either by direct feedback or predictive correction or model-based correction as described above, for a set of error amplitudes of a set of imaging deviations. In an example, projection system control module 820 is also connected to sample voltage supply 503 to control the extraction field for extraction of secondary charged particles and thereby to control the collection efficiency of secondary electrons and thereby the intensity of the secondary electron beamlets 9 as well as kinetic energy of the secondary electrons. The kinetic energy is responsible for several other properties, such as the image contrast. In an example, projection system control module 820 is connected to further active elements 230 and 232 of the detection unit 200, such as third deflection systems 218, or correctors such as multipole lenses 216 (see
In general, control operation processor 840 of control unit 800 is configured to derive correction signals from the error amplitudes to compensate slow varying developments of error functions such as for example a slow drift of stage 500. Control operation processor 840 derives from the dynamic changes of error amplitudes a correction strategy for fast compensation of dynamic changes and distributes control signals to primary beamlet control module 830, projection system control module 820 and deflection control module 860 to compensate the fast or dynamic change of error amplitudes as for example fast vibration of the stage 500. Drift and dynamic changes of error amplitudes are computed by sensor data analysis system 818 of control unit 800, and can either be directly derived, based on an extrapolation, or based on a model-based control. The correction strategy can follow a look-up table, or the error amplitudes are decomposed by a linear decomposition into predetermined correction functions provided by the different active elements of the charged particle microscope 1. Control operation processor 840 therefore also monitors the actual status and the status changes of the active elements of charged particle microscope 1. In an example, control operation processor 840 is configured to accumulate the history of provided control signals to active elements such as secondary electron path active element 230, 232, primary beam-path active elements 330 and 332, deflector units 110 or 222, and thereby predict the actual status of the active elements of charged particle microscope 1.
An aspect of the disclosure is the derivation of the error vectors, and the drive signals to drive the compensators to optimize the image quality parameters during use of the multi-beam charged particle microscope, as illustrated at
In an example, at least a kernel of the sensitivity matrix depends from the temperature of the multi-beam charged particle microscope. For example, a temperature change of the column or elements of the column of the multi-beam charged particle microscope results in focus drift, magnification drift or stigmation drift. The detectors provided in the multi-beam charged particle microscope comprise temperature sensors, for example temperature sensors in the cooling water or attached to mechanical components, multi-aperture plates, or inside of magnetic elements. Thereby it is possible to perform an orthogonalization of the respective kernel of the sensitivity matrix at a plurality of representative temperatures and use a temperature corrected sensitivity matrix for the computation of corresponding drive signals for the compensators depending on the temperature signals. The consideration of the actual temperature and the application of a temperature corrected sensitivity matrix and corresponding drive signals are of special relevance for the repeated step of calibration of the multi-beam charged particle microscopy system as described below. In a simplified example, the plurality of temperature sensors is reduced, and an expected temperature is predicted from an operation history of the of the multi-beam charged particle microscopy system.
In an example, a first basis set of driving signals is selected for fast compensators, for example comprising electrostatic compensators and deflectors, such as fast compensators 332 of the multi-beamlet generator, first deflection system 110, fast compensator 132 of the object irradiation unit 100 and a second basis set of driving signals is selected for slowly acting compensators comprising for example magnetic elements, such as slow compensators of object irradiation unit 130 of
Each basis set of driving signals is stored in the memory of control unit 800, for example in a memory of the primary beam path control module 830. The control operation processor 840 derives a set of control signals from the set of amplitudes of error vectors. The primary beam path control module 830 derives a set of driving signals from the basis set of driving signals, for example by multiplication with the set of control signals computed by the control operation processor 840. The secondary beam path control module 820 derives a set of driving signals from the basis set of driving signals, for example by multiplication with the set of control signals computed by the control operation processor 840.
A method of preparing the operation of a multi-beam charged particle microscope configured for wafer inspection comprises therefore the definition of a set of image qualities and a set or normalized error vectors describing deviations from the set of image qualities in conjunction with a sensor data vector. A set of thresholds for the amplitudes of the set or normalized error vectors is determined in accordance with the imaging specifications of the wafer inspection task as described above, and a preselection of a set of compensators of the multi-beam charged particle microscope is performed. The set of compensators comprise a first deflection unit of the multi-beam charged particle microscope for scanning and deflecting the plurality of primary charged particles and a second deflection unit for scanning and deflecting the plurality of secondary electrons generated during use of the multi-beam charged particle microscope. The method of preparing the operation of the multi-beam charged particle microscope for wafer inspection further comprises the determination of a sensitivity matrix according to a linear and/or nonlinear perturbation model by variation of at least a drive signal for each of the compensators of the set of compensators. The sensitivity matrix is analyzed for example by singular value decomposition or similar algorithms. In an example, the sensitivity matrix is decomposed by splitting the into two, three or more kernels or independent subsets of image qualities. Thereby, complexity of computation is reduced, and nonlinear effects or higher order effects are reduced. The method of preparing the operating of the multi-beam charged particle microscope for wafer inspection further comprises the derivation of a set of normalized drive signals for compensating each of the set of normalized error vectors. The normalized error vectors, the normalized drive signals and the set of thresholds are stored in a memory of a control unit of the multi-beam charged particle microscope, forming the predetermined error vectors and predetermined drive signals.
During use, for example during a wafer inspection, the method of operating the multi-beam charged particle microscope comprises further the step of receiving a plurality of sensor data from a plurality of sensors of the multi-beam charged particle microscope forming a sensor data vector. In an example, the plurality of sensor data comprises at least one of a position or speed information of the actual position and actual velocity of a wafer stage for holding a wafer during inspection with the multi-beam charged particle microscope. The set of sensors for generating plurality of sensor data is prepared and configured such that the predetermined error vectors can be derived unambiguously, and, during use, a set of actual amplitudes of normalized error vectors is derived from the sensor data vector, representing an actual state of the set of image qualities of the multi-beam charged particle microscope. A set of control signals is derived from the set of actual amplitudes and a set of actual drive signals is derived from the predetermined normalized drive signals, for example by multiplication with the control signal. A control unit controls the compensators of the multi beam charged particle microscope and provides the set of actual drive signals to the set of compensators such that set of actual amplitudes is kept below the set of thresholds and operation of the wafer inspection task is maintained well within the imaging specifications. In
In a first step SR, the wafer inspection task is registered, for example by an operator or instructions are provided by an external operating system. The loaded wafer is aligned and registered in a predefined global wafer coordinate system of the multi-beam charged-particle microscopy system 1. A wafer inspection task comprises a sequence of inspection sites (for example 33, 35 of
The first and second patch center positions 21.1 and 21.2 of the image patches 17.1 and 17.2 are computed from a list of inspection task comprising the positions of the inspection site 33 on the wafer surface and the area of the inspection task. If a lateral dimension of the area of an inspection site exceeds an image patch, the area of the inspection site is divided into at least two image patches 17.1, 17.2 with the at least first and second patch center positions 21.1, 21.2. The first and second center patch positions 21.1, 21.2 are transformed in wafer coordinates and define the first and second local wafer coordinate systems relative to the global wafer coordinate system. Thereby, a list of a plurality of local wafer coordinate systems for acquisition of corresponding image patches 17.1 and 17.2 is generated.
It is understood that each time a plurality of members is explained by a first and a second member, the plurality can contain more than two members, for example an inspection task can contain a plurality of 50, 100 or more inspection sites, and each inspection site can contain a plurality of 2, 4, or more image patches.
In Step SI the status of the multi-beamlet charged-particle microscopy system is determined for example from an operation history or from an initialization of the multi-beamlet charged-particle microscopy system 1. The initialization of the multi-beamlet charged-particle microscopy system 1 can comprise a calibration of the system, if a corresponding trigger signal is provided. A selected beamlet of the plurality of charge particle beamlets 3 can be used for the calibration of the system. At least one reference sample attached to a dedicated holder on the wafer stage 500 or a second metrology stage can be used for calibration of the system and for the determination of the line of sight 53 of the charged particle microscope and wafer stage position. Two or more reference samples at different positions can be used for calibration of different image performance functions, such as magnification, distortion, or astigmatism.
Step S0 includes positioning and aligning a wafer surface (25) of a wafer with a position of a local wafer coordinate system (551) with a line of sight of the multi-beam charged particle microscope (1). The wafer is positioned and aligned with the next local wafer coordinate system 551 underneath the optical axis or line of sight 53 of multi-beamlet charged-particle microscope 1. The next local wafer coordinate system 551 can be either the first or any subsequent local wafer coordinate system 551 from the list of local wafer coordinate systems generated in step SR.
The wafer stage 500 is triggered to move the wafer such that the local wafer coordinate systems 551 is aligned with the line of sight 53 of the charged particle microscope. The alignment of each local wafer coordinate systems by movement of the wafer stage is performed optionally by help of patterns formed or visible on the wafer surface. The adjustment is stopped, when the difference vector between the image coordinate system 51 with the line of sight 53 as z-axis of the multi-beam charged particle microscope 1 and a local wafer coordinate system 551 is below a threshold. The difference vector 55 is for example a vector comprising the six degrees of freedom for movement of the stage, including displacement and rotation or tilt. For a fine adjustment, the difference vector can be below 50 nm in lateral direction or even less, and below 100 nm in direction of the line of sight or focus direction. A threshold for an image rotation at the z-axis is typically 0.5 mrad, and the threshold for a tilt with respect to the x-y-plane image coordinate system is typically 1 mrad. The fine adjustment can include a least an imaging step of the inspection site and several iterations of stage movements.
In some embodiments of the disclosure, a fast operation mode of wafer inspection task is selected, and the precision is relaxed by and increased threshold by a factor of 2 or even a factor of 10, or even more, and the residual difference vector exceeding the threshold is compensated by the set of compensators of the multi-beam charged particle microscope 1. For that purpose, a plurality of offset error vector amplitudes is generated by the control unit 800 and provided to step S2 below.
In step S1, an image acquisition is performed to acquire a digital image of a first image patch (17.1) of the wafer surface (25) and a plurality of sensor data from the plurality of detectors is collected. An inspection task from the sequence of inspection sites is performed. Step S1 comprises at least:
In step S1-1, the process of image acquisition by scanning imaging of a first image patch 17.1 is started. Each image patch 17 can be imaged with a stage 500 adjusted in coincidence with the line of sight 53 of the multi-beam charged particle microscope 1 according step S0, or with a stage moving at low velocity as described above.
In step S1-2, and parallel with step S1-1, a plurality of sensor data is generated by a plurality of detectors. The plurality of detectors comprises at least the stage position sensors 520 and the image sensor 207. In an example, the plurality of detectors comprises in addition other detectors of the multi-beamlet charged-particle microscope, such as sensors 238 and 138, which generate sensor data during image acquisition. The plurality of sensor data can also comprise the currents or voltages applied to electrostatic and magnetic elements. Other examples of sensors providing sensory data are for example temperature sensors, for example a temperature sensor monitoring the temperature in the cooling fluid, or of magnetic elements.
The imaging of step S1-1 comprises the collection of the plurality of secondary electrons created at the positions where the plurality of primary charged particle beamlets 3 interacts with the wafer surface 25. From the secondary electrons, a plurality of secondary electron beamlets 9 is formed. Each of the plurality of secondary charged particle beamlets 9 is separately detected, and thereby a digital image of the image patch 17 at the respective local wafer coordinate system 551 is obtained.
During step S2, the plurality of sensor data is evaluated in the sensor data analysis system 818. Step S2 comprises at least:
In S2-1, the plurality of sensor data from the different sensors is combined to a sensor data vector DV(i) of length L at the actual time Ta, and expanded sensor data vector DV(i) in a set of K predefined error vectors Ek(i) of length L. The set of predefined error vectors Ek(i) is representative for deviations of the set of image quality parameters of the image acquisition, as described above. A set of K error amplitudes Ak of the set of predefined error vectors Ek(i) is computed such that
DV(i)=EkAk·Ek(i)+ε
with residual error vector £ below a predetermined threshold. During the computation of the error amplitudes AK, the plurality of offset error vector amplitudes or the predicted temporal behavior of offset error vector amplitudes generated in step S0 is considered. In an example, K has the size of six, representing the six degrees of freedom of differences between the local wafer coordinate system and the line of sight, but in general, K is larger than 6, for example the set of error vectors comprises K=14 error vectors including six degrees of freedom of differences between the wafer stage position, the local wafer coordinate system and the line of sight, magnification change, anamorphic distortion change, astigmatism, field curvature, third order distortion and chromatic aberration. In general, K is smaller compared to L, i.e. K<L. The number L of sensor data forming the sensor data vector DV(i) can be 10 or more, but L can be a reduced number to increase computation speed, for example K<L<4 K. For example, if K=14, L can be below 50. By reduction of the plurality of sensor data to error vectors of reduced length L and K error vector amplitudes, the amount of data is reduced, and computation time is increased.
In S2-2, a subset of development amplitudes of at least a subset of the set of actual amplitudes is predicted according an expected development of the multi-beam charged particle microscope in a prediction time interval. A temporal development of at least a subset of n error amplitudes An is derived and the subset of the error amplitudes is considered as time-dependent functions An(t). An example of a derivation of the temporal development of an error amplitudes An(t>Ta) in the prediction time interval after actual time Ta is an extrapolation from the history of an error amplitude An(t<Ta), either by linear or higher order extrapolation as described above. Therefore, during use at least a subset of the set of actual amplitudes of the multi-beam charged particle microscope is recorded for generating a history of the subset of the set of actual amplitudes. Another example of a derivation of the temporal development of an error amplitudes An(t>Ta) is an approximation of the history of an error amplitude An(t) to a predefined set of model functions Mn(t).
In S2-3, the temporal development of at least a subset of error amplitudes An(t) is separated in a drift part Sn(t) and a dynamic change Nn(t) of the temporal development of amplitude An(t)=Sn(t)+Nn(t).
In an example, the predefined error vectors comprise image aberrations introduced in the primary charged particle beam path. Aberrations in the primary charged particle beam path comprise distortions such as a magnification errors, anamorphic distortions such as keystoning, or third and higher order distortions. Other aberrations are for example field curvature, astigmatism or chromatic aberrations.
In an example, the predefined error vectors comprise image aberrations introduced in the secondary electron beam path 11. Aberrations in the secondary electron beam path 11 for example reduce the collection efficiency of secondary electrons and for example induce reduced image contrast and increased noise.
In an example, the combination of the plurality of sensor data to the sensor data vector DV(i) comprises the computation of the difference of several sensor data, for example the difference between positional coordinates of the line of sight of the multi-beam charged particle microscope and the position and orientation data of the stage position sensor. In an example, a filter is applied to at least one of the temporal developments of error amplitudes An(t) such that a specific signature of a selected error amplitude is subtracted from the temporal development of error amplitude An(t). Thereby, the specific signature of a temporal development of error amplitude An(t) which does not affect the image quality is subtracted and the amount of control operations is reduced.
In an example, the set or error vectors is derived from the capabilities of a set of compensators available in the multi-beam charged particle microscope, such that the set or error vectors can be compensated by control of the actuation of the set of compensators. In an example, a possible set of error vectors is derived from imaging experiments, and the multi-beam charged particle microscope is provided with a set of compensators capable for compensation of the set of error vectors.
In an example, the amplitudes or the development of amplitudes of the set of error vectors are compared to a predetermined set of thresholds, which is stored in the memory of the control unit 800.
During a wafer inspection task, a set of predictive control signals is determined from the development of the amplitudes and a set of predictive drive signals from the set of predictive control signals, and the set of predictive drive signals are provided to the set of compensators in time sequential manner, thereby reducing during the prediction time interval the subset of actual amplitudes below the respective of thresholds.
In step S3, a set of P control signals Cp is derived from the set of error amplitudes Ak. The deviations and amplitudes of error amplitudes Ak, including the temporal development of error amplitudes An of error functions En, are analyzed and mapped to a set of P control signals Cp by a control operation processor 840 with a predefined mapping function MF:
MF: A
k
→C
p
The mapping with predefined mapping function MF of the set of K error amplitudes to the set of P control signals is for example achieved by look-up tables, matrix inversion, or numerical fit operations such as singular value decomposition.
In an example, different groups of error vectors are treated in parallel in different error vector categories. For example, coordinate system drifts of two coordinate systems defined by the line of sight and a local wafer coordinate system are treated separately in a coordinate error category. Higher order imaging aberrations or telecentricity aberrations are treated in respective error vector categories. Thereby, the set of control signals for a set of error vectors is computed in parallel and with high speed.
In step S3-1, a set of deflection control signals is derived from the set of control signals Cp.
In step S3-2, a set of primary control signals is derived from the set of control signals Cp.
The primary control signals are selected to control compensators of the primary beam-path to compensate imaging aberrations such as defocus, image plane tilt, field curvature, magnification, astigmatism, chromatic aberration, telecentricity aberration, or other, higher order aberrations.
In step S3-3, a set of secondary control signals is derived from the set of control signals Cp.
In step S3-4, a set of image processing control signals is derived from the set of control signals Cp. The set of image processing control signals comprises a subset of image stitching components ISp to be considered during image stitching.
In an optional step S3-5 (not shown), a set of stage control signals is derived from the set of control signals Cp.
In step S4, the set of control signals Cp is provided to at least one control module of the set of control modules comprising projection system control module 820, primary beam-path control module 830, deflection control module 860, stage control module 880, and image stitching unit 812. Each of the control modules derive from the set of control signals Cp a set of actuation values or drive signals, for example sequences of voltages or currents, to be supplied to at least on compensator of the set of compensators to compensate an imaging aberration represented by an error vector of the set or error vectors. A first of control signal is provided during step S1 of image acquisition to a set of compensators. A second subset of control signals is stored in a memory and provided to step S0 for application during positioning and aligning the next local wafer coordinate system.
In step S4-1, a set of deflection control signals is provided to deflection control module 860. In order to compensate a set of error vectors representing image aberrations, first the lateral position of the focus points 5 of the plurality of primary charged particle beamlets 3 are corrected, such that the focus points are formed on the wafer surface 25 at the predefined lateral positions, defined by the local wafer coordinate system 551 and the predefined raster configuration with a lateral position accuracy of below 10 nm or even less. The lateral alignment of the focus points 5 with the predefined positions is controlled by the first deflection unit 110, deflecting the plurality of primary charged particle beamlets 3. Thereby, for example a change of a position or an orientation of the sample stage (500) is compensated by providing control signals Cp to the first and the second deflection unit (110, 222).
An example of a control signal Cp of the set of deflection control signals is therefore a primary offset signal provided to deflection control module 860. The deflection control module 860 derives a first offset signal for the first deflection unit 110, comprising an electrostatic deflection scanner and the plurality of primary charged particle beamlets 3 is scanned over the wafer surface 25 with scanning paths 27 with an offset position. Thereby, a lateral displacement vector 55 between local wafer coordinate system 551 and line of sight 53 of the multi-beam charged particle microscope 1 is compensated and a correction of the line of sight 53 is achieved such that it deviates from the local wafer coordinate system 551 by less than a predefined threshold or for example 10 nm, 5 nm or even 2 nm, or even below 1 nm.
Further, by providing a second offset signal to the second deflection unit 222, the focus points 15 of secondary electron beamlets 9 are kept at constant position at the image detector 207 and a high image contrast and image fidelity is achieved. In order to keep the positions of the focus points 15 of the plurality of secondary electron beamlets 9 at constant positions at the image sensor 207, the plurality of secondary electron beamlets 9 pass the first deflection unit 110 and a second deflection unit 222. After changing the scanning paths 27 of the plurality of primary charged particle beamlets 5 on the wafer surface 25 with an offset position, the second, independent deflection unit 222 is provided with a second offset signal of the set of deflection control signals, and the offset position of focus points 5 on the wafer surface 5 is compensated by the second deflection unit 222 such that the focus points 15 of the plurality of secondary electron beamlets 9 is kept constant at the image sensor 207.
The offset position can change over time, and the offset control signals are changed during an image scan of an image patch 17. Thereby, for example a lateral drift or jitter of sample stage 500 is compensated.
In step S4-2, a set of primary control signals is provided to primary beam-path control module 830. In order to compensate a set of error vectors representing image aberrations, the longitudinal position of the focus points 5 of the plurality of primary charged particle beamlets 3 are corrected, such that the focus points are formed on the wafer surface 25 with an accuracy below the depth of field of the multi-beam charged particle microscope.
A multi-beam scanning electron microscope typically has a depth of field of about 10 nm-100 nm, and the specification of the maximum focus spot deviation from an image plane is below 10 nm, such as below 5 nm. The image aberration of the focus points 5 of the plurality of primary charged particle beamlets 3 comprise defocus, image plane tilt and field curvature.
For example, a primary control signal to correct image plane tilt is provided to primary beam-path control module 830, and primary beam-path control module 830 derives a set of focus correction voltages for an active multi-aperture plate arrangement 306, for example a multi-aperture lens array. Thereby, each of the focus positions of each individual primary charged particle beamlet 3 is changed individually and an image plane tilt is achieved in order to compensate for example a tilt of the sample stage 500 with respect to the image coordinate system 51.
In another example, a primary control signal to correct defocus is provided to primary beam-path control module 830, and primary beam-path control module 830 derives a voltage change for a field lens 306 to change the image plane position in z-direction as a whole. Thereby, the focus positions of the plurality of primary charged particle beamlets 3 is changed in order to compensate for example a movement of sample stage 500 in the z-direction, the propagation direction of the primary beamlets 3.
In another example, a primary control signal to correct a rotation between image coordinate system 51 and local wafer coordinate system 551 is provided to primary beam-path control module 830, and primary beam-path control module 830 derives a set of deflection voltages for the active multi-aperture plate arrangement 306, for example a multi-aperture deflector array. Thereby, each individual primary charged particle beamlet 3 is deflected individually and a rotation of the image coordinate system 51 is achieved in order to compensate for example a rotation of the sample stage 500 with respect to the image coordinate system 51.
Other control signals to correct other image aberrations of the primary beam-path are provided accordingly. Imaging aberrations of the primary beam path comprise aberrations such as magnification change, astigmatism, chromatic aberration. The set of primary control signals comprises control signals to control compensators of the primary beam path, including compensators of the charged-particle multi-beamlet generator 300 and the object irradiation unit 100.
In step S4-3, a set of secondary control signals is provided to projection system control module 820. To compensate a set of error vectors representing image aberrations, the imaging aberrations of the secondary beam path or of the detection unit are corrected. For example, a secondary control signal to correct image plane tilt is provided to projection system control module 820, and projection system control module 820 derives a set of focus correction voltages for multi-aperture corrector 220, for example a multi-aperture lens array. Thereby, each of the focus positions of each individual secondary electron beamlet 9 is changed individually and an image plane tilt is achieved to compensate for example a tilt of the sample stage 500 with respect to the image coordinate system 51 and an imaging of the secondary electron beamlets 9 from the tilted wafer surface 25 on the image detector 207 is maintained.
In another example, a secondary control signal to correct defocus is provided to projection system control module 820, and projection system control module 820 derives a voltage change for an electrostatic lens 206 to change the image plane position as a whole. Thereby, the focus positions of the plurality of secondary electron beamlets 9 is changed to compensate for example a movement of sample stage 500 in the z-direction, the propagation direction of the primary beamlets, and an imaging of the secondary electron beamlets 9 from the defocused wafer surface 25 on the image detector 207 is maintained.
In another example, a secondary control signal to correct a rotation between image coordinate system 51 and local wafer coordinate system 551 is provided projection system control module 820, and projection system control module 820 derives a set of deflection voltages for the multi-aperture corrector 220, for example a multi-aperture deflector array. Thereby, each individual secondary electron beamlet 9 is deflected individually and a rotation of the image coordinate system 51 is compensated to image the plurality of secondary electron beamlets 9 on the image detector at constant, predefined positions.
The examples illustrate the compensation of image aberrations in the primary beam path 13 and the secondary electron beam 13 in conjunction. Some primary control signals to correct for example image aberrations of the primary beam-path, such as an astigmatism or field curvature are provided to the primary beam-path control module 830 and the image aberration is compensated in the primary beam path 13 alone. Some secondary control signals to correct for example image aberrations of the secondary beam-path are provided accordingly to projection system control module 820 and the image aberration is compensated in the secondary beam path 11 alone.
In step S4-4, a set of image processing control signals is provided to image stitching unit 812. The set of image processing control signals ISp is either directly applied or stored together with the image data stream for application in the image processing and image stitching operations performed by image stitching unit 812.
In optional step S4-5 (not shown), a set of stage control signals is provided to stage control module 880. In an example, a slow drift of the sample stage 500 is detected in step S2 and is compensated by a stage control signal.
In an example, at least subset of the set of control signals Cp is divided into a subset of drift control components CSp and a subset of dynamic control components CNp according the separation of the temporal development of at least a subset of error amplitudes An(t) in a drift part Sn(t) and a dynamic change Nn(t). The subset of drift control components CSp is provided to a set of compensators or active elements of the multi-beamlet charged-particle microscopy system. In an example the drift control components CSp are provided to a subset of slowly varying active components including magnetic elements and the slowly varying active components are driven to change their status. In an example the drift control components CSp are provided to the rapidly varying active elements such as electrostatic deflectors, electrostatic multi-pol correctors, or electrostatic multi-aperture elements. In an example the drift control components CSp are provided to both subsets of compensators. The subset of dynamic control components CNp is provided to rapidly varying active elements of the multi-beamlet charged-particle microscopy system, and the rapidly varying active components are driven to change their action on the charged particle beamlets. Rapidly varying active elements are electrostatic elements, such as electrostatic deflectors, electrostatic multi-pol correctors, electrostatic lenses, or electrostatic multi-aperture elements.
In general, the number of control signals P can exceed the number K of error amplitudes Ak, and P≥K. Each of the control signals Cp can change over time, and at least some of the control signals Cp are changed during an image scan of an image patch 17. Thereby, for example a lateral drift of sample stage 500 is compensated during an image acquisition of one image patch. In an example, at least one control signal is a function depending on time and representing a predicted development of an error amplitude in a subsequent time interval. Thereby, a continuous control operation for compensation of a predicted imaging deviation is achieved.
In step S5, the set of control signals Cp including the subsets of drift control components CSp and dynamic control components CNp are monitored and accumulated to record the history of the changes to the multi-beam charged particle microscope.
In step S6, an actual system status of the multi-beam charged particle microscope is estimated based on the history of the changes.
In optional step S7, the temporal development model functions Mn(t) are adapted to the history of the changes and the actual system status of the multi-beam charged particle microscope and provided to step S2.
In step S8, the actual system status of the multi-beam charged particle microscope is analyzed and the development of the system status is predicted during a subsequent image scan. If the prediction of systems status indicates that a development of an error vector reaches a value which is unable to be compensated, for example because the range of an actuator for compensation is likely to be reached during a subsequent image scan, a recalibration and reset of actuators of the multi-beam charged particle microscope is triggered before the subsequent image scan. In this case, a trigger signal is provided to step SI. If the prediction of systems status indicates that a next imaging task is possible, the method continues with step S0 to step S7 with the image acquisition of a subsequent image patch at next local wafer coordinate system from the list of inspection tasks.
In an example, in step S8, a drift component of a control signal is computed for example by prediction of the development of an error amplitude and provided to step S0. In step S0, the drift component is compensated by actuation of a compensator during the stage is moved from the first image patch to the next, second image patch or a next inspection site. Therefore, in step S0 control unit 800 provides a control signal to the stage control module 880 to move stage 500 from a first to a subsequent local wafer coordinate system, and further provides the drift component of the control signal to at least one of the control modules comprising the primary beam-path control module 830, the projection system control module 820 or the deflection control module 860.
As will be clear from the description, steps S1 to S7 of the method of operation run in parallel and are performed and interacting with each other in real time during an image acquisition of an image patch. A person of skill in the art will be able to recognize that variations and modifications of the method described above are possible.
In some embodiments of the disclosure, a change of object plane 101 or focus position of the plurality of primary charged particle beamlets is enabled while maintaining the specification of a wafer inspection task. The reason for change of object plane 101 can for example be a predefined change of an imaging setting for image acquisition, for example a change of magnification or a change of numerical aperture, a change of the desired resolution or a drift of elements arranged in the primary beam path 13 or secondary beam path 11, such as monitored in step S7 or step S8. The change of the focal plane by magnetic objective lens 102 of a multi beam charged particle microscope 1 has the effect of a rotation to the plurality of primary charged particle beamlets 3. If the focus plane or object plane 101 is changed, the raster configuration of the plurality of primary charged particle beamlets is rotated with respect to the optical axis 105 of the multi beam charged particle microscope 1, as illustrated in
In an example, the control unit 800 or the multi-beam charged particle microscope 1 is configured to derive from a plurality of sensor data an error vector describing a deviation of the orientation of semiconductor structures from the image coordinate system 51 or the direction of the scan paths 27 or the plurality or primary charged particle beamlets, and is further configured to derive a set of control signals and provide the set of control signals to the control modules. The control modules are configured to effect at least one of a rotation of the plurality of primary charged particle beamlets, a rotation of the plurality of secondary electron beamlets, and a rotation of the sample stage 500. For example, control unit 800 is configured to provide control signals to step 0 of the method described above to cause a rotation by slow acting compensators including the wafer stage 500 or the objective lens 102. For example, control unit 800 is further configured to provide control signals to cause a rotation to fast acting compensators such as electrostatic deflector arrays arranged in the primary charged particle or in the secondary electron beam path or in both.
In some embodiments, the method of operating a multi-beam charged particle microscope configured for wafer inspection, comprises a step a) of loading a set of predetermined normalized error vectors describing deviations from a set of image qualities in a memory; a step b) of loading a set of predetermined thresholds for the amplitudes of the set of predetermined normalized error vectors in a memory; and a step c) of loading a set of predetermined normalized drive signals for compensating each of the set of normalized error vectors in a memory. During the wafer inspection task is performed, the method of operating a multi-beam charged particle microscope comprises a step d) of receiving a plurality of sensor data from a plurality of sensors of the multi-beam charged particle microscope forming a sensor data vector. In an example, the plurality of sensor data comprises at least one of a position or speed information of the actual position and actual velocity of a wafer stage for holding a wafer during inspection with the multi-beam charged particle microscope. During the wafer inspection task is performed, the method of operating the multi-beam charged particle microscope further comprises a step e) of determining a set of actual amplitudes of predetermined normalized error vectors from the sensor data vector, representing an actual state of the set of image qualities of the multi-beam charged particle microscope; a step f) of deriving during a wafer inspection a set of control signals from the set of actual amplitudes and a set of actual drive signals from the set of predetermined normalized drive signals; and a step g) of providing during a wafer inspection the set of actual drive signals to a set of compensators, thereby reducing during operation of the multi-beam charged particle microscope the subset of actual amplitudes below the subset of thresholds determined in step b). In an example, the method of operating the multi-beam charged particle microscope further comprises a step h) of predicting during a wafer inspection a subset of development amplitudes of at least a subset of the set of actual amplitudes according an expected development of the multi-beam charged particle microscope in a prediction time interval. In an example, the expected development of the multi-beam charged particle microscope in the prediction time interval is determined according to one of a prediction model function or a linear, second order or higher order extrapolation of the history of a set of actual amplitudes. The method of operating the multi-beam charged particle microscope further comprises a step i) of deriving during a wafer inspection a set of predictive control signals from the set of development amplitudes and a set of predictive drive signals from the set of predictive control signals; a step j) of providing during a wafer inspection the set of predictive drive signals to the set of compensators in time sequential manner, thereby reducing during operation of the multi-beam charged particle microscope in the prediction time interval the subset of actual amplitudes below the subset of thresholds; and a step k) of recording during a wafer inspection at least a subset of the set of actual amplitudes of the multi-beam charged particle microscope for generating a history of the subset of the set of actual amplitudes.
The method of operation of the multi-beam charged particle microscope is prepared before the operation by the steps of selecting the set of compensators of the multi-beam charged particle microscope. In an example, the set of compensators comprise a first deflection unit of the multi-beam charged particle microscope for scanning and deflecting the plurality of primary charged particles and a second deflection unit for scanning and deflecting the plurality of secondary electrons generated during use of the multi-beam charged particle microscope. The method of operation of the multi-beam charged particle microscope is further prepared previous to the operation by the steps of determining the set of predetermined normalized error vectors describing deviations from a set of image qualities, and determining a sensitivity matrix according a linear perturbation model by variation of at least a drive signal for each of the compensators of the set of compensators, and determining the set of predetermined normalized drive signals from the sensitivity matrix for compensating each of the set of predetermined normalized error vectors.
It is understood that the components of the multi-beam charged particle microscope described in conjunction with
At least one of the compensators used in embodiments described above are multi-beam active array elements. With an electrostatic micro-lens array, electrostatic stigmator array or electrostatic deflector array in the primary charged particle beam path, each of the individual primary charged particle beamlet of the plurality of primary charged particle beamlets is influenced individually. By example, such a multi-aperture array 601 is illustrated in
Next, a further embodiment of the disclosure is explained in more detail. A multi-beam charged particle microscope and a method for operating such microscope, configured for wafer inspection is described with reference to
A plurality of primary charged particle beamlets is scanned in parallel over the surface of the wafer, and secondary charged particles are generated and are forming a digital image of an image patch of for example 100 μm-1000 μm diameter. After acquisition of a first digital image of the first image patch, the substrate or wafer stage is moved to a next, second image patch position and the second digital image of the second image patch is obtained by again scanning of the plurality of primary charged particle beamlets. During operation and during each of the image acquisitions, a plurality of sensor data is generated by a plurality of detectors, including the image sensor and the stage position sensor, and a set of control signals is generated. The control signals are provided to control modules, which control the action of active elements such as deflection units for scanning of the plurality of primary and secondary charged particle beamlets, electrostatic lenses, magnetic lenses, stigmators, or active multi-aperture arrays or other compensators. For example, in between the acquisition of the first and second digital image and while the stage is moved from the first image patch to the second image patch, at least a subset of imaging aberrations is compensated for example by slow compensators such as magnetic elements. During the image acquisition of the digital images first or second image patch, a subset of control signals is provided to control modules including the deflection units. Thereby, for example a position error or a drift of the wafer stage relative to the line of sight of the multi-beam charged particle microscope is compensated during an image scan. Other aberrations or deviations from an imaging performance specification are determined and predicted from the sensor data and respective control signals to fast actuators are generated and provided in real time. Thereby, digital images with high image fidelity and high accuracy and a high resolution below 5 nm or 2 nm or 1 nm resolution are formed by stitching multiple image subfields or patches together. The stage is moved between first and second image patches or to the next position of interest, for example the next PCM or an adjacent image field, with high speed and for example reduced times for iterative precision stage alignment.
As will be clear from the description, combinations and various modifications to the examples and embodiments are possible and can be applied in analogy to the embodiments or examples. Charged particle of the primary beam can for example be electrons, but also other charged particles such as He-Ions. Secondary electrons comprise secondary electrons in its narrow sense, but also any other secondary charged particle created by interaction of the primary charged particle beamlets with the sample, such as backscattered electrons or secondary electrons of second order, which are generated by backscattered electrons. In another example, secondary ions can be collected instead of secondary electrons.
Some embodiments might be further described by using following sets of clauses. The disclosure shall however not be limited to any of the sets of clauses:
Clause 1: A method of operating a multi-beam charged particle microscope (1) with high throughput and high resolution, comprising
Clause 2: A method of operating a multi-beam charged particle microscope (1) according clause 1, wherein the second image acquisition of the second image patch 17.2 is initiated before the end of the third time interval Tr, when the wafer stage (500) has completely stopped.
Clause 3: A method of operating a multi-beam charged particle microscope (1) according clause 1 or 2, wherein the third time interval Tr of wafer movement is initiated before the end of the time interval Ts1, when an image acquisition of the first image patch 17.1 is finalized.
Clause 4: A method of operating a multi-beam charged particle microscope (1) according any of the clauses 1 to 3, further comprising the computation of a start time of the third time interval Tr of wafer movement during the first time interval Ts1 of image acquisition of the first image patch 17.1, such that a position deviation of the first center position of the first image patch 17.1 from a line of sight (53) of the multi-beam charged particle microscope (1) or a movement velocity of the wafer stage (500) are below a predetermined threshold.
Clause 5: A method of operating a multi-beam charged particle microscope (1) according any of the clauses 1 to 4, further comprising the computation of a start time of the second time interval Ts2 of the second image acquisition during the time interval Tr of wafer stage movement, such that a position deviation of the second center position 21.2 of the second image patch 17.2 from a line of sight (53) of the multi-beam charged particle microscope (1) or a movement velocity of the wafer stage (500) are below a predetermined threshold.
Clause 6: A method of operating a multi-beam charged particle microscope (1) according any of the clauses 1 to 5, further comprising the step of
Clause 7: A multi-beam charged particle system (1) with high throughput and high resolution, comprising
Clause 8: The system according clause 7, wherein the control unit is further configured for determining of a start time of the third time interval Tr of wafer movement during the first time interval Ts1 of image acquisition of the first image patch 17.1, such that a position deviation of the first center position of the first image patch 17.1 from a line of sight (53) of the multi-beam charged particle microscope (1) or a movement velocity of the wafer stage (500) are below a predetermined threshold.
Clause 9: The system according clauses 7 or 8, wherein the control unit is further configured for determining of a start time of the second time interval Ts2 of the second image acquisition during the time interval Tr of wafer stage movement, such that a position deviation of the second center position 21.2 of the second image patch 17.2 from a line of sight (53) of the multi-beam charged particle microscope (1) or a movement velocity of the wafer stage (500) are below a predetermined threshold.
Clause 10: The system according any of the clauses 7 to 9, wherein the control unit is further configured for predicting a sequence of wafer stage positions during the time interval Tr of movement of the wafer stage (500), and for computing at least a first and a second control signal from the predicted wafer stage positions, and for providing the first control signal to a first deflection system (110) in the primary beam path (13) and the second control signal to a second deflection system (222) in the secondary beam path (11) of the multi-beam charged particle microscope (1).
Clause 11: A method of operating a multi-beam charged particle system (1) with high throughput and high resolution, comprising:
Clause 12: A multi-beam charged particle microscope (1) for wafer inspection, comprising:
Clause 13: A multi-beam charged particle microscope (1) according clause 12, wherein the control unit (800) is configured to compensate a change of a position or a change of an orientation of the sample stage (500) by computing and providing the first set of control signals Cp to the first and the second compensators.
Clause 14: A multi-beam charged particle microscope (1) according any of clauses 12 or 13, wherein the control unit (800) is configured to compensate a change of a position of a line of sight (53) of the object irradiation unit (100) by computing and providing the first set of control signals Cp the first and the second compensators.
Clause 15: A multi-beam charged particle microscope (1) according any of clauses 12 to 14, wherein the control unit (800) is configured to compensate a difference of a change of a position or a change of an orientation of the sample stage (500) and a change of a position of a line of sight (53) of the object irradiation unit (100) by computing and providing the first set of control signals Cp to the first and the second compensators.
Clause 16: A multi-beam charged particle microscope (1) according any of the clause 12 to 15, wherein the control unit (800) is configured to compensate a movement velocity of the sample stage (500) during the acquisition of the digital image of the first image patch (17.1) or the second image patch (17.2) by computing and providing the first set of control signals Cp to the first and the second compensators.
Clause 17: A method of wafer inspection with a multi-beam charged particle microscope with following steps is given:
Clause 18: A method according clause 17, wherein the prediction of the development of the first error amplitude is generated according a prediction model or an extrapolation.
Clause 19: A method according clause 17 or 18, wherein the first error amplitude represents at least one of a displacement of a line of sight, a displacement of a wafer stage, a rotation of a wafer stage, rotation of a line of sight, a magnification error, a focus error, an astigmatism error, or a distortion error.
Clause 20: A method according any of the clause 17 to 19, wherein the control signal is provided to control units of the multi-beam charged particle microscope for controlling components comprising at least one of a wafer stage, a first deflection unit, a second deflection unit, a fast compensator of a multi-beamlet generation unit or a fast compensator of a detection unit.
Clause 21: A method of operation of a multi-beam charged particle microscope with a control unit, the method comprising a series of operational steps during an image acquisition of a sequence of image patches comprising a first image patch and a second, subsequent image patch, including
Clause 22: The method of clause 21, wherein the step of extracting the set of drift control signals and the set of dynamic control signals is performed during a time interval Ts1 of an image acquisition of a first image patch; and the step of providing the set of drift control signals to slowly acting compensators is performed during a time interval Tr of a movement of a substrate by using a substrate stage from the first image patch to the second image patch.
Clause 23: The method of clause 21 or 22, wherein the step of providing the set of dynamic control signals to fast acting compensators in performed in the time interval Ts1.
Clause 24: The method of clause 22 or 23, wherein the step of providing the set of dynamic control signals to fast acting compensators is further performed in a time interval Ts2 of an image scan of the second image patch.
Clause 25: The method of any of the clauses 21 to 24, further comprising a step of predicting a temporal development of at least one of the error amplitudes.
Clause 26: The method of clause 25, comprising predicting a slowly varying drift of at least one of the error amplitudes and predicting a rapidly varying dynamic change of at least one of the error amplitudes.
Clause 27: A non-transitory computer readable medium comprising a set of instructions that is executable by one or more processors of an apparatus to cause the apparatus to perform a method, wherein the apparatus includes a charged-particle source to generate a plurality of primary charged-particle beamlets and the method comprising:
Clause 1: A multi-beam charged-particle beam system comprising:
Clause 2: The system according clause 1, wherein the control unit is further configured to compute the lateral displacement or rotation of the stage corresponding to a difference between a current position of the stage and a target position of the stage during scanning of the plurality of primary charged-particle beamlets on the sample surface.
Clause 3: The system according clauses 1 or 2, wherein the control unit is further configured to compute the lateral displacement of the line of sight corresponding to a difference between a current position of the line of sight and a target position of the line of sight during scanning of the plurality of primary charged-particle beamlets on the sample surface.
Clause 4: The system according clauses 2 or 3, wherein the control unit and the first beam deflector are further configured for dynamically adjusting at least one driving voltage signal during scanning of the primary charged-particle beamlets on the sample.
Clause 5: The system according any of the clauses 1 to 4, further comprising a second beam deflector in the secondary electron beam-path, configured for at least partly compensating the additional displacement or rotation of the plurality of secondary electron beamlets originating from the beam spot positions of the plurality of primary charged particle beamlets during scanning.
Clause 6: The system according any of the clauses 1 to 5, wherein the control unit further comprises a stage motion controller, wherein the stage motion controller comprises a plurality of motors configured to be independently controlled by a control signal.
Clause 7: The system according any of the clauses 1 to 6, wherein the control unit comprises a processor which is configured for deriving a plurality of error vector amplitudes based on a plurality of sensor signals and extracting at least one of the plurality of control signals from the plurality of error vector amplitudes.
Clause 8: A method for irradiating a sample disposed on a stage in a multi-beam charged-particle beam system, the method comprising:
Clause 9: The method of clause 8, wherein the lateral displacement or rotation of the stage corresponds to a difference between a current position of the stage and a target position of the stage, and wherein the rotation displacement varies during scanning of the plurality of primary charged-particle beamlets on the sample surface.
Clause 10: The method of any one of clauses 8-9, further comprising dynamically adjusting at least one of the voltage signals during scanning of the primary charged-particle beamlets on the sample.
Clause 11: The method of any one of clauses 8-10, further comprising
Clause 12: The method of any one of clauses 8-11, further comprising applying a control signal to a stage motion controller, wherein the stage motion controller comprises a plurality of motors configured to be independently controlled by the control signal.
Clause 13: The method of any one of clauses 8-12, further comprising
Clause 1: A multi-beam charged particle microscope (1) for wafer inspection, comprising:
Clause 2: A multi-beam charged particle microscope (1) according clause 1, wherein the first compensator (132, 110) comprises one of an electrostatic lens, electrostatic deflector, electrostatic stigmator, electrostatic micro-lens array, electrostatic stigmator array, or an electrostatic deflector array.
Clause 3: A multi-beam charged particle microscope (1) according any of the clauses 1 or 2, wherein the control unit (800) is configured to generate a first set of control signals Cp to synchronously control the first compensator (132, 110) in the object irradiation unit (100) and the second compensator (232) in the projection system (205) during the acquisition of the digital image of the first image patch (17.1).
Clause 4: A multi-beam charged particle microscope (1) according any of the clauses 1 to 3, further comprising a third compensator (330, 332) in the charged-particle multi-beamlet generator (300) configured for additionally displacing or rotating during use the scanning spot positions (5) of the plurality of primary charged particle beamlets (3) on the wafer surface (25).
Clause 5: A multi-beam charged particle microscope (1) according clause 4, wherein the control unit (800) is configured to generate a first set of control signals Cp to synchronously control any of the first compensator (132, 110) in the object irradiation unit (100), the second compensator (232, 222) in the projection system (205) or the third compensator (330, 332) in the charged-particle multi-beamlet generator (300) during the acquisition of the digital image of the first image patch (17.1).
Clause 6: A multi-beam charged particle microscope (1) according any of the clauses 1 to 5, further comprising a plurality of detectors comprising the stage position sensor (520) and the image sensor (207), configured to generate during use a plurality of sensor data.
Clause 7: A multi-beam charged particle microscope (1) according clause 6, wherein the control unit (800) is configured to derive from the plurality of sensor data a driving signal for the first compensator (132, 110) in the object irradiation unit (100) to achieve an additional displacement of the scanning spot positions (5) of the plurality of primary charged particle beamlets (3) synchronized with a displacement of the wafer surface (25).
Clause 8: A multi-beam charged particle microscope (1) according clause 7, wherein the additional displacement comprises a rotation of the raster configuration (41) of the plurality of primary charged particle beamlets (3).
Clause 9: A multi-beam charged particle microscope (1) according any of the clauses 6 to 8, wherein the control unit (800) is configured to compensate the additional displacement of the spot positions (5) on the displaced wafer surface (25) by the second compensator (232, 222) in the projection system (205), wherein the second compensator (232, 222) in the projection system (205) is configured to operate synchronized with the first compensator (132, 110) in the object irradiation unit (100), thereby keeping constant the spot positions of the plurality of secondary electron beamlets (9) on the image detector (207).
Clause 10: A multi-beam charged particle microscope (1) according any of the preceding clauses, wherein the first compensator in the object irradiation unit (100) is the first deflection system (110), and wherein the control unit (800) is configured to compensate a displacement or a rotation of the sample stage (500) relative to a line of sight (53) of the object irradiation unit (100) by computing and providing a control signal for an additional displacement or rotation of the scanning spot positions (5) of the plurality of primary charged particle beamlets (3) to the first deflection system (110).
Clause 11: A multi-beam charged particle microscope (1) according any of the preceding clauses, wherein the second compensator the projection system (205) is the second deflection system (222), and wherein the control unit (800) is configured to compensate the additional displacement or rotation of the scanning spot positions (5) of the plurality of primary charged particle beamlets (3) on the displaced wafer surface (25) by computing and providing a control signal to the second deflection system (110).
Clause 12: A multi-beam charged particle microscope (1) according any of the preceding clauses, comprising at least one of a further compensator of the charged-particle multi-beamlet generator (300), a further compensator of the detection unit (200), or a further compensator of the object irradiation unit (100).
Clause 13: A multi-beam charged particle microscope (1) according any of the preceding clauses, wherein the control unit (800) comprises a sensor data analysis system (818) configured to analyze during use the plurality of sensor data and to compute during use a set of K amplitudes Ak of K error vectors.
Clause 14: A multi-beam charged particle microscope (1) according clause 13, wherein the control unit (800) comprises an image data acquisition unit (810) which is configured to reduce during use the image sensor data from the image sensor (207) to an image sensor data fraction representing less than 10%, such as less than 2% of the image sensor data and to provide the image sensor data fraction to the sensor data analysis system (818).
Clause 15: A multi-beam charged particle microscope (1) according clause 14, wherein the image data acquisition unit (810) is configured to reduce during use the image sensor data from the image sensor (207) to an image sensor data fraction comprising digital image data of a plurality of secondary electron beamlets at a reduced sampling rate.
Clause 16: A multi-beam charged particle microscope (1) according clause 14, wherein the image data acquisition unit (810) is configured to reduce during use the image sensor data from the image sensor (207) to an image sensor data fraction comprising digital image data of a reduced set of secondary electron beamlets (9).
Clause 17: A multi-beam charged particle microscope (1) according any of the clauses 13 to 16, wherein the sensor data analysis system (818) is configured to predict a temporal development of at least one amplitude An of the set of amplitudes Ak of error vectors.
Clause 18: A multi-beam charged particle microscope (1) according any of clauses 13 to 17, wherein the control unit (800) further comprises a control operation processor (840) for computing the first set of control signals Cp from the set of amplitudes Ak of error vectors.
Clause 19: A multi-beam charged particle microscope (1) according any of clauses 13 to 18, wherein the sensor data analysis system (818) is configured to derive a sensor data vector DV of length L from the plurality of sensor data, with L>=K.
Clause 20: A multi-beam charged particle microscope (1) according any of clauses 4 to 19, wherein the control unit (800) is configured to compensate a rotation of the sample stage (500) by computing and providing at least one of the control signals of the first set of control signals Cp to the third compensator (330, 332) to induce a rotation of the raster configuration (41) of plurality of primary charged particle beamlets (3).
Clause 21: A multi-beam charged particle microscope (1) according any of clauses 1 to 20, wherein the control unit (800) is further configured to generate a control signal for moving the wafer surface (25) by the wafer stage (500) to a second center position of a second image patch (17.2) in the object plane (101) for image acquisition of a digital image of a second image patch (17.2).
Clause 22: A multi-beam charged particle microscope (1) according clause 21, wherein the control unit (800) is further configured to compute a second set of P control signals Cp from the plurality of sensor data to control of any of the compensators during the time interval Tr of movement of the wafer stage (500) to the second center position of the second image patch (17.2).
Clause 23: A multi-beam charged particle microscope (1) according any of the clauses 21 to 22, wherein the control unit (800) is further configured to compute a start time of the image acquisition of the second image patch (17.2) during time interval Tr and to start the image acquisition of the second image patch (17.2) during a deceleration time interval Td of the wafer stage (500), and wherein the control unit (800) is further configured to provide at least an offset signal of a predicted offset position of the wafer stage (500) during time interval Td to the first and second compensators.
Clause 1: A multi-beam charged-particle beam system comprising:
Clause 2: The system of clause 1, wherein the first signal comprises an electrical signal affecting how the plurality of primary charged-particle beamlets is deflected in the at least one of X-Y axes.
Clause 3: The system of clause 2, wherein the electrical driving signal comprises a signal having a bandwidth in a range of 0.1 kHz to 10 kHz.
Clause 4: The system of any one of clauses 1 to 3, wherein the lateral displacement corresponds to a difference between a current position of the stage and a target position of the stage in the at least one of X-Y axes.
Clause 5: The system of any one of clauses 1 to 4, wherein the controller is further configured to dynamically adjust at least one of the first signal or the second signal during scanning of the plurality of primary charged-particle beamlets on the sample.
Clause 6: The system of any one of clauses 1 to 5, further comprising a stage motion controller, wherein the stage motion controller comprises a plurality of motors configured to be independently controlled by a third signal.
Clause 7: The system of clause 6, wherein each of the plurality of motors are independently controlled to adjust a tilt of the stage, such that the stage is substantially perpendicular to an optical axis of the primary charged-particle beam.
Clause 8: The system of any one of clauses 6 or 7, wherein the plurality of motors comprises at least one of a piezoelectric motor, piezoelectric actuator, or an ultrasonic piezomotor.
Clause 9: The system according any of the clause 1 to 8, further comprising: a first component configured to form a plurality of error vector amplitudes based on a plurality of sensor signals; and a second component configured to extract at least one of the plurality of control signals from the plurality of error vector amplitudes.
Clause 10: The system according clause 9, wherein the first component is configured to form the plurality of error vector amplitudes based on the lateral displacement of the stage and of an actual position of a line of sight of the multi-beam charged-particle beam system.
Clause 11: The system of clause 9 or 10, wherein the extraction of at least one of the plurality of control signals is based on a predictive model of the plurality of error vector amplitudes.
Clause 12: The system of any one of clauses 9 or 11, wherein the extraction of at least one of the plurality of control signals is further based on a predictive model of an actuation output of the stage.
Clause 13: The system of any one of clauses 1-12, wherein the position sensing system determines the lateral and vertical displacement and rotation of the stage using any of a laser interferometer, a capacitive sensor, a confocal sensor array, a grating interferometer or a combination thereof.
Clause 1: A method for irradiating a sample disposed on a stage in a multi-beam charged-particle beam system, the method comprising:
Clause 2: The method of clause 1, wherein the first signal comprises an electrical signal affecting how the primary charged-particle beam is deflected in the at least one of X-Y axes.
Clause 3: The method of any one of clauses 1-2, wherein the lateral displacement corresponds to a difference between a current position of the stage and a target position of the stage in the at least one of X-Y axes.
Clause 4: The method of any one of clauses 1 to 3, further comprising dynamically adjusting at least one of the first signal or the second signal during scanning of the plurality of primary charged-particle beam on the sample.
Clause 5: The method of any one of clauses 1 to 4, further comprising
Clause 6: The method of any one of clauses 1 to 5, further comprising
Clause 7: The method of clause 6, further comprising predicating at least one of the control signals based on a predictive model of temporal behavior of the plurality of error vector amplitudes.
Clause 8: The method of any one of clauses 6-7, further comprising predicating at least one of the plurality of control signals based on a predictive model of an actuation output of the stage.
Clause 1: A method of wafer inspection with a multi-beam charged particle microscope (1), with a plurality of detectors comprising an image sensor (207) and a stage position sensor (520), and with a set of compensators comprising at least a first and a second deflection system (110, 222),
Clause 2: A method of wafer inspection with a multi-beam charged particle microscope (1) according clause 2, further comprising
Clause 3: A method of wafer inspection with a multi-beam charged particle microscope (1) according any of the clauses 1 to 2, further comprising
Clause 4: A method of wafer inspection with a multi-beam charged particle microscope (1) according any of the clauses 1 to 3, further comprising
Clause 5: A method of wafer inspection with a multi-beam charged particle microscope (1) according any of the clauses 1 to 4, further comprising
Clause 1: A method of operating a multi-beam charged particle microscope (1) configured for wafer inspection, comprising
Clause 2: A method of operating a multi-beam charged particle microscope (1) according clause 1, wherein the set of compensators comprises a first deflection unit (110) of the multi-beam charged particle microscope (1) for scanning and deflecting the plurality of primary charged particles (3) and a second deflection unit (222) for scanning and deflecting the plurality of secondary electron beamlets (9) generated during use of the multi-beam charged particle microscope (1).
Clause 1: A method of operating the multi-beam charged particle microscope (1), comprising
Clause 2: A method of operating the multi-beam charged particle microscope (1) according clause 1, wherein the plurality of sensor data comprises at least one of a position or speed information of the actual position and actual velocity of a wafer stage (500) for holding or moving a wafer during inspection with the multi-beam charged particle microscope (1).
Clause 3: A method of operating the multi-beam charged particle microscope (1) according clause 1 or 2, wherein the plurality of sensor data comprises at least one of an actual position of a line of sight (52) during a wafer during inspection with the multi-beam charged particle microscope (1).
Clause 4: A method of operating the multi-beam charged particle microscope (1) according any of the clauses 1 to 3, wherein the steps are repeated at least twice, at least ten times, for example every scanning line during acquisition of an image patch.
Clause 5: A method of operating the multi-beam charged particle microscope (1) according any of the clauses 1 to 4, further comprising a step of predicting during a wafer inspection a subset of development amplitudes of at least a subset of the set of actual amplitudes according an expected development of the multi-beam charged particle microscope in a prediction time interval.
Clause 6: A method of operating the multi-beam charged particle microscope (1) according any of the clauses 1 to 5, further comprising a step of recording during use at least a subset of the set of actual amplitudes of the multi-beam charged particle microscope for generating a history of the subset of the set of actual amplitudes.
Clause 7: A method of operating the multi-beam charged particle microscope (1) according any of the clauses 1 to 6, further comprising the step of deriving during a wafer inspection a set of predictive control signals from the set of development amplitudes and a set of predictive drive signals from the set of predictive control signals, and step of providing during a wafer inspection the set of predictive drive signals to the set of compensators in time sequential manner, thereby reducing during operation of the multi-beam charged particle microscope in the prediction time interval the subset of actual error amplitudes below the set of thresholds.
Clause 8: A multi-beam charged particle microscope with a control unit (800) and software code installed, configured for application of any of the methods according any of the clauses 1 to 7.
Clause 1: A method of focusing a plurality of primary charged-particle beamlets on a sample, the method comprising:
Clause 2: A method according clause 1, wherein the method comprises adding at least a first deflection voltage to a first scanning voltage for scanning the focus spots of the plurality of primary charged-particle beamlets by using the second component.
Clause 3: A method according clauses 1 or 2, further comprising
Clause 4: A method according any of the clauses 1 to 3, further comprising
Clause 5: A method according clause 4, wherein the method comprises adding at least a second deflection voltage to a second scanning voltage for scanning the plurality of secondary charged-particle beamlets by using the fourth component.
Clause 6: A method according any of the clauses 1 to 5, further comprising:
Clause 7: A method according clause 6, further comprising:
Clause 8: A method according any of the clauses 6 or 7, further comprising:
Clause 1: A multi-beam charged-particle beam system comprising:
Clause 2: A multi-beam charged-particle beam system according clause 2, wherein the third component is the first component.
Clause 3: A multi-beam charged-particle beam system according clause 2, wherein the third component is the second component.
Clause 4: A multi-beam charged-particle beam system according clause 3, further comprising a control unit configured for adding at least a first deflection voltage configured for dynamically manipulating the predetermined scanning beam paths to a first scanning voltage provided to the second component configured for scanning the focus spots of the plurality of primary charged-particle beamlets.
Clause 5: A multi-beam charged-particle beam system according any of the clause 1 to 4, further comprising a charged-particle multi-beamlet generator configured for generating the plurality of primary charged particle beamlets.
Clause 6: A multi-beam charged-particle beam system according any of the clause 1 to 5, further comprising a control unit configured for adjusting during use a line of sight of the object irradiation unit with the first component.
Clause 7: A multi-beam charged-particle beam system according any of the clause 1 to 6, further comprising
Clause 8: A multi-beam charged-particle beam system according clauses 7, wherein the fifth component is the fourth component.
Clause 9: A multi-beam charged-particle beam system according clause 8, wherein the control unit is further configured for adding at least a second deflection voltage configured for dynamically manipulating the predetermined secondary electron beam paths to a second scanning voltage provided to the fourth component for scanning the plurality of secondary charged-particle beamlets.
Clause 10: A multi-beam charged-particle beam system according any of the clause 1 to 9, further comprising a stage sensor configured for determining a lateral displacement or a rotation of the stage.
Clause 11: A multi-beam charged-particle beam system according clauses 10, wherein the control unit is further configured for deriving the first and the second deflection voltage from the lateral displacement or rotation provided by the stage sensor.
Clause 12: The system of any one of clauses 1 to 11, wherein the first component is located upstream of the second component.
Clause 1: A method of performing a wafer inspection with a multi-beam charged-particle beam apparatus, the method comprising:
Clause 2: A method according clause 1, further comprising:
Clause 3: A method according clause 2, wherein the determination of a slowly changing variation of the object irradiation unit comprises the determination of a slowly variation of a line of sight of the object irradiation unit.
Clause 4: A method according any of the clauses 1 to 3, further comprising:
Clause 5: A method according clause 4, wherein the determination of a dynamic variation of the object irradiation unit comprises the determination of a dynamic change of a line of sight of the object irradiation unit.
Clause 6: A method according any of the clauses 2 to 5, further comprising:
Clause 7: A method according any of the clauses 4 to 6, further comprising:
Clause 8: The method of any one of clauses 1 to 7, wherein the determination of the first and second drift compensation signal is based on a predictive model of the temporal behavior of the multi-beam charged-particle beam apparatus.
Clause 9: The method of clause 8, wherein the determination of the first or second drift compensation signal and first or second dynamic compensation signal is based on a frequency analysis of the temporal behavior of the multi-beam charged-particle beam apparatus.
Clause 10: The method of any one of clauses 1 to 9, further comprising receiving a plurality of sensor signals, including sensor signals from a stage position sensor and an image sensor.
Clause 11: The method of clause 10, further comprising determining, using a control unit, the drift and dynamic compensation signal based on the received plurality of sensor signals.
Clause 12: The method of any one of clauses 1 to 11, further comprising
Clause 13: The method of clause 12, wherein the estimating of the predictive model comprises a frequency analysis, a low pass filtering and a polynomial approximation.
Clause 14: The method of clause 12 or 13, further comprising synchronizing, using at least a delay line, the drift and dynamic compensation signals with the predictive model.
Clause 15: The method of any of the clauses 1 to 14, further comprising
Clause 1: A multi-beam charged particle microscope (1) for wafer inspection, comprising:
Clause 2: A multi-beam charged particle microscope (1) according clause 1, wherein the control unit (800) is configured to compensate a change of a position of a line of sight (53) of the object irradiation unit (100) by computing and providing the first set of control signals Cp the first and the second compensators.
Clause 3: A multi-beam charged particle microscope (1) according any of the clauses 1 or 2, wherein the control unit (800) is configured to compensate a difference of a change of a position or a change of an orientation of the sample stage (500) and a change of a position of a line of sight (53) of the object irradiation unit (100) by computing and providing the first set of control signals Cp to the first and the second compensators
Clause 1: A multi-beam charged particle microscope (1) for wafer inspection, comprising:
Clause 2: A multi-beam charged particle microscope (1) according clause 1, wherein the set of compensators further comprises at least one of a compensator (330, 332) of the charged-particle multi-beamlet generator (300) and a compensator (230, 232) of the detection unit (200).
Clause 3: A multi-beam charged particle microscope (1) according any of clause 1 or 2, wherein the control unit (800) comprises a sensor data analysis system (818) configured to analyze during use the plurality of sensor data and to compute during use a set of K amplitudes Ak of K error vectors.
Clause 4: A multi-beam charged particle microscope (1) according clause 3, wherein the control unit (800) comprises an image data acquisition unit (810) which is configured to reduce during use the image sensor data from the image sensor (207) to an image sensor data fraction representing less than 10%, such as less than 2% of the image sensor data and to provide the image sensor data fraction to the sensor data analysis system (818).
Clause 5: A multi-beam charged particle microscope (1) according any of clauses 3 or 4, wherein the sensor data analysis system (818) is configured to predict a temporal development of at least one amplitude An of the set of amplitudes Ak of error vectors.
Clause 6: A multi-beam charged particle microscope (1) according any of clauses 3 to 5, wherein the control unit (800) further comprises a control operation processor (840) for computing the first set of control signals Cp from the set of amplitudes Ak of error vectors.
Clause 7: A multi-beam charged particle microscope (1) according any of clauses 3 to 6, wherein the sensor data analysis system (818) is configured to derive a sensor data vector DV of length L from the plurality of sensor data, with L>K.
Clause 8: A multi-beam charged particle microscope (1) according any of clauses 1 to 7, wherein the control unit (800) is configured to compensate a change of a position or a change of an orientation of the sample stage (500) by computing and providing at least one of the control signals of the first set of control signals Cp to the first and the second deflection unit (110, 222).
Clause 9: A multi-beam charged particle microscope (1) according any of clauses 1 to 8, wherein the control unit (800) is configured to compensate a change of a position of a line of sight (53) of the object irradiation unit (100) by computing and providing at least one of the control signals of the first set of control signals Cp to the first and the second deflection unit (110, 222).
Clause 10: A multi-beam charged particle microscope (1) according any of clauses 1 to 9, wherein the control unit (800) is configured to compensate a difference of a change of a position or a change of an orientation of the sample stage (500) and a change of a position of a line of sight (53) of the object irradiation unit (100) by computing and providing at least one of the control signals of the first set of control signals Cp to the first and the second deflection unit (110, 222).
Clause 11: A multi-beam charged particle microscope (1) according any of clauses 1 to 10, wherein the charged-particle multi-beamlet generator (300) further comprises a fast compensator (330), and the control unit (800) is configured to compensate a rotation of the sample stage (500) by computing and providing at least one of the control signals of the first set of control signals Cp to the fast compensator (330) to induce a rotation of the plurality of primary charged particle beamlets.
Clause 12: A multi-beam charged particle microscope (1) according any of clauses 1 to 11, wherein the control unit (800) is further configured to generate a third control signal for moving the wafer surface (25) by the wafer stage (500) to a second center position of a second image patch 17.2 in the object plane (101) for image acquisition of a digital image of a second image patch (17.2).
Clause 13: A multi-beam charged particle microscope (1) according clause 12, wherein the control unit (800) is further configured to compute a second set of P control signals Cp from the plurality of sensor data to control the set of compensators during the time interval Tr of movement of the wafer stage (500) to the second center position of the second image patch (17.2).
Clause 14: A multi-beam charged particle microscope (1) according any of the clauses 12 to 13, wherein the control unit (800) is further configured to compute a start time of the image acquisition of the second image patch 17.2 during time interval Tr and to start the image acquisition of the second image patch 17.2 during a deceleration time interval Td of the wafer stage (500), and wherein the control unit (800) is further configured to provide at least an offset signal of a predicted offset position of the wafer stage (500) during time interval Td to the first and second deflection systems (110, 222).
Clause 1: A method of improving throughput of a multi-beam charged particle microscope, comprising:
Clause 2: A method of clause 1, wherein the controlling comprises providing a control signal to a multi-beam multi-pole deflector device, for dynamically controlling the plurality of beam spot positions on the sample surface with high precision of below 100 nm, below 70 nm, or even below 30 nm.
Clause 3: A method of clause 1 or 2, further comprising a step of sensing the focus spot positions on the sample surface by using an image sensor with high accuracy of below 100 nm, below 70 nm, or even below 30 nm.
Clause 4: A method of any of the clauses 1 to 3, wherein the beam pith dl is about 10 μm.
A non-transitory computer readable medium may be provided that stores instructions for a processor (for example of control unit 800, or sensor data analysis system 818) to carry out wafer inspection, wafer imaging, stage calibrations, displacement error calibration, displacement error compensation, manipulating the electromagnetic field associated with the sample, communicate with image data acquisition unit 810, activating an acceleration sensor, or executing an algorithm to estimate or predict a performance of the multi-beamlet charged-particle microscopy system 1 including the sample stage 500, and control operations of the multi-beamlet charged particle system. Common forms of non-transitory media include, for example, a hard disk, a solid state drive, any optical data storage medium, a Random Access Memory (RAM), a Programmable Read Only Memory (PROM), and Erasable Programmable Read Only Memory (EPROM), a FLASH-EPROM or any other flash memory, Non-Volatile Random Access Memory (NVRAM), a cache, a register, any other memory chip or cartridge.
The block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer hardware or software products according to various exemplary embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical functions. It should be understood that in some alternative implementations, functions indicated in a block may occur out of the order noted in the figures. For example, two blocks shown in succession may be executed or implemented substantially concurrently, or two blocks may sometimes be executed in reverse order, depending upon the functionality involved. Some blocks may also be omitted. It should also be understood that each block of the block diagrams, and combination of the blocks, may be implemented by special purpose hardware-based systems that perform the specified functions or acts, or by combinations of special purpose hardware and computer instructions.
It will be appreciated that the embodiments of the present disclosure are not limited to the exact construction that has been described above and illustrated in the accompanying drawings, and that various modifications and changes may be made without departing from the scope thereof. It will be appreciated that the disclosure is not limited to the set of clauses, and that various modifications and changes or other combinations of clauses may be made without departing from the scope thereof. It will be appreciated that the disclosure is not limited to either a method or an apparatus, but will cover any apparatus configured for operating according any method or any method utilizing elements and configurations of any apparatus of the description or the set of clauses.
Number | Date | Country | Kind |
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102020206739.2 | May 2020 | DE | national |
The present application is a continuation of, and claims benefit under 35 USC 120 to, international application PCT/EP2021/061216, filed Apr. 29, 2021, which claims benefit under 35 USC 119 of German Application No. 10 2020 206 739.2, filed May 28, 2020. The entire disclosure of these applications are incorporated by reference herein.
Number | Date | Country | |
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Parent | PCT/EP2021/061216 | Apr 2021 | US |
Child | 17968243 | US |