Claims
- 1. An integrated circuit on a substrate having a surface with at least one conductive layer comprising:
a conductive layer deposited on a semiconducting layer, at least one dielectric layer having at least one opening extending through said dielectric layer to expose at least a part of said conductive layer, and a carbide-silicon layer being formed at least on said conductive layer and being positioned between said dielectric layer and said conductive layer adjacent to said exposed part of said conductive layer.
- 2. The integrated circuit as recited in claim 1, wherein said conductive layer is a silicide layer.
- 3. The integrated circuit as recited in claim 1, wherein said silicide is a compound comprising silicon and at least one of the group consisting of Co, Ti, Ta, Co, Mb, Ni, Pt and W.
- 4. The integrated circuit as recited in claim 1, wherein said conductive layer is one of the group consisting of a polysilicon layer and an amorphous silicon layer.
- 5. The integrated circuit as recited in claim 1, wherein said semiconducting layer is one of the group consisting of a silicon layer, a Ga As layer, a Ge layer and a SiGe layer.
- 6. The integrated circuit as recited in claim 1, wherein said carbide-silicon layer comprises at least one of the group consisting of silicon carbide, silicon oxycarbide, nitrided silicon carbide, nitrided silicon oxycarbide, hydrogenated silicon carbide, hydrogenated silicon oxycarbide, hydrogenated nitrided silicon carbide and hydrogenated nitrided silicon oxycarbide.
- 7. The integrated circuit as recited in claim 1, wherein said oxide-silicon layer comprises at least one of the group consisting of silicon dioxide, silicon dioxide with a smaller fraction of C, silicon dioxide with a smaller fraction of N and C, silicon dioxide with a smaller fraction of N, hydrogenated silicon dioxide, hydrogenated silicon dioxide with a smaller fraction of C, hydrogenated silicon dioxide with a smaller fraction of N and C and hydrogenated silicon dioxide with a smaller fraction of N.
- 8. The integrated circuit as recited in claim 2, wherein said semiconducting layer is one of the group consisting of a silicon layer, a Ga As layer, a Ge layer and a SiGe layer.
- 9. The integrated circuit as recited in claim 3, wherein said semiconducting layer is one of the group consisting of a silicon layer, a Ga As layer, a Ge layer and a SiGe layer.
- 10. The integrated circuit as recited in claim 4, wherein said semiconducting layer is one of the group consisting of a silicon layer, a Ga As layer, a Ge layer and a SiGe layer.
- 11. The integrated circuit as recited in claim 2, wherein said carbide-silicon layer comprises at least one of the group consisting of silicon carbide, silicon oxycarbide, nitrided silicon carbide, nitrided silicon oxycarbide, hydrogenated silicon carbide, hydrogenated silicon oxycarbide, hydrogenated nitrided silicon carbide and hydrogenated nitrided silicon oxycarbide.
- 12. The integrated circuit as recited in claim 3, wherein said carbide-silicon layer comprises at least one of the group consisting of silicon carbide, silicon oxycarbide, nitrided silicon carbide, nitrided silicon oxycarbide, hydrogenated silicon carbide, hydrogenated silicon oxycarbide, hydrogenated nitrided silicon carbide and hydrogenated nitrided silicon oxycarbide.
- 13. The integrated circuit as recited in claim 4, wherein said carbide-silicon layer comprises at least one of the group consisting of silicon carbide, silicon oxycarbide, nitrided silicon carbide, nitrided silicon oxycarbide, hydrogenated silicon carbide, hydrogenated silicon oxycarbide, hydrogenated nitrided silicon carbide and hydrogenated nitrided silicon oxycarbide.
- 14. The integrated circuit as recited in claim 5, wherein said carbide-silicon layer comprises at least one of the group consisting of silicon carbide, silicon oxycarbide, nitrided silicon carbide, nitrided silicon oxycarbide, hydrogenated silicon carbide, hydrogenated silicon oxycarbide, hydrogenated nitrided silicon carbide and hydrogenated nitrided silicon oxycarbide.
- 15. The integrated circuit as recited in claim 2, wherein said oxide-silicon layer comprises at least one of the group consisting of silicon dioxide, silicon dioxide with a smaller fraction of C, silicon dioxide with a smaller fraction of N and C, silicon dioxide with a smaller fraction of N, hydrogenated silicon dioxide, hydrogenated silicon dioxide with a smaller fraction of C, hydrogenated silicon dioxide with a smaller fraction of N and C and hydrogenated silicon dioxide with a smaller fraction of N.
- 16. The integrated circuit as recited in claim 3, wherein said oxide-silicon layer comprises at least one of the group consisting of silicon dioxide, silicon dioxide with a smaller fraction of C, silicon dioxide with a smaller fraction of N and C, silicon dioxide with a smaller fraction of N, hydrogenated silicon dioxide, hydrogenated silicon dioxide with a smaller fraction of C, hydrogenated silicon dioxide with a smaller fraction of N and C and hydrogenated silicon dioxide with a smaller fraction of N.
- 17. The integrated circuit as recited in claim 4, wherein said oxide-silicon layer comprises at least one of the group consisting of silicon dioxide, silicon dioxide with a smaller fraction of C, silicon dioxide with a smaller fraction of N and C, silicon dioxide with a smaller fraction of N, hydrogenated silicon dioxide, hydrogenated silicon dioxide with a smaller fraction of C, hydrogenated silicon dioxide with a smaller fraction of N and C and hydrogenated silicon dioxide with a smaller fraction of N.
- 18. The integrated circuit as recited in claim 5, wherein said oxide-silicon layer comprises at least one of the group consisting of silicon dioxide, silicon dioxide with a smaller fraction of C, silicon dioxide with a smaller fraction of N and C, silicon dioxide with a smaller fraction of N, hydrogenated silicon dioxide, hydrogenated silicon dioxide with a smaller fraction of C, hydrogenated silicon dioxide with a smaller fraction of N and C and hydrogenated silicon dioxide with a smaller fraction of N.
- 19. The integrated circuit as recited in claim 6, wherein said oxide-silicon layer comprises at least one of the group consisting of silicon dioxide, silicon dioxide with a smaller fraction of C, silicon dioxide with a smaller fraction of N and C, silicon dioxide with a smaller fraction of N, hydrogenated silicon dioxide, hydrogenated silicon dioxide with a smaller fraction of C, hydrogenated silicon dioxide with a smaller fraction of N and C and hydrogenated silicon dioxide with a smaller fraction of N.
CROSS REFERENCES TO RELATED APPLICATIONS
[0001] The present application is a divisional of, and claims priority to U.S. Non-Provisional 09/980,769, filed on Nov. 1, 2001, and entitled “METHOD FOR REMOVAL OF SIC,” currently pending, which is a U.S. national stage filing under 35 USC 371 and claims priority from PCT Application PCT/BE/00/00045, entitled “METHOD FOR REMOVAL OF SIC,” filed on Apr. 28, 2000, which claims priority from U.S. Provisional Patent Application No. 60/132,284 also entitled “METHOD FOR REMOVAL OF SIC,” filed on May 3, 1999. The above identified applications are incorporated by reference in their entirety.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60132284 |
May 1999 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09980769 |
Feb 2002 |
US |
Child |
10359403 |
Feb 2003 |
US |