Plural dopants of same conductivity type in same region

Industry

CPC
Y10S257/917

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

Current Industry

Y10S257/917Plural dopants of same conductivity type in same region

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a high-breakdown voltage MOS transistor
- Patent number 7,777,294
- Issue date Aug 17, 2010
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,030,464
- Issue date Apr 18, 2006
- NEC Electronics Corporation
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a high-breakdown voltage MOS transistor
- Patent number 7,002,210
- Issue date Feb 21, 2006
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low capacitance ESD-protection structure under a bond pad
- Patent number 7,002,218
- Issue date Feb 21, 2006
- Microchip Technology Incorporated
- Randy L. Yach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded LDD implant process for sub-half-micron MOS devices
- Patent number 6,858,507
- Issue date Feb 22, 2005
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,673,663
- Issue date Jan 6, 2004
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded LDD implant process for sub-half-micron MOS devices
- Patent number 6,664,600
- Issue date Dec 16, 2003
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with double drain structure for suppressing short ch...
- Patent number 6,597,038
- Issue date Jul 22, 2003
- NEC Corporation
- Shingo Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly donor doped electrodes for high-dielectric-constant materials
- Patent number 6,593,638
- Issue date Jul 15, 2003
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded LDD implant process for sub-half-micron MOS devices
- Patent number 6,495,885
- Issue date Dec 17, 2002
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seismic imaging using omni-azimuth seismic energy sources and direc...
- Patent number 6,482,691
- Issue date Nov 19, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductive device with an enhanced ju...
- Patent number 6,479,356
- Issue date Nov 12, 2002
- Mitsubishi Denki Kabushi Kaisha
- Takeru Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming field effect transistors and related field effect...
- Patent number 6,475,852
- Issue date Nov 5, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,472,260
- Issue date Oct 29, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-enhanced bipolar transistor
- Patent number 6,459,140
- Issue date Oct 1, 2002
- Telefonaktiebolaget LM Ericsson
- Ted Johansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded LDD implant process for sub-half-micron MOS devices
- Patent number 6,448,141
- Issue date Sep 10, 2002
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors
- Patent number 6,413,823
- Issue date Jul 2, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,406,957
- Issue date Jun 18, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,400,002
- Issue date Jun 4, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,344,382
- Issue date Feb 5, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,335,234
- Issue date Jan 1, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,335,246
- Issue date Jan 1, 2002
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly donor doped electrodes for high-dielectric-constant materials
- Patent number 6,319,542
- Issue date Nov 20, 2001
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly donor doped electrodes for high-dielectric-constant materials
- Patent number 6,204,069
- Issue date Mar 20, 2001
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded LDD implant process for sub-half-micron MOS devices
- Patent number 6,159,813
- Issue date Dec 12, 2000
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor device comprising graded junctions with reduced...
- Patent number 6,107,149
- Issue date Aug 22, 2000
- Advanced Micro Devices, Inc.
- David Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising MIS transistor with high concentrat...
- Patent number 6,081,007
- Issue date Jun 27, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Takeru Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded LDD implant process for sub-half-micron MOS devices
- Patent number 6,046,472
- Issue date Apr 4, 2000
- Micron Technology, Inc.
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors and related field effec...
- Patent number 6,025,232
- Issue date Feb 15, 2000
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device and a semiconductor device
- Patent number 5,969,398
- Issue date Oct 19, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Murakami
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device including a high-breakdown voltage MOS transistor
- Publication number 20060027880
- Publication date Feb 9, 2006
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low capacitance ESD-protection structure under a bond pad
- Publication number 20050189593
- Publication date Sep 1, 2005
- MICROCHIP TECHNOLOGY INCORPORATED
- Randy L. Yach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040173855
- Publication date Sep 9, 2004
- NEC Electronics Corporation
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040159859
- Publication date Aug 19, 2004
- RENESAS TECHNOLOGY CORP.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graded LDD implant process for sub-half-micron MOS devices
- Publication number 20020190315
- Publication date Dec 19, 2002
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graded LDD implant process for sub-half-micron MOS devices
- Publication number 20020182813
- Publication date Dec 5, 2002
- Aftab Ahmad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming field effect transistors and related field effec...
- Publication number 20020137294
- Publication date Sep 26, 2002
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming field effect transistors and related field effec...
- Publication number 20020039817
- Publication date Apr 4, 2002
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming field effect transistors and related field effect...
- Publication number 20020037613
- Publication date Mar 28, 2002
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FIELD EFFECT TRANSISTORS
- Publication number 20020027243
- Publication date Mar 7, 2002
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming field effect transistors and related field effec...
- Publication number 20020025620
- Publication date Feb 28, 2002
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming field effect transistors and related field effec...
- Publication number 20010049173
- Publication date Dec 6, 2001
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS

Plural dopants of same conductivity type in same region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including a high-breakdown voltage MOS transistor

Semiconductor device and method of manufacturing the same

Semiconductor device including a high-breakdown voltage MOS transistor

Low capacitance ESD-protection structure under a bond pad

Graded LDD implant process for sub-half-micron MOS devices

Methods of forming field effect transistors and related field effec...

Graded LDD implant process for sub-half-micron MOS devices

MOS transistor with double drain structure for suppressing short ch...

Lightly donor doped electrodes for high-dielectric-constant materials

Graded LDD implant process for sub-half-micron MOS devices

Seismic imaging using omni-azimuth seismic energy sources and direc...

Method of manufacturing a semiconductive device with an enhanced ju...

Method of forming field effect transistors and related field effect...

Methods of forming field effect transistors and related field effec...

Indium-enhanced bipolar transistor

Graded LDD implant process for sub-half-micron MOS devices

Methods of forming field effect transistors

Methods of forming field effect transistors and related field effec...

Methods of forming field effect transistors and related field effec...

Methods of forming field effect transistors and related field effec...

Methods of forming field effect transistors and related field effec...

Methods of forming field effect transistors and related field effec...

Lightly donor doped electrodes for high-dielectric-constant materials

Lightly donor doped electrodes for high-dielectric-constant materials

Graded LDD implant process for sub-half-micron MOS devices

CMOS semiconductor device comprising graded junctions with reduced...

Semiconductor device comprising MIS transistor with high concentrat...

Graded LDD implant process for sub-half-micron MOS devices

Methods of forming field effect transistors and related field effec...

Method for producing a semiconductor device and a semiconductor device

Patents Applicationslast 30 patents

Semiconductor device including a high-breakdown voltage MOS transistor

Low capacitance ESD-protection structure under a bond pad

Semiconductor device and method of manufacturing the same

Semiconductor device

Graded LDD implant process for sub-half-micron MOS devices

Graded LDD implant process for sub-half-micron MOS devices

Methods of forming field effect transistors and related field effec...

Methods of forming field effect transistors and related field effec...

Method of forming field effect transistors and related field effect...

METHODS OF FORMING FIELD EFFECT TRANSISTORS

Methods of forming field effect transistors and related field effec...

Methods of forming field effect transistors and related field effec...