Crystal orientation

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CPC
H01L21/02433

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02433Crystal orientation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laminate, semiconductor device, and method for manufacturing laminate
- Patent number 12,154,952
- Issue date Nov 26, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi Hashigami
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor structures and manufacturing methods thereof
- Patent number 12,148,613
- Issue date Nov 19, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with semiconductor-on-insulator region and...
- Patent number 12,131,904
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon epitaxial wafer production method and silicon epitaxial wafer
- Patent number 12,119,375
- Issue date Oct 15, 2024
- Sumco Corporation
- Masayuki Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonpolar or semipolar group III-nitride substrates
- Patent number 12,106,959
- Issue date Oct 1, 2024
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, method of manufacturing the epitaxial wafer, diode...
- Patent number 12,087,868
- Issue date Sep 10, 2024
- South China Normal University
- Richard Notzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Monolayer graphene on non-polar face SiC substrate and control meth...
- Patent number 12,051,585
- Issue date Jul 30, 2024
- Tianjin University
- Lei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate substrate, freestanding substrate, method for manufacturin...
- Patent number 12,040,362
- Issue date Jul 16, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride-based high electron mobility trans...
- Patent number 12,002,880
- Issue date Jun 4, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing a substrate for a sem...
- Patent number 12,002,859
- Issue date Jun 4, 2024
- Jenoptik Optical Systems GmbH
- Jos Boschker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminate, semiconductor device, and method for manufacturing laminate
- Patent number 11,990,521
- Issue date May 21, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi Hashigami
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon epitaxial wafer production method and silicon epitaxial wafer
- Patent number 11,990,336
- Issue date May 21, 2024
- Sumco Corporation
- Masayuki Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laminate, semiconductor device, and method for manufacturing laminate
- Patent number 11,984,481
- Issue date May 14, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hiroshi Hashigami
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,967,618
- Issue date Apr 23, 2024
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor substrate, laminate, substrate selection prog...
- Patent number 11,967,617
- Issue date Apr 23, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing GaN layered substrate
- Patent number 11,967,530
- Issue date Apr 23, 2024
- Shin-Etsu Chemical Co., Ltd.
- Sumio Sekiyama
- B32 - LAYERED PRODUCTS
Information Patent Grant
SiC epitaxial wafer, production method therefor, and defect identif...
- Patent number 11,961,736
- Issue date Apr 16, 2024
- Resonac Corporation
- Ling Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240389313
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
- Publication number 20240332365
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240332011
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
- Publication number 20240332362
- Publication date Oct 3, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...
- Publication number 20240312779
- Publication date Sep 19, 2024
- FILNEX INC.
- Mitsuhiko OGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER
- Publication number 20240213022
- Publication date Jun 27, 2024
- ASM IP HOLDING B.V.
- Brendan Marozas
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...
- Publication number 20240153763
- Publication date May 9, 2024
- Massachusetts Institute of Technology
- Rachael L. Myers-Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...
- Publication number 20240096619
- Publication date Mar 21, 2024
- ASM IP HOLDING, B.V.
- Brendan Timothy Padraig Marozas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20240088284
- Publication date Mar 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...
- Publication number 20240087888
- Publication date Mar 14, 2024
- ASM IP HOLDING, B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240079486
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240071756
- Publication date Feb 29, 2024
- SUMCO CORPORATION
- Koji MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240063016
- Publication date Feb 22, 2024
- SINO NITRIDE SEMICONDUCTOR CO., LTD.
- Junjie REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SU...
- Publication number 20240020814
- Publication date Jan 18, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTO...
- Publication number 20240006257
- Publication date Jan 4, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE AND MANUFACTURING METHOD THEREFOR
- Publication number 20230402282
- Publication date Dec 14, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230395373
- Publication date Dec 7, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICE
- Publication number 20230378266
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE MADE OF CARBON SILICIDE AND METHOD OF MANUFACTURI...
- Publication number 20230369413
- Publication date Nov 16, 2023
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Julie Widiez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVELY FORMING CRYSTALLINE BORON-DOPED SILICON GERMA...
- Publication number 20230352301
- Publication date Nov 2, 2023
- ASM IP HOLDING, B.V.
- Rami Khazaka
- C30 - CRYSTAL GROWTH
Information Patent Application
Separate Epitaxy Layers for Nanowire Stack GAA Device
- Publication number 20230352551
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230352298
- Publication date Nov 2, 2023
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SUBSTRATE FOR A SEM...
- Publication number 20230352543
- Publication date Nov 2, 2023
- JENOPTIK OPTICAL SYSTEMS GMBH
- Jos BOSCHKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF
- Publication number 20230343589
- Publication date Oct 26, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEDGE-DIRECTED EPITAXY OF CONTINUOUSLY SELF-ALIGNED SINGLE-CRYSTALL...
- Publication number 20230335587
- Publication date Oct 19, 2023
- KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Vincent Chun-Chih TUNG
- H01 - BASIC ELECTRIC ELEMENTS

Crystal orientation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and a substrate for a semiconductor device

Ground substrate and method for producing same

Laminate, semiconductor device, and method for manufacturing laminate

Semiconductor structures and manufacturing methods thereof

Semiconductor structure with semiconductor-on-insulator region and...

Nitride semiconductor template, method for manufacturing nitride se...

Method of manufacturing nitride semiconductor light-emitting element

Biaxially oriented SiC composite substrate and semiconductor device...

Silicon epitaxial wafer production method and silicon epitaxial wafer

Nonpolar or semipolar group III-nitride substrates

Nitride semiconductor structure, nitride semiconductor device, and...

Epitaxial wafer, method of manufacturing the epitaxial wafer, diode...

SiC composite substrate including biaxially oreinted SiC layer and...

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a SiC substrate by simultaneously forming...

Monolayer graphene on non-polar face SiC substrate and control meth...

Manufacturing method for semiconductor silicon wafer

Laminate substrate, freestanding substrate, method for manufacturin...

Semiconductor substrate, semiconductor device, and manufacturing me...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Method for manufacturing nitride-based high electron mobility trans...

Semiconductor device and method for producing a substrate for a sem...

Laminate, semiconductor device, and method for manufacturing laminate

Silicon epitaxial wafer production method and silicon epitaxial wafer

Laminate, semiconductor device, and method for manufacturing laminate

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Crystalline oxide semiconductor film and semiconductor device

Nitride semiconductor substrate, laminate, substrate selection prog...

Method for producing GaN layered substrate

SiC epitaxial wafer, production method therefor, and defect identif...

Patents Applicationslast 30 patents

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...

LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR SUBSTRA...

METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER

SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMP...

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD OF SELECTIVELY FORMING PHOSPHOROUS-DOPED EPITAXIAL MATERIAL...

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

METHOD OF FORMING A SI-COMPRISING EPITAXIAL LAYER SELECTIVELY ON A...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE SUBSTRATE

METHOD OF USING SIC CONTAINER

HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SU...

COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTO...

SUBSTRATE AND MANUFACTURING METHOD THEREFOR

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

GATE-ALL-AROUND DEVICE

ELECTRONIC DEVICE MADE OF CARBON SILICIDE AND METHOD OF MANUFACTURI...

METHOD OF SELECTIVELY FORMING CRYSTALLINE BORON-DOPED SILICON GERMA...

Separate Epitaxy Layers for Nanowire Stack GAA Device

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SUBSTRATE FOR A SEM...

SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF

LEDGE-DIRECTED EPITAXY OF CONTINUOUSLY SELF-ALIGNED SINGLE-CRYSTALL...