Lightly donor doped electrodes for high-dielectric-constant materials

Information

  • Patent Grant
  • 6204069
  • Patent Number
    6,204,069
  • Date Filed
    Monday, October 3, 1994
    30 years ago
  • Date Issued
    Tuesday, March 20, 2001
    23 years ago
Abstract
A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions. The lightly donor doped perovskite can be deposited and etched by effectively the same techniques that are developed for the high-dielectric-constant material. The same equipment may used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
Description




FIELD OF THE INVENTION




This invention generally relates to improving electrical connections to materials with high-dielectric-constants, such as in the construction of capacitors.




BACKGROUND OF THE INVENTION




Without limiting the scope of the invention, its background is described in connection with current methods of forming electrical connections to high-dielectric-constant materials, as an example.




The increasing density of integrated circuits (e.g. DRAMs) is increasing the need for materials with high-dielectric-constants to be used in electrical devices such as capacitors. The current method generally utilized to achieve higher capacitance per unit area is to increase the surface area/unit area by increasing the topography, such as in trench and stack capacitors using SiO


2


or SiO


2


/Si


3


N


4


as the dielectric. This approach becomes very difficult in terms of manufacturability for devices such as the 256 Mbit and 1 Gbit DRAMs.




An alternative approach is to use a high permittivity dielectric material. Many perovskite, ferroelectric, or high-dielectric-constant (hereafter abbreviated HDC) materials such as (Ba,Sr)TiO


3


(BST) usually have much larger capacitance densities than standard SiO


2


—Si


3


N


4


—SiO


2


capacitors. Various metals and metallic compounds, and typically noble metals such as Pt and conductive oxides such as RuO


2


, have been proposed as the electrodes for these HDC materials. To be useful in electronic devices, however, reliable electrical connections should generally be constructed which do not diminish the beneficial properties of these high-dielectric-constant materials.




SUMMARY OF THE INVENTION




As used herein the term high-dielectric-constant means a dielectric constant greater than about 150. The deposition of an HDC material usually occurs at high temperature (generally greater than about 500° C.) in an oxygen containing atmosphere. The lower electrode structure should be stable during this deposition, and both the lower and upper electrode structures should be stable after this deposition. There are several problems with the materials thus far chosen for the lower electrode in thin-film (generally less than 5 um) applications; many of these problems are related to semiconductor process integration. For example, Ru is generally not a standard integrated circuit manufacturing material, and it is also relatively toxic. Pt has several problems as a lower electrode which hinder it being used alone. Pt generally allows oxygen to diffuse through it and hence typically allows neighboring materials to oxidize. Pt also does not normally stick very well to traditional dielectrics such as SiO


2


or Si


3


N


4


, and Pt can rapidly form a silicide at low temperatures. A Ta layer has been used as a sticking or buffer layer under the Pt electrode, however during BST deposition, oxygen can diffuse through the Pt and oxidize the Ta and make the Ta less conductive. This may possibly be acceptable for structures in which contact is made directly to the Pt layer instead of to the Ta layer, but there are other associated problems as described hereinbelow.




Other structures which have been proposed include alloys of Pt, Pd, Rh as the electrode and oxides made of Re, Os, Rh and Ir as the sticking layer on single crystal Si or poly-Si. A problem with these electrodes is that these oxides are generally not stable next to Si and that these metals typically rapidly form silicides at low temperatures (generally less than about 450° C.).




One difficulty with the previous solutions is that they generally utilize materials (e.g. Ru) which are unusual in a semiconductor fab. Another difficulty is that a relatively good dry etch for Pt or Ruo


2


does not yet exist. As another example, there currently does not exist a commercial chemical vapor deposition process for Pt or Ru. In addition, Pt is normally a fast diffuser in Si and therefore can cause other problems. Also, most of the proposed electrode structures require several additional process steps which can be uneconomical. For example, there currently does not exist a commercial chemical vapor deposition process for Pt or Ru, nor a commercial dry etch for RuO


2


.




Generally, the instant invention uses a lightly donor doped perovskite as the electrode in a thin-film microelectronic structure. An electrode buffer layer may also be used as a sticking layer and/or diffusion barrier and/or electrical connection, if needed. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The bulk resistivity of a typical lightly doped perovskite such as BaTiO


3


is generally between about 10 to 100 ohm-cm. Also, this resistivity may be further decreased if the perovskite is exposed to reducing conditions. Conversely, the perovskite can achieve a high resistivity (about 10


10


-


10




14


ohm-cm) for large donor concentrations. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). There exists a large number of perovskite, perovskite-like, ferroelectric or HDC oxides that can become conductive with light donor doping.




The deposition of the lightly donor doped perovskite lower electrode may be performed in a slightly reducing atmosphere in order to minimize the oxidation of the layer(s) underneath it. The subsequent deposition of the HDC dielectric material can require very oxidizing conditions, and the lightly donor doped perovskite lower electrode slows the oxidation rate of the layer(s) underneath it, thus inhibiting the formation of a substantially oxidized continuous resistive contact layer. Another benefit of this electrode system is that the lightly donor doped perovskite lower electrode does little or no reduction of the HDC dielectric material.




The disclosed structures generally provide electrical connection to HDC materials while eliminating many of the disadvantages of the current structures. One embodiment of this invention comprises a conductive lightly donor doped perovskite layer, and a high-dielectric-constant material layer overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A method of forming an embodiment of this invention comprises the steps of forming a conductive lightly donor doped perovskite layer, and forming a high-dielectric-constant material layer on the conductive lightly donor doped perovskite layer.




These are apparently the first thin-film structures wherein an electrical connection to high-dielectric-constant materials comprises a conductive lightly donor doped perovskite. Lightly donor doped perovskite can generally be deposited and etched by effectively the same techniques that are developed for the dielectric. The same equipment may be used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.











BRIEF DESCRIPTION OF THE DRAWINGS




The novel features believed characteristic of the invention are set forth in the appended claims. The invention itself, however, as well as other features and advantages thereof, will be best understood by reference to the detailed description which follows, read in conjunction with the accompanying drawings, wherein:





FIG. 1

is a graph depicting the effect of La donor doping on the room-temperature conductivity and the grain size of BaTiO


3


;





FIGS. 2

,


3


,


4


,


5


, and


6


are cross-sectional views of a method for constructing a capacitor with a lightly donor doped perovskite lower electrode on a semiconductor substrate;





FIG. 7

is a cross-sectional view of a high-dielectric-constant material formed on a lightly donor doped perovskite; and





FIGS. 8

,


9


, and


10


are cross-sectional views of capacitors with lightly donor doped perovskite lower electrodes formed on the surface of a semiconductor substrate.











DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS




With reference to

FIG. 1

, there is shown a graph depicting the effect of La donor doping on the room-temperature conductivity and the grain size of bulk BaTiO


3


(BT). BT is generally considered to be a model perovskite material, and similar perovskites such as SrTiO


3


(ST) and (Ba,Sr)TiO


3


should behave similarly. The bulk resistivity of the lightly donor doped perovskite is generally between about 10 to 100 ohm-cm. Also, this resistivity may be further decreased if the perovskite is exposed to reducing conditions. The perovskite can also achieve a high resistivity (about 10


10


to 10


14


ohm-cm) for large donor concentrations. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition).




As used herein, the term “lightly”, when used in reference to doping of a perovskite, means a level of doping which produces a substantially lower resistivity than that of an undoped version of the perovskite (e.g. a doping between about 0.01 and about 0.3 mole percent). Generally such lower resistivity is also substantially lower than the resistivity of a heavily doped version of the perovskite. Donor doping, as known in the art, is generally the substitution of atoms on lattice sites which, due to the higher valence of the substituting atoms (as compared to the valence of the atoms being replaced), results in free electrons.




With reference to

FIGS. 2-6

, there is shown a method of forming a preferred embodiment of this invention, a capacitor comprising a high-dielectric-constant material and a lightly donor doped perovskite lower electrode.

FIG. 2

illustrates a silicon semiconductor substrate


30


.

FIG. 3

illustrates an SiO


2


insulating layer


32


formed on the surface of the silicon substrate


30


.

FIG. 4

illustrates a lightly La donor doped BST layer


34


deposited on the SiO


2


layer


32


. This lightly La donor doped BST layer


34


is conductive and will serve as the lower electrode for the high-dielectric-constant capacitor.

FIG. 5

illustrates the capacitor dielectric, a layer of undoped high-dielectric-constant BST


36


, deposited on the lightly La donor doped BST layer


34


. Although undoped BST may be used for the capacitor dielectric, acceptor doped or heavily donor doped BST may also be used to provide a high-dielectric-constant.

FIG. 6

illustrates the TiN upper electrode


38


deposited on the undoped BST layer


36


. TiN is generally a good sticking layer and diffusion barrier, in addition to being conductive. Alternatively, another layer of lightly La donor doped BST could be used instead of TiN for the upper electrode


38


.




In an alternate embodiment,

FIG. 7

illustrates a layer of undoped high-dielectric-constant BST


36


deposited on a lightly La donor doped BST layer


34


. The lightly La donor doped BST layer


34


provides a chemically and structurally stable electrical connection to the undoped high-dielectric-constant BST layer


36


.




In another alternate embodiment,

FIG. 8

illustrates a high-dielectric-constant capacitor utilizing a lightly donor doped perovskite electrode. The TiN upper electrode


38


overlays the undoped BST layer


36


, which in turn overlays the lightly La donor doped BST lower electrode


34


. However, the lightly La donor doped BST


34


is not formed directly on the first SiO


2


insulating layer


32


, but is instead shown formed on a TiN electrode buffer layer


42


. The TiN electrode buffer layer


42


is used as a sticking layer and diffusion barrier for silicon, oxygen and impurities in the high-dielectric-constant BST layer


36


. Other materials such as RuO


2


/Ru can also be used instead of TiN for that purpose. For example, Ru metal could be deposited, and would for the most part form RuO


2


during the deposition of the lightly La donor doped BST layer


34


or of the undoped high-dielectric-constant BST layer


36


. In this embodiment the TiN electrode buffer layer


42


is not used for direct electrical connection since electrical contact is made directly to the lightly La donor doped BST layer


34


from above, via a conductive tungsten plug


46


. The tungsten plug


46


makes electrical contact to the aluminum top metallization


48


through the second SiO


2


insulating layer


44


. The two other tungsten plugs


46


make electrical contact from the aluminum top metallization layer


48


to the TiN upper electrode


38


and to the doped silicon region


40


.




In another alternate embodiment,

FIG. 9

illustrates a high-dielectric-constant capacitor utilizing a lightly donor doped perovskite electrode. As in

FIG. 8

, the lightly La donor doped BST lower electrode


34


is again formed on a TiN electrode buffer layer


42


. However, in

FIG. 9

, the TiN electrode buffer layer


42


provides electrical connection to the doped silicon region


40


below it. TiN also works relatively well in this embodiment because it must undergo substantial oxidation before it forms an insulating titanium oxide. For example, TiON and TiO are conductive, although TiO


2


is insulating.




The deposition of the lightly La donor doped BST lower electrode


34


is preferably performed in a slightly reducing atmosphere when utilizing the TiN lower electrode buffer layer


42


in order to minimize the oxidation of the TiN. The deposition of the undoped high-dielectric-constant BST layer


36


generally requires very oxidizing conditions and the lightly La donor doped BST lower electrode


34


will significantly slow the oxidation rate of the TiN electrode buffer layer


42


, thus inhibiting the formation of a substantially oxidized continuous resistive contact layer. Another benefit of this electrode system is that the lightly donor doped BST lower electrode does little, if any, reduction the undoped BST layer


36


.




In yet another alternate embodiment,

FIG. 10

illustrates a high-dielectric-constant capacitor utilizing a lightly donor doped perovskite electrode. As in

FIG. 9

, the TiN electrode buffer layer


42


is used for electrical contact. However, in

FIG. 10

, the TiN electrode buffer layer


42


connects to the doped silicon region


40


via a tungsten plug


50


.




Alternatively, the tungsten (or TiN) plug


50


in

FIG. 10

could also be used to connect directly to the lightly La donor doped BST lower electrode


34


, if the TiN electrode buffer layer


42


were not used. However, this would generally utilize the lightly La donor doped BST lower electrode


34


as an oxygen diffusion barrier and hence may not protect the tungsten plug


50


under all possible oxidizing conditions.




The sole Table, below, provides an overview of some embodiments and the drawings.















TABLE











Preferred or







Drawing




Generic




Specific




Other Alternate






Element




Term




Examples




Examples











30




Substrate




Silicon




Other single component









semiconductors









(e.g. germanium, diamond)









Compound semiconductors









(e.g. GaAs, InP, Si/Ge,









SiC)









Ceramic substrates






32




First level




Silicon dioxide




Other insulators







insulator





(e.g. silicon nitride)






34




Lower




0.1 to 0.2




0.01 to 0.29 mol % La







electrode




mol % La




doped barium strontium








doped barium




titanate








strontium




Other lightly donor (e.g. F,








titanate




Cl, V, Nb, Mo, La, Ce, Pr,









Nd, Sm, Eu, Gd, Tb, Dy,









Ho, Er, Ta, W) doped









perovskite, ferroelectric, or









high-dielectric-constant









oxides









(e.g. (Ba,Sr,Pb)(Ti,Zr)O


3


,









bismuth titanate,









potassium tantalate, lead









niobate, potassium









niobate, lead zinc niobate,









lead magnesium niobate)






36




High-




Undoped




Other undoped perovskite,







dielectric-




barium




ferroelectric, or high-







constant




strontium




dielectric-constant oxides







material




titanate




(e.g. (Ba,Sr,Pb)(Ti,Zr)O


3


,









(Pb,La)(Zr,Ti)O


3


, bismuth









titanate, potassium









tantalate, lead niobate,









potassium niobate, lead









zinc niobate, lead









magnesium niobate)









Acceptor (e.g. Na, Al, Mn,









Ca, K, Cr, Mn, Co, Ni, Cu,









Zn, Li, Mg) and/or heavily









(generally greater than









0.25 mol %) donor (e.g. F,









Cl, V, Nb, Mo, La, Ce, Pr,









Nd, Sm, Eu, Gd, Tb, Dy,









Ho, Er, Ta, W) doped









perovskite, ferroelectric, or









high-dielectric-constant









oxides









(e.g. (Ba,Sr,Pb)(Ti,Zr)O


3


,









bismuth titanate,









potassium tantalate, lead









niobate, potassium









niobate, lead zinc niobate,









lead magnesium niobate)






38




Upper




Titanium




Other conductive metal







electrode




nitride




compounds









(e.g. nitrides: ruthenium









nitride, tin nitride,









zirconium nitride; oxides:









ruthenium dioxide, tin









oxide, titanium monoxide)









Noble metals









(e.g. platinum, palladium,









rhodium, gold, iridium,









silver)









May be same materials as









those listed for Drawing









Element 34 above









Other common









semiconductor electrodes









(e.g. silicides, aluminum)









May contain more than









one layer






40




Conductive




Doped silicon




Semiconductor devices







semiconductor







material






42




Electrode




Titanium




Other conductive metal







buffer layer




nitride




compounds









(e.g. nitrides: ruthenium









nitride, tin nitride,









zirconium nitride; oxides:









ruthenium dioxide, tin









oxide, titanium monoxide,









TiON









silicides: titanium silicide)









Combinations of above









mentioned materials









(e.g. TiN/TiO/TiON,









TiN/TiSi, Ru/RuO/RuO


2


)









Other high temperature









conductive diffusion









barriers









This layer may or may not









be used






44




Second level




Silicon dioxide




Other insulators







insulator





(e.g. silicon nitride)






46




Conductive




Tungsten




Other reactive metals







plug





(e.g. tantalum, titanium,









molybdenum)









Reactive metal compounds









(e.g. nitrides: titanium









nitride, zirconium nitride;









silicides: titanium silicide,









tantalum silicide, tungsten









silicide, molybdenum









silicide, nickel silicide;









carbides: tantalum









carbide; borides: titanium









boride)









Conductive carbides and









borides









(e.g. boron carbide)









Aluminum, copper









Single component









semiconductors









(e.g. single crystalline and









polycrystalline silicon,









germanium)









Compound semiconductors









(e.g. GaAs, InP, Si/Ge,









SiC)






48




Top




Aluminum




Other common







metallization





semiconductor electrodes









(e.g. silicides, TiN)









Two or more layers of









metal and dielectric






50




Capacitor




Tungsten




Other reactive metals







plug





(e.g. tantalum, titanium,









molybdenum)









Reactive metal compounds









(e.g. nitrides: titanium









nitride, zirconium nitride;









silicides: titanium silicide,









tantalum silicide, tungsten









silicide, molybdenum









silicide, nickel silicide;









carbides: tantalum









carbide; borides: titanium









boride)









Conductive carbides and









borides









(e.g. boron carbide)









Aluminum, copper









Single component









semiconductors









(e.g. single crystalline and









polycrystalline silicon,









germanium)









Compound semiconductors









(e.g. GaAs, InP, Si/Ge,









SiC)














A few preferred embodiments have been described in detail hereinabove. It is to be understood that the scope of the invention also comprehends embodiments different from those described, yet within the scope of the claims. With reference to the structures described, electrical connections to such structures can be ohmic, rectifying, capacitive, direct or indirect, via intervening circuits or otherwise. Implementation is contemplated in discrete components or fully integrated circuits in silicon, germanium, gallium arsenide, or other electronic materials families. In general the preferred or specific examples are preferred over the other alternate examples.




While this invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims encompass any such modifications or embodiments.



Claims
  • 1. A method of forming a microelectronic capacitor structure on an integrated circuit, said method comprising:(a) forming a semiconductor substrate; (b) forming an electrically conductive buffer layer on said semiconductor substrate; (c) forming a conductive donor doped perovskite layer having between about 0.01 and about 0.3 mole percent doping on said buffer layer; and (d) forming a high-dielectric-constant material layer on said perovskite layer, whereby said donor doped perovskite layer provides a chemically and structurally stable electrical connection to said high-dielectric-constant material layer.
  • 2. The method according to claim 1, wherein said perovskite is selected from the group consisting of: (Ba,Sr,Pb)(Ti,Zr)O3, bismuth titanate, potassium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
  • 3. The method according to claim 1, wherein said donor is selected from the group consisting of: F, Cl, V, Nb, Mo, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Ta, W, and combinations thereof.
  • 4. The method according to claim 1, wherein said high-dielectric-constant material layer is selected from the group consisting of: (Ba,Sr,Pb)(Ti,Zr)O3, (Pb,La)(Zr,Ti)O3, bismuth titanate, potassium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
  • 5. The method according to claim 1, wherein said electrically conductive buffer layer is selected from the group consisting of: platinum, palladium, rhodium, gold, iridium, silver, ruthenium, titanium nitride, tin nitride, ruthenium nitride, zirconium nitride, ruthenium monoxide, ruthenium dioxide, tin oxide, titanium monoxide, TiON, titanium silicide, and combinations thereof.
  • 6. The method according to claim 1, said method further comprising forming an electrically conductive layer on said high-dielectric-constant material layer.
  • 7. The method according to claim 6, wherein said electrically conductive layer is selected from the group consisting of platinum, palladium, rhodium, gold, iridium, silver, titanium nitride, tin nitride, ruthenium nitride, zirconium nitride, ruthenium dioxide, tin oxide, titanium monoxide, titanium silicide, aluminum, and combinations thereof.
  • 8. The method according to claim 6, wherein said electrically conductive layer is a second donor doped second perovskite having between about 0.01 and about 0.3 mole percent doping.
  • 9. The method according to claim 8, wherein said second perovskite is selected from the group consisting of: (Ba,Sr,Pb)(Ti,Zr)O3, bismuth titanate, potassium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
  • 10. The method according to claim 8, wherein said second donor is selected from the group consisting of: F, Cl, V, Nb, Mo, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Ta, W, and combinations thereof.
  • 11. The method according to claim 1, wherein said donor doped perovskite layer is doped between 0.1 and 0.2 mole percent.
  • 12. The method according to claim 1, wherein said donor doped perovskite layer is doped between 0.01 and 0.29 mole percent.
  • 13. The method according to claim 1, wherein said high-dielectric constant material layer is undoped.
  • 14. The method according to claim 1, wherein said high-dielectric constant material layer is doped with an acceptor material selected from the group consisting of: Na, Al, Mn, Ca, K, Cr, Mn, Co, Ni, Cu, Zn, Li, Mg, and combinations thereof.
  • 15. The method according to claim 14, wherein said high-dielectric constant material layer is doped to greater than about 0.25 mole percent doping with a donor material selected from the group consisting of: F, Cl, V, Nb, Mo, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Ta, W, and combinations thereof.
  • 16. The method according to claim 1, wherein said high-dielectric constant material layer is doped to greater than about 0.25 mole percent doping with a donor material selected from the group consisting of: F, Cl, V, Nb, Mo, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Ta, W, and combinations thereof.
Parent Case Info

This application is a Continuation of application Ser. No. 08/040,946, filed Mar. 31, 1993 now abandoned.

US Referenced Citations (12)
Number Name Date Kind
3268783 Saburi Aug 1966
3305304 Koiser et al. Feb 1967
3569802 Brauer Mar 1971
4131903 Schmelz et al. Dec 1978
4149173 Schmelz et al. Apr 1979
5003428 Shepherd Mar 1991
5053917 Miyaskea et al. Oct 1991
5155658 Imam et al. Oct 1992
5162294 Telvecchio et al. Nov 1992
5198269 Swartz et al. Mar 1993
5206213 Lyomo et al. Apr 1993
5262920 Sakuma et al. Nov 1993
Foreign Referenced Citations (1)
Number Date Country
A2 2 337 373 Nov 1989 EP
Non-Patent Literature Citations (7)
Entry
C. J. Peng and H. Y. Lu, “Compensation Effect in Semiconducting Barium Titanate,” J. Am. Ceram. Soc., 71 C44-C46 (1988).
N. Parikh, et al., “Study of Diffusion Barriers for PZT Deposited on Si for Non-Volatile Random-Access Memory Technology,” Mat. Res. Soc. Symp. Proc., vol. 200, 1990, pp. 193-198.
A. F. Tasch, Jr. and L. H. Parker, “Memory Cell and Technology Issues for 64 and 256-Mbit One-Transistor Cell MOS DRAMs,” Proceedings of the IEEE, vol. 77, No. 3, Mar. 1989, pp. 374-388.
K. Koyama, et al., “A Stacked Capacitor with (BaxSr1x)TiO3 For 256b M DRAM,” IEDM, 91, 823-826 (1991).
T. Sakuma, et al., “Barrier Layers for Realization of High Capacitance Density in SrTiO3 Thin-Film Capacitor on Silicon,” Appl. Phys. Lett., 57 (23), Dec. 3, 1990, pgs. 2431-2433.
K. Takemura, et al., “Barrier Mechanism of Pt/Ta and Pt/Ti Layers for SrTiO3 Thin Film Capacitors on Si,” 4th Inter. Symp. on Integrated Ferroelectrics, C52 (1992).
Kenji Uchino, “Electrodes for Piezoelectric Actuators [Atuden Akuchueita-yo Denkyoku] Ceramics”, Ceramics Japan, vol. 21, No. 3, 1986, pp. 229-236.
Continuations (1)
Number Date Country
Parent 08/040946 Mar 1993 US
Child 08/317108 US