Claims
- 1. An improved method of fabricating a semiconductor device having therein a plurality of layers, said semiconductor device having a substrate upon which said layers are operably deposited, said substrate consisting of Group III-V elements, wherein the improvement comprises the steps of:
- forming a growth melt of Group III, V and VI elements by liquid phase epitaxy;
- homogenizing said growth melt;
- forming a Group III wipe solution;
- wiping said substrate with said wipe solution;
- placing said substrate after being wiped in contact with said growth melt;
- depositing on said substrate a doped protective layer from said growth melt for preventing the dissociation of said substrate;
- removing from said growth melt said substrate with said doped protective layer thereon; and
- removing said substrate having said protective layer thereon from a growth furnace whereby said protective layer allows surface preparation for forming said semiconductor device thereafter.
- 2. A method as defined in claim 1 wherein said growth melt consists of indium, phosphorus, and tellurium.
- 3. A method as defined in claim 2 wherein the concentration of said tellurium ranges from about high 10.sup.18 to low 10.sup.19 atoms per cubic centimeter in said protective layer.
- 4. A method as defined in claim 1 wherein said homogenizing occurs at a temperature of about 665.degree. C. for a period of about an hour.
- 5. A method as defined in claim 1 wherein said depositing of said doped protective layer is by supercooling in a temperature range of about 645.degree. C. to about 635.degree. C., said temperature lowered at a rate of about 0.3.degree. C./min.
- 6. A method as defined in claim 1 wherein said homogenizing and depositing occur in a temperature range of about 665.degree. C. to 635.degree. C. for a period of about two hours.
Parent Case Info
This is a division of application Ser. No. 384,291 filed June 2, 1982, now abandoned.
STATEMENT OF GOVERNMENT INTEREST
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalty thereon.
US Referenced Citations (9)
Divisions (1)
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Number |
Date |
Country |
Parent |
384291 |
Jun 1982 |
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