Patent Application
20240038802
The present disclosure relates to an imaging apparatus and a manufacturing method for an imaging apparatus.
Patent Document 1 discloses an imaging apparatus having a wafer chip scale package (WCPS) structure in which an optical element area is covered with a sealing glass.
In general, α rays (alpha rays) are emitted from a member such as glass.
When the α ray is incident on an image sensor together with image-capturing light, a white point appears in a portion corresponding to an incident location of the α ray in the image sensor, in an obtained captured image. The white point caused by α rays in the captured image in this way is also called a “subsequent white point”, and may impair image quality of a subject image.
In the imaging apparatus of Patent Document 1, α rays emitted from the sealing glass are incident on the optical element area. Therefore, in a captured image acquired by the imaging apparatus of Patent Document 1, a white point that is not originally included in a subject image may appear.
The present disclosure has been made in view of the above circumstances, and an object thereof is to provide a technique advantageous for acquiring a captured image in which an influence of α rays is suppressed.
One aspect of the present disclosure relates to an imaging apparatus including: a sensor substrate having a photoelectric conversion element on which image-capturing light is incident; a cover substrate that covers the photoelectric conversion element and transmits image-capturing light; and an α-ray transmission preventive film that transmits image-capturing light.
The α-ray transmission preventive film may have a thickness of 1 μm or less.
The α-ray transmission preventive film may have a transmittance of α rays of 0.001 count/h or less.
The α-ray transmission preventive film may be arranged between the sensor substrate and the cover substrate.
The α-ray transmission preventive film may be attached to the cover substrate.
A surface of the cover substrate on the sensor substrate side may have an uneven shape, and the α-ray transmission preventive film may be attached to the surface of the cover substrate on the sensor substrate side.
The imaging apparatus may include an antireflection film attached to the α-ray transmission preventive film.
The imaging apparatus may include an on-chip lens that covers the photoelectric conversion element, and the α-ray transmission preventive film may be located between the on-chip lens and the sensor substrate.
The imaging apparatus may include an on-chip lens that covers the photoelectric conversion element, and the α-ray transmission preventive film may be located on a side opposite to the sensor substrate via the on-chip lens.
The imaging apparatus may include a gas layer provided between the sensor substrate and the cover substrate.
The imaging apparatus may include a lower lens attached to a surface of the cover substrate on the sensor substrate side, and the lower lens may face the sensor substrate via the gas layer.
The imaging apparatus may include an antireflection film attached to a surface of the lower lens on the sensor substrate side.
The imaging apparatus may include an upper lens attached to a surface of the cover substrate on a side opposite to the sensor substrate, and an antireflection film attached to a surface of the upper lens on a side opposite to the cover substrate.
The imaging apparatus may include a support body that is located between the cover substrate and the sensor substrate and fixes the cover substrate to the sensor substrate, and the support body may include a light shielding part.
The imaging apparatus may include a light shielding body attached to a portion of the cover substrate outside a portion facing the photoelectric conversion element.
Another aspect of the present disclosure relates to an imaging apparatus including: a sensor substrate; a cover substrate; and a lower lens located between the sensor substrate and the cover substrate and facing the sensor substrate via a gas layer.
The gas layer may have a thickness of 20 μm or less.
The imaging apparatus may include an antireflection film attached to a surface of the lower lens on the sensor substrate side.
Another aspect of the present disclosure relates to a manufacturing method for an imaging apparatus, the manufacturing method including: a step of preparing a first layered body including a cover substrate and an α-ray transmission preventive film; a step of preparing a second layered body including a sensor substrate; and a step of layering the first layered body and the second layered body such that the α-ray transmission preventive film is located between the cover substrate and the sensor substrate.
Another aspect of the present disclosure relates to a manufacturing method for an imaging apparatus, the manufacturing method including: a step of preparing a first layered body including a cover substrate; a step of preparing a second layered body including a sensor substrate and an α-ray transmission preventive film; and a step of layering the first layered body and the second layered body such that the α-ray transmission preventive film is located between the cover substrate and the sensor substrate.
Embodiments of an imaging apparatus and a manufacturing method for an imaging apparatus will be described below with reference to the drawings.
Hereinafter, a description is given to an example of an imaging apparatus of a wafer-level chip size package (CSP) having a stacked image sensor structure in which a pixel portion (that is, a photoelectric conversion element portion) and a signal processing portion are stacked.
However, an application target of the technology described below is not limited to the imaging apparatus having the stacked image sensor structure and the imaging apparatus having the CSP structure. The technology described below can also be applied to an imaging apparatus having another structure and a manufacturing method for such an imaging apparatus.
An imaging apparatus according to the present embodiment includes a lower lens located between a sensor substrate and a cover substrate.
The imaging apparatus 10 illustrated in
The sensor substrate 11 includes a large number of photoelectric conversion elements 12 on which image-capturing light L is incident and wiring (not illustrated) connected to each photoelectric conversion element 12. The photoelectric conversion elements 12 are two-dimensionally arranged in a layer extending direction D2 along a light receiving surface of the sensor substrate 11 (that is, a surface on the cover substrate 13 side), and output pixel signals corresponding to incident light.
The sensor substrate 11 is layered on a logic substrate 40, and is configured integrally with the logic substrate 40. The sensor substrate 11 and the logic substrate 40 having the integrated structure are collectively referred to as a layered substrate 41.
Although not illustrated, the logic substrate 40 includes a logic circuit, and wiring connected to the logic circuit. The logic circuit includes a signal processing circuit that processes a pixel signal from the photoelectric conversion element 12.
The layered substrate 41 has a plurality of wiring electrodes (including back surface electrodes) 42.
The wiring electrode 42 protrudes from a back surface of the layered substrate 41 (that is, a surface of the logic substrate 40 on a side opposite to the sensor substrate 11), and functions as a connection interface for an external device. The back surface of the layered substrate 41 is covered with a solder resist 44 which is an insulating film. In a state where a space between the wiring electrodes 42 protruding from the back surface of the layered substrate 41 is filled with the solder resist 44, an end surface portion of each wiring electrode 42 is exposed outward.
The exposed portion of the wiring electrode 42 illustrated in
A light receiving surface of the sensor substrate 11 located on a side opposite to the logic substrate 40 (that is, a light incident surface of the plurality of photoelectric conversion elements 12) is covered with an on-chip lens 23. The on-chip lens 23 includes a plurality of microlenses. Each microlens condenses the image-capturing light L toward one or more allocated photoelectric conversion elements 12.
Although not illustrated, any functional layer (for example, a color filter layer) may be arranged between the on-chip lens 23 and the sensor substrate 11 (the photoelectric conversion element 12).
The cover substrate 13 covers the sensor substrate 11 (in particular, a light incident surface of all the photoelectric conversion elements 12 contributing to acquisition of a captured image), and transmits the image-capturing light L. The cover substrate 13 has a function of protecting the on-chip lens 23 and the sensor substrate 11 (in particular, the photoelectric conversion element 12), and can be configured with a transparent member (for example, glass) having excellent rigidity.
The cover substrate 13 illustrated in
The support body 30 having such a structure can be formed at a wafer level. In this case, the support body 30 can be accurately formed to a desired size (for example, a desired width and a desired height).
The support body 30 may have any material and any structure. As will be described later, a part or all of the support body 30 may be configured with a member (for example, a black resin, a color filter, or a bandpass filter) having relatively low or high wavelength selectivity with respect to a transmittance of light in a specific wavelength region. A part or all of the support body 30 may be configured with a functional member having desired optical characteristics, water resistance, and/or other characteristics, or such a functional member may be attached to the support body 30.
The gas layer 20 is located between the sensor substrate 11 and the cover substrate 13. The gas layer 20 is surrounded and hermetically sealed by the sensor substrate 11, the cover substrate 13, and the support body 30. The gas layer 20 illustrated in
A thickness of the gas layer 20 (that is, a size in a layering direction D1 in which the sensor substrate 11 and the cover substrate 13 overlap) is not limited. As described later, by bringing a light reflection interface (for example, a surface of the lower lens 22 on the sensor substrate 11 side or a surface of the cover substrate 13 on the sensor substrate 11 side) close to the sensor substrate 11, a flare and ghost (hereinafter, also simply referred to as a “flare”) in a captured image can be reduced.
Therefore, the thickness of the gas layer 20 is preferably small from the viewpoint of suppressing image quality degradation of a captured image caused by stray light L1. For example, in a case where the gas layer 20 has a thickness of 20 μm or less, a flare in a captured image can be effectively reduced.
To a surface of the cover substrate 13 on a side opposite to the sensor substrate 11, an upper lens 21 is attached. Whereas, to the surface of the cover substrate 13 on the sensor substrate 11 side, the lower lens 22 is attached. The lower lens 22 illustrated in
At a time of actual image-capturing, the image-capturing light L from a subject is incident on the photoelectric conversion element 12 through the upper lens 21, the cover substrate 13, the lower lens 22, and the on-chip lens 23, after an optical path is adjusted through a lens module (not illustrated). In this way, when the image-capturing light L is received by the plurality of photoelectric conversion elements 12, and a corresponding pixel signal is output from each photoelectric conversion element 12, a captured image of the subject is obtained.
When transmitting the image-capturing light L, the α-ray transmission preventive film 14 does not transmit a part (most) or all of α rays contained in the image-capturing light L.
The α-ray transmission preventive film 14 has a high film density and/or a high electron density capable of reducing a particles (alpha particles) in the image-capturing light L, by using deceleration of the α particles due to a reaction when the a particles collide with elements and/or electrons.
The α-ray transmission preventive film 14 can have any composition, and can include, for example, a material that absorbs, traps, reflects, and/or scatters α rays. The α-ray transmission preventive film 14 can have a transmittance of α rays of 0.001 count/h or less, even in a case of having a thickness of 1 μm or less with respect to the layering direction D1 (that is, an optical axis direction).
In order to prevent α rays emitted from the cover substrate 13 from being incident on the photoelectric conversion element 12, the α-ray transmission preventive film 14 is preferably provided between the cover substrate 13 and the sensor substrate 11 (in particular, the photoelectric conversion element 12). The α-ray transmission preventive film 14 illustrated in
Note that an arrangement position of the α-ray transmission preventive film 14 in the imaging apparatus 10 is not limited to the position illustrated in
Therefore, the α-ray transmission preventive film 14 may be provided between the on-chip lens 23 and the photoelectric conversion element 12 (see
Furthermore, the α-ray transmission preventive film 14 may be provided between the on-chip lens 23 and the cover substrate 13 (see
Note that the α-ray transmission preventive film 14 may generate heat when the image-capturing light L is transmitted. Therefore, from the viewpoint of suppressing an influence of heat on a captured image, the α-ray transmission preventive film 14 is preferably provided at a position away from the photoelectric conversion element 12 (for example, the cover substrate 13 and/or the lower lens 22).
To a surface of the α-ray transmission preventive film 14 on the sensor substrate 11 side, an antireflection film 15 that suppresses reflection of light is attached. In the example illustrated in
A material (a composition) of the antireflection film 15 and a formation method for the antireflection film 15 are not limited. The antireflection film 15 may contain one or both of an inorganic material (SiO2, SiON, SiN, NbO, TiO, AlO, or the like) and an organic material (hollow silica particles or the like). Therefore, the antireflection film 15 may be, for example, an organic film having a refractive index of about 1.5, a material containing a high refractive index filler, or an inorganic film such as a silicon nitride film.
The antireflection film 15 may have a single layer structure or a multilayer structure (that is, a layered structure).
The installation location of the antireflection film 15 is not limited to the example illustrated in
In particular, by providing the antireflection film 15 at an interface between media having a large difference in refractive index at which light is easily reflected, it is possible to effectively suppress unintended reflection of light and to reduce generation of the stray light L1. For example, by arranging the antireflection film 15 at an interface between the gas layer 20 and a medium (each of the lower lens 22 and the on-chip lens 23 in the example illustrated in
Next, an example of an interface structure between the cover substrate 13 and the α-ray transmission preventive film 14 will be described.
The upper lens 21, the cover substrate 13, and the α-ray transmission preventive film 14 illustrated in each of
However, in the example illustrated in each of
In
The cover substrate 13 illustrated in
The α-ray transmission preventive film 14 illustrated in each of
In a case where an interface between the α-ray transmission preventive film 14 and the cover substrate 13 has the uneven structure as described above, an optical path length in the α-ray transmission preventive film 14 can be lengthened by refraction of the image-capturing light L at the interface. As a result, α ray non-transmission efficiency (that is, efficiency of removing the α ray) in the α-ray transmission preventive film 14 can be improved.
Even in a case where the α-ray transmission preventive film 14 is attached to a member other than the cover substrate 13, the α ray non-transmission efficiency in the α-ray transmission preventive film 14 can be improved when the interface between the α-ray transmission preventive film 14 and the member to which the α-ray transmission preventive film 14 is attached has an uneven structure.
Next, an example of a manufacturing method for an imaging apparatus 10 will be described.
The imaging apparatus 10 (see
In the present manufacturing method example, first, as illustrated in
A method of applying the α-ray transmission preventive film 14 is not limited. For example, by using a spin coating method, a dipping method, a method using a squeegee, an inkjet method, or a vapor deposition method, a constituent material of the α-ray transmission preventive film 14 can be applied to the cover substrate 13. The constituent material of the α-ray transmission preventive film 14 may be fixed to the cover substrate 13 by natural drying, or the fixing to the cover substrate 13 may be promoted by heating or ultraviolet irradiation in a case where thermal curing characteristics or UV curing characteristics is provided.
Next, as illustrated in
Note that, as in the imaging apparatus 10 illustrated in
The lower lens 22 can be formed by any method. The lower lens 22 may be formed by applying a constituent material of the lower lens 22 onto the α-ray transmission preventive film 14 and molding the constituent material. For example, the lower lens 22 can be formed on the α-ray transmission preventive film 14 by using an imprint method, a grayscale patterning (grayscale lithography) method, a reflow method, or a combination of the reflow method and an etch back method. Alternatively, the lower lens 22 formed in advance may be bonded to the α-ray transmission preventive film 14 via a bonding layer (not illustrated).
Next, as illustrated in
Next, as illustrated in
The support body 30 can be provided on the α-ray transmission preventive film 14 by any method. For example, the support body 30 may be formed by applying a material constituting the support body 30 onto the α-ray transmission preventive film 14, and thereafter, performing patterning (for example, resist patterning) to leave only a portion located on an outer peripheral portion of the α-ray transmission preventive film 14. In a case where the support body 30 includes a plurality of constituent layers, adjacent constituent layers may be fixed to each other with a thin adhesive layer (for example, an adhesive of about 1 to 500 nm) interposed therebetween.
The support body 30 of the present example is formed in a first layered body including the cover substrate 13, but may be formed in a second layered body including the layered substrate 41 (the sensor substrate 11 and the logic substrate 40).
Next, as illustrated in
A bonding method of the first layered body and the second layered body is not limited. In a case where the support body 30 exhibits favorable adhesion to the first layered body (the antireflection film 15 in the present example), the first layered body and the second layered body may be bonded by directly fixing the support body 30 to the first layered body. Alternatively, the first layered body and the second layered body may be bonded via an adhesive layer (not illustrated).
Next, as illustrated in
Next, as illustrated in
Next, as illustrated in
Next, as illustrated in
Note that, in a case where a light shielding body such as an aperture (for example, a black resist or a patterned metal film) is formed on the cover substrate 13 (see
The upper lens 21 can be provided on the cover substrate 13 by a method similar to that of the lower lens 22 described above. The upper lens 21 may be formed by applying a constituent material of the upper lens 21 onto the cover substrate 13 and molding the constituent material. Alternatively, the preformed upper lens 21 may be bonded to the cover substrate 13 directly or via a bonding layer.
Then, as illustrated in
The imaging apparatus 10 of the wafer-level CSP-type formed through the above-described series of steps is then diced to form a plurality of bare chips.
As described above, the manufacturing method of the present example includes a step of preparing the first layered body including the cover substrate 13 and the α-ray transmission preventive film 14 (see
In the present embodiment, elements same as or similar to those in the first embodiment described above are denoted by the same reference numerals, and the detailed description thereof will be omitted.
The imaging apparatus of the present embodiment does not include the lower lens 22.
The imaging apparatus 10 illustrated in
According to the imaging apparatus 10 of the present example, a thickness of a gas layer 20 in a layering direction D1 can be further reduced, and a cover substrate 13 can be brought close to a sensor substrate 11 (in particular, a photoelectric conversion element 12).
As a result, it is possible to promote miniaturization (that is, reduction in height) of a size of the imaging apparatus 10 in the layering direction D1.
Next, an example of a manufacturing method for an imaging apparatus 10 will be described.
In the present manufacturing method example, first, as illustrated in
Thereafter, an antireflection film 15 is applied onto the α-ray transmission preventive film 14 as illustrated in
Thereafter, as illustrated in
Thereafter, the layered substrate 41 is thinned as illustrated in
Then, as illustrated in
Thereafter, the imaging apparatus 10 of the wafer-level CSP-type formed through the above-described series of steps is diced to form a plurality of bare chips.
The α-ray transmission preventive film 14 may be provided so as to be located between the on-chip lens 23 and the sensor substrate 11.
In the example illustrated in
More specifically, as illustrated in
The protective film 55 is a member for protecting the photoelectric conversion element 12, and can contain, for example, silicon dioxide (SiO2). The light shielding film 54 is located between the adjacent photoelectric conversion elements 12 in a layer extending direction D2, and prevents light from leaking into the adjacent photoelectric conversion elements 12. The planarization film 53 planarizes a region where the color filter layer 52 is formed. The color filter layer 52 includes a plurality of color filters provided for every photoelectric conversion element 12. The organic material layer 51 functions as an adhesive layer, and can contain, for example, an acrylic resin material, a styrene resin material, or an epoxy resin material.
The α-ray transmission preventive film 14 may be located on a side opposite to the sensor substrate 11 via the on-chip lens 23.
In the example illustrated in
The support body 30 is attached to the cover substrate 13 via the antireflection film 15, and is attached to the layered substrate 41 (in particular, the sensor substrate 11) via the antireflection film 15 and the α-ray transmission preventive film 14.
A specific layering form of the α-ray transmission preventive film 14 and the antireflection film 15 on the on-chip lens 23 and the layered substrate 41 is not limited.
As illustrated in
Furthermore, as illustrated in
In a case where the antireflection film 15 is provided on the flat surface of the α-ray transmission preventive film 14 (see
In a case where the α-ray transmission preventive film 14 is provided between the gas layer 20 and the sensor substrate 11 as illustrated in
That is, the present manufacturing method example includes a step of preparing a first layered body including the cover substrate 13 and a step of preparing a second layered body including the sensor substrate 11 and the α-ray transmission preventive film 14. The present manufacturing method includes a step of layering the first layered body and the second layered body such that the α-ray transmission preventive film 14 is located between the cover substrate 13 and the sensor substrate 11.
Next, a configuration example of the support body 30 will be described with reference to
An imaging apparatus 10 illustrated in each of
The support body 30 may include a plurality of structures, and these structures may have a layered structure in which the structures are stacked on each other.
The support body 30 illustrated in
The first support structure 30a and second support structure 30b may contain different materials, or may contain a mutually same material. For example, the first support structure 30a and the second support structure 30b may contain materials (an organic film and an inorganic film (including an inorganic oxide film, a nitride film, a metal film, and the like)) having mutually different functional characteristics. Such functional characteristics include mechanical characteristics (for example, rigidity), water resistance (moisture impermeability), hygroscopicity, light non-transmissibility, sealability, and any other characteristics.
The support body 30 may partially or entirely include a light shielding part 31.
The support body 30 illustrated in
To the support body 30, an attachment body having various functional characteristics may be attached.
A light shielding body (for example, a metal film) 33 is attached to the support body 30 illustrated in
The light shielding body 33 may be attached to a portion of the cover substrate 13 outside a portion facing the photoelectric conversion element 12.
In the example illustrated in
Note that a structure related to the α-ray transmission preventive film 14 and the support body 30 disclosed in
As described above, according to the imaging apparatus 10 of each of the above-described embodiments, since the image-capturing light L is incident on the photoelectric conversion element 12 after passing through the α-ray transmission preventive film 14, the image-capturing light L in a state where α rays are reduced by the α-ray transmission preventive film 14 can be made incident on the photoelectric conversion element 12.
In particular, since the α-ray transmission preventive film 14 is arranged between the cover substrate 13 and the sensor substrate 11 (in particular, the photoelectric conversion element 12), the α ray emitted from the cover substrate 13 can also be removed from the image-capturing light L by the α-ray transmission preventive film 14.
As described above, since the imaging apparatus 10 includes the α-ray transmission preventive film 14, it is possible to reduce occurrence of a white spot caused by α rays in a captured image and to suppress image quality degradation of the captured image.
Furthermore, the α-ray transmission preventive film 14 is provided in a case where the gas layer 20 is formed between the cover substrate 13 and the sensor substrate 11, which is advantageous not only for reducing occurrence of a white spot in a captured image but also for promoting height reduction of the imaging apparatus 10.
That is, by providing the α-ray transmission preventive film 14, even if a distance between the cover substrate 13 and the sensor substrate 11 is small, occurrence of a white spot caused by α rays in a captured image can be suppressed.
Then, by reducing a thickness of the gas layer 20 between the cover substrate 13 and the sensor substrate 11, a size of the entire imaging apparatus 10 in the layering direction D1 (that is, an optical axis direction) can be reduced.
Furthermore, by reducing the thickness of the gas layer 20, the cover substrate 13 and the lower lens 22 can be installed near the photoelectric conversion element 12. The cover substrate 13 and the lower lens 22 form an interface that effectively reflects light. Therefore, by reducing the thickness of the gas layer 20, a light reflection interface can be arranged near the photoelectric conversion element 12. In this case, light can be reflected at a position close to the sensor substrate 11 (in particular, the photoelectric conversion element 12), and the reflected light can be made incident on the photoelectric conversion element 12 on which the reflected light should be originally incident or the photoelectric conversion element 12 in the vicinity.
A flare (including ghost) is caused when light is incident on a photoelectric conversion element different from the photoelectric conversion element on which the light should be originally incident, due to unintended reflection or the like. In particular, when light is incident on another photoelectric conversion element away from the photoelectric conversion element on which the light should be originally incident, a flare (see a ring flare F1 and a cross flare F2) appears in a conspicuous state in a captured image as illustrated in
Whereas, by arranging the cover substrate 13 and the lower lens 22 near the photoelectric conversion element 12, it is possible to prevent reflected light from being incident on another photoelectric conversion element 12 away from the photoelectric conversion element 12 on which the reflected light should be originally incident, and to reduce a flare or make the flare less noticeable.
As described above, the imaging apparatus 10 in which the gas layer 20 and the α-ray transmission preventive film 14 are provided between the cover substrate 13 and the sensor substrate 11 is particularly advantageous to reduce a height while reducing occurrence of a white spot and a flare in a captured image and suppressing image quality degradation of the captured image.
Furthermore, by providing the lower lens 22 together with the gas layer 20 between the cover substrate 13 and the sensor substrate 11, it is possible to more effectively reduce occurrence of a flare in a captured image.
That is, an interface between the gas layer 20 and the lower lens 22 constitutes a light reflection interface having a large refractive index difference, and is located closer to the sensor substrate 11 (in particular, the photoelectric conversion element 12) than a light reflection interface constituted by the cover substrate 13. By being reflected at the interface between the gas layer 20 and the lower lens 22, the image-capturing light L unintentionally reflected by the on-chip lens 23 or the sensor substrate 11 can easily be incident more effectively on the photoelectric conversion element 12 on which the image-capturing light L should be originally incident or the photoelectric conversion element 12 in the vicinity. As a result, the flare is further reduced or becomes less noticeable in the captured image.
Furthermore, by providing the upper lens 21 and the lower lens 22, it is possible to increase an adjustment width of a chief ray angle (CRA) in the imaging apparatus 10.
That is, an optical path of the image-capturing light L can also be adjusted by the upper lens 21 and the lower lens 22. Therefore, by providing the upper lens 21 and the lower lens 22, it is possible to relax design conditions of a lens module (not illustrated) provided on an upstream side of the upper lens 21 in traveling of the image-capturing light L.
Specifically, in the lens module, it is no longer necessary to use a high-performance lens, and it is possible to use an inexpensive lens. Furthermore, the number of lenses included in the lens module can be reduced, or a thin lens can be used. Therefore, a size of the entire lens module is reduced, which is advantageous for promoting reduction in height of the entire apparatus including the lens module and the imaging apparatus 10.
Furthermore, by providing the antireflection film 15, it can be expected to suppress reflection of the image-capturing light L to prevent generation of stray light, and suppress deformation such as warpage of components of the imaging apparatus 10.
For example, while a resin material (for example, the upper lens 21 and/or the lower lens 22 containing a transparent resin) is likely to warp, the warpage of the resin material can be suppressed by attaching the antireflection film 15 to such a resin material.
Furthermore, in a case where the support body 30 is formed at a wafer level, a width and a height of the support body 30 can be adjusted with high accuracy. Furthermore, by forming the support body 30 by using a black resin or a metal film, it is possible to prevent stray light from being incident on the photoelectric conversion element 12 and to suppress occurrence of a flare in a captured image. Furthermore, moisture resistance of the support body 30 can also be improved by combining a support main body with an inorganic oxide film, a nitride film, a metal film, or the like.
In the above-described embodiment, the gas layer 20 is provided between the sensor substrate 11 and the cover substrate 13, but a light transmission layer (for example, a transparent resin) containing a low refractive index material or a high refractive index material may be provided instead of the gas layer 20.
It should be noted that the embodiments and modifications disclosed in the present description are merely exemplification in all respects and are not to be construed as limiting. The above-described embodiments and modifications can be omitted, replaced, and changed in various forms without departing from the scope and spirit of the appended claims. For example, the above-described embodiments and modifications may be combined entirely or partially, and embodiments other than the above may be combined with the above-described embodiments or modifications. Furthermore, the effects of the present disclosure described in the present description are merely exemplification, and other effects may be exhibited.
The technical category embodying the above technical idea is not limited. For example, the above-described technical idea may be embodied by a computer program for causing a computer to execute one or a plurality of procedures (steps) included in a manufacturing method or a usage method for the above-described apparatus. Furthermore, the above-described technical idea may be embodied by a computer-readable non-transitory recording medium in which such a computer program is recorded.
Note that the present disclosure can also have the following configurations.
An imaging apparatus including:
a sensor substrate having a photoelectric conversion element on which image-capturing light is incident;
a cover substrate that covers the photoelectric conversion element and transmits the image-capturing light; and
an α-ray transmission preventive film that transmits the image-capturing light.
The imaging apparatus according to Item 1, in which the α-ray transmission preventive film has a thickness of 1 μm or less.
The imaging apparatus according to Item 1 or 2, in which the α-ray transmission preventive film has a transmittance of an α ray of 0.001 count/h or less.
The imaging apparatus according to any one of Items 1 to 3, in which the α-ray transmission preventive film is arranged between the sensor substrate and the cover substrate.
The imaging apparatus according to any one of Items 1 to 4, in which the α-ray transmission preventive film is attached to the cover substrate.
The imaging apparatus according to Item 5, in which
a surface of the cover substrate on the sensor substrate side has an uneven shape, and
the α-ray transmission preventive film is attached to the surface of the cover substrate on the sensor substrate side.
The imaging apparatus according to any one of Items 1 to 6, further including an antireflection film attached to the α-ray transmission preventive film.
The imaging apparatus according to any one of Items 1 to 7, further including:
an on-chip lens that covers the photoelectric conversion element, in which
the α-ray transmission preventive film is located between the on-chip lens and the sensor substrate.
The imaging apparatus according to any one of the Items 1 to 8, further including:
an on-chip lens that covers the photoelectric conversion element, in which
the α-ray transmission preventive film is located on a side opposite to the sensor substrate via the on-chip lens.
The imaging apparatus according to any one of Items 1 to 9, further including a gas layer provided between the sensor substrate and the cover substrate.
The imaging apparatus according to any one of Items 1 to 10, further including:
a lower lens attached to a surface of the cover substrate on the sensor substrate side, in which
the lower lens faces the sensor substrate via a gas layer.
The imaging apparatus according to Item 11, further including an antireflection film attached to a surface of the lower lens on the sensor substrate side.
The imaging apparatus according to any one of Items 1 to 12, further including: an upper lens attached to a surface of the cover substrate on a side opposite to the sensor substrate; and an antireflection film attached to a surface of the upper lens on a side opposite to the cover substrate.
The imaging apparatus according to any one of Items 1 to 13, further including:
a support body that is located between the cover substrate and the sensor substrate and fixes the cover substrate to the sensor substrate, in which
the support body includes a light shielding part.
The imaging apparatus according to any one of Items 1 to 14, further including a light shielding body attached to a portion of the cover substrate outside a portion facing the photoelectric conversion element.
An imaging apparatus including:
a sensor substrate;
a cover substrate; and
a lower lens located between the sensor substrate and the cover substrate and facing the sensor substrate via a gas layer.
The imaging apparatus according to Item 16, in which the gas layer has a thickness of m or less.
The imaging apparatus according to Item 16 or 17, further including an antireflection film attached to a surface of the lower lens on the sensor substrate side.
A manufacturing method for an imaging apparatus, the manufacturing method including:
a step of preparing a first layered body including a cover substrate and an α-ray transmission preventive film;
a step of preparing a second layered body including a sensor substrate; and
a step of layering the first layered body and the second layered body such that the α-ray transmission preventive film is located between the cover substrate and the sensor substrate.
A manufacturing method for an imaging apparatus, the manufacturing method including:
a step of preparing a first layered body including a cover substrate;
a step of preparing a second layered body including a sensor substrate and an α-ray transmission preventive film; and
a step of layering the first layered body and the second layered body such that the α-ray transmission preventive film is located between the cover substrate and the sensor substrate.
A manufacturing method for an imaging apparatus, the manufacturing method including:
a step of preparing a first layered body including a cover substrate and a lower lens;
a step of preparing a second layered body including a sensor substrate; and
a step of layering the first layered body and the second layered body such that the lower lens is located between the cover substrate and the sensor substrate.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2020-219350 | Dec 2020 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2021/044629 | 12/6/2021 | WO |
