The invention relates to an injector with the features of the introductory part of claim 1. During wafer production, wafers are inserted into holding devices (boats) and brought into treatment spaces (ovens), in which they are treated with gas.
The gas, with which wafers are treated, is introduced into the oven via an injector, which normally is a bent or angled tube made of quartz glass that is provided with holes.
US 2006/0185589 A1 describes an injector made of silicon for gas, which can be used during thermal treatment of semiconductor wafers. The drawings, for example FIG. 2 of US 2006/0185589 A1, show that the injector has a bore that is circular in cross-section and is formed from half-shells. The outside shape of the tube is, for example, rectangular. FIG. 11 of US 2006/0185589 A1 shows that the free end of the tube is closed and that outlet openings are provided in the tube. In the case of US 2006/0185589 A1, the injector is put together from half-shells, which is problematic in the case of the conditions under which generic injectors are used.
U.S. Pat. No. 5,943,471 A deals in particular with the evaporation of solids for a CVD method. The device that is described in U.S. Pat. No. 5,943,471 A comprises a hollow component that is connected to an injector, which communicates with an input opening and a reaction chamber, which contains the substrate. In U.S. Pat. No. 5,943,471 A, there is no information on the material of which the components of the device for the CVD method can consist.
US 2008/0286981 A1 deals with a method for treating semiconductor wafers in a process chamber, whereby titanium nitride and silicon are deposited on the wafers in situ. To this end, in the embodiments shown in FIGS. 4 and 5 of US 2008/0286981 A1, injectors by which gas is introduced are provided in the process chamber. Materials of which the injectors can consist are not disclosed. FIG. 8 from US 2008/0286981 A1 shows that injectors can have an elongated oval cross-section. In FIG. 7, it is also shown that the injectors can have lateral outlet openings. Such outlet openings are also shown in FIG. 8. US 2008/0286981 A1 does not contain any information on the material from which the injectors can be manufactured.
EP 0 582 444 A1 relates to a device for the CVD method, with which high-purity SiC is produced. The device comprises three injector tubes, whose design is shown in FIG. 3. FIG. 3 of EP 0 582 444 A1 shows that three concentric tubes, which define circular channels, are contained in the injector tubes. Only the middle channel is used for feeding gas into a chamber. The outer channels are used for the circulation of coolant. Also, EP 0 582 444 A1 does not contain any information on the material from which the injectors can be produced.
In the known injectors made of quartz glass, there is a problem in that deposits, which develop on the injector made of quartz glass because of the treatment process, detach because of thermal pressure and can impair the proper production of wafers.
Particles (flakings) develop from chipping, which particles are undesirable in the processes of the semiconductor industry.
The object of the invention is to make available an injector that does not cause the above-described problems.
This object is achieved according to the invention with an injector, which has the features of claim 1.
Preferred and advantageous configurations of the injector according to the invention are the subject matter of the subclaims.
Since the injector according to the invention is designed as a tube made of silicon, no thermal stresses that could cause the flaking off of deposits (flakings) are produced. Moreover, the forming of deposits is prevented or at least reduced with the injector according to the invention.
The design, according to the invention, of the tube that forms the injector makes it possible for the injector to consist of multiple pieces of tube, whereby smooth or profiled front surfaces of the pieces of tube are present preferably on the points of joint, which pieces of tube are connected to one another by a crystallization method and/or mechanically to form a tube that forms an injector.
The injector that consists of silicon according to the invention is not necessarily a straight tube. Rather, the injector according to the invention can also be a bent or angled tube.
In order to impart to the injector that is made of silicon according to the invention adequate mechanical stability for its use in an oven for treating wafers with treatment gas, even at elevated temperatures, the profile of the injector is other than round in an exemplary embodiment.
For example, the profile of the injector, in particular in cross-section, can be made rectangular, elongated oval, triangular or star-shaped.
The preferred design of the injector according to the invention with its non-round, i.e., non-circular, profile makes it possible to provide in the injector more than one hollow space (channel) for the feeding of gas for the treatment of the wafer. Two channels have the advantage that various gases can be fed alternately. If one of the channels is blocked, the other channel can be used to feed gas into the furnace for treating wafers, which are inserted into boats.
Here, the term “profile” defines the outer shape of the tube that is used as an injector according to the invention.
The term “non-round” used here comprises all profiles that are not circular in cross-section.
Additional details and features of the invention follow from the description below of preferred embodiments based on the drawings. Here:
An injector 1 according to the invention, which is manufactured from silicon, is designed as tube 2, which can be straight, bent or angled (e.g., angled by 85-95°).
In the embodiment of an injector 1 made of silicon that is shown in
In the embodiment shown in
In
Within the scope of the invention, consideration is given to forming the tube 2 that forms injector 1 from at least two pieces of tube 10.
The end surfaces (front surfaces) of the pieces of tube 10 can be made smooth or profiled. The connection of pieces of tube 10 to one another can be carried out mechanically and/or, if necessary, for example, by a crystallization method.
Some advantageous embodiments for the purpose of increasing mechanical connecting stability are stages or digital designs in the profile of the wall or in the profile of the entire piece of tube 10. Also, a threaded connection of pieces of tube 10 is possible.
The pieces of tube 10 of
In a longitudinal section,
In the case of the tube 2 that consists of two pieces of tube 10, shown in
The pieces of tube 10 of the embodiment shown in
In the embodiment shown in
The pieces of tube 10 of the embodiment shown in
The embodiment shown in
In the embodiment shown in
Although the pieces of tube 10 shown in
Even in the case of pieces of tube 10 that engage in one another in a positive manner (
When using an injector 1 made of silicon according to the invention in processes in which gas is introduced for treatment into a process chamber, in particular in semiconductor technology in the course of the production of chip-containing wafers, the problem of particles developing (flaking) no longer arises—other than in the case of known injectors made of quartz glass.
In particular, it has already turned out to be advantageous that when using injectors 1 according to the invention, fewer contaminants and less particle formation occur.
Another advantage of the injector 1 according to the invention is its extended time of use and in addition the fact that the treatment process is cleaner.
The stability of the injector 1 is increased by the preferred outer shape of the profile of the tube 2 that is used as injector 1 and that is not circular.
As already mentioned and shown in, for example,
Although not shown in the drawings, the outlet openings for the gas (process gas) that are also common in the case of injectors made of quartz glass are provided in the tubes 2 that are used as injectors 1 according to the invention.
In summary, an embodiment of the invention can be described as follows:
An injector 1, which is manufactured from silicon and which makes it possible to introduce gas into process chambers in processes, in particular processes in semiconductor technology, is proposed. The injector 1 is designed as tube 2, which optionally consists of at least two pieces of tube 10, in which outlet openings are provided for the gas to be brought into the process chamber. At least one channel 4 is provided in the tube 2, which is used as injector 1. The profile of the tube 2 that is used as injector 1 is non-round, thus deviates from a circular profile, whereby consideration is given to elongated, triangular or star-shaped profile shapes.
Number | Date | Country | Kind |
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A 815/2015 | Dec 2015 | AT | national |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2016/081788 | 12/19/2016 | WO | 00 |