Magnetic and MO media are widely employed in various applications, particularly in the computer industry for data/information storage and retrieval purposes. As discussed in U.S. Pat. No. 6,444,100, a magnetic medium in e.g., disk form, such as utilized in computer-related applications, comprises a non-magnetic substrate, e.g., of glass, ceramic, glass-ceramic composite, polymer, metal, or metal alloy, typically an aluminum (Al)-based alloy such as aluminum-magnesium (Al—Mg), having at least one major surface on which a layer stack comprising a plurality of thin film layers constituting the medium are sequentially deposited. Such layers may include, in sequence from the workpiece (substrate) deposition surface, a plating layer, e.g., of amorphous nickel-phosphorus (Ni—P), a polycrystalline underlayer, typically of chromium (Cr) or a Cr-based alloy such as chromium-vanadium (Cr—V), a magnetic layer, e.g., of a cobalt (Co)-based alloy, and a protective overcoat layer, typically of a carbon-based material having good mechanical (i.e., tribological) properties. A similar situation exists with MO media, wherein a layer stack is formed which comprises a reflective layer, typically of a metal or metal alloy, one or more rare-earth thermo-magnetic (RE-TM) alloy layers, one or more dielectric layers, and a protective overcoat layer, for functioning as reflective, transparent, writing, writing assist, and read-out layers, etc.
According to conventional manufacturing methodology, a majority of the above-described layers constituting magnetic and/or MO recording media are deposited by cathode sputtering, typically by means of multi-cathode and/or multi-chamber sputtering apparatus wherein a separate cathode comprising a selected target material is provided for deposition of each component layer of the stack and the sputtering conditions are optimized for the particular component layer to be deposited. Each cathode comprising a selected target material can be positioned within a separate, independent process chamber, in a respective process chamber located within a larger chamber, or in one of a plurality of separate, interconnected process chambers each dedicated for deposition of a particular layer. According to such conventional manufacturing technology, media substrates, typically in disk form, are serially transported, in linear or circular fashion, depending upon the physical configuration of the particular apparatus utilized, from one sputtering target and/or process chamber to another for sputter deposition of a selected layer thereon. In some instances, again depending upon the particular apparatus utilized, sputter deposition of the selected layer commences only when the substrate (e.g., disk) deposition surface is positioned in complete opposition to the sputtering target, e.g., after the disk has fully entered the respective process chamber or area in its transit from a preceding process chamber or area, and is at rest. Stated somewhat differently, sputter deposition commences and continues for a predetermined interval only when the substrate is not in motion, i.e., deposition occurs onto static substrates. In other instances, however, substrate transport, hence motion, between adjoining process chambers or areas is continuous, and sputter deposition of each selected target material occurs in a “pass-by” mode onto moving substrates as the latter pass by each cathode/target assembly.
Regardless of which type of sputtering apparatus is employed for forming the thin layer stacks constituting the magnetic recording medium, it is essential for obtaining high recording density, high quality media that each of the component layers be deposited in a highly pure form and with desired physical, chemical, and/or mechanical properties. Film purity depends, inter alia, upon the purity of the atmosphere in which the film is grown; hence films are grown in as low a vacuum as is practicable. However, in order to maintain the rate of sputtering of the various target materials at levels consistent with the throughput requirements of cost-effective, large-scale media manufacture, the amount of sputtering gas in the process chamber(s), typically argon (Ar), must be maintained at levels which generate and sustain plasmas containing an adequate amount of ions for providing sufficient bombardment and sputtering of the respective target material. The requirement for maintaining an adequate amount of Ar sputtering gas for sustaining the plasma at an industrially viable level, however, is antithetical to the common practice of applying a negative voltage bias to the substrates during sputter deposition thereon for achieving optimum film properties, such as, for example, the formation of carbon-based protective films containing a greater proportion of desirable sp.sup.3 bonds (as in diamond), for use as protective overcoat layers in the manufacture of disk media. Contamination of the bias-sputtered films with Ar atoms occurs because the plasmas almost always contain a large number of Ar+ ions, relative to the number of ions of the sputtered target species, which Ar+ ions are accelerated towards the negatively biased substrate surfaces and implanted in the growing films along with the sputtered target species.
Magnetos sputtering is a principal method of depositing metal onto a semiconductor integrated circuit during its fabrication in order to form electrical connections and other structures in the integrated circuit. A target is composed of the metal to be deposited, and ions in a plasma are attracted to the target at sufficient energy that target atoms are dislodged from the target, that is, sputtered. The sputtered atoms travel generally ballistically toward the wafer being sputter coated, and the metal atoms are deposited on the wafer in metallic form. Alternatively, the metal atoms react with another gas in the plasma, for example, nitrogen, to reactively deposit a metal compound on the wafer. Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the sides of narrow holes.
U.S. Pat. No. 6,610,184 to Ding, et al. discloses an array of auxiliary magnets that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
In one aspect, a plasma sputter reactor includes a vacuum chamber; a pedestal for supporting a substrate in said vacuum chamber; a sputtering target positioned in opposition to said pedestal; and a magnetron positioned on a side of said target opposite said sputtering target, the magnetron having magnets providing a race-track beam.
In another aspect, a method for sputtering a thin film onto a substrate includes providing a plurality of deposition chambers, each having at least one target and a substrate having a film-forming surface portion and a back portion; creating a magnetic field so that the film-forming surface portion is placed in the magnetic field with the magnetic field induced normal to the substrate surface portion; back-biasing the back portion of the substrate; and sputtering material onto the film-forming surface portion.
Advantages of the system may include one or more of the following. One advantage is that multiple materials can be deposited, and that materials can be deposited on the way in and on the way out. By properly adjusting the wafer-source distance, a highly uniform deposition thickness can be achieved. The system provides sputtering techniques whose deposition rates are consistent with the throughput requirements of automated manufacturing processing. The system also produces thin films of high purity and of desired physical, chemical, and/or mechanical properties. The system sputters high purity, high quality, thin film layer stacks or laminates having optimal physical, chemical, and/or mechanical properties for use in the manufacture of single- and/or dual-sided magnetic and/or MO media, e.g., in the form of disks, which means and methodology provide rapid simple, and cost-effective formation of such media, as well as various other products and manufactures comprising at least one thin film layer.
In order that the manner in which the above-recited and other advantages and features of the invention are obtained, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments thereof, which are illustrated, in the appended drawings. Understanding that these drawings depict only typical embodiments of the invention and are not therefore to be considered to be limiting of its scope, the invention will be described and explained with additional specificity and detail through the use of the accompanying drawings in which:
Referring now to the drawings in greater detail, there is illustrated therein structure diagrams for a semiconductor processing system and logic flow diagrams for processes a system will utilize to deposit semiconductor devices at low temperature, as will be more readily understood from a study of the diagrams.
The argon working gas can be metered into the chamber from a gas supply (not shown) through a mass flow controller. A vacuum pump maintains the interior of the chamber at a low base pressure. During plasma ignition, the argon pressure is supplied in an amount producing a chamber pressure of approximately 5 milliTorr, but as will be explained later the pressure is thereafter decreased. The DC power supply negatively biases the target and causes the argon working gas to be excited into a plasma containing electrons and positive argon ions. The positive argon ions are attracted to the negatively biased target and sputter metal atoms from the target. The negative self-bias on the wafer 200 attracts the positively charged metal atoms across the sheath of the adjacent plasma, thereby coating the sides and bottoms of high aspect-ratio holes in the wafer, such as, inter-level vias.
The embodiment of
As shown in
Additionally, the wafer 200 is positioned between the heater 250 and a magnetron 260. The magnetron 260 serves as highly efficient sources of microwave energy. In one embodiment, microwave magnetrons employ a constant magnetic field to produce a rotating electron space charge. The space charge interacts with a plurality of microwave resonant cavities to generate microwave radiation. One electrical node 270 is provided to a back-bias generator such as the generator 26 of
In the system of
In one embodiment, the reactor of
In a multiple target embodiment, each of the targets is positioned between opposed magnets. The targets are positioned in the reactor of
Under pressure, sputtering plasma is formed in the space between the facing targets while power from the power source is applied. Since magnetic fields are generated around the peripheral area extending in a direction perpendicular to the surfaces of facing targets, highly energized electrons sputtered from surfaces of the facing targets are confined in the space between facing targets to cause increased ionized gases by collision in the space. The ionization rate of the sputtering gases corresponds to the deposition rate of thin films on the substrate, then, high rate deposition is realized due to the confinement of electrons in the space between the facing targets. The substrate 200 is arranged so as to be isolated from the plasma space between the facing targets.
Film deposition on the substrate 200 is processed at a low temperature range due to a very small number of impingement of plasma from the plasma space and small amount of thermal radiation from the target planes. A typical facing target type of sputtering method has superior properties of depositing ferromagnetic materials at high rate deposition and low substrate temperature in comparison with a magnetron sputtering method. When sufficient target voltage VT is applied, plasma is excited from the argon. The chamber enclosure is grounded. The RF power supply to the chuck or pedestal causes an effective DC ‘back-bias’ between the wafer and the chamber. This bias is negative, so it repels the low-velocity electrons.
The presence of the large positively biased shield affects the plasma, particularly close to the pedestal electrode 24. As a result, the DC self-bias developed on the pedestal 24, particularly by an RF bias source, may be more positive than for the conventional large grounded shield, that is, less negative since the DC self-bias is negative in typical applications. It is believed that the change in DC self-bias arises from the fact that the positively biased shield drains electrons from the plasma, thereby causing the plasma and hence the pedestal electrode to become more positive.
One of the deposition chambers is a facing target sputtering. The deposition chamber includes a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder. The back-bias power supply is a DC or an AC electric power source. A robot arm is used to move the wafer. A magnetron is also in the chamber. A chuck heater can be mounted above the wafer. A rotary chuck is used to move a wafer. A linear motor can be used to move the rotary chuck and sequentially expose the wafer to the plurality of chambers. Each chamber provides a collimated deposition pattern. Each chamber includes a door that opens during each chamber's deposition and closes when the chamber is not depositing. Each door includes a baffle to catch falling particulates. The chambers share magnets. A housing pump to evacuate air from the housing. Each chamber further comprises a chamber pump. Thus, a differential pump is formed by including a housing pump to evacuate air from the housing and one chamber pump for each chamber. Each chamber comprises a facing target power supply. A variable power supply drives the target plates, where the variable power supply being adjusted for each deposition.
The system of
Turning now to
The system of
In one embodiment, a process for obtain variable 2D deposition coverage is as follows:
Although one back-biased power supply is mentioned, a plurality of back-bias power supplies can be used. These power supplies can be controllable independently from each other. The electric energies supplied can be independently controlled. Therefore, the components of the thin film to be formed are easily controlled in every sputtering batch process. In addition, the composition of the thin film can be changed in the direction of the thickness of the film by using the Facing Targets Sputtering device.
It is to be understood that various terms employed in the description herein are interchangeable. Accordingly, the above description of the invention is illustrative and not limiting. Further modifications will be apparent to one of ordinary skill in the art in light of this disclosure.
The invention has been described in terms of specific examples which are illustrative only and are not to be construed as limiting. The invention may be implemented in digital electronic circuitry or in computer hardware, firmware, software, or in combinations of them.
Apparatus of the invention for controlling the fabrication equipment may be implemented in a computer program product tangibly embodied in a machine-readable storage device for execution by a computer processor; and method steps of the invention may be performed by a computer processor executing a program to perform functions of the invention by operating on input data and generating output. Suitable processors include, by way of example, both general and special purpose microprocessors. Storage devices suitable for tangibly embodying computer program instructions include all forms of non-volatile memory including, but not limited to: semiconductor memory devices such as EPROM, EEPROM, and flash devices; magnetic disks (fixed, floppy, and removable); other magnetic media such as tape; optical media such as CD-ROM disks; and magneto-optic devices. Any of the foregoing may be supplemented by, or incorporated in, specially-designed application-specific integrated circuits (ASICs) or suitably programmed field programmable gate arrays (FPGAs).
While the preferred forms of the invention have been shown in the drawings and described herein, the invention should not be construed as limited to the specific forms shown and described since variations of the preferred forms will be apparent to those skilled in the art. Thus the scope of the invention is defined by the following claims and their equivalents.