Lithographic apparatus and device manufacturing method

Information

  • Patent Grant
  • 10739684
  • Patent Number
    10,739,684
  • Date Filed
    Thursday, June 27, 2019
    4 years ago
  • Date Issued
    Tuesday, August 11, 2020
    3 years ago
Abstract
In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.
Description
FIELD

The present description relates to a lithographic apparatus and a method for manufacturing a device.


BACKGROUND

A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.


It has been proposed to immerse the substrate in the lithographic projection apparatus in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. The point of this is to enable imaging of smaller features since the exposure radiation will have a shorter wavelength in the liquid. The effect of the liquid may also be regarded as increasing the effective numerical aperture (NA) of the system and also increasing the depth of focus. Other immersion liquids have been proposed, including water with solid particles (e.g. quartz) suspended therein.


However, submersing the substrate or substrate and substrate table in a bath of liquid (see for example U.S. Pat. No. 4,509,852, hereby incorporated in its entirety by reference) means that there is a large body of liquid that must be accelerated during a scanning exposure. This requires additional or more powerful motors and turbulence in the liquid may lead to undesirable and unpredictable effects.


One of the solutions proposed is for a liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid supply system (the substrate generally has a larger surface area than the final element of the projection system). One way which has been proposed to arrange for this is disclosed in PCT patent application WO 99/49504, hereby incorporated in its entirety by reference. As illustrated in FIGS. 2 and 3, liquid is supplied by at least one inlet IN onto the substrate, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system. That is, as the substrate is scanned beneath the element in a −X direction, liquid is supplied at the +X side of the element and taken up at the −X side. FIG. 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source. In the illustration of FIG. 2 the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case. Various orientations and numbers of in- and out-lets positioned around the final element are possible, one example is illustrated in FIG. 3 in which four sets of an inlet with an outlet on either side are provided in a regular pattern around the final element.


After exposure of a substrate using an immersion apparatus, there is a chance that immersion liquid, e.g. water, will remain on the substrate and/or the substrate table. Such residual liquid can cause various problems—liquid on the substrate may cause errors in subsequent processing of the substrate, e.g. due to temperature nonuniformities in the post exposure bake, while liquid on the substrate table, especially on sensors and fiducial marks, may cause errors in subsequent measurements—and so is undesirable.


SUMMARY

Accordingly, it may be advantageous, for example, to prevent or reduce the occurrence of residual liquid on the substrate and/or substrate table after exposure of a substrate in an immersion type lithographic apparatus.


According to an aspect of the invention, there is provided a lithographic projection apparatus comprising a substrate table configured to hold a substrate; a projection system arranged to project a patterned beam of radiation onto the substrate; a liquid supply system configured to supply liquid to a space between the projection system and the substrate; and a residual liquid detector configured to detect liquid remaining on the substrate and/or the substrate table after an exposure is completed.


In an embodiment of the invention, the apparatus further comprises a drying station configured to dry the substrate, the substrate table or both in the event that liquid is detected by the residual liquid detector.


In an embodiment of the invention, the residual liquid detector comprises a level sensor configured to measure the position of a surface in a direction substantially parallel to an optical axis of the projection system, a tilt of a surface about axes substantially perpendicular to the optical axis of the projection system, or both.


In an embodiment of the invention, the residual liquid detector comprises an alignment sensor configured to measure the position of a marker in a direction substantially perpendicular to an optical axis of the projection system.


In the foregoing two embodiments, detection of liquid on the substrate, substrate table, or both may be effected by the level and/or alignment sensor giving a measurement outside a normal operating range.


In a further embodiment, the residual liquid detector comprises one or more devices selected from the group comprising an air gauge, a capacitive sensor, an automatically focusing spot projector, a scatterometer, a camera, an infrared sensor, and a grazing angle laser beam and a detector to detect scattered light.


In yet a further embodiment of the invention, the residual liquid detector comprises a monitoring circuit configured to monitor a force applied by an actuator to maintain the substrate table at a constant vertical position.


A further aspect of the invention provides a device manufacturing method comprising projecting, using a projection system of a lithographic apparatus, a patterned beam of radiation through a liquid onto a substrate, the substrate being held by a substrate table, and, after the projecting is complete, detecting residual liquid on the substrate and/or the substrate table.





BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:



FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention;



FIGS. 2 and 3 depict a liquid supply system for a lithographic projection apparatus;



FIG. 4 depicts another liquid supply system for a lithographic projection apparatus;



FIG. 5 depicts a liquid supply system according to an embodiment of the invention; and



FIGS. 6 to 8 depict measurement devices and sensors at a measurement station in different embodiments of the invention.





DETAILED DESCRIPTION


FIG. 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus comprises:

    • an illumination system (illuminator) IL configured to condition a radiation beam PB (e.g. UV radiation or DUV radiation).
    • a support structure (e.g. a mask table) MT constructed to support a patterning device (e.g. a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters;
    • a substrate table (e.g. a wafer table) WT constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and
    • a projection system (e.g. a refractive projection lens system) PL configured to project a pattern imparted to the radiation beam PB by patterning device MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.


The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.


The support structure supports, i.e. bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”


The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.


The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.


The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.


As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).


The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.


Referring to FIG. 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.


The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.


The radiation beam PB is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam PB passes through the projection system PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam PB. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in FIG. 1) can be used to accurately position the mask MA with respect to the path of the radiation beam PB, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.


The depicted apparatus could be used in at least one of the following modes:


1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.


2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.


3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.


Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.


Another liquid supply system which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table. The seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis). A seal is formed between the seal member and the surface of the substrate. In an embodiment, the seal is a contactless seal such as a gas seal. Such a system with a gas seal is disclosed in U.S. patent application Ser. No. 10/705,783, hereby incorporated in its entirety by reference.



FIG. 5 depicts a liquid supply system comprising a liquid reservoir 10 between the projection system and the substrate stage. The liquid reservoir 10 is filled with a liquid 11 having a relatively high refractive index, e.g. water, provided via inlet/outlet ducts 13. The liquid has the effect that the radiation of the projection beam has a shorter wavelength in the liquid than in air or a vacuum, allowing smaller features to be resolved. It is well known that the resolution limit of a projection system is determined, inter alia, by the wavelength of the projection beam and the numerical aperture of the system. The presence of the liquid may also be regarded as increasing the effective numerical aperture. Furthermore, at fixed numerical aperture, the liquid is effective to increase the depth of field.


The reservoir 10 forms a contactless seal to the substrate around the image field of the projection system so that liquid is confined to fill a space between the substrate surface and the final element of the projection system. The reservoir is formed by a seal member 12 positioned below and surrounding the final element of the projection system PL. Liquid is brought into the space below the projection system and within the seal member 12. The seal member 12 extends a little above the final element of the projection system and the liquid level rises above the final element so that a buffer of liquid is provided. The seal member 12 has an inner periphery that at the upper end preferably closely conforms to the step of the projection system or the final element thereof and may, e.g., be round. At the bottom, the inner periphery closely conforms to the shape of the image field, e.g., rectangular though this need not be the case.


The liquid is confined in the reservoir by a gas seal 16 between the bottom of the seal member 12 and the surface of the substrate W. The gas seal is formed by gas, e.g. air or synthetic air but preferably N2 or another inert gas, provided under pressure via inlet 15 to the gap between seal member 12 and substrate and extracted via first outlet 14. The overpressure on the gas inlet 15, vacuum level on the first outlet 14 and geometry of the gap are arranged so that there is a high-velocity gas flow inwards that confines the liquid. Alternatively, a liquid seal, in which a liquid flow is set up to confine the liquid in the reservoir, may be used.


In an implementation, the gas seal is formed by two annular grooves which are connected to the first inlet 15 and first outlet 14 respectively by a series of small conducts spaced around the grooves. The in- and out-lets 14, 15 may either be a plurality of discrete orifices around the circumference of the seal member 12 or may be continuous grooves or slits. A large annular hollow in the seal member may be provided in each of the inlet and outlet to form a manifold. The gas seal may also be effective to support the seal member 12 by behaving as a gas bearing. A liquid seal may also act as a dynamic or static bearing.


At a measurement station in the lithographic apparatus, various sensors and measurement devices are provided for use in preparing a substrate for exposure and/or qualifying an exposed resist. Some of these are shown in FIG. 6. A substrate W is loaded onto a substrate table WT at the measurement station (or at a further load/unload station) and any necessary pre-exposure measurements are taken, for example a level sensor 30 is used to generate a height map of the entire substrate for later use in leveling the substrate during exposure and an alignment sensor 20 is used to measure the positions of alignment markers on the substrate W relative to a reference marker incorporated in a transmission image sensor TIS mounted on the substrate table WT. The substrate table WT and substrate W are then moved to an exposure station for exposure(s) to be completed and then returned to the measurement station for any necessary post-exposure measurements. To improve throughput, the apparatus may have a second substrate table so that exposures can be carried out on one substrate while another is being measured. If the apparatus has only one substrate table, the measurement devices and sensors can be provided at the exposure station and some measurements, e.g. leveling, may be performed concurrently with exposure.


In an embodiment of the invention, a post-exposure qualification process comprises detection of any residual liquid left on the substrate and/or substrate table after exposure has been completed. The liquid supply system is arranged as far as possible to remove all liquid that is used for the exposure but it is possible that some liquid will be left behind. Liquid on the substrate can cause difficulties in subsequent substrate processing, e.g. by causing temperature variations in a post-exposure bake process. The vapor arising from any residual liquid may also corrode the bake plates used for the post-exposure bake. Any residual liquid on the substrate table may also cause corrosion or may interfere with the operation of sensors such as the alignment sensor when attempting to determine the position of the reference marker. Residual liquid that might migrate over the sides of the substrate table onto the mirrors for the interferometric position measuring system may cause errors in the output of that system. Residual liquid is shown in FIG. 6 as droplets d but may also take the form of a thin film.


One method of detecting residual liquid on the substrate and/or substrate table is to perform a height mapping process with the level sensor 30. The presence of residual liquid may be indicated by height and/or tilt measurements outside a normal operating range of the sensor or by significant variation from a reference height map or a height map performed before exposure. Residual liquid may also be detected by performing alignment measurements with the alignment sensor 20. Again, measurements outside a normal operating range of the sensor or significant variation from measurements taken before exposure may be indicative of residual liquid.


In the event residual liquid is detected, an alarm signal may be generated to instruct an operator to take manual remedial action. Alternatively, an integral automated drying system 70 may be activated, or re-activated if a drying process has already been performed. If the residual liquid is detected on the substrate, the substrate may be unloaded to a track unit in the normal manner but accompanied by an error code or flag to instruct the track unit to perform an additional drying step, e.g. spin drying, before a post-exposure bake or other process sensitive to the presence of liquid.


In another embodiment, a dedicated liquid detector is used to detect the residual liquid. This may take the form of a capacitive sensor 40 and/or an air gauge 50 as shown in FIG. 7. Other possible types of sensor comprise scatterometers, cameras, e.g. CCD cameras, infrared sensors to detect spots that are cooler due to evaporation, and known sensors for detecting particles on substrates. An automatically focusing spot projector may also be used. Such a device is often found in a pickup for a CD or other optical disk drive and comprises a collimating lens mounted in a voice coil to focus a collimated beam onto a substrate. The reflected beam is directed to a detector, e.g. a quad cell photodetector, which detects whether the spot on the substrate is in focus, e.g. by detecting the elipticity of the reflected beam. A servo circuit then adjusts the position of the collimating lens to bring the spot on the substrate in focus. The presence of liquid on the substrate will change the optical path length between lens and substrate so that the lens will be moved to compensate. This movement can be detected, e.g. by monitoring the drive signal to the voice coil, to indicate the presence of liquid. Such a device may be advantageous in that the beam spot projected on the substrate can be very small, e.g. diffraction limited, and hence very small liquid droplets may be detected. Referring to FIG. 8, another possible type of sensor comprises a laser emitter 60 and a photodetector 61 to detect light scattered by the residual liquid.


The substrate table may be scanned past the detector or the detector may be provided on a robot arm to scan the substrate and/or substrate table. In the case of an emitter/detector sensor, the emitted beam may be arranged to scan across the substrate, e.g. using a rotating polygon mirror. Multiple detectors may be provided to reduce the time taken for the detection of residual liquid or for use over different parts of the substrate and substrate table surface.


It should be appreciated that the sensor or sensors for detecting residual liquid may be provided at the exposure station, especially if the apparatus is a single stage apparatus, and may operate in parallel with exposure(s) (i.e., detecting liquid at previously exposed target portions) or after all exposures have been completed. If sufficiently compact, the sensor or sensors may be mounted on the liquid supply system.


In a further embodiment, the detection of residual liquid is effected by detecting the additional weight of the residual liquid on the substrate table. This can be done by a circuit or software routine that monitors the force applied to the substrate table by a Z-actuator or gravity compensator in order to maintain it at a constant vertical position.


In an embodiment, there is provided a lithographic projection apparatus comprising: a substrate table configured to hold a substrate; a projection system arranged to project a patterned beam of radiation onto the substrate; a liquid supply system configured to supply liquid to a space between the projection system and the substrate; and a residual liquid detector configured to detect liquid remaining on the substrate and/or the substrate table after an exposure is completed.


In an embodiment, the apparatus further comprises a drying station configured to dry the substrate, the substrate table, or both in the event that liquid is detected by the residual liquid detector. In an embodiment, the residual liquid detector comprises a level sensor configured to measure the position of a surface in a direction substantially parallel to an optical axis of the projection system, a tilt of a surface about axes substantially perpendicular to the optical axis of the projection system, or both. In an embodiment, detection of liquid on the substrate, substrate table, or both is effected by the level sensor giving a measurement outside a normal operating range. In an embodiment, the residual liquid detector comprises an alignment sensor configured to measure the position of a marker in a direction substantially perpendicular to an optical axis of the projection system. In an embodiment, detection of liquid on the substrate, substrate table, or both is effected by the alignment sensor giving a measurement outside a normal operating range. In an embodiment, the residual liquid detector comprises one or more devices selected from the group comprising an air gauge, a capacitive sensor, an automatically focusing spot projector, a scatterometer, a camera, an infrared sensor, and a grazing angle laser beam and a detector to detect scattered light. In an embodiment, the residual liquid detector comprises a monitoring circuit configured to monitor a force applied by an actuator to maintain the substrate table at a constant vertical position. In an embodiment, the projection system is provided at an exposure station and the residual liquid detector is provided at a measurement station, the measurement station being physically separate from the exposure station. In an embodiment, the residual liquid detector is configured to generate, upon detection of residual liquid, an alarm or error signal to instruct performance of a drying action.


In an embodiment, there is provided a device manufacturing method comprising projecting, using a projection system of a lithographic apparatus, a patterned beam of radiation through a liquid onto a substrate, the substrate being held by a substrate table, and, after the projecting is complete, detecting residual liquid on the substrate and/or the substrate table.


In an embodiment, the method further comprises drying the substrate, the substrate table, or both in the event that residual liquid is detected. In an embodiment, detecting residual liquid comprises measuring the position of a surface in a direction substantially parallel to an optical axis of the projection system, a tilt of a surface about axes substantially perpendicular to the optical axis of the projection system, or both. In an embodiment, detecting of residual liquid on the substrate, substrate table, or both is effected by the measuring of the position, tilt, or both giving a measurement outside a normal operating range. In an embodiment, detecting residual liquid comprises measuring the position of a marker in a direction substantially perpendicular to an optical axis of the projection system. In an embodiment, detecting of residual liquid on the substrate, substrate table, or both is effected by the measuring of the position giving a measurement outside a normal operating range. In an embodiment, detecting residual liquid is performed by one or more devices selected from the group comprising an air gauge, a capacitive sensor, an automatically focusing spot projector, a scatterometer, a camera, an infrared sensor, and a grazing angle laser beam and a detector to detect scattered light. In an embodiment, detecting residual liquid comprises monitoring a force applied by an actuator to maintain the substrate table at a constant vertical position. In an embodiment, projecting the patterned beam of radiation is performed at an exposure station and detecting residual liquid is performed at a measurement station, the measurement station being physically separate from the exposure station. In an embodiment, detecting residual liquid is performed in parallel with projecting the patterned beam.


A further immersion lithography solution with a localized liquid supply system is shown in FIG. 4. Liquid is supplied by two groove inlets IN on either side of the projection system PL and is removed by a plurality of discrete outlets OUT arranged radially outwardly of the inlets IN. The inlets IN and OUT can be arranged in a plate with a hole in its center and through which the projection beam is projected. Liquid is supplied by one groove inlet IN on one side of the projection system PL and removed by a plurality of discrete outlets OUT on the other side of the projection system PL, causing a flow of a thin film of liquid between the projection system PL and the substrate W. The choice of which combination of inlet IN and outlets OUT to use can depend on the direction of movement of the substrate W (the other combination of inlet IN and outlets OUT being inactive).


In European Patent Application No. 03257072.3, the idea of a twin or dual stage immersion lithography apparatus is disclosed. Such an apparatus is provided with two tables for supporting a substrate. Leveling measurements are carried out with a table at a first position, without immersion liquid, and exposure is carried out with a table at a second position, where immersion liquid is present. Alternatively, the apparatus has only one table.


The present invention may be applied to any immersion lithography apparatus, in particular, but not exclusively, those types mentioned above.


Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.


Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.


The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.


The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.


While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, an embodiment of the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.


The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

Claims
  • 1. An alignment sensor apparatus for a lithographic projection tool that comprises a projection system arranged to project a beam of radiation onto a substrate and a liquid supply system configured to supply liquid to a space between the projection system and a movable table, the alignment sensor apparatus comprising: an optical system configured to provide radiation on an object;a detector configured to detect at least some of the radiation redirected by the object; anda non-transitory medium having computer-readable instructions, the instructions configured, to cause a computer processor system, to process a signal from the detector to detect at least part of liquid remaining on the object to produce a first output representing a first parameter about the liquid and to process a signal from the detector to produce a second output separate from the first output, the second output representing a second parameter relating to alignment and that is separate from the first parameter about the liquid.
  • 2. The apparatus according to claim 1, wherein the second parameter comprises a spatial position, in a direction substantially perpendicular to an optical axis of the projection system, of a marker.
  • 3. The apparatus according to claim 1, wherein the instructions are further configured to cause the computer processor system to detect the at least part of the liquid on the object by the alignment sensor apparatus giving a measurement outside a normal operating range.
  • 4. The apparatus according to claim 3, wherein the instructions are further configured to cause the computer processor system to detect the at least part of the liquid on the object by the alignment sensor apparatus giving an alignment measurement outside a normal operating range.
  • 5. The apparatus according to claim 1, wherein the instructions are further configured to cause the computer processor system to generate, upon detection of the at least part of the liquid on the object, a signal to instruct performance of a drying action.
  • 6. The apparatus according to claim 1, further comprising a drying system configured to remove liquid from the object.
  • 7. The apparatus according to claim 1, wherein the instructions are further configured to cause the computer processor system to generate, upon detection of the at least part of the liquid on the object, a signal to instruct removal of the object from the lithographic apparatus.
  • 8. A level sensor apparatus for a lithographic projection tool that comprises a liquid supply system configured to supply liquid to a space between a projection system of the lithographic projection tool and a movable table of the lithographic projection tool, the level sensor apparatus comprising: an optical system configured to provide a radiation beam on an object;a detector configured to detect at least some of the radiation beam redirected by the object;a non-transitory medium having computer-readable instructions, the instructions configured, to cause a computer processor system, to process a signal from the detector to detect at least part of liquid remaining on the object to produce a first output representing a first parameter about the liquid and to make a measurement to produce a second output separate from the first output, the second output representing a second parameter relating to a height of an object and that is separate from the first parameter about the liquid.
  • 9. The apparatus according to claim 8, wherein the second parameter comprises a spatial position, in a direction substantially parallel to an optical axis of the projection system, of the object.
  • 10. The apparatus according to claim 8, wherein the instructions are further configured to cause the computer processor system to detect the at least part of the liquid on the object by the level sensor apparatus giving a measurement outside a normal operating range.
  • 11. The apparatus according to claim 10, wherein the instructions are further configured to cause the computer processor system to detect the at least part of the liquid on the object by the level sensor apparatus giving a height and/or tilt measurement outside a normal operating range.
  • 12. The apparatus according to claim 8, wherein the instructions are further configured to cause the computer processor system to generate, upon detection of the at least part of the liquid on the object, a signal to instruct performance of a drying action.
  • 13. The apparatus according to claim 8, further comprising a drying system configured to remove liquid from the object.
  • 14. A sensor system for a lithographic projection tool that comprises a liquid supply system configured to supply liquid to a space between a projection system of the lithographic projection tool and a movable table of the lithographic projection tool, the sensor system comprising: a same detector configured to configured to determine a position and/or orientation of an object and configured to detect at least part of the liquid on a surface; anda non-transitory medium having computer-readable instructions, the instructions configured, to cause a processor system, to process a signal from the detector to produce a first output to yield a first parameter representing the position and/or orientation of the object and to produce a second output separate from the first output, the second output arranged to yield a second parameter, separate from the first parameter, representing detection of the at least part of the liquid on the surface.
  • 15. The system according to claim 14, wherein the second parameter comprises a spatial position, in a direction substantially parallel to an optical axis of the projection system, of the object.
  • 16. The system according to claim 14, wherein the second parameter comprises a spatial position, in a direction substantially perpendicular to an optical axis of the projection system, of the object.
  • 17. The system according to claim 14, wherein the instructions are further configured to cause the computer processor system to detect the at least part of the liquid on the object by the sensor system giving a measurement outside a normal operating range.
  • 18. The system according to claim 17, wherein the instructions are further configured to cause the computer processor system to detect the at least part of the liquid on the object by the sensor system giving a position and/or orientation measurement outside a normal operating range.
  • 19. The system according to claim 14, wherein the instructions are further configured to cause the computer processor system to generate, upon detection of the at least part of the liquid on the object, a signal to instruct performance of a drying action.
  • 20. The system according to claim 14, further comprising a drying system configured to remove liquid from the object.
Parent Case Info

The present application is a continuation of co-pending U.S. patent application Ser. No. 14/800,493, filed on Jul. 15, 2015, now allowed, which is a continuation of U.S. patent application Ser. No. 13/685,410, filed on Nov. 26, 2012, now U.S. Pat. No. 9,104,117, which is a continuation of U.S. patent application Ser. No. 12/289,591, filed on Oct. 30, 2008, now U.S. Pat. No. 8,319,939, which is a continuation of U.S. patent application Ser. No. 10/885,489, filed on Jul. 7, 2004, now U.S. Pat. No. 7,463,330, the entire contents of each of the foregoing applications is herein fully incorporated by reference.

US Referenced Citations (158)
Number Name Date Kind
3573975 Dhaka et al. Apr 1971 A
3648587 Stevens Mar 1972 A
4346164 Tabarelli et al. Aug 1982 A
4390273 Loebach et al. Jun 1983 A
4396705 Akeyama et al. Aug 1983 A
4480910 Takanashi et al. Nov 1984 A
4509852 Tabarelli et al. Apr 1985 A
5040020 Rauschenbach et al. Aug 1991 A
5528118 Lee Jun 1996 A
5610683 Takahashi Mar 1997 A
5623853 Novak et al. Apr 1997 A
5715039 Fukuda et al. Feb 1998 A
5825043 Suwa Oct 1998 A
5874820 Lee Feb 1999 A
5900354 Batchelder May 1999 A
5969441 Loopstra et al. Oct 1999 A
5986742 Straaijer Nov 1999 A
6012966 Ban Jan 2000 A
6191429 Suwa Feb 2001 B1
6208407 Loopstra Mar 2001 B1
6236634 Lee et al. May 2001 B1
6341007 Nishi et al. Jan 2002 B1
6400441 Nishi et al. Jun 2002 B1
6417914 Li Jul 2002 B1
6549269 Nishi et al. Apr 2003 B1
6560032 Hatano May 2003 B2
6590634 Nishi et al. Jul 2003 B1
6600547 Watson et al. Jul 2003 B2
6603130 Bisschops et al. Aug 2003 B1
6633365 Suenaga Oct 2003 B2
6954256 Flagello et al. Oct 2005 B2
7070915 Ho Jul 2006 B2
7394521 Van Santen et al. Jul 2008 B2
7463330 Streefkerk Dec 2008 B2
7990517 Takaiwa Aug 2011 B2
7995186 Ohta Aug 2011 B2
9104117 Streefkerk Aug 2015 B2
10338478 Streefkerk Jul 2019 B2
20020020821 Van Santen et al. Feb 2002 A1
20020163629 Switkes et al. Nov 2002 A1
20030030916 Suenaga Feb 2003 A1
20030123040 Almogy Jul 2003 A1
20030174408 Rostalski et al. Sep 2003 A1
20040000627 Schuster Jan 2004 A1
20040020782 Cohen et al. Feb 2004 A1
20040021844 Suenaga Feb 2004 A1
20040075895 Lin Apr 2004 A1
20040103950 Iriguchi Jun 2004 A1
20040109237 Epple et al. Jun 2004 A1
20040114117 Bleeker Jun 2004 A1
20040118184 Violette Jun 2004 A1
20040119954 Kawashima et al. Jun 2004 A1
20040125351 Krautschik Jul 2004 A1
20040135099 Simon et al. Jul 2004 A1
20040136494 Lof et al. Jul 2004 A1
20040160582 De Smit et al. Aug 2004 A1
20040165159 Lof et al. Aug 2004 A1
20040169834 Richter et al. Sep 2004 A1
20040169924 Flagello et al. Sep 2004 A1
20040180294 Baba-Ali et al. Sep 2004 A1
20040180299 Rolland et al. Sep 2004 A1
20040207824 Lof et al. Oct 2004 A1
20040211920 Derksen et al. Oct 2004 A1
20040224265 Endo et al. Nov 2004 A1
20040224525 Endo et al. Nov 2004 A1
20040227923 Flagello et al. Nov 2004 A1
20040233405 Kato et al. Nov 2004 A1
20040253547 Endo et al. Dec 2004 A1
20040253548 Endo et al. Dec 2004 A1
20040257544 Vogel et al. Dec 2004 A1
20040259008 Endo et al. Dec 2004 A1
20040259040 Endo et al. Dec 2004 A1
20040263808 Sewell Dec 2004 A1
20040263809 Nakano Dec 2004 A1
20050002004 Kolesnychenko et al. Jan 2005 A1
20050007569 Streefkerk et al. Jan 2005 A1
20050007570 Streefkerk et al. Jan 2005 A1
20050018155 Cox et al. Jan 2005 A1
20050018156 Mulkens et al. Jan 2005 A1
20050024609 De Smit et al. Feb 2005 A1
20050030497 Nakamura Feb 2005 A1
20050030498 Mulkens Feb 2005 A1
20050030506 Schuster Feb 2005 A1
20050030511 Auer-Jongepier et al. Feb 2005 A1
20050036121 Hoogendam et al. Feb 2005 A1
20050036183 Yeo et al. Feb 2005 A1
20050036184 Yeo et al. Feb 2005 A1
20050036213 Mann et al. Feb 2005 A1
20050037269 Levinson Feb 2005 A1
20050041225 Sengers et al. Feb 2005 A1
20050042554 Dierichs et al. Feb 2005 A1
20050046813 Streefkerk et al. Mar 2005 A1
20050046934 Ho Mar 2005 A1
20050048220 Mertens et al. Mar 2005 A1
20050048223 Pawloski et al. Mar 2005 A1
20050052632 Miyajima Mar 2005 A1
20050068639 Pierrat et al. Mar 2005 A1
20050073670 Carroll Apr 2005 A1
20050074704 Endo et al. Apr 2005 A1
20050078286 Dierichs et al. Apr 2005 A1
20050078287 Sengers et al. Apr 2005 A1
20050084794 Meagley et al. Apr 2005 A1
20050088635 Hoogendam et al. Apr 2005 A1
20050094114 Loopstra et al. May 2005 A1
20050094119 Loopstra et al. May 2005 A1
20050100745 Lin et al. May 2005 A1
20050110973 Streefkerk et al. May 2005 A1
20050117224 Shafer et al. Jun 2005 A1
20050122497 Lyons et al. Jun 2005 A1
20050132914 Mulkens Jun 2005 A1
20050134817 Nakamura Jun 2005 A1
20050141098 Schuster Jun 2005 A1
20050145265 Ravkin et al. Jul 2005 A1
20050145803 Hakey et al. Jul 2005 A1
20050146694 Tokita Jul 2005 A1
20050146695 Kawakami Jul 2005 A1
20050147920 Lin et al. Jul 2005 A1
20050153424 Coon Jul 2005 A1
20050158673 Hakey et al. Jul 2005 A1
20050164502 Deng et al. Jul 2005 A1
20050174549 Duineveld et al. Aug 2005 A1
20050175940 Dierichs Aug 2005 A1
20050185269 Epple et al. Aug 2005 A1
20050190435 Shafer et al. Sep 2005 A1
20050190455 Rostalski et al. Sep 2005 A1
20050205108 Chang et al. Sep 2005 A1
20050213061 Hakey et al. Sep 2005 A1
20050213072 Schenker et al. Sep 2005 A1
20050217135 O'Donnell et al. Oct 2005 A1
20050217137 Smith et al. Oct 2005 A1
20050217703 O'Donnell Oct 2005 A1
20050219481 Cox et al. Oct 2005 A1
20050219482 Baselmans et al. Oct 2005 A1
20050219499 Maria Zaal et al. Oct 2005 A1
20050225735 Magome et al. Oct 2005 A1
20050225737 Weissenrieder et al. Oct 2005 A1
20050231694 Kolesnychenko et al. Oct 2005 A1
20050233081 Tokita Oct 2005 A1
20050237501 Furukawa et al. Oct 2005 A1
20050243292 Baselmans et al. Nov 2005 A1
20050245005 Benson Nov 2005 A1
20050253090 Gau et al. Nov 2005 A1
20050259232 Streefkerk et al. Nov 2005 A1
20050259233 Streefkerk et al. Nov 2005 A1
20050259236 Straaijer Nov 2005 A1
20050264774 Mizutani Dec 2005 A1
20050264778 Lof et al. Dec 2005 A1
20050270505 Smith Dec 2005 A1
20060007419 Streefkerk Jan 2006 A1
20060077367 Kobayashi et al. Apr 2006 A1
20060119813 Hultermans et al. Jun 2006 A1
20060132737 Magome et al. Jun 2006 A1
20060257553 Ohta et al. Nov 2006 A1
20070159609 Hiroaki et al. Jul 2007 A1
20070258068 Horikawa Nov 2007 A1
20110261330 Ohta et al. Oct 2011 A1
20110261331 Takaiwa et al. Oct 2011 A1
20110261345 Takaiwa et al. Oct 2011 A1
Foreign Referenced Citations (132)
Number Date Country
206 607 Feb 1984 DE
221 563 Apr 1985 DE
224448 Jul 1985 DE
242880 Feb 1987 DE
0023231 Feb 1981 EP
0418427 Mar 1991 EP
1039511 Sep 2000 EP
2474708 Jul 1981 FR
57-117238 Jul 1982 JP
57-153433 Sep 1982 JP
58-202448 Nov 1983 JP
59-019912 Feb 1984 JP
62-065326 Mar 1987 JP
62-121417 Jun 1987 JP
63-157419 Jun 1988 JP
63-73628 Sep 1989 JP
04-065603 Mar 1992 JP
04-305915 Oct 1992 JP
04-305917 Oct 1992 JP
05-062877 Mar 1993 JP
06-053120 Feb 1994 JP
06-124873 May 1994 JP
06-168866 Jun 1994 JP
06-188169 Jul 1994 JP
07-066114 Mar 1995 JP
07-132262 May 1995 JP
07-176468 Jul 1995 JP
07-220990 Aug 1995 JP
08-037149 Feb 1996 JP
08-166475 Jun 1996 JP
08-213310 Aug 1996 JP
08-316125 Nov 1996 JP
08-330224 Dec 1996 JP
63-073628 Apr 1998 JP
10-163099 Jun 1998 JP
10-214783 Aug 1998 JP
10-228661 Aug 1998 JP
10-255319 Sep 1998 JP
10-303114 Nov 1998 JP
10-340846 Dec 1998 JP
11-016816 Jan 1999 JP
11-135400 May 1999 JP
11-176727 Jul 1999 JP
2000-058436 Feb 2000 JP
2001-091849 Apr 2001 JP
2002-014005 Jan 2002 JP
2003-077828 Mar 2003 JP
2003-234265 Aug 2003 JP
2004-134461 Apr 2004 JP
2004-193252 Jul 2004 JP
2004-207696 Jul 2004 JP
2005005713 Jan 2005 JP
2005-012195 Jan 2005 JP
2005-057278 Mar 2005 JP
2005-259789 Sep 2005 JP
9828665 Jul 1998 WO
WO 9949504 Sep 1999 WO
02091078 Nov 2002 WO
WO 03077036 Sep 2003 WO
WO 03077037 Sep 2003 WO
WO 2004019128 Mar 2004 WO
2004050266 Jun 2004 WO
WO 2004053596 Jun 2004 WO
WO 2004053950 Jun 2004 WO
WO 2004053951 Jun 2004 WO
WO 2004053952 Jun 2004 WO
WO 2004053953 Jun 2004 WO
WO 2004053954 Jun 2004 WO
WO 2004053955 Jun 2004 WO
WO 2004053956 Jun 2004 WO
WO 2004053957 Jun 2004 WO
WO 2004053958 Jun 2004 WO
WO 2004053959 Jun 2004 WO
WO 2004055803 Jul 2004 WO
WO 2004057589 Jul 2004 WO
WO 2004057590 Jul 2004 WO
2004077154 Sep 2004 WO
2004081666 Sep 2004 WO
2004090577 Oct 2004 WO
2004090633 Oct 2004 WO
2004090634 Oct 2004 WO
2004092830 Oct 2004 WO
2004092833 Oct 2004 WO
2004093130 Oct 2004 WO
2004093159 Oct 2004 WO
2004093160 Oct 2004 WO
2004095135 Nov 2004 WO
2004105106 Dec 2004 WO
2004105107 Dec 2004 WO
2005001432 Jan 2005 WO
2005001572 Jan 2005 WO
2005003864 Jan 2005 WO
2005006026 Jan 2005 WO
2005008339 Jan 2005 WO
2005010962 Feb 2005 WO
2005013008 Feb 2005 WO
2005015283 Feb 2005 WO
2005017625 Feb 2005 WO
2005019935 Mar 2005 WO
2005022266 Mar 2005 WO
2005024325 Mar 2005 WO
2005024517 Mar 2005 WO
2005034174 Apr 2005 WO
2005036621 Apr 2005 WO
2005050324 Jun 2005 WO
2005054953 Jun 2005 WO
2005054955 Jun 2005 WO
2005059617 Jun 2005 WO
2005059618 Jun 2005 WO
2005059645 Jun 2005 WO
2005059654 Jun 2005 WO
2005062128 Jul 2005 WO
2005064400 Jul 2005 WO
2005064405 Jul 2005 WO
2005069055 Jul 2005 WO
2005069078 Jul 2005 WO
2005069081 Jul 2005 WO
2005071491 Aug 2005 WO
2005074606 Aug 2005 WO
2005076084 Aug 2005 WO
2005076321 Aug 2005 WO
2005081030 Sep 2005 WO
2005081067 Sep 2005 WO
2005081293 Sep 2005 WO
2005098504 Oct 2005 WO
2005098505 Oct 2005 WO
2005098506 Oct 2005 WO
2005106589 Nov 2005 WO
2005111689 Nov 2005 WO
2005111722 Nov 2005 WO
2005119368 Dec 2005 WO
2005119369 Dec 2005 WO
Non-Patent Literature Citations (36)
Entry
M. Switkes et al., “Immersion Lithography at 157 nm”, MIT Lincoln Lab, Orlando Jan. 2001, Dec. 17, 2001.
M. Switkes et al., “Immersion Lithography at 157 nm”, J. Vac. Sci. Technol. B., vol. 19, No. 6, Nov./Dec. 2001, pp. 2353-2356.
M. Switkes et al., “Immersion Lithography: Optics for the 50 nm Node”, 157 Anvers-1, Sep. 4, 2002.
B.J. Lin, “Drivers, Prospects and Challenges for Immersion Lithography”, TSMC, Inc., Sep. 2002.
B.J. Lin, “Proximity Printing Through Liquid”, IBM Technical Disclosure Bulletin, vol. 20, No. 11B, Apr. 1978, p. 4997.
B,J. Lin, “The Paths to Subhalf-Micrometer Optical Lithography”, SPIE vol. 922, Optical/Laser Microlithography (1988), pp. 256-269.
G.W.W. Stevens, “Reduction of Waste Resulting from Mask Defects”, Solid State Technology, Aug. 1978, vol. 21 008, pp. 68-72.
S. Owa et al., “Immersion Lithography; its potential performance and issues”, SPIE Microlithography 2003, 5040-186, Feb. 27, 2003.
S. Owa et al., “Advantage and Feasibility of Immersion Lithography”, Proc. SPIE 5040 (2003).
Nikon Precision Europe GmbH, “Investor Relations—Nikon's Real Solutions”, May 15, 2003.
H. Kawata et al., “Optical Projection Lithography using Lenses with Numerical Apertures Greater than Unity”, Microelectronic Engineering 9 (1989), pp. 31-36.
J.A. Hoffnagle et al., “Liquid Immersion Deep-Ultraviolet Interferometric Lithography”, J. Vac. Sci. Technol, B., vol. 17, No. 6, Nov./Dec. 1999, pp. 3306-3309.
B.W. Smith et al., “Immersion Optical Lithography at 193nm”, FUTURE FAB International, vol. 15, Jul. 11, 2003.
H. Kawata et al., “Fabrication of 0.2μm Fine Patterns Using Optical Projection Lithography with an Oil Immersion Lens”, Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4174-4177.
G. Owen et al., “1/8μm Optical Lithography”, J. Vac. Sci. Technol, B., vol. 10, No. 6, Nov./Dec. 1992, pp. 3032-3036.
H. Hogan, “New Semiconductor Lithography Makes a Splash”, Photonics Spectra, Photonics TechnologyWorld, Oct. 2003 Edition, pp. 1-3.
S. Owa and N. Nagasaka, “Potential Performance and Feasibility of Immersion Lithography”, NGL Workshop 2003, Jul. 10, 2003, Slide Nos. 1-33.
S. Owa et al., “Update on 193nm immersion exposure tool”, Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-51.
H. Hata, “The Development of Immersion Exposure Tools”, Litho Forum, International Sematech, Los Angeles, Jan. 27-29, 2004, Slide Nos. 1-22.
T. Matsuyama et al., “Nikon Projection Lens Update”, SPIE Microlithography 2004, 5377-65, Mar. 2004.
“Depth-of-Focus Enhancement Using High Refractive Index Layer on the Imaging Layer”, IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, p. 6521.
A. Suzuki, “Lithography Advances on Multiple Fronts”, EEdesign, EE Times, Jan. 5, 2004.
B. Lin, The k3 coefficient in nonparaxial λ/NA scaling equations for resolution, depth of focus, and immersion lithography, J. Microlith., Microfab., Microsyst. 1(1):7-12 (2002).
Information Disclosure Statement filed Jan. 10, 2007 issued for U.S. Appl. No. 11/651,551.
Information Disclosure Statement filed Jan. 11, 2007 issued for U.S. Appl. No. 11/652,015.
B.J. Lin, “Semiconductor Foundry, Lithography and Partners,” Proceedings of SPEI, vol. 4688, 2002, pp. 11-24.
M. Switkes, et al., “Resolution Enhancement of 157 nm Lithography by Liquid Immersion,” Proceedings of SPEI, vol. 4691, 2002, pp. 459-465.
M. Switkes, et al., “Resolution Enhancement of 157 nm Lithography by Liquid Immersion,” J. Microlith., Microfab, Microsyst., vol. 1, No. 3, Oct. 2002, pp. 225-228.
Soichi Owa et al., “Immersion lithography; its potential performance and issues,” Optical Microlithography XVI, Proceedings of SPIE, vol. 5040, 2003, pp. 724-733.
Office Action as issued for U.S. Appl. No. 13/067,842 dated Mar. 2, 2012.
English Translation of Japanese Official Action dated Oct. 2, 2008 in Japanese Application No. 2005-197421.
English translation of the Official Action dated Dec. 7, 2009 by the Japanese Patent Office in Japanese Patent Application No. 2009-000117 (3 pages).
Japanese Office Action dated Oct. 18, 2011 in corresponding Japanese Patent Application No. 2010-088441.
JP 2003-234265 Yamazaki translation.
“Level sensor,” Wikipedia, http://en.wikipedia.org/wiki/Level_senor (2013).
Office Action as issued for U.S. Appl. No. 13/067,867 dated Feb. 28, 2012.
Related Publications (1)
Number Date Country
20190317411 A1 Oct 2019 US
Continuations (4)
Number Date Country
Parent 14800493 Jul 2015 US
Child 16454126 US
Parent 13685410 Nov 2012 US
Child 14800493 US
Parent 12289591 Oct 2008 US
Child 13685410 US
Parent 10885489 Jul 2004 US
Child 12289591 US